Metal-semiconductor Interface Research Articles

P-type Schottky-barrier-free contact to MoS2 via layer-number-assisted interface engineering

Bilayer and few-layer MoS2 show intrinsically higher electronic quality and substantially improved device performance than monolayer, and high-quality MoS2 wafers with controlled layer number have been grown. In addition, MoS2 has different polymorphs such as the semiconducting H phase and semimetallic distorted T (dT) phase, and vertically stacked dT-/H-MoS2 metal-semiconductor junctions (MSJs) have been synthesized. However, the contact mechanism of dT-/H (few layer)-MoS2 MSJs remains to be elucidated, and p-type ohmic contact to MoS2 is difficult to realize due to the high ionization energy of MoS2. In the current work, we reveal a mechanism of two-dimensional (2D) semiconductors (2DSCs) layer-number-assisted metal-semiconductor (SC) interface engineering for Schottky barrier height (SBH) reduction and p-type ohmic contact is achieved based on this mechanism; 2DSCs here mean H (few layer)-MoS2 and metal-SC interfaces are the dT-/H-MoS2 interfaces with increasing 2DSC layers. Specifically speaking, the mechanism is as follows: (1) two competing effects coexist, namely, the interface dipole (ΔV) at the metal-SC interface and the quasibonding (QB) between all adjacent layers, with ΔV (QB) increasing (decreasing) SBH; (2) the effect of QB beats ΔV and hence the overall effect is decreasing SBH at the metal-SC interface; and (3) the SBH reduction effect increases with increasing 2DSC layers. The mechanism of 2DSC layer-number-assisted metal-SC interface engineering should apply also for other 2DSCs with a suitable metal and hence our current work paves an avenue for ohmic contact to few-layer 2DSCs by the accumulated interlayer QBs that widely present in 2DSCs. Published by the American Physical Society 2024

Optimization of Sr3NCl3-based perovskite solar cell performance through the comparison of different electron and hole transport layers

Strontium Nitride Trichloride (Sr3NCl3) is a promising absorber material for solar cells due to its unique structural, electrical, and optical properties. We conducted a thorough investigation to scrutinize the structural, optical, and electronic characteristics and the photovoltaic efficiency of double-heterojunction solar cells utilizing Sr3NCl3 absorbers. Various metals were evaluated for the front and rear contacts to determine the optimal metal-semiconductor interface, with the study determining that silver (Ag) is the most suitable option for the front contact and nickel (Ni) for the back contact. The PV performance of innovative Sr3NCl3 absorber-based cell structures was evaluated with two different Hole Transport Layers (HTLs), MASnBe3 and CBTS, alongside ZnO and WS2 serving as the transition metal dichalcogenide (TMD) Electron Transport Layers (ETLs). This investigation examined a range of factors, such as layer thickness, operational temperature, doping density, defect densities at both the interfaces and within the bulk, carrier generation and recombination rates, quantum efficiency (QE), series versus shunt resistance, absorption coefficient, and current density-voltage (J-V) characteristics, utilizing the SCAPS-1D simulator software. Fine-tuning of both two HTL and ETL revealed that the highest power conversion efficiency (PCE) of 27.34 % with JSC of 19.78 mA/cm2, fill factor (FF) of 88.84 %, and VOC of 1.56 V was achieved with MASnBe3 HTL and ZnO ETL, while the lowest PCE of 25.55 %, with JSC of 19.77 mA/cm2, FF of 89.07 %, and VOC of 1.45 V was obtained for CBTS HTL and WS2 ETL, respectively. These findings highlight the promising potential of Sr3NCl3 absorbers with ZnO as ETL and MASnBe3 as HTL for developing advanced perovskites heterostructure solar cells for enhanced performance in the future.

Enhancement of visible light adsorption and photocatalytic degradation activity of organic dye by coating semiconducting TiO2 shell on plasmonic Au particles

The plasmonic effect enhances light absorption in semiconductor photocatalysts, while the noble metal-semiconductor interface promotes charge carrier transfer and separation, boosting photocatalytic activity. However, current methods for synthesizing metal-core TiO2-shell nanoparticles face challenges, such as keeping stable and preventing aggregation. This study presents a simple and moderate synthesis method for Au@TiO2 core-shell nanoparticles, enabling precise control over the TiO2 shell thickness and stable photocatalytic performance. Various characterization techniques were employed to assess the optical and structural properties of the synthesized Au@TiO2 core-shell nanostructures. The results demonstrated that increasing the Au core concentration led to a gradual decrease in TiO2 shell thickness. The adsorption properties and photocatalytic degradation efficiency of the synthesized Au@TiO2 core-shell nanostructured catalysts were thoroughly examined, particularly focusing on their performance with methyl orange (MO) and methylene blue (MB). Au@TiO2 achieved excellent adsorption performance for MO, with a maximum capacity of 231±6 mg/g. Furthermore, Au@TiO2 exhibited higher photocatalytic degradation activity of both MO and MB than pure TiO2. The mechanism study indicated that it attributed to enhanced visible light absorption, reduced bandgap, and higher valence band energy. Additionally, the Au@TiO2 catalysts showed good cyclic stability, making them promising for future applications. This research offers insights into designing efficient photocatalysts, addressing existing synthesis challenges, and contributing valuable references for future advancements.

Epilayer thickness effect on the electrical and breakdown characteristics of vertical β-Ga2O3 Schottky barrier diode

The current–voltage and breakdown characteristics of Au/Ni/β-Ga2O3 Schottky barrier diodes were investigated as a function of β-Ga2O3 epilayer thickness in the range of 6–19 μm. The X-ray rocking curves indicated that the full-width half-maximum is reduced with increasing epilayer thickness, implying an improvement in the crystallinity of β-Ga2O3 epilayer. The barrier heights of the field-plated β-Ga2O3 Schottky barrier diode with epitaxial layer thickness of 6, 12, and 19 μm were obtained as 1.01, 1.03, and 1.04 eV, with the ideality factor values being 1.21, 1.19, and 1.46, respectively. The higher ideality factors could be associated with the existence of inhomogeneity at the metal–semiconductor interface. The series resistance of the Schottky diode obtained increased with increasing epilayer thickness. The Schottky diode fabricated on 19 μm thick epitaxial layer exhibited a higher breakdown voltage of 490 V. The increase in epilayer thickness led to the widening of depletion region, resulting in lower electric field over a larger distance. This could be a main cause of the enhancement of the breakdown voltage characteristics of β-Ga2O3 Schottky barrier diode.

Dual-Mode Reconfigurable Split-Gate Logic Transistor through Van der Waals Integration.

As silicon-based transistors approach their physical size limitations, two-dimensional material-based reconfigurable functional electronic devices are considered the most promising novel device architectures beyond Moore strategies. While these devices have garnered significant attention, they often require complex device fabrication processes and extra electric fields. Additionally, the device performance is usually limited by the metal-semiconductor interface properties. In this Letter, we have constructed a reconfigurable logic device based on a WSe2 transistor with a nanofloating gate and split-gates through van der Waals integration. This device achieves a small Schottky barrier height due to the van der Waals contacts. By varying the split-gate biases, we can realize volatile reconfigurable homojunctions as well as AND, OR, NOR, and NAND logic operations with just a single device. Furthermore, with the charge trapping effect of nanofloating gate, we can also achieve nonvolatile reconfigurable homojunctions, as well as AND and OR logic operations. The volatile and nonvolatile logic operations are similar to the short-term plasticity and long-term plasticity, respectively, of synapses in the human brain. This work offers a potential approach for creating novel reconfigurable functional electronic devices with a simple fabrication process and low cost.

Increasing the efficiency of CIGS solar cells due to the reduced graphene oxide field layer of the back surface

Copper indium gallium selenide solar cells (CIGS-SCs) have gained attention due to their cost-effectiveness and environmentally friendly characteristics, making them a promising option for future electricity generation. The efficiency of CIGS-SCs can be enhanced by adding a back surface field layer (BSFL) under the absorber layer to reduce recombination losses. In this study, the electrical parameters, such as the series resistance, shunt resistance, and ideality factor, are calculated for CIGS-SCs with an advanced design, using the SC capacitance simulator (SCAPS) software. The detailed model used in the simulations considers the material properties and fabrication process of BSFL. By utilizing a reduced graphene oxide (rGO) BSFL, a conversion efficiency of 24% and a significant increase in the fill factor are predicted. This increase is primarily attributed to the ability of the rGO layer to mitigate the recombination of charge carriers and establish a quasi-ohmic contact at the metal-semiconductor interface. At higher temperatures, BSFL can become less effective due to an increased recombination and, in turn, a decreased carrier lifetime. Overall, this study provides valuable insights into the underlying physics of CIGS-SCs with BSFL and highlights the potential for improving their efficiency through advanced design and fabrication techniques.

High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact.

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs), such as tungsten diselenide (WSe2), hold immense potential for applications in electronic and optoelectronic devices. However, a significant Schottky barrier height (SBH) at the metal-semiconductor (MS) interface reduces the electronic device performance. Here, we present a unique 2D/2D contact method for minimizing contact resistance and reducing the SBH. This approach utilizes vanadium-doped WSe2 (V-WSe2) as the drain and source contacts. The fabricated transistor exhibited a stable operation with p-type quasi-ohmic contact and a high on/off current ratio surpassing 108 at room temperature, reaching 1011 at 10 K. The device achieved an on-current of 68.87 μA, a high mobility of 103.80 cm2 V-1 s-1, a low contact resistance of 0.92 kΩ, and remarkably low SBH values of 1.51 meV for holes at VGS = -120 V with fixed VDS = 1 V. Furthermore, a Schottky photodiode has been fabricated, utilizing V-WSe2 and Cr as the asymmetric contact platform, showing a responsivity of 116 mA W1-. The findings of this study suggest a simple and efficient method for improving the performance of TMDC-based transistors.

Surface plasmon-induced various characteristics of Gold@Copper oxide nanostructures

The combined effect of metal incorporated semiconductor nanostructures (NSs) provides hybrid, proficient and more functional properties that are difficult to be provided by single component NSs in modern applications and industry. A facile seed growth method is adapted for the synthesis of gold coated by cuprous oxide (Au@Cu2O) core@shell NSs that are functionalized in their shell thickness and surface states. As synthesized Au@Cu2O core@shell cubic NSs contain single cubic Au as a core material with varying Cu2O shell thickness, confirmed by their microscopic analysis. Various spectroscopic analyses are is accomplished to confirm the chemical structure, crystallinity, oxidation state and binding energy of the concerned material over the core's surface. Optical absorption properties of core@shell NSs are greatly affected causing a shift in the surface plasmon resonance (SPR) peaks intensities with increase of the shell size. Photoluminescence (PL) spectra explain influence of Cu2O shell morphology over the emission characteristics that an increasing shell thickness caused an enhancement in PL emission peak along with red-shift of the peak. The elemental quantifying is done by XPS technique to provide a detailed surface reaction chemistry about oxidation states of copper. The charge-transfer at the metal-semiconductor interface results in highly intense and selective enhanced SERS signals via PL quenching, using Rhodamine-6G as the probe. The results provide useful information for preparation of various Au@Cu2O NSs for applications involving charge-transfer and SPR based interaction.

Facile formation of van der Waals metal contact with III-nitride semiconductors

Metal–semiconductor contacts play a pivotal role in controlling carrier transport in the fabrication of modern electronic devices. The exploration of van der Waals (vdW) metal contacts in semiconductor devices can potentially mitigate Fermi-level pinning at the metal–semiconductor interface, with particular success in two-dimensional layered semiconductors, triggering unprecedented electrical and optical characteristics. In this work, for the first time, we report the direct integration of vdW metal contacts with bulk wide bandgap gallium nitride (GaN) by employing a dry transfer technique. High-angle annular dark-field scanning transmission electron microscopy explicitly illustrates the existence of a vdW gap between the metal electrode and GaN. Strikingly, compared with devices fabricated with electron beam-evaporated metal contacts, the vdW contact device exhibits a responsivity two orders of magnitude higher with a significantly suppressed dark current in the nanoampere range. Furthermore, by leveraging the high responsivity and persistent photoconductivity obtained from vdW contact devices, we demonstrate imaging, wireless optical communication, and neuromorphic computing functionality. The integration of vdW contacts with bulk semiconductors offers a promising architecture to overcome device fabrication challenges, forming nearly ideal metal–semiconductor contacts for future integrated electronics and optoelectronics.

Reduced Ag NPs-modified NaTaO3 layer improves photocatalytic degradation and antimicrobial ability through LSPR effect and doping behavior

Reduced Ag NPs modified Ag-doped NaTaO3 layer photocatalysts were prepared using the hydrothermal method. The research investigated the microstructure and degradation ability of composite layer containing Ag-NaTaO3. Various techniques, including SEM,TEM, XRD, UV–Vis and PL analyses, were used for the evaluation. The antibacterial effect of the Ag-NaTaO3 layers on Staphylococcus aureus (S. aureus) before and after modification with reduced Ag NPs was evaluated. The Ag-NaTaO3 composite layer showed stronger degradation effect and bactericidal activity than NaTaO3 under the optimal conditions (Concentration of Ag+-containing solution 0.1 mol/L, reaction temperature 200 ℃, reaction time 3 h). The degradation efficiency of Ag3-NaTaO3 for MB was 87.6 % after 50 min, and the bactericidal inhibition rate was 100 % after 20 min. The degradation process, with electron hole (h+) as the main active substance, conforms to the first-order kinetic with a rate constant (K) value of 0.0310 min−1. The band gaps (Eg) of the calculated pure phase NaTaO3 and Ag3-NaTaO3 are 3.18 eV and 2.75 eV, correspondingly. The fluorescence decay spectra indicate that the average expected lifetimes of Ag3-NaTaO3 composites rounded is 11.45 ns, respectively. The NaTaO3 nano-cubic structure, prepared using Ta2O5 precursor, reduces the grain size, provides more surface active sites, and effectively improves the range of the NaTaO3 photoresponse. AgNO3 solution is used to reduce Ag NPs and carry out doping behavior. The LSPR behavior of Ag NPs and the doping behavior of Ag lower the Schottky barrier that is made up of the metal–semiconductor interface. This ensures that the hot metal electrons are injected into the semiconductors efficiently, improves the electron-hole (h+) separation efficiency, and enhances the photocatalytic activity. The bacterial structure was destroyed through a dual mechanism of reactive oxygen species (ROS) (·OH, ·O2–) and Ag properties, achieving excellent bacterial inhibition. This study proposes a new concept to enhance the photocatalytic performance of NaTaO3 thinfilm materials, which will could have significant applications in the field of wastewater treatment.

Comparative study of Ti/Al and Ti/Al/Ti/Au ohmic contacts to AlGaN/GaN heterostructures

We investigated the electrical properties and the ohmic contact formation considering Ti/Al and Ti/Al/Ti/Au ohmic contact metallization schemes on AlGaN/GaN heterostructures. The specific contact resistance of contacts was determined by characterizing the current–voltage relation from TLM measurement. The lowest value for the specific contact resistivity was obtained using Ti/Al/Ti/Au metallization. An interfacial TiN layer was monitored at the contact-AlGaN interface. TiN phases were found at both contacts, but the thickness in the Ti/Al/Ti/Au contact reached 8 nm, while the thickness in Ti/Al was thinner and discontinuous. The surface roughness of the Ti/Al/Ti/Au contact was determined as 8.17 nm and that of the Ti/Al contact as 36.23 nm. It was found that the spesific contact resistance depends on the atomic structure of the metal–semiconductor interface and composition and structure of the ohmic contact layers. These results showed that it is possible to achieve higher reliability and uniformity as well as lower contact resistance in AlGaN/GaN HEMTs with Ti/Al/Ti/Au contact compared to Ti/Al contact.

All-in-One: Plasmonic Janus Heterostructures for Efficient Cooperative Photoredox Catalysis.

Janus heterostructures consisting of multiple jointed components with distinct properties have gained growing interest in the photoredox catalytic field. Herein, we have developed a facile low-temperature method to gain anisotropic one-dimensional Au-tipped CdS (Au-CdS) nanorods (NRs), followed by assembling Ru molecular co-catalyst (RuN5) onto the surface of the NRs. The CdS NRs decorated with plasmonic Au nanoparticles and RuN5 complex harness the virtues of metal-semiconductor and inorganic-organic interface, giving directional charge transfer channels, spatially separated reaction sites, and enhanced local electric field distribution. As a result, the Au-CdS-RuN5 can act as an efficient dual-function photocatalyst for simultaneous H2 evolution and valorization of biomass-derived alcohols. Benefiting from the interfacial charge decoupling and selective chemical bond activation, the optimal all-in-one Au-CdS-RuN5 heterostructure shows greatly enhanced photoactivity and selectivity as compared to bare CdS NRs, along with a remarkable apparent quantum yield of 40.2 % at 400 nm. The structural evolution and working mechanism of the heterostructures are systematically analyzed based on experimental and computational results.

Unassisted photoelectrochemical CO2-to-liquid fuel splitting over 12% solar conversion efficiency

The increasing need to control anthropogenic CO2 emissions and conversion to fuels features the necessity for innovative solutions, one of which is photoelectrochemical system. This approach, capable of yielding gaseous production progressively, is facing challenges for liquid fuels generation due to optical, electrical, and catalytic properties. This study employs a standalone photoelectrochemical setup, in which InGaP/GaAs/Ge photoanode is integrated with tin-modified bismuth oxide cathode to convert CO2 into liquid formic acid. In unassisted two-electrode assembly, setup exemplifies its operational durability for 100 h, during which it maintains an average Faradaic efficiency of 88% with 17.3 mmol L–1 h–1 of yield, thereby excelling in average solar-to-fuel conversion efficiency at 12% with 60% of electrical energy efficiency under one sun illumination. This significant performance is further associated with metal-semiconductor interface formation between tin and bismuth oxide, which bridges electronic structures and generates an electric field at their interfaces. This study outperforms conventional solar-driven systems in operational durability and liquid fuel production.

Schottky-Barrier-Free Plasmonic Photocatalysts for Solar-Driven Ammonia Synthesis

Ammonia is not only an indispensable feedstock to produce essential industrial chemicals like fertilizers, but it is also a potential hydrogen energy carrier owing to its high energy density and hydrogen capacity. Currently, most ammonia required for humans comes from the Haber–Bosch process, which contributes more than 90% of the annual global ammonia output. However, the harsh reaction conditions of this process result in serious energy and environmental issues. According to the relevant statistics, the ammonia industry consumes about 2% of the total energy and generates about 1.6% of the total CO2 emission annually in the world.It is therefore crucial to develop a green and sustainable strategy for ammonia synthesis. Among various alternative technologies of the Haber–Bosch process, artificial photosynthesis has attracted wide research interests and has been regarded as a promising, environmentally friendly, and energy-saving process. Photocatalytic ammonia synthesis can utilize renewable solar energy to drive the reaction and operate under mild conditions, which possesses the benefits of the simple reaction system, low cost, and safety. Although numerous photocatalysts have been explored over the past several decades, their activity and efficiency have still been low and far from the practical application requirements. It is therefore a huge challenge to design efficient photocatalysts for ammonia synthesis.Localized surface plasmon resonance (LSPR) has recently drawn enormous attention. LSPR can not only endow plasmonic nanomaterials with large absorption cross-sections and intense local field enhancement but also generate energetic hot electrons and hot holes. Owing to the appealing features of LSPR, plasmonic photocatalysis has shown great potential in ammonia synthesis. Plasmonic photocatalysts are usually composed of noble metals and wide bandgap semiconductors. However, the Schottky barrier will form at the metal–semiconductor interface in such hybrid structures due to the mismatch of the band structures between plasmonic metals and semiconductors. Hence, a large portion of the hot electrons cannot cross the Schottky barrier and get lost in the metal through the recombination with the holes. To overcome the drawbacks caused by the Schottky barrier, it is strongly desirable to develop a new type of plasmonic semiconductor photocatalysts, i.e., Schottky-barrier-free plasmonic photocatalyst.The Schottky-barrier-free plasmonic photocatalysts are usually degenerately doped semiconductors containing lattice oxygen vacancies. They possess high free electron densities and strong plasmon resonance because of the high-level doping, which results in abundant hot charge carriers upon plasmon excitation. Moreover, they also have appropriate surface sites that can adsorb reactant molecules and activate them. The photogenerated plasmonic hot charge carriers can get trapped at the defect sites and thereafter drive redox reactions. Compared with traditional metal–semiconductor hybrid plasmonic photocatalysts, Schottky-barrier-free plasmonic photocatalysts enable hot charge carriers to be transported nearly freely in the material, resulting in high charge utilization and photocatalytic efficiency.We have demonstrated the synthesis of Schottky-barrier-free plasmonic MoO3−x nanospheres (NSs) with remarkably high oxygen vacancy (OV) contents by aerosol-spray. The MoO3−x NSs can achieve efficient ammonia photosynthesis through a “killing two birds with one stone” mechanism. On the one hand, the OVs can serve as chemisorption sites for N2 molecules and participate in their activation. On the other hand, the introduction of OVs generates a large number of free electrons near the conduction band, which induces a broad absorption band from the visible to the NIR region owing to the plasmon resonance. The Schottky-barrier-free nature of this plasmonic semiconductor allows free transportation of the plasmonic hot charge carriers, while the defect states introduced by the OVs can effectively trap the hot electrons to prevent rapid electron–hole recombination. As expected, the as-prepared material exhibits a superior ammonia production rate, with the highest apparent quantum efficiency (AQE) of 1.24% at 808 nm and an appreciable solar-to-ammonia conversion efficiency (SACE) of 0.057% for NH3 production. Besides MoO3−x , WO3−x is also an excellent candidate for Schottky-barrier-free plasmonic photocatalysts. We have synthesized square WO3−x nanoplates hydrothermally. The WO3-x nanoplates possess regular morphology, wide light absorption, and great ammonia production performance. Furthermore, by introducing doping elements (Mo, V, Fe, Bi) into WO3−x nanoplates, the N2 activation and dissociation can be improved by refining the defect states. The Mo-doped WO3−x nanoplates exhibit the highest ammonia production rate of 145.50 μmol g−1 h−1 with SACE of 0.011% since the Mo species can promote the chemisorption and polarization of N2 molecules and significantly reduce the reaction barrier. Notably, Mo-doped WO3−x nanoplates are a dual-function photocatalyst that can oxidize water to hydrogen peroxide in a stoichiometric ratio while synthesizing ammonia. Figure 1

Prospects of silicide contacts for silicon quantum electronic devices

Metal contacts in semiconductor quantum electronic devices can offer advantages over doped contacts, primarily due to their reduced fabrication complexity and lower temperature requirements during processing. Some metals can also facilitate ambipolar device operation or form superconducting contacts. Furthermore, a sharp metal–semiconductor interface allows for contact placement in close proximity to the active device area avoiding damage caused by dopant implantation. However, in the case of gate-defined quantum dots in intrinsic silicon, the formation of a Schottky barrier at the silicon–metal interface can lead to large, nonlinear contact resistances at cryogenic temperatures. We investigate this issue by examining hole transport through metal oxide-semiconductor transistors with platinum silicide contacts on intrinsic silicon substrates. We extract the contact and channel resistances as a function of temperature and improve the cryogenic conductance of the device by more than an order of magnitude by implementing meander-shaped contacts. In addition, we observe signatures of enhanced transport through localized defect states, which we attribute to platinum clusters in the depletion region of the Schottky contacts that form during the silicidation process. These results showcase the prospects of silicide contacts in the context of cryogenic quantum devices and address associated challenges.

Epitaxial Growth of Two-Dimensional MoO2-MoSe2 Metal-Semiconductor Heterostructures for Schottky Diodes.

The metal-semiconductor interface fabricated by conventional methods often suffers from contamination, degrading transport performance. Herein, we propose a one-pot chemical vapor deposition (CVD) process to create a two-dimensional (2D) MoO2-MoSe2 heterostructure by growing MoO2 seeds under a hydrogen environment, followed by depositing MoSe2 on the surface and periphery. The ultraclean interface is verified by cross-sectional scanning transmission electron microscopy and photoluminescence. Along with the high work function of semimetallic MoO2 (Ef = -5.6 eV), a high-rectification Schottky diode is fabricated based on this heterostructure. Furthermore, the Schottky diode exhibits an excellent photovoltaic effect with a high open-circuit voltage of 0.26 eV and ultrafast photoresponse, owing to the naturally formed metal-semiconductor contact with suppressed pinning effect. Our method paves the way for the fabrication of an ultraclean 2D metal-semiconductor interface, without defects or contamination, offering promising prospects for future nanoelectronics.

The electrical and dielectric features of Al/YbFeO3/p-Si/Al and Al/YbFe0.90Co0.10O3/p-Si/Al structures with interfacial perovskite-oxide layer depending on bias voltage and frequency

In this investigation, thin films of YbFeO3, both in its pure form and doped with 10% Co, were fabricated on a p-Si substrate at 500 °C through the radio-frequency magnetron sputtering method. Examination via Scanning Electron Microscopy demonstrated a porous texture for the pure sample, contrasting with a smooth and crack-free surface post-Co doping. Analysis via X-ray photoelectron spectroscopy unveiled Yb’s 3 + oxidation state, alongside the presence of lattice oxygen, oxygen vacancies, and adsorbed oxygen evident in Gaussian fitting curves. Photoluminescence spectroscopy revealed an augmented emission intensity, likely attributed to increased defect initiation in the Co-doped specimen. Moreover, Raman spectroscopy was employed to identify vibration modes in the examined samples, demonstrating shifts in Raman peaks indicative of Co substitution and subsequent distortion in the crystal structure of YbFeO3. Electrical assessments were conducted at room temperature (300 K) under ambient conditions, employing voltage and frequency as variables. Capacitance–voltage measurements illustrated the emergence of an accumulation, with depletion and inversion regions manifesting at different frequencies based on the applied voltage, attributed to the YbFeO3 interfacial layer at the Al and p-Si interface. The conductance-voltage characteristics indicated that the structure exhibited maximum conductance in the accumulation region. Series resistance for these configurations was deduced from capacitance-conductance-voltage measurements, indicating a dependence on both bias voltage and frequency. The doping process led to a reduction in capacitance and series resistance, accompanied by an increase in conductance values. After obtaining corrected capacitance and conductance parameters, it became evident that series resistance significantly influences both parameters. Interface state density (Nss), determined through the Hill-Coleman relation demonstrated a decreasing trend with increasing frequency. The pure sample exhibited higher interface state density compared to the Co-doped sample at each frequency, highlighting that the 10% Co-doped YbFeO3 thin film enhances the quality of the metal–semiconductor interface properties compared to the pure contact.

Au nanoparticles decorated ZnIn2S4/WO3 core-shell heterostructures as highly sensitive and selective ethylene glycol gas sensors

Ethylene glycol (EG) is extensively utilized as anti-freezer and deicer, which would bring potential health risk under unintentional exposures especially with hazardous inhalation of EG aerosols or vapors. In this study, ZnIn2S4 (ZIS)/WO3 core-shell nanofibrous heterostructure loaded with optimized Au nanoparticles (NPs) was prepared for superiorly sensitive and selective EG gas sensing. The ternary Au/ZIS/WO3 heterostructures exhibited an excellent response (Ra/Rg=98.92) to 50 ppm EG, demonstrating an enhancement of 3.5 times compared to the binary ZIS/WO3, and a substantial improvement of 59.5 and 24.1 times compared to pure WO3 and ZIS, respectively. The ternary Au/ZIS/WO3 heterostructures also possessed an extremely low detection limit of 6 ppb, as well as excellent selectivity, repeatability, and long-term stability. This exceptional gas sensing performance can be attributed to its distinctive ternary Au/ZIS/WO3 heterostructures with high specific surface areas. This unique structure not only facilitate the activation of abundant active oxygen species, but also promote the spillover effect of Au and enhance effective electronic distribution, thereby providing more EG adsorption sites, which was confirmed by density functional theory calculation. The synergistic effect arising from the metal-semiconductor interface and the core-shell heterostructure presents a novel avenue for advancing high-performance sensor technologies.

Low Resistance Contact to P-Type Monolayer WSe2.

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal-semiconductor interface. In this study, we develop a charge-transfer doping strategy with WSe2/α-RuCl3 heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe2 transistors. We show that hole doping as high as 3 × 1013 cm-2 can be achieved in the WSe2/α-RuCl3 heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe2 transistors with an on-current of 35 μA·μm-1 and an ION/IOFF ratio exceeding 109 at room temperature.

Gate-controlled spin injection polarity in 2D transistors with Schottky barrier

In 2D semiconductors, the Schottky barrier formed at the metal–semiconductor interface plays a crucial role in controlling electron and spin injection. To explore the spin injection mechanism under gate control, we study MoS2 coupled to ferromagnetic metals. We introduce a spin drift diffusion model which is applicable to the Schottky contact. In this system, the current passing through the Schottky barrier can be larger for the minority spin than for the majority spin due to the tunnel effect. We observe a polarity switching in spin injection with gate voltage variation when the conduction band bottom of the minority spin ferromagnetic metal is closely aligned with the Fermi level. Our results also suggest the spin injection efficiency can be tuned by gate control for half-metals.