Metal Oxide Semiconductor Research Articles

Ultra-compact on-chip camera based on optoelectronic compound eyes with nonuniform ommatidia

Abstract Compound eyes (CEs) that feature ultra-compact structures and extraordinary versatility have revealed great potential for cutting-edge applications. However, the optoelectronic integration of CEs with available photodetectors is still challenging because the planar charge-coupled device (CCD)/complementary metal oxide semiconductor (CMOS) detector cannot match the spatially distributed images formed by CE ommatidia. To reach this end, we report here the optoelectronic integration of CEs by manufacturing 3D nonuniform ommatidia for developing an ultra-compact on-chip camera. As a proof-of-concept, we fabricated microscale CEs with uniform and nonuniform ommatidia through femtosecond laser two-photon photopolymerization, and compared their focusing/imaging performance both theoretically and experimentally. By engineering the surface profiles of the ommatidia at different positions of the CE, the images formed by all the ommatidia can be tuned on a plane. In this way, the nonuniform CE can be directly integrated with a commercial CMOS photodetector, forming an ultra-compact CE camera. Additionally, we further combine the CE camera with a microfluidic chip, which can further serve as an on-chip microscopic monitoring system. We anticipate that such an ultra-compact CE camera may find broad applications in microfluidics, robotics, and micro-optics.

Development of a DualEmission Laser-Induced Fluorescence (DELIF) Method for Long-Term Temperature Measurements

The fluorescence intensity of fluorescent dyes typically employed in the dual-emission laser-induced fluorescence (DELIF) method gradually degrades as the excitation time increases, and the degradation rate depends on the type of fluorescent dye used. Therefore, the DELIF method is unsuitable for long-term temperature measurements. In this study, we focused on the fluorescence intensity ratio of a single fluorescent dye at two fluorescence wavelengths and developed a DELIF method for long-term temperature measurements based on this ratio. The fluorescence intensity characteristics of Fluorescein disodium and Rhodamine B, which are typically used in the DELIF method, in the temperature range of 10–60 °C were comprehensively investigated using two high-speed monochrome complementary metal-oxide semiconductor cameras and narrow bandpass filters. Interestingly, the ratio of the fluorescence intensity of each fluorescent dye at the peak emission wavelength of the fluorescence spectrum, λ, to the fluorescence intensity at wavelengths very close to the peak wavelength (λ ± 10 nm) was highly sensitive to temperature variations but not excitation time. Particularly, when Rhodamine B was used, the selection of the fluorescence intensity ratios at a wavelength combination of 589 and 600 nm enabled highly accurate temperature measurements with a temperature resolution of ≤0.042 °C. Moreover, the fluorescence intensity ratio varied negligibly throughout the excitation time of 180 min, with a measurement uncertainty (95% confidence interval) of 0.045 °C at 20 °C. The results demonstrate that the proposed DELIF method enables highly accurate long-term temperature measurements.

VOC Detection with Zinc Oxide Gas Sensors: A Review of Fabrication, Performance, and Emerging Applications

Energy‐efficient, high‐specificity gas sensors provide practical suitability for stability and response factors. The recognition of ignitable gases (methane (CH <sub>4</sub>), propane (C <sub>3</sub>H <sub>8</sub>), and hydrogen (H <sub>2</sub>) and harmful gases (carbon oxide (CO) and hydrogen sulfide (H <sub>2</sub>S)) in an enclosed and out‐of‐door space are essential to safeguard the human lives and infrastructural spaces. One of the crucial conductive‐type metal oxide semiconductor (MOS) gas sensors yielding wide applications is zinc oxide (ZnO). This study highlights the various types of ZnO gas sensors, their fabrication techniques, and specific vital characterizations. The devices based on MOS are utilized to sense various target gases through redox reactions. The variation in oxide surface with target gas interactions is transduced to a change of sensor conductance. This review also provides insight into integrating ZnO gas sensors with technologies such as materials engineering, the Internet of things and big data. Moreover, this review addresses ZnO gas sensors' challenges and future directions.

Effectively Improved CH4 Sensing Performance of In2O3 Porous Hollow Nanospheres by Doping with Cd.

Recently, due to the promising application of metal oxide semiconductors in high-performance methane (CH4) sensors, more attention has been paid to the development of feasible strategies for improving CH4 sensing performance. Herein, we present a strategy of cadmium (Cd) doping to improve the CH4 sensing property of In2O3 porous hollow nanospheres (PHNSs). The Cd-doped In2O3 PHNSs were prepared via an impregnation-calcination approach with self-made carbon nanospheres as a hard template. The samples were characterized by various techniques to evaluate their structure, morphology, surface state, composition, and band gap. When applied as a sensitive material in the CH4 sensor, the Cd-doped In2O3 PHNSs, compared with bare In2O3 PHNSs, showed some significant improvements in performance, especially a reduced operating temperature (200 °C vs 300 °C), an enhanced response (9.5 vs 2.5 for 500 ppm of CH4), a faster response speed (16 s vs 276 s), and better selectivity. In addition, the Cd-doped In2O3 sensor can also maintain a commendable long-term stability, and the range of its response amplitude within 30 days is only 6.3%. The sensitization effects of the Cd dopant on the In2O3 PHNSs are discussed.

Comparative Analysis of Structural, Optical, and Electronic Properties of Nickel Oxide and Potassium‐Doped Nickel Oxide Nanocrystals

ABSTRACTMetal oxide semiconductors, known for their exceptional optical transparency, high carrier mobility, and stability, have found extensive use in emerging technologies such as optoelectronics and energy storage devices. Among all metal oxide semiconductors, nickel oxide (NiO) stands out as a highly favorable candidate due to its p‐type conductivity along with its substantial band gap (3.5–4 eV) for the broad range of applications, including gas sensors, high‐rate Lithium‐ion batteries, high‐performance supercapacitors, and photovoltaic devices. In light of these versatile applications, our current study presents a comprehensive comparative analysis of the structural and optoelectronic properties of NiO and potassium (K)‐doped NiO nanocrystals. The nanocrystals were synthesized using the co‐precipitation route and subsequently annealed at 500°C under ambient conditions. The effect of K doping on the structural and optoelectronic characteristics was systematically examined using various techniques, including x‐ray diffraction, UV–visible spectroscopy, Raman spectroscopy, and Hall effect measurements. To explore the structural characteristics, XRD measurements were performed, which confirm the FCC structure of nanocrystals. The optical property analysis suggested that the formation of the energy level can contribute to reduction of the band gap. A sharp peak at 397 cm−1 is associated with NiO bond in FTIR spectra which verifies the formation of nanocrystals. Moreover, the incorporation of K increases the intensity of the Raman peaks, which provides evidence for the higher degree of crystallinity in doped samples. These results of Raman scattering are in good agreement with XRD outcomes. In addition, the resistivity of NiO nanocrystals decreases monotonically with the increasing K concentration. The results of temperature‐dependent resistivity further demonstrate that electrons required more energy to jump from one polaron state to another in the case of x = 0.01 M and 0.03 M doped Ni0.5‐xKxO samples. The combination of a diminished band gap and enhanced conductivity makes these materials exceptionally promising for applications in optoelectronics and energy storage.

Tunneling Current Calculation Using the Linear‐Bound Potential Model

A model of the tunneling current through an ultrathin insulating barrier coming from carriers in an inversion layer using a simple linear potential model is presented. This model provides analytical expressions for the wavefunctions of these carriers and simple equations to obtain numerically their corresponding eigenvalues. These expressions can be inserted in the tunneling current equation allowing a more simple understanding of the physics involved in this tunneling problem. As an example, one can fit the experimental results for the leakage current obtained by different authors in planar metal oxide semiconductor field effect transistors and also in a LaAlO3/SrTiO3 and a HfO2/Ge bilayer. The modification of the tunneling current when the dielectric constant is increased, a subject of interest in device applications, is explored.

ZnO/Organic superlattice with phase composite structure for enhanced thermoelectric performance at low temperature

Semiconducting metal oxides, such as zinc oxide (ZnO), are gaining recognition for thermoelectric applications due to their temperature stability, availability, eco-friendliness, and cost-effectiveness. However, ZnO faces challenges in achieving high ZT value due to its low carrier concentration and high thermal conductivity. Traditional methods, like doping and defect engineering, have shown limited success in overcoming these challenges. In this study, we introduce a unique superlattice structure with a phase-composite composition that significantly decreases thermal conductivity through enhanced phonon scattering while maintaining the power factor by inducing new resonant conducting states near the mobility edge. By optimizing nanolayer thickness and doping concentration, we achieved a remarkable power factor of 14.6 μW cm−1 K−2 and reduced thermal conductivity to ∼1.97 W m−1 K−1 at room temperature in samples with 6 nm-thick ZnO nanolayers fabricated at 100 °C. This leads to a ZT value of ∼0.22 at 300 K, the highest among metal oxide thermoelectric materials at low temperatures, which further increases to ∼0.55 at 510 K. These findings demonstrate the potential of hybrid superlattices for efficient low-temperature thermoelectric applications.

Development of an inductive energy storage pulsed power supply using SiC semiconductor devices for ozone production by streamer discharges

An inductive energy storage (IES) pulsed power generator driven by a silicon carbide metal oxide semiconductor field effect transistor (SiC-MOSFET) with a blocking voltage of 1.2 kV was developed. The IES pulsed power generator consists of a capacitor, a pulsed transformer and the SiC-MOSFET used as an opening switch. The influence of the turn ratio of the pulsed transformer on the output voltage was evaluated. The output voltage amplitude increased with increasing secondary turn ratio. Under the conditions of no load, a peak output voltage of 13 kV and a pulse width of 120 ns were obtained with a voltage across the drain–source terminals of the MOSFET of 1 kV. The peak voltage increased, and the peak current and pulse width decreased, with increasing load resistance and decreased capacitance. The maximum energy transfer efficiency was obtained at 500 Ω and was approximately 56%.

Silica conversion of polysilazanes by low-temperature plasma jet generated from Ar and water-vapor mixed gas

Perhydropolysilazane (PHPS), which contains no organic catalyst, chemically reacts with H2O in the atmosphere by heating it at 450 °C for more than 1 h to turn it into a SiO2 film. If silica conversion can be achieved at temperatures below 100 °C, which plastics can withstand, it may be applicable to a wide range of applications, such as flexible electronics. Here, we report a technique for forming SiO2 films with leakage current characteristics very close to those of thermally oxidized (THOX) films that works at a very low temperature of 52 °C with high speed. Using a 9-kV, 30-kHz power supply, a low-temperature plasma jet containing a gas mixture of Ar and water vapor irradiated an 8 nm thick PHPS thin film, inducing silica conversion at a maximum substrate temperature of 52 °C. The current density-electric field strength (J-E) characteristics of metal oxide semiconductor capacitors fabricated with this SiO2 film showed characteristics very close to those of THOX films. In addition, the mechanism of silica conversion of PHPS through low-temperature plasma jet irradiation using this gas mixture was clarified in real-time FT-IR measurements.

Comprehensive Study of Low-Power SRAM Design Topologies

: The need for low power in portable and smart devices is the demand to be fulfilled for sustaining the semiconductor industry. Static Random Access Memory (SRAM) is the main part of the core design in chips. It is important to reduce the leakage power consumption during the steady mode of the device for the long run of the battery. This article is about the study of different modules using pre-existing low power. Application of different methods other than lowering the supply voltage leads to an increment in the number of transistors in conventional 6T (six transistor) SRAM cells like 7T to 14T. Power gating and the Multi-threshold complementary metal oxide semiconductor (MTCMOS) technique is the most relevant method. Hybrid low power techniques are in high demand because it shows better results than using individual techniques. However, the biggest challenge is to maintain the area and delay as well. FinFET came into the scenario to overcome the leakage power and short channel effect due to scaling in CMOS. Comparative study analysis shows that FinFET decreases the overall power and delay even when the number of transistors increases. A comparison was done between 6T, 8T, and 10T using FinFET and CMOS in a paper, and concluded that FinFET shows 77.792% improved write power.

Silicon rich nitride: a platform for controllable structural colors

Abstract High refractive index dielectric materials like silicon rich nitride (SRN) are critical for constructing advanced dielectric metasurfaces but are limited by transparency and complementary metal oxide semiconductor (CMOS) process compatibility. SRN’s refractive index can be adjusted by varying the silicon to nitride ratio, although this increases absorption, particularly in the blue spectrum. Dielectric metasurfaces, which utilize the material’s high dielectric constant and nano-resonator geometry, experience loss amplification due to resonance, affecting light reflection, light transmission, and quality factor. This study explores the impact of varying the silicon ratio on structural color applications in metasurfaces, using metrics such as gamut coverage, saturation, and reflection amplitude. We found that a higher SRN ratio enhances these metrics, making it ideal for producing vivid structural colors. Our results show that SRN can produce a color spectrum covering up to 166 % of the sRGB space and a resolution of 38,000 dots per inch. Fabricated samples vividly displayed a parrot, a flower, and a rainbow, illustrating SRN’s potential for high-resolution applications. We also show that SRN can provide a better CIE diagram coverage than other popular metasurfaces materials. These findings highlight the advantages of SRN for photonic devices, suggesting pathways for further material and application development.

Synthesis and Advanced Applications of Transition Metal Oxides

Transition metal oxide semiconductor materials have gained significant attention in recent years because of their unique electrical, magnetic, and optical features. Transition metal oxides (TMOs) with partially filled d-shells have a wide range of characteristics and play important roles in a variety of technological applications. They are influenced by stoichiometry changes, which alter their physical, chemical, and electrical properties. Controlled synthesis, doping, and post-synthesis treatments can all have an impact on the size, shape, crystal structure, and overall attributes of TMOs. These changes affect applications such as magnetic materials and smart windows. Effective techniques include valence state control, dopants, alloying, structure engineering, nano and defect structuring, and surface modification. This article discusses the synthesis methods, crystal structures, electrical properties, and applications of transition metal oxides, as well as their involvement in cutting-edge technologies such as electronics, optoelectronics, energy storage, and catalysis.

Gate control of superconducting current: Mechanisms, parameters, and technological potential

In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS, and the material and device parameters that mostly affect it based on the evidence reported. We conclude that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS can have toward high-performance computing with low-energy dissipation and quantum technologies.

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

—With the rapid applications of silicon carbide metal–oxide–semiconductor field-effect transistor (SiC MOSFET) power devices, further improving the performance of SiC MOSFET device through enhancing its gate oxide reliability is one of the crucial directions. The density of interface states in a SiC MOSFET is a significant parameter that affects the reliability of the gate oxide layer. In this paper, the SiC MOS capacitors (MOSCAPs) were prepared by the 1250 °C dry oxidation and 1350 °C NO annealing process. Then, we analyzed the mechanisms of the breakdown by two group of ramped experiment. And we still evaluated the reliability of oxide layer via the high-temperature time-dependent dielectric breakdown (TDDB) tests on the prepared MOSCAPs, meanwhile, the temperature effect on the reliability was considered. Furthermore, the E, 1/E, and E models with Weibull plotting were used to calculate the tBD lifetimes and failure analysis was carried on the failed samples finally. The results indicate that: (1) the impact of the generation and accumulation of the traps in the oxide, which is the main mechanisms of device failure; (2) The prediction of lifetime was calculated with three models at different acceleration factors; (3) at high-temperature, although the lower the density of interface states is, the Si epitaxial growth and C cluster will manifest in the oxide surface and lead to the breakdown of SiC MOSCAPs.

Enhanced water splitting on (010) facet-exposed BiVO4 photoanode with improved carrier injection efficiency

Transition metal oxide semiconductors, noted for their stability and suitable bandgap, are promising photoanodes for water splitting. Surface engineering is critical to tackle issues like low carrier mobility and charge recombination, stemming from atomic arrangement and Fermi level differences. While exposing dominant crystal facets boosts photocatalytic capability, it can hinder carrier injection into the electrolyte. In this study, BiVO4 films with various facet exposures were synthesized and characterized using scanning electron microscopy and x-ray diffraction to confirm their morphology and crystalline structure. Mott–Schottky analysis was employed to investigate changes in the band structure near the semiconductor–electrolyte interface, revealing that high (010)-BiVO4 facet exposure enhances carrier separation but reduces injection efficiency. The results from photoconductive atomic force microscopy tests demonstrated that enhanced band bending at the semiconductor interface improves hole transfer. Coating the (010)-BiVO4 photoanode with MoS2 and an amorphous ZrO2 interlayer yielded a photocurrent density of 0.6 mA cm−2 at 1.2 V (vs RHE) under AM 1.5 G illumination, tripling the pristine photoanode's performance and nearly tripling water splitting efficiency. Mechanism revealing the improved photoelectrochemical performance is attributed to a greater band bending on the BiVO4 surface, enhancing hole injection dynamics. This work provides a feasible strategy for a deeper understanding of the intrinsic mechanisms of facet engineering and improving the activity of photoanodes.

A Drosophila-inspired intelligent olfactory biomimetic sensing system for gas recognition in complex environments

The olfactory sensory system of Drosophila has several advantages, including low power consumption, high rapidity and high accuracy. Here, we present a biomimetic intelligent olfactory sensing system based on the integration of an 18-channel microelectromechanical system (MEMS) sensor array (16 gas sensors, 1 humidity sensor and 1 temperature sensor), a complementary metal‒oxide‒semiconductor (CMOS) circuit and an olfactory lightweight machine-learning algorithm inspired by Drosophila. This system is an artificial version of the biological olfactory perception system with the capabilities of environmental sensing, multi-signal processing, and odor recognition. The olfactory data are processed and reconstructed by the combination of a shallow neural network and a residual neural network, with the aim to determine the noxious gas information in challenging environments such as high humidity scenarios and partially damaged sensor units. As a result, our electronic olfactory sensing system is capable of achieving comprehensive gas recognition by qualitatively identifying 7 types of gases with an accuracy of 98.5%, reducing the number of parameters and the difficulty of calculation, and quantitatively predicting each gas of 3–5 concentration gradients with an accuracy of 93.2%; thus, these results show superiority of our system in supporting alarm systems in emergency rescue scenarios.

Modeling and Analyzing of CMOS Cross-Coupled Differential-Drive Rectifier for Ultra-Low-Power Ambient RF Energy Harvesting

This paper models and analyzes the Complementary Metal Oxide Semiconductor (CMOS) cross-coupled differential-drive (CCDD) rectifier for Ultra-Low-Power ambient radio-frequency energy harvesters (RFEHs) working in the subthreshold region. In this paper, two closed-form equations of CCDD rectifier output voltage and input resistance in the subthreshold region were derived based on BSIM4 models of NMOS and PMOS. The model give insight to specify circuit parameters according to different inputs, transistor sizes, threshold voltages, numbers of stages, load conditions and compensation voltages, which can be used to optimize the rectifier circuit. There is a good agreement between the simulation results and these models, and these models have a maximum deviation of 10% in comparison with the simulation results in the subthreshold region. The measurement results of a single-stage CCDD rectifier reported in a previous paper were adopted to verify the model. The output voltage and input resistance predicted by these models provide excellent consistency with corresponding measurement results. The model can be employed to optimize the CCDD rectifier without expensive calculation in the design stage.

Impact of monolayer WS2 surface properties on the gate dielectrics formation by atomic layer deposition

Two-dimensional transition metal dichalcogenides (2D TMDs), such as MoS2 and WS2, have emerged as promising channel materials for future generation transistors. However, carbon-based surface contaminants pose a significant challenge in the formation of high-quality metal–oxide–semiconductor gate stacks for 2D TMDs. Carbon-based surface contaminants are known to be present even on directly grown 2D TMDs that have not been in contact with polymers. These organic contaminants affect precursor adsorption during atomic layer deposition (ALD) of gate dielectrics on 2D TMDs and as such the 2D-dielectric interface. This study examines the effectiveness of predeposition annealing in mitigating carbon-based contaminants while maintaining the integrity of a directly grown WS2 monolayer on a SiO2 substrate. We show that a WS2 monolayer on a SiO2/Si substrate remains stable during vacuum annealing at temperatures up to 400 °C. Water contact angle measurements and x-ray photoelectron spectroscopy confirm that the surface concentration of carbon starts to decrease at 150 °C. Thermal anneal improves the surface coverage of Al2O3 for both conventional chemisorption-based ALD and physisorbed-precursor-assisted ALD processes by facilitating more effective Al2O3 nucleation on the WS2 monolayer. The impact of predeposition anneal on the Al2O3 growth behavior in both processes can be explained by changes in surface contaminant levels. Our results underscore the importance of surface pretreatment in dielectric deposition on 2D TMDs and demonstrate that predeposition anneal is an effective method to enhance ALD-based dielectric deposition on directly grown 2D TMDs.

Analysis and Design of an SiC CMOS Three-Channel DC-DC Synchronous Buck Converter for High-Temperature Applications

In this study, we present the design, simulation, and implementation of a DC-DC synchronous buck converter utilizing IISB’s 2 μm 4H-silicon carbide (SiC) complementary metal–oxide–semiconductor (CMOS) technology. The converter is designed to meet the demands of modern integrated circuits, particularly in the field of integrated power management. The SiC technology offers enhanced performance and reliability at high temperatures, making it especially suitable for applications that operate in these conditions, including automotive systems, and aerospace, among others. The power transistors and gate drivers are fully integrated on-chip, optimizing efficiency and minimizing footprint. Additionally, the study contributes to the understanding of SiC technology and its application in integrated circuit design. Simulation results demonstrate a peak efficiency of 86.6% at 120 mA load current and 84.8% at 300 mA load current, showing the converter performance under different operating conditions. Furthermore, at high temperatures (295 °C), the converter achieves an efficiency of 89.6%, demonstrating its robustness and versatility in extreme environments. These findings contribute to the advancement of integrated circuit design and facilitate advancements in more efficient and robust power management solutions.

Ultrathin Copper Monosulfide Films for an Optically Semitransparent, Highly Selective Ammonia Chemosensor.

Transition-metal sulfides are emerging as promising materials for chemiresistive gas sensors─a field still dominated by semiconducting metal oxides. Despite the availability of materials with tunable electronic, optical, physical, and chemical properties, few studies have moved beyond synthesis to provide strategies for enhancing gas sensing performance through material modification. Here, we present a simple, scalable synthetic strategy for developing an optically semitransparent, flexible NH3 gas sensor with a highly uniform, ultrathin CuS (covellite) active sensing layer. The optical and chemical properties of the CuS were precisely controlled near the percolation threshold of thin-film formation by varying key experimental parameters such as the Cu film thickness (<10 nm) and the sulfurization time (∼90 s) under ambient conditions. Experimental and computational studies of CuS and its NH3 sensing characteristics identify key physicochemical properties. The controlled surface chemistry and morphology of the ultrathin CuS layer demonstrate its effectiveness in functional NH3 sensing devices, which achieve a calculated detection limit of 1.38 ppm for NH3 gas at 150 °C, along with exceptional mechanical robustness and optical semitransparency in the visible-light spectrum.