Metal-oxide-semiconductor Field-effect Transistors Research Articles

Application of a Scaled‐up Dielectric Barrier Discharge Reactor in the Trace Oxygen Removal in Hydrogen‐Rich Gas Mixtures at Ambient and Elevated Pressure

AbstractDielectric barrier discharges (DBDs) are frequently utilized in various gas conversion processes. For industrial applications a low flow resistance and scalability are crucial. In this study a tenfold scaled‐up reactor based on a surface dielectric barrier discharge (SDBD) was employed for the removal of oxygen traces from H2/N2/O2 gas mixtures. The conversion efficiency of the reactor with ten electrode configurations was investigated for different admixtures of O2, and high degrees of conversion were observed that decreased with increasing flow rate, but remained constant when raising the pressure to 2 bar(g). A new generator based on silicon carbide field‐effect transistors (SiC‐FETs) was used and compared to a generator based on classical metal oxide semiconductor field‐effect transistors (MOS‐FETs).

Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors

4H-SiC/SiO2 interface states play a major role in the performance and reliability of modern 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs). To gain new insights into these interface states, we developed a cryogenic measurement technique that uses photon-assisted electron depopulation to probe device performance limiting 4H-SiC/SiO2 interface states. This technique enables the characterization of shallow as well as deep states at the 4H-SiC/SiO2 interface of fully processed devices using a cryogenic probe station. Our method is performed on n-channel 4H-SiC MOSFET test structures with deposited oxide and postoxidation anneal. We identify conditions under which the electrons remain trapped at 4H-SiC/SiO2 interface states and trigger the controlled photon-assisted electron depopulation within a range of photon energies. This allows us to prove the presence of near interface traps, which have previously been found in thermally grown 4H-SiC MOS structures. Our results are supported by device simulations. Additionally, we study the impact of irradiation intensity and light exposure time on the photon-induced processes.

High-Performance WS2 MOSFETs with Bilayer WS2 Contacts.

WS2 is a promising transition-metal dichalcogenide (TMDC) for use as a channel material in extreme-scaled metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its monolayer thickness, high carrier mobility, and its potential for symmetric n-type and p-type MOSFET performance. However, the formation of stable, low-barrier-height contacts to monolayer TMDCs continues to be a challenge. This study introduces an innovative approach to realize high-performance WS2 MOSFETs by utilizing bilayer WS2 (2L-WS2) in the contact region grown through a two-step chemical vapor deposition process. The 2L-WS2 devices demonstrate a high I ON/I OFF ratio of 108 and a saturated drain current, I D(SAT), of 280 μA/μm (386 μA/μm) at room temperature (78 K), even while still using conventional metal (Pd or Ni) contacts. Devices featuring a 1L-WS2 channel and 2L-WS2 in the contact regions were also fabricated, and they exhibited performance comparable to that of 2L-WS2 devices. The devices also exhibit good stability with nearly identical performance after storage over a 13 month period. The study highlights the benefits of a hybrid channel thickness approach for TMDC transistors.

Sn99Ag0.3Cu0.7–TiO2 composite solder joints and their influence on thermal parameters of power components

PurposeThis paper aims to investigate the influence of composite solder joint preparation on the thermal properties of metal-oxide-semiconductor field-effect transistors (MOSFETs) and the mechanical strength of the soldered joint.Design/methodology/approachReinforced composite solder joints with the addition of titanium oxide nanopowder (TiO2) were prepared. The reference alloy was Sn99Ag0.3Cu0.7. Reinforced joints differed in the weight percentage of TiO2, ranging from 0.125 to 1.0 Wt.%. Two types of components were used for the tests. The resistor in the 0805 package was used for mechanical strength tests, where the component was soldered to the FR4 substrate. For thermal parameters measurements, a power element MOSFET in a TO-263 package was used, which was soldered to a metal core printed circuit board (PCB) substrate. Components were soldered in batch IR oven.FindingsShear tests showed that the addition of titanium oxide does not significantly increase the resistance of the solder joint to mechanical damage. Titanium oxide addition was shown to not considerably influence the soldered joint’s mechanical strength compared to reference samples when soldered in batch ovens. Thermal resistance Rthj-a of MOSFETs depends on TiO2 concentration in the composite solder joint reaching the minimum Rthj at 0.25 Wt.% of TiO2.Research limitations/implicationsMechanical strength: TiO2 reinforcement shows minimal impact on mechanical strength, suggesting altered liquidus temperature and microstructure, requiring further investigation. Thermal performance: thermal parameters vary with TiO2 concentration, with optimal performance at 0.25 Wt.%. Experimental validation is crucial for practical application. Experimental confirmation: validation of optimal concentrations is essential for accurate assessment and real-world application. Soldering method influence: batch oven soldering may affect mechanical strength, necessitating exploration of alternative methods. Thermal vs mechanical enhancement: while TiO2 does not notably enhance mechanical strength, it improves thermal properties, highlighting the need for balanced design in power semiconductor assembly.Practical implicationsIncorporating TiO2 enhances thermal properties in power semiconductor assembly. Optimal concentration balancing thermal performance and mechanical strength must be determined experimentally. Batch oven soldering may influence mechanical strength, requiring evaluation of alternative techniques. TiO2 composite solder joints offer promise in power electronics for efficient heat dissipation. Microstructural analysis can optimize solder joint design and performance. Rigorous quality control during soldering ensures consistent thermal performance and mitigates negative effects on mechanical strength.Social implicationsThe integration of TiO2 reinforcement in solder joints impacts thermal properties crucial for power semiconductor assembly. However, its influence on mechanical strength is limited, potentially affecting product reliability. Understanding these effects necessitates collaborative efforts between researchers and industry stakeholders to develop robust soldering techniques. Ensuring optimal TiO2 concentration through experimental validation is essential to maintain product integrity and safety standards. Additionally, dissemination of research findings and best practices can empower manufacturers to make informed decisions, fostering innovation and sustainability in electronic manufacturing processes. Ultimately, addressing these social implications promotes technological advancement while prioritizing consumer trust and product quality in the electronics industry.Originality/valueThe research shows the importance of the soldering technology used to assemble MOSFET devices.

The Creation and Utilization of Transistors

The transistor is a crucial component in modern electronics, enabling the miniaturization and improvement of electronic systems. Its invention in 1947 by John Bardeen, Walter Brattain, and William Shockley at Bell Labs marked a revolutionary breakthrough in electronic technology. The transistor's compact, energy- efficient, and reliable nature allowed for the development of smaller, faster, and more reliable electronic devices. Since its inception, the transistor has undergone numerous innovations and advancements, evolving from the original point-contact transistor to the highly efficient and compact field-effect transistors (FETs) and metal- oxide-semiconductor field-effect transistors (MOSFETs) used today. These advancements have facilitated the development of increasingly complex and powerful electronic systems, including computers, smartphones, and the vast networks that form the backbone of the internet. The ongoing research and development in transistor technology continues to push the boundaries of what is possible, driving progress in fields ranging from computing and telecommunications to healthcare and renewable energy. The transistor's significance cannot be overstated; it is a cornerstone of modern technology and a key driver of innovation and economic growth.

Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs

AbstractSeries connection of Silicon Carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) is an interesting solution to design switches for voltages that are not yet commercially available or limited for single‐die devices. However, inherent static and dynamic voltage balancing must be achieved. Voltage imbalance is caused by the device parameters spread, whose impact is pronounced in low‐inductive circuit layouts. This study investigates the optimal design and tuning limits of resistor‐capacitor (RC)‐snubber circuits and non‐adaptive, standard, voltage‐source gate drivers for achieving the best balancing in transient and steady‐state voltage distributions among series‐connected discrete SiC MOSFETs operating at speeds up to . It has been shown that a larger parameter mismatch will lead to uneven switching energy losses and larger voltage imbalances. It was also experimentally shown that increasing the gate resistor to slow down the devices will not always improve balancing when their parameter spread is large. Thus, tuning recommendations for the RC‐snubber circuit and gate driver were developed based on these findings.

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

AbstractIn recent years, silicon‐based room temperature Terahertz (THz) detectors have become the most optimistic research area because of their high speed, low cost, and unimpeded compatibility with mainstream complementary metal‐oxide‐semiconductor (CMOS) device technologies. However, Silicon (Si) suffers from low responsivity and high noise at THz frequencies. In this review, the recent advances in Si‐based THz detectors using silicon‐on‐insulator (SOI) substrates are presented. These offer several advantages over bulk counterparts, such as reduced parasitic capacitance, enhanced electric field confinement, and improved thermal isolation. The different types of THz detectors exploiting SOI substrate, such as conventional metal‐oxide‐semiconductor field effect transistors (MOSFETs), junction‐less MOSFETs, junction‐less nanowires field effect transistors (JLNWFETs), micro‐electromechanical system (MEMS), metal‐semiconductor‐metal (MSM) structures, and single electron transistor (SET), are discussed, and their key performances in terms of responsivity, noise equivalent power (NEP), bandwidth, and dynamic range are compared. The challenges and opportunities for further improvement of SOI THz detectors, such as device scaling, integration, and modulation, are also highlighted. This review may offer compelling evidence supporting the idea that SOI THz detectors have the potential to facilitate high performance, low power consumption, and scalability—qualities essential for advancing next‐level technologies.

Multi-objective topology optimization design of silicon carbide metal oxide semiconductor field effect transistors power module liquid-cooled heatsink for electric vehicles

Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) is gradually replacing silicon-based insulated gate bipolar transistor (IGBT) as the switching devices in electric vehicle power inverters due to its higher operating temperatures, switching speeds, and frequencyies. However, the high switching frequency of SiC MOSFETs can increase the losses of the power inverter, resulting in an increase in the temperature, which will limit the performance of power inverters. The improvement of power module performance is mainly controlled by optimizing its control methods during operation and improving its cooling system. Currently, the liquid-cooled heatsink used in power modules have disadvantages such as large flow resistance and poor heat dissipation performance. In order to enhance the performance of the heatsink, this study first established a three-dimensional finite element model of SiC MOSFETs power module based on a pin fin heatsink. The accuracy of the model was verified by numerical and experimental methods. Secondly, based on numerical analysis, a multi-objective topology optimization method for the power module liquid-cooled heatsink is proposed. This method takes heat exchange and fluid dissipation energy as the objective function and uses weight factors to adjust the influence of each on the objective functions. Additionally, the temperature distribution of the heatsink is considered to optimize its performance. Finally, the numerical results show that the topology-optimized heatsink exhibits better performance at high coolant volumetric flow rates. When the coolant volumetric flow rate is 14 L/min, the pressure drops of topology-optimized heatsink is reduced by 63.94 % and the junction temperature of the power module is reduced by 0.24 % compared with the pin fin heatsink. This topologically optimized heatsink could be helpful to improve the performance of existing power module heatsinks.

Impact of NaOH solution surface treatment on Al2O3/β-Ga2O3 MOS capacitors

A suitable semiconductor surface treatment could improve the gate dielectric quality and reduce the interface states and traps to enhance the performance of metal–oxide semiconductor capacitors (MOSCAPs). In this paper, β-Ga2O3 surface treatment using NaOH solution prior to atomic layer deposition of Al2O3 was investigated. In comparison with piranha pretreatment, MOSCAPs with NaOH solution surface pretreatment show a larger maximum accumulation capacitance with less frequency dispersion, reduced charges/traps and interface state density D it. The improvement in MOSCAPs performance could be attributed to the NaOH solution pretreatment induced slight surface etching effect and relatively effective hydroxylation surface. These results suggest that the process optimization of NaOH solution surface pretreatment could lead to further improvement of β-Ga2O3 MOSCAPs and have a potential in application of β-Ga2O3 metal–oxide semiconductor field-effect transistors in the future.

Review of Carbon Nanotube Field Effect Transistor for Nanoscale Regime

Background: The need for high performance, small size, low delay, low power consumption, and long battery backup of portable systems is increasing with the advancement of technology. Many features of portable systems can be improved using scaling methods. In the scaling process, reducing the size of devices causes serious difficulties, including the short channel effect (SCE) and leakage current, which degenerates the characteristics of the systems. Objective: In this review paper, a trending carbon nanotube field effect transistor (CNTFET) technology is discussed in detail. CNTFET can replace the conventional metal oxide semiconductor field effect transistor (MOSFET) technology to overcome the SCE problems in the nanoscale regime and also meet the requirements of portable systems. Methods: The CNTFET is an extremely good nanoscale technology due to its one-dimension band structure, high transconductance, high electron mobility, superior control over channel formation, and better threshold voltage. This technology is used to construct high-performance and low-power circuits by replacing the MOSFET technology. CNTFET in comparison to MOSFET takes the carbon nanotube (CNT) as a channel region. Results: The value of threshold voltage in CNTFET changes with the diameter of CNT. The threshold voltage of the devices controls many parameters at the circuit-level design. Hence, the detailed operation and the characteristics of CNTFET devices are presented in this review paper. The existing CNTFET-based ternary full adder (TFA) circuits are also described in this review paper for the performance evaluation of different parameters. Conclusion: CNTFET technology is the possible solution for the SCE in the nanoscale regime and is capable to design efficient logic circuits. The circuits using the CNTFET technology can provide better performance and various advantages, including fast speed, small area, and low power consumption, in comparison to the MOSFET circuits. Thus, CNTFET technology is the best choice for circuit designs at the nanoscale.

Advantages, manufacturing processes and challenges of FinFET technology

Abstract As an emerging cutting-edge integrated circuit technology, Fin Field Effect Transistor (FinFET) has not only successfully broken through the limitations of the 22nm node since its development in 1998, but it still maintains considerable vitality and is developing into smaller sizes. As an improvement over traditional MOSFET technology, FinFET offers many technical advantages, which practically solve the challenges encountered by traditional MOSFET. The FinFET process technology is incompatible with planar MOSFET process technology. Moreover, since the development of Finfet technology, there have been many technical challenges. The first half of this article mainly introduces the differences and advantages between FinFET and traditional Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), and briefly outlines its manufacturing process. The second half explains the challenges and hopes on the development path of FinFET technology. I believe this article can provide a reference for integrated circuit designers when understanding FinFET technology, and provide guidance and reference for beginners.

Design and simulation of artificial retinal stimulation IC with switched capacitor using Si nanowire optical properties.

This study introduces an approach for converting the current from a sensor into controllable voltage. To this end, a switched-capacitor structure was integrated to provide efficient current-to-voltage conversion. The generated voltage was further regulated by an operational amplifier current source, enhancing stability and precision. An n-type metal oxide semiconductor field-effect transistor structure under an H-bridge was integrated into the system to achieve fine-tuned control over current stimulation. This component contributed to voltage regulation and enabled bi-directional control of current flow, offering versatility in adjusting current amplitudes using working and counter electrodes. This dynamic control mechanism was pivotal for effectively controlling the intensity of current stimulation. We applied Verilog-A modeling to simulate the optical characteristics of Si nanowires. The proposed system efficiently converted sensor-derived current into voltage using a switched-capacitor structure. Simultaneously, the precision was enhanced via operational amplifier regulation and n-type metal-oxide-semiconductor field-effect transistor-based H-bridge control. The simulation showed a current stimulus amplitude ranging from 2 to 13 μA for a variable photocurrent of Si nanowires (Rex: 10 kΩ, pulse: 100 Hz, 1 ms). The ability to finely control current stimulation intensity holds promise for diverse applications requiring accurate and adjustable current manipulation. This study contributes to the growing field of sensor technology by offering a unique perspective on the integration of nanostructures and electronic components for an enhanced control and functionality.

A comparative study on ReLU Implementation using TMDFETs

In this study, we compare the implementation of the rectified linear (ReLU) activation function using transition metal dichalcogenide field-effect transistors (TMDFETs) and metal-oxide-semiconductor FETs (MOSFETs). Five TMDs - MoS 2, MoSe 2, MoTe 2, WS 2, WSe 2 along with three variants (low-power, high-performance, and multi-gate) of the MOSFETs are simulated. Three ReLU circuits utilizing these FETs are employed for the comparison. The power consumption, speed, and accuracy of the ReLU implementation are measured and compared for each circuit and each FET. Our simulation results show that the MOSFETs consume much less power than the TMDFETs and deliver more accurate ReLU functionality. However, the TMDFETs are much faster than the MOSFETs. Among the TMDFETs, the WS 2 FET stands out, as it has higher accuracy, consumes the least power and its power consumption is comparable to the MOSFETs. Additionally, WS 2 is faster compared to MOSFETs, resulting in a trade-off between power efficiency and speed. This makes WS 2 an attractive option for implementing the ReLU activation function.

Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor

A germanium p-channel Schottky barrier metal–oxide–semiconductor field-effect transistor (SB-MOSFET) with germanium–platinum Schottky contacts is demonstrated experimentally. The fabrication process has a low thermal budget of 450° C and requires neither intentional doping nor ion implantation. At a temperature of 4 K, the p-channel SB-MOSFET turns on at a gate voltage of −1.6 V and shows a peak mobility of 500 cm2/V s at a carrier density of 3 × 1012 cm–2. Under high drain–source bias voltages, the device operates in an unconventional mode where the current is limited by the source contact. Injection of carriers from the source contact to the germanium channel is controlled by the gate bias, which modulates the Schottky barrier capacitively. The transconductance in this mode deviates from and is significantly higher than the value expected for a conventional MOSFET with the same geometry, mobility, and capacitance. Based on four-point current–voltage measurements, we present a theoretical band diagram of the device and give a physical picture for the observed high currents and transconductances.

Integrated electronic system for FET biosensor assessment based on current-voltage curve tracing

Field-effect transistor (FET) biosensors are pivotal in diverse applications, from environmental monitoring to healthcare diagnostics. Current-voltage (I-V) curve tracing is a powerful method for evaluating FET biosensor behavior, enabling comprehensive analysis of their FET biosensor characteristics. Traditional I-V curve tracing methods often require complex and expensive equipment, limiting their accessibility and practicality for routine sensor assessment. This study aims to develop and demonstrate an integrated electronic system for assessing FET biosensors using I-V curve tracing. The integrated electronic system uses readily available components, including microcontrollers, analog circuitry, and user-friendly software. We developed a compact, low-cost device that generates I-V curves for the FET biosensor. The integrated electronic system successfully generated I-V curves for various FET biosensors. The system demonstrated consistent, reliable performance, portability, and ease of use, making it a practical solution for routine sensor assessment. The average error in measurements using bipolar junction transistors (BJT) and metal-oxide-semiconductor field-effect transistors (MOSFETs) results in 2.62%, and measurements at different pH levels have a sensitivity of 21.6 mV/pH and a linearity of 0.9892. This innovation contributes to the advancement of FET biosensor technology. In the future, the developments should focus on ensuring their accuracy and reliability in various sensor fields.

Fabrication of lateral diamond MOSFET with buried pn-junctions by diamond surface planarization based on carbon solid solution into nickel

New fabrication processes for buried p+-type diamond using etching techniques based on the solid-solution reaction of carbon with nickel were proposed and demonstrated. Specifically, an inversion-channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with source and drain regions buried in the body were fabricated, and their operation were confirmed. An etching process using etching techniques based on the solid-solution reaction of carbon with nickel was applied to realize trench formation and planarization after the growth of a p+-type diamond. The fabricated MOSFET exhibited drain current density equivalent to that of conventional MOSFET with source and drain p+-type regions deposited as islands on an n-type body, and ideal field-effect transistor characteristics with linear and saturation regions, and the drain current density was controlled by the gate voltage. However, the surface protrusion structure owing to the incomplete planarization process limited the device characteristics. The proposed fabrication processes for buried layers are expected to function as an important selective doping technique for diamond electronic devices such as ion implantation.

Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study.

Since its invention in the 1960s, one of the most significant evolutions of metal-oxide semiconductor field effect transistors (MOSFETs) would be the 3D version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During recent decades, the width of fin (Wfin) and the neighboring gate oxide width (tox) in FinFETs has shrunk from about 150 nm to a few nanometers. However, both widths seem to have been leveling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting the Penn model and Maxwell-Garnett mixing formula for a dielectric constant (κ) calculation for nanolaminate structures, FinFETs with two- and three-stage κ-graded stacked combinations of gate dielectrics with SiO2, Si3N4, Al2O3, HfO2, La2O3, and TiO2 perform better against the same structures with their single-layer dielectrics counterparts. Based on this, FinFETs simulated with κ-graded gate oxides achieved an off-state drain current (IOFF) reduced down to 6.45 × 10-15 A for the Al2O3: TiO2 combination and a gate leakage current (IG) reaching down to 2.04 × 10-11 A for the Al2O3: HfO2: La2O3 combination. While our findings push the individual dielectric laminates to the sub 1 nm limit, the effects of dielectric permittivity matching and κ-grading for gate oxides remain to have the potential to shed light on the next generation of nanoelectronics for higher integration and lower power consumption opportunities.

Anisotropic stress observation of 4H‐SiC trench metal‐oxide semiconductor field‐effect transistor test structures by scanning near‐field optical Raman microscope

AbstractWe prepared two types of trench‐test metal‐oxide semiconductor field‐effect transistor (MOSFET) structures on m‐ and a‐faces in 4H silicon carbide (4H‐SiC) and investigated the anisotropic stress distribution of small trenches with a depth of 1 μm using a scanning near‐field optical Raman microscope (SNOM) that we developed. The stress distributions of σ11 (a‐axis) under the bottom of the trench for m‐face were approximately 100 MPa larger than those for a‐face, and the stress distributions of σ33 (c‐axis) under the bottom of the trench for m‐face were almost the same as those for a‐face. The experimental result agrees well with that calculated by the finite element method (FEM). These results indicate that the anisotropic stress distributions of σ11 components around the apex of the trenches of 4H‐SiC trench‐test MOSFET occur in m‐ and a‐faces. Thus, it is possible that the differences in mobilities for m‐ and a‐faces might be caused by the anisotropic stresses.

Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques

In this article, a novel high-k and equivalent variable lateral doping 4H-SiC lateral double-diffused metal oxide semiconductor (LDMOS) field-effect transistor with improved performance is proposed and calibrated by numerical simulation. The three-dimensional equivalently P-top region is employed in the drift region, and only one additional ion implantation step is needed to achieve variable lateral doping (VLD) technique. The VLD technique combined with the high-k dielectric in the drift region, not only increases the doping concentration of N-drift region, but also optimizes the electric field distribution in the drift region. Simulation results indicates that the BV, specific on-resistance and the short-circuit withstand time of the proposed Hk VLD LDMOS are improved by 48.91%, 53.6% and 60.2% respectively, compared with those of the conventional LDMOS device.

Spin coating high‐k multicomponent (Al,Ti,V,Zr,Hf)Ox films with sub‐nm EOT for MOS‐based electronic devices

AbstractThe facile spin coating fabrication of high‐dielectric‐constant (high‐k) multicomponent (Al,Ti,V,Zr,Hf)Ox films with an equivalent oxide thickness of ≈0.95 nm and the investigation of their thermal stability and dielectric and electrical properties of the resulting advanced metal–oxide–semiconductor (MOS)‐based electronic devices are reported in this study. Various heating conditions, including drying following spin coating, annealing after drying, and forming gas annealing, were investigated to optimize the quality of the films and reduce film defects. The favorable film‐based MOS devices exhibited robust capacitance–voltage (C–V) and current–voltage (I–V) characteristics with a remarkable k value of approximately 62 at 1 kHz. The thermal stability of the films was affirmed through a rapid thermal annealing treatment at 900°C for 5 s and observation of nondegraded C–V and I–V curves. The electrical performance of the resulting MOS field‐effect transistors (MOSFETs), including a threshold voltage of 0.4 V, an on/off ratio of 106, a saturated mobility of 40.1 cm2 V−1 s−1, and a subthreshold swing of 66.7 mV dec−1, was obtained. Moreover, hole‐ and electron‐trapping measurements through negative and positive gate bias stress instabilities, respectively, indicate the reliable performance of our MOSFETs. Our results imply that solution‐based processes are promising for fabricating fundamental semiconductor devices.