Metal Oxide Semiconductor Field Effect Transistor Dosimeters Research Articles

Assessment of the effective dose in supine, prone, and oblique positions in the maxillofacial region using a novel combined extremity and maxillofacial cone beam computed tomography scanner.

The objectives of this study were to assess the organ and effective doses (International Commission on Radiological Protection [ICRP] 103 standard) resulting from supine, prone, and oblique phantom positions in the maxillofacial region using a novel cone beam computed tomography (CBCT) device and to compare the results with conventional dental CBCT and multislice computed tomography (MSCT) devices. Measurements were performed using an anthropomorphic RANDO head phantom (Radiation Analogue Dosimetry System) with 20 MOSFET (metal-oxide-semiconductor field-effect transistor) dosimeters placed in the most radiosensitive maxillofacial organs. Effective doses were measured in 3 phantom positions using a combined extremity and maxillofacial CBCT device: the Planmed Verity CBCT scanner. Reference values were measured in the upright position with 2 CBCT devices and in the prone position with one MSCT scanner. The Planmed Verity CBCT scanner effective doses were 247 μSv in supine, 192 μSv in prone, and 134 μSv in oblique position. The effective dose with ProMax 3D MAX CBCT was 168 μSv; with i-CAT Next Generation, 170 μSv; and with Philips Brilliance 64 MSCT, 781 μSv. Head positioning has an important effect on the organ and effective doses. The Planmed Verity CBCT scanner effective dose results were comparable with those attained on 2 conventional CBCT devices and were considerably lower than the MSCT scanner results.

Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry.

To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters for in vivo intensity modulated radiation therapy (IMRT) dosimetry. Several MOSFETs were irradiated at d(max) using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

Direct and pulsed current annealing of p-MOSFET based dosimeter: the “MOSkin”

Contemporary radiation therapy (RT) is complicated and requires sophisticated real-time quality assurance (QA). While 3D real-time dosimetry is most preferable in RT, it is currently not fully realised. A small, easy to use and inexpensive point dosimeter with real-time and in vivo capabilities is an option for routine QA. Such a dosimeter is essential for skin, in vivo or interface dosimetry in phantoms for treatment plan verification. The metal-oxide-semiconductor-field-effect-transistor (MOSFET) detector is one of the best choices for these purposes, however, the MOSFETs sensitivity and its signal stability degrade after essential irradiation which limits its lifespan. The accumulation of positive charge on the gate oxide and the creation of interface traps near the silicon-silicon dioxide layer is the primary physical phenomena responsible for this degradation. The aim of this study is to investigate MOSFET dosimeter recovery using two proposed annealing techniques: direct current (DC) and pulsed current (PC), both based on hot charged carrier injection into the gate oxide of the p-MOSFET dosimeter. The investigated MOSFETs were reused multiple times using an irradiation-annealing cycle. The effect of the current-annealing parameters was investigated for the dosimetric characteristics of the recovered MOSFET dosimeters such as linearity, sensitivity and initial threshold voltage. Both annealing techniques demonstrated excellent results in terms of maintaining a stable response, linearity and sensitivity of the MOSFET dosimeter. However, PC annealing is more preferable than DC annealing as it offers better dose response linearity of the reused MOSFET and has a very short annealing time.

Characterization of MOSFET dosimeter angular dependence in three rotational axes measured free-in-air and in soft-tissue equivalent material

When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity dependence of MOSFET dosimeters in three rotational axes measured free-in-air and in soft-tissue equivalent material using dental photon energy. Free-in-air dose measurements were performed with three MOSFET dosimeters attached to a carbon fibre holder. Soft tissue measurements were performed with three MOSFET dosimeters placed in a polymethylmethacrylate (PMMA) phantom. All measurements were made in the isocenter of a dental cone-beam computed tomography (CBCT) scanner using 5º angular increments in the three rotational axes: axial, normal-to-axial and tangent-to-axial. The measurements were referenced to a RADCAL 1015 dosimeter. The angular sensitivity free-in-air (1 SD) was 3.7 ± 0.5 mV/mGy for axial, 3.8 ± 0.6 mV/mGy for normal-to-axial and 3.6 ± 0.6 mV/mGy for tangent-to-axial rotation. The angular sensitivity in the PMMA phantom was 3.1 ± 0.1 mV/mGy for axial, 3.3 ± 0.2 mV/mGy for normal-to-axial and 3.4 ± 0.2 mV/mGy for tangent-to-axial rotation. The angular sensitivity variations are considerably smaller in PMMA due to the smoothing effect of the scattered radiation. The largest decreases from the isotropic response were observed free-in-air at 90° (distal tip) and 270° (wire base) in the normal-to-axial and tangent-to-axial rotations, respectively. MOSFET dosimeters provide us with a versatile dosimetric method for dental radiology. However, due to the observed variation in angular sensitivity, MOSFET dosimeters should always be calibrated in the actual clinical settings for the beam geometry and angular range of the CBCT exposure.

Commissioning and implementation of an implantable dosimeter for radiation therapy

In this article we describe commissioning and implementation procedures for the Dose Verification System (DVS) with permanently implanted in vivo wireless, telemetric radiation dosimeters for absolute dose measurements. The dosimeter uses a semiconductor device called a metal–oxide semiconductor field‐effect transistor (MOSFET) to measure radiation dose. A MOSFET is a transistor that is generally used for amplifying or switching electronic signals. The implantable dosimeter was implemented with the goal of verifying the dose delivered to radiation therapy patients. For the purpose of acceptance testing, commissioning, and clinical implementation and to evaluate characteristics of the dosimeter, the following tests were performed: 1) temperature dependence, 2) reproducibility, 3) field size dependence, 4) postirradiation signal drift, 5) dependence on average dose rate, 6) linearity test, 7) angular dependence (different gantry angle position), 8) angular dependence (different DVS angle position), 9) dose rate dependence, 10) irradiation depth dependence, 11) effect of cone‐beam exposure to the dosimeter, and 12) multiple reading effect. The dosimeter is not currently calibrated for use in the kV range; nonetheless, the effect of the cone‐beam procedure on the MOSFET dosimeter was investigated. Phantom studies were performed in both air and water using an Elekta Synergy S Beam‐Modulator linear accelerator. Commissioning and clinical implementation for prostate cancer patients receiving external‐beam radiation therapy were performed in compliance with the general recommendations given for in vivo dosimetry devices. The reproducibility test in water at human body temperature (37°C) showed a 1.4% absolute difference, with a standard deviation of 5.72 cGy (i.e., SD=2.9%). The constancy test shows that the average readings at room temperature were 3% lower compared to the readings at human body temperature, with a SD=2%. Measurements were not dependent upon field size. Due to postirradiation signal drift, the following corrections are suggested: −2.8%, −2%, 0.5%, and 2.5% for the readings taken after 0.5, 1, 5, or 10 min, respectively. Different gantry angles did not influence the readings. The maximum error was less than 1% with a maximum SD=3.61cGy (1.8%) for the gantry angle of 45°. However, readings are dependent on the dosimeter orientation. The average dose reading was 7.89 cGy (SD=1.46cGy) when CBCT imaging was used for the pelvis protocol, and when postirradiation measurement was taken at 2.5 min (expected 2–3 cGy). The clinical implementation of the implantable MOSFET dosimeters for prostate cancer radiation therapy is described. Measurements performed for commissioning show that the dosimeter, if used within specifications, provides sufficient accuracy for its intended use in clinical procedures. The postradiation signal drift, temperature dependence, variation of reproducibility, and rotational isotropy could be encountered if the dosimeter is used outside the manufacturer's specifications. The dosimeter can be used as a tool for quantifying dose at depth, as well as to evaluate adherence between planned doses and the delivered doses. Currently, the system is clinically implemented with ±7% tolerance.PACS numbers: 87.53.‐j; 87.55.‐x

Surface dose measurements from air gaps under a bolus by using a MOSFET dosimeter in clinical oblique photon beams

This study is intended to investigate the effects of surface dose from air gaps under the bolus in clinically used oblique photon beams by using a Markus parallel-plate chamber and a metal-oxide semiconductor field-effect transistor (MOSFET) dosimeter. To evaluate the performances of the two detectors, the percentage surface doses of the MOSFET dosimeters in without an air gap under the bolus material were measured and compared with those of the Markus parallel-plate chamber. MOSFET dosimeters at the surface provided results mostly in good agreement with the parallelplate chamber. The MOSFET dosimeters seemed suitable for surface dose measurements having excellent accuracy for clinical used photon beams. The relative surface doses were measured with air gaps (2, 5, 10 mm) and without an air gap under 3 different bolus setups: (1) unbolused (no bolus), (2) 5-mm bolus, and (3) 10-mm bolus. The reductions in the surface dose substantially increased with small field size, thick bolus, and large air gap. The absolute difference in the reductions of the surface dose between the MOSFET dosimeter and the Markus parallel-plate chamber was less than 1.1%. Results at oblique angles of incidence showed larger reductions in surface dose with increasing angle of incidence. The largest reduction in surface dose was recorded for a 6 × 6 cm2 field at a 60° angle of incidence with an 10-mm air gap under a 10-mm bolus. When a 10-mm bolus was used, a reduction in the surface dose with an air gap of up to 10.5% could be achieved by varying the field size and the incident angle. Therefore, air gaps under the bolus should be avoided in radiotherapy treatment, especially for photon beam with highly oblique angles of incidence.

Assessment of radiation exposure in dental cone-beam computerized tomography with the use of metal-oxide semiconductor field-effect transistor (MOSFET) dosimeters and Monte Carlo simulations

The aims of this study were to assess the organ and effective dose (International Commission on Radiological Protection (ICRP) 103) resulting from dental cone-beam computerized tomography (CBCT) imaging using a novel metal-oxide semiconductor field-effect transistor (MOSFET) dosimeter device, and to assess the reliability of the MOSFET measurements by comparing the results with Monte Carlo PCXMC simulations. Organ dose measurements were performed using 20 MOSFET dosimeters that were embedded in the 8 most radiosensitive organs in the maxillofacial and neck area. The dose-area product (DAP) values attained from CBCT scans were used for PCXMC simulations. The acquired MOSFET doses were then compared with the Monte Carlo simulations. The effective dose measurements using MOSFET dosimeters yielded, using 0.5-cm steps, a value of 153 μSv and the PCXMC simulations resulted in a value of 136 μSv. The MOSFET dosimeters placed in a head phantom gave results similar to Monte Carlo simulations. Minor vertical changes in the positioning of the phantom had a substantial affect on the overall effective dose. Therefore, the MOSFET dosimeters constitute a feasible method for dose assessment of CBCT units in the maxillofacial region.

Dose verification to cochlea during gamma knife radiosurgery of acoustic schwannoma using MOSFET dosimeter

Dose verification to cochlea using metal oxide semiconductor field effect transistor (MOSFET) dosimeter using a specially designed multi slice head and neck phantom during the treatment of acoustic schwannoma by Gamma Knife radiosurgery unit. A multi slice polystyrene head phantom was designed and fabricated for measurement of dose to cochlea during the treatment of the acoustic schwannoma. The phantom has provision to position the MOSFET dosimeters at the desired location precisely. MOSFET dosimeters of 0.2 mm x 0.2 mm x 0.5 μm were used to measure the dose to the cochlea. CT scans of the phantom with MOSFETs in situ were taken along with Leksell frame. The treatment plans of five patients treated earlier for acoustic schwannoma were transferred to the phantom. Dose and coordinates of maximum dose point inside the cochlea were derived. The phantom along with the MOSFET dosimeters was irradiated to deliver the planned treatment and dose received by cochlea were measured. The treatment planning system (TPS) estimated and measured dose to the cochlea were in the range of 7.4 - 8.4 Gy and 7.1 - 8 Gy, respectively. The maximum variation between TPS calculated and measured dose to cochlea was 5%. The measured dose values were found in good agreement with the dose values calculated using the TPS. The MOSFET dosimeter can be a suitable choice for routine dose verification in the Gamma Knife radiosurgery.

In vivo measurement of radiation dose during radiotherapy in breast cancer patients using MOSFET dosimeter

Objective The purpose of the study was to observe and analysis the actual dosage of patients with breast cancer using metal oxide semiconductor field effect transistor (MOSFET) detector.Methods First, Phantom measurements were performed to investigate dose distribution in the area of the junction in a half-field matching method and the influence of factors related to the accelerator. In vivo dose measurements were performed for patients with breast cancer to investigate the skin dose and the junction of supraclavicular-axillary field and tangential field in 6 MV X-ray beams. Results Phantom measurements showed that the relative deviation in the junction were within + 3％, and the dose distributions in the junction area depended on the matching field direction (x or y). In vivo measurement of tangential region for patients showed that, the maximum dose deviation between measurement and calculation was -30. 39％,the minimum deviation was - 18. 85％, the average dose deviation was -24. 76％. The dose deviation of tangential fields for patients with breast-conserving surgery was larger than that patients with radical surgery (t =2. 40 ,P＜0. 05), while dose deviation of supraclavicular-axillary fields was not significantly different. The average values of 15 fraction in the junction area showed more stable than one individual measurement.Conclusions It is important to real-time, in vivo measurement of radiation dose during radiotherapy in patients with breast cancer, and change treatment plan in time, to ensure the accuracy of target dose. Key words: Metal oxide semiconductor field effect transistor detector; Dosimetry; Adjacent half-fields; Phantom; Breast neoplasm

Investigations of interference between electromagnetic transponders and wireless MOSFET dosimeters: A phantom study

To evaluate both the Calypso Systems' (Calypso Medical Technologies, Inc., Seattle, WA) localization accuracy in the presence of wireless metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters of dose verification system (DVS, Sicel Technologies, Inc., Morrisville, NC) and the dosimeters' reading accuracy in the presence of wireless electromagnetic transponders inside a phantom. A custom-made, solid-water phantom was fabricated with space for transponders and dosimeters. Two inserts were machined with positioning grooves precisely matching the dimensions of the transponders and dosimeters and were arranged in orthogonal and parallel orientations, respectively. To test the transponder localization accuracy with/without presence of dosimeters (hypothesis 1), multivariate analyses were performed on transponder-derived localization data with and without dosimeters at each preset distance to detect statistically significant localization differences between the control and test sets. To test dosimeter dose-reading accuracy with/without presence of transponders (hypothesis 2), an approach of alternating the transponder presence in seven identical fraction dose (100 cGy) deliveries and measurements was implemented. Two-way analysis of variance was performed to examine statistically significant dose-reading differences between the two groups and the different fractions. A relative-dose analysis method was also used to evaluate transponder impact on dose-reading accuracy after dose-fading effect was removed by a second-order polynomial fit. Multivariate analysis indicated that hypothesis 1 was false; there was a statistically significant difference between the localization data from the control and test sets. However, the upper and lower bounds of the 95% confidence intervals of the localized positional differences between the control and test sets were less than 0.1 mm, which was significantly smaller than the minimum clinical localization resolution of 0.5 mm. For hypothesis 2, analysis of variance indicated that there was no statistically significant difference between the dosimeter readings with and without the presence of transponders. Both orthogonal and parallel configurations had difference of polynomial-fit dose to measured dose values within 1.75%. The phantom study indicated that the Calypso System's localization accuracy was not affected clinically due to the presence of DVS wireless MOSFET dosimeters and the dosimeter-measured doses were not affected by the presence of transponders. Thus, the same patients could be implanted with both transponders and dosimeters to benefit from improved accuracy of radiotherapy treatments offered by conjunctional use of the two systems.

Influence of structural defects on thermostability and radiation sensitivity of Si MOSFET dosimeters

The metal oxide semiconductor field effect transistor (MOSFET) dosimeters have recently become commercially available. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices, and circuits has been a major theme of many articles. The purpose of this study was to investigate the influence of structural defects on thermostability and radiation sensitivity of Si MOSFET dosimeters. It was shown that the near-surface layers of silicon have a complex defective structure which consists from the disordered layer of silicon and the layer of dislocation networks. Grain boundaries of disordered layer form additional energy levels close to the midgap of silicon. These states are ionized under radiation effect and form positive charge. This positive radiation-induced charge becomes additional to the oxide charge and it changes (increases) radiation sensitivity of Si MOSFET detectors. However, these states are the additional source of charge carriers under temperature increasing and lead to changing of detector’s parameters.

Estimating Effective Dose to Pediatric Patients Undergoing Interventional Radiology Procedures Using Anthropomorphic Phantoms and MOSFET Dosimeters

The purpose of this study was to estimate the effective doses received by pediatric patients during interventional radiology procedures and to present those doses in "look-up tables" standardized according to minute of fluoroscopy and frame of digital subtraction angiography (DSA). Organ doses were measured with metal oxide semiconductor field effect transistor (MOSFET) dosimeters inserted within three anthropomorphic phantoms, representing children at ages 1, 5, and 10 years, at locations corresponding to radiosensitive organs. The phantoms were exposed to mock interventional radiology procedures of the head, chest, and abdomen using posteroanterior and lateral geometries, varying magnification, and fluoroscopy or DSA exposures. Effective doses were calculated from organ doses recorded by the MOSFET dosimeters and are presented in look-up tables according to the different age groups. The largest effective dose burden for fluoroscopy was recorded for posteroanterior and lateral abdominal procedures (0.2-1.1 mSv/min of fluoroscopy), whereas procedures of the head resulted in the lowest effective doses (0.02-0.08 mSv/min of fluoroscopy). DSA exposures of the abdomen imparted higher doses (0.02-0.07 mSv/DSA frame) than did those involving the head and chest. Patient doses during interventional procedures vary significantly depending on the type of procedure. User-friendly look-up tables may provide a helpful tool for health care providers in estimating effective doses for an individual procedure.

Radiation Dose From Cone Beam CT in a Pediatric Phantom: Risk Estimation of Cancer Incidence

The objective of our study was to measure absorbed doses and calculate effective dose (ED) from cone beam CT (CBCT) with metal oxide semiconductor field effect transistor (MOSFET) detectors in an anthropomorphic phantom and to estimate the risk of cancer incidence for CBCT. Abdominal CBCT was performed in an anthropomorphic phantom of a 5-year-old child using the On-Board Imager with arbitrarily designated standard-dose (125 kVp, 80 mA, 25 milliseconds) and low-dose (125 kVp, 40 mA, 10 milliseconds) modes. The full-fan mode was used, and 20 MOSFET dosimeters were used to measure the absorbed doses in various organs. We calculated the ED, the lifetime attributable risk (LAR) for cancer incidence, and relative risk (RR) of cancer induction from a single scan for both standard- and low-dose modes in 5-year-old children. The highest absorbed doses were found in the skin, ascending colon, and stomach. The mean ED was 37.8+/-0.7 (SD) mSv for the standard-dose mode and 8.1+/-0.2 mSv for the low-dose mode. The LAR of cancer incidence ranged from 23 to 144 cases per 100,000 exposed persons for the standard-dose mode and from five to 31 cases per 100,000 exposed persons for the low-dose mode. The RR of cancer incidence ranged from 1.003 to 1.054 for the standard-dose mode and from 1.001 to 1.012 for the low-dose mode. The ED from pediatric CBCT using the standard-dose mode was considerably higher than that of MDCT, whereas the ED for CBCT using the low-dose mode was comparable to that of abdominal MDCT. For abdominal CBCT in the pediatric phantom, the highest LARs were for colon and bladder cancers and the highest RRs were for stomach and liver cancers.

Dosimetric Characteristics of Standard and Micro MOSFET Dosimeters as In-vivo Dosimeter for Clinical Electron Beam

The metal oxide semiconductor field effect transistor (MOSFET) dosimeters have recently become commercially available. The purpose of this study was to investigate the fundamental dosimetric characteristics of MOSFET dosimeters for clinical electron beams and to compare standard MOSFET and micro MOSFET dosimeters. In this study, five identical standard MOSFET (TN-502-RD) and micro MOSFET (TN-502-RDM) dosimeters were used for measurements. All measurements, with the exception of angular dependence, were performed in a slab-shaped PMMA phantom. For determining the angular dependence of MOSFET dosimeters, a cylindrically shaped PMMA phantom was used. Both MOSFET dosimeters showed excellent linearity against doses measured in the dose range of 50-600 cGy for a electron beam of 9 MeV. The reproducibility of all MOSFETs, excepted one standard MOSFET, was less than ±2 %. The dose-rate dependence of the two types MOSFET was within ±3 %. However, for the angular dependence, standard and micro MOSFETs show remarkable differences relative to gantry angles. This study shows the dosimetric characteristic of standard and micro MOSFET dosimeters for clinical electron beams. Both MOSFET dosimeters are suitable for dosimetry of electron beams in the energy range of 6 −20 MeV. However, the dose verification of radiation therapy using multidirectional electron beam treatments allows for better use of micro MOSFETs which have a reduced directional dependence compared to standard MOSFETs.

SU‐FF‐I‐56: Radiation Dose Estimation From Pediatric Cone Beam Computed Tomography

Purpose: To estimate absorbed doses and effective dose (ED) from cone beam computed tomography (CBCT) with metal oxide semiconductor field effect transistor (MOSFET) detectors in an anthropomorphic phantom, and to estimate the risk of cancer incidence from CBCT. Method and Materials: CBCT was performed in the abdominal region of a 5‐year old anthropomorphic phantom using a Varian On‐Board Imager with standard (125kVp, 80mA, 25msec) and low dose mode (125kVp, 40mA, 10msec). Full‐fan mode was employed as scanning protocol and 20 MOSFET dosimeters were used to measure the absorbed doses at various organ locations. We evaluated the effective doses, the lifetime attributable risks (LAR) and relative risk (RR) of cancer induction for both standard and low dose mode. Results: Highest absorbed doses were founded in the skin, ascending colon and stomach. EDs of CBCT were 37.8±0.7 mSv for standard dose mode and 8.1±0.2 mSv for low dose mode. LAR of cancer incidence ranged from 23 to 144 for standard dose mode and from 5 to 31 for low dose mode per 100,000 exposed persons. RR of cancer incidence ranged from 1.003 to 1.053 for standard dose mode and from 1.001 to 1.012 for low dose mode. Conclusion: ED from pediatric CBCT for standard dose mode was considerably higher than that of MDCT, while the ED for low dose mode was comparable. For abdominal CBCT in the pediatric phantom, the highest LARs were for incidence of colon and bladder cancer and the highest RRs were for incidence of stomach and liver cancer.

SU‐FF‐T‐64: Characterization of MOSFET Dosimetry System for Source Position Verification in HDR Brachytherapy

Purpose: To test the Metal‐Oxide‐Semiconductor Field Effect Transistor (MOSFET)‐based method for HDR Brachytherapy source tracking and to assess how accuracy and precision of the method changes with the MOSFET reading fluctuations and the number of dosimeters. Methods and Materials: Three standard MOSFET dosimeters connected to a high sensitivity bias supply were placed at fixed positions, 3 to 7 cm from the Ir‐192 source, driven by a Remote Afterloader (VariSource iX, Varian Medical Systems Inc.), within a solid water phantom. Six source dwell positions were planned. MOSFETs calibration was performed at a distance of 3 cm from source. MOSFET characteristics, including energy and angular dependence, dose linearity and reading variation in time, were established. A Matlab optimization code, based on the minimizing the sum of the normalized squared differences between the measured and analytically calculated dose values, was developed for source position calculation. Randomly generated measurement errors 1 to 8% were added to MOSFET readings to assess the method accuracy and precision degradation. The effect of the MOSFETs number on the system performance was also studied. Results: Measurements with three MOSFETs result in 0.2 to 1.9 mm deviations between calculated and actual source positions, with average of 0.8 mm. If fluctuations added to the MOSFET readings are of 1% of the reading value, accuracy of (0.7±0.3) mm is achieved, while fluctuations of 8% result in (5.2±2.6) mm accuracy. Increase in the number of MOSFETs until 12 results in improved accuracy of (0.3±0.2) mm and (2.9±1.5) mm for 1% and 8% high fluctuations, correspondingly. Conclusions: The study showed the potential of the method to verify the position the HDR Ir‐192 and to improve the quality control in HRD Brachytherapy. Increasing the number of MOSFET detectors improves the accuracy of the method even for higher MOSFET reading uncertainties.

Dosimetric characteristics of a MOSFET dosimeter for clinical electron beams

The fundamental dosimetric characteristics of commercially available metal oxide semiconductor field effect transistor (MOSFET) detectors were studied for clinical electron beam irradiations. MOSFET showed excellent linearity against doses measured using an ion chamber in the dose range of 20–630 cGy. MOSFET reproducibility is better at high doses compared to low doses. The output factors measured with the MOSFET were within ±3% when compared with those measured with a parallel plate chamber. From 4 to 12 MeV, MOSFETs showed a large angular dependence in the tilt directions and less in the axial directions. MOSFETs do not show any dose-rate dependence between 100 and 600 MU/min. However, MOSFETs have shown under-response when the dose per pulse of the beam is decreased. No measurable effect in MOSFET response was observed in the temperature range of 23–40 °C. The energy dependence of a MOSFET dosimeter was within ±3.0% for 6–18 MeV electron beams and 5.5% for 4 MeV ones. This study shows that MOSFET detectors are suitable for dosimetry of electron beams in the energy range of 4–18 MeV.

Evaluating the performance of a MOSFET dosimeter at diagnostic X-ray energies for interventional radiology

For reducing the risk of skin injury during interventional radiology (IR) procedures, it has been suggested that physicians track patients' exposure doses. The metal-oxide semiconductor field effect transistor (MOSFET) dosimeter is designed to measure patient exposure dose during radiotherapy applications at megavoltage photon energies. Our purpose in this study was to evaluate the feasibility of using a MOSFET dosimeter (OneDose system) to measure patients' skin dose during exposure to diagnostic X-ray energies used in IR. The response of the OneDose system was almost constant at diagnostic X-ray energies, although the sensitivity was higher than that at megavoltage photon energies. We found that the angular dependence was minimal at diagnostic X-ray energies. The OneDose is almost invisible on X-ray images at diagnostic energies. Furthermore, the OneDose is easy to handle. The OneDose sensor performs well at diagnostic X-ray energies, although real-time measurements are not feasible. Thus, the OneDose system may prove useful in measuring patient exposure dose during IR.

In Vivo Dosimetry Using a Linear Mosfet-Array Dosimeter to Determine the Urethra Dose In 125I Permanent Prostate Implants

In vivo dosimetry during brachytherapy of the prostate with (125)I seeds is challenging because of the high dose gradients and low photon energies involved. We present the results of a study using metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to evaluate the dose in the urethra after a permanent prostate implantation procedure. Phantom measurements were made to validate the measurement technique, determine the measurement accuracy, and define action levels for clinical measurements. Patient measurements were performed with a MOSFET array in the urinary catheter immediately after the implantation procedure. A CT scan was performed, and dose values, calculated by the treatment planning system, were compared to in vivo dose values measured with MOSFET dosimeters. Corrections for temperature dependence of the MOSFET array response and photon attenuation in the catheter on the in vivo dose values are necessary. The overall uncertainty in the measurement procedure, determined in a simulation experiment, is 8.0% (1 SD). In vivo dose values were obtained for 17 patients. In the high-dose region (> 100 Gy), calculated and measured dose values agreed within 1.7% +/- 10.7% (1 SD). In the low-dose region outside the prostate (< 100 Gy), larger deviations occurred. MOSFET detectors are suitable for in vivo dosimetry during (125)I brachytherapy of prostate cancer. An action level of +/- 16% (2 SD) for detection of errors in the implantation procedure is achievable after validation of the detector system and measurement conditions.

The Observed Variance Between Predicted and Measured Radiation Dose in Breast and Prostate Patients Utilizing an In Vivo Dosimeter

Report the results of using a permanently implantable dosimeter in radiation therapy: determine specific adverse events, degree of migration, and acquire dose measurements during treatment to determine difference between expected and measured dose. The Dose Verification System is a wireless, permanently implantable metal-oxide semiconductor field-effect transistor dosimeter using a bidirectional antenna for power and data transfer. The study cohort includes 36 breast (33 patients received two devices) and 29 prostate (21 patients received two devices) cancer patients. A total of 1,783 and 1,749 daily dose measurements were obtained on breast and prostate patients, respectively. The measurements were compared with the planned expected dose. Biweekly computed tomography scans were obtained to evaluate migration and the National Cancer Institute's Common Toxicity Criteria, version 3, was used to evaluate adverse events. Only Grade I/II adverse events of pain and bleeding were noted. There were only four instances of dosimeter migration of >5 mm from known factors. A deviation of > or =7% in cumulative dose was noted in 7 of 36 (19%) for breast cancer patients. In prostate cancer patients, a > or =7% deviation was noted in 6 of 29 (21%) and 8 of 19 (42%) during initial and boost irradiation, respectively. The two patterns of dose deviation were random and systematic. Some causes for these differences could involve organ movement, patient movement, or treatment plan considerations. The Dose Verification System was not associated with significant adverse events or migration. The dosimeter can measure dose in situ on a daily basis. The accuracy and utility of the dose verification system complements current image-guided radiation therapy and intensity-modulated radiation therapy techniques.