Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using <TEX>$CHF_3/O_2/NH_3$</TEX> discharges exchanging <TEX>$CHF_3$</TEX> for <TEX>$CH_4$</TEX> gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to <TEX>${\sim}0$</TEX> by changing <TEX>$CHF_3/CH_4/O_2/NH_3$</TEX> to <TEX>$CH_4/O_2/NH_3$</TEX> discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.