In recent years, the field of perovskite solar cells (PSCs) has seen rapid development, with most high‐efficiency devices incorporating dense titanium dioxide (TiO2) barrier layers and mesoporous TiO2 layers to enhance selective electron transport. However, the manufacturing process requires high‐temperature sintering steps above 450 °C, leading to significant energy consumption. In addition, this requirement greatly limits the potential applications of PSCs in the field of flexible electronics. This study introduces a new method for preparing dense‐layer‐free mesoporous PSCs using low‐temperature UVO annealing of m‐TiO2. UVO annealing effectively removes residual organic components from m‐TiO2 precursor films, enhances the conductivity and wettability of the films, thereby reducing carrier recombination and improving the performance of PSCs. Research has shown that PSC with a 40 min UVO annealed m‐TiO2 layer exhibits a final photoelectric conversion efficiency of 17.79%, comparable to devices with traditional high‐temperature annealed m‐TiO2 PSCs. In addition, after 7 days at room temperature and ambient humidity, the unpackaged device maintains a maximum conversion efficiency of 84%. These findings indicate that UVO light annealing is a feasible alternative to high‐temperature annealing, providing a simpler, more cost‐effective, and energy‐saving method for the preparation of metal oxide electron transport layer in PSCs.