The growth of microcrystalline silicon () films by plasma enhanced chemical vapour deposition (PECVD) of silane in the temperature range 200 - has been investigated. The growth system was a capacitively coupled parallel plate radio frequency (rf) glow discharge reactor in which the substrates were mounted on the cathode (powered electrode). It was found that films could be grown using 100% at a substrate temperature above with a high deposition rate and high degree or crystallinity. The main effect of mesh attachment was found to be the reduction of ionic bombardment to the film growth zone which prevents the degradation of surface crystallinity. It was also found that both P- and B-doped films with good optoelectronic properties could be grown using 100% .