Memory Storage Devices Research Articles

Structural and electrical properties of Ni-doped MnZn ferrite synthesized via solid state reaction

Abstract MnZn ferrite is commonly studied due to its exceptional magnetic, electric, and catalytic properties, making it a promising material for hyperthermia applications, magnetic fluid, memory storage devices, drug delivery, virus detection, and photocatalysis. It was identified that divalent nickel cation substitution increases the ferrite conductivity and dielectric constant. This study targets to synthesize Ni-doped MnZn ferrite by a simpler, more convenient, and economic solid state reaction, and to investigate its influence on the structural and electrical properties of MnZn ferrite. Mn0.5-xNixZn0.5Fe2O4 (x=0.1 and 0.2) was synthesized via solid state reaction with calcination and sintering temperature at 1000 °C and 1200 °C, respectively. The structural and electrical properties of the resulting pellet were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and electrochemical impedance spectroscopy (EIS). The XRD profile, indexed as cubic spinel, indicated good crystallinity and no impurity peaks were detected. As Ni2+ dopant concentration increases, a decrease in lattice parameter and an increase in theoretical and apparent densities were observed. This is attributed to the smaller ionic radius and greater mass of Ni2+ relative to Mn2+. Varying Ni2+ concentration significantly modified the morphology of the ferrite. At higher Ni2+, less uniformity in shape and size was evident in the SEM micrograph since Ni promotes aggregation at the surface. An increase in dielectric constant was also observed with increasing Ni2+ molar concentration. Since Ni2+ presents a high tendency to occupy B sites, its substitution promotes Fe2+ migration to A sites, augmenting Fe2+/Fe3+ hopping resulting in an increase in polarization and dielectric constant.

Polarization Pruning: Reliability Enhancement of Hafnia-Based Ferroelectric Devices for Memory and Neuromorphic Computing.

Ferroelectric (FE) materials are key to advancing electronic devices owing to their non-volatile properties, rapid state-switching abilities, and low-energy consumption. FE-based devices are used in logic circuits, memory-storage devices, sensors, and in-memory computing. However, the primary challenge in advancing the practical applications of FE-based memory is its reliability. To address this problem, a novel polarization pruning (PP) method is proposed. The PP is designed to eliminate weakly polarized domains by applying an opposite-sign pulse immediately after a program or erase operation. Significant improvements in the reliability of ferroelectric devices are achieved by reducing the depolarization caused by weakly polarized domains and mitigating the fluctuations in the ferroelectric dipole. These enhancements include a 25% improvement in retention, a 50% reduction in read noise, a 45% decrease in threshold voltage variation, and a 72% improvement in linearity. The proposed PP method significantly improves the memory storage efficiency and performance of neuromorphic systems.

Magnetic splitting induced ferromagnetism in chromium-doped HfSe2

Two-dimensional (2D) magnetic layered materials have gained significant interest in spintronic for memory storage devices. Herein, the electronic and magnetic properties of high-quality single crystals of chromium (Cr)-doped hafnium diselenide were studied. The electronic study indicated that the Cr-doped HfSe2 reveals the semiconducting nature with a proper bandgap as identified by angle-resolved photoemission spectroscopy and first-principle density functional theory (DFT) calculations. The magnetic results indicate that the HfSe₂ exhibited ferromagnetic characteristics with the substitution of Cr atoms in a perpendicular direction. The Cr-doped HfSe2 sample shows a ferromagnetic phase below ∼58 K, indicating the critical temperature (Tc) of magnetic order, while above this temperature, it shows a paramagnetic phase that can follow the Curie-Weiss Law. It can be seen that the magnetic moment is approximately 0.16 emu/g at 5 K, which further decreases with increasing temperature until 60 K and then transforms to a paramagnetic phase. The sample can clearly show a weak out-of-plane magnetic anisotropy with a coercivity of around 50.56 Oe and a saturation magnetization value of 0.029 emu/g. Convincingly, it was observed from the ARPES results that the valence band is split due to the spin-orbit interaction of Cr atoms, which can induce ferromagnetic order. At the same time, the temperature-dependent ARPES data shows that the splitting is higher below the Tc, while it is weaker above the Tc. The DFT results revealed that near the Fermi level, the spin-up and spin-down are spin-polarized with asymmetric trends. It can be observed that substituting Cr on the octahedral sites of Hf atoms influences the electron spin order created by Hf vacancies (as validated by the magnetic coupling measured by electron paramagnetic resonance spectroscopy experiments), which can change the magnetic alignment to induce the magnetism in HfSe2. This study highlights that doping transition metal in HfSe2 has promising potential for future applications, especially in memory devices and spintronic technologies.

Effect of Zr, Sm and Gd Doped CoFe2O4 on Structural, Spectral and Magnetic Properties

In this work, cobalt composite nano ferrites with chemical formula CoZr0.05-xRExFe1.95O4 (x = 0 and 0.025 and RE = Sm, Gd) were prepared using sol-gel synthesis method and studied structural, optical and magnetic properties of them. The Rietveld assessment of XRD data validated the emergence of a single-phase cubic spinel configuration for all compounds. SEM has been used to study the surface morphology of the compounds. Energy gap has been estimated and the values are 2 eV, 1.8 eV and 1.6 eV for CoZr0.05Fe2O4, CoZr0.025Sm0.025 Fe1.95O4, and CoZr0.025Gd0.025 Fe1.95O4 compounds respectively. FTIR and Raman spectra confirmed the structure with the appearance of standard modes. The RE replacement in CoFe2O4 ferrites has an intense impact on magnetic properties. With the substitution of Sm3+ and Gd3+ ions in cobalt-zirconium ferrite, there is a reduction in saturation magnetization (55 emu g−1 of CoZr0.05Fe2O4 reduced to 25 emu g−1 for Gd3+ and to 29 emu gm−1 for Sm3+) as the size of crystallites decreases. A decrease in crystallite size correlates with an increase in the number of spin disorder occurrences in rare Earth-substituted cobalt-zirconium ferrite nanoparticles Further, the decrease in coercivity (2440 Oe of CoZr0.05Fe2O4 reduced to 720 Oe for Gd3+ and to 29 Oe for Sm3+ with rare Earth element doping is due to the crystallite size and large lattice distortion showed an enhancement of magnetocrystalline anisotropy field which effects a shift of resonance frequencies from higher frequencies which is good for the memory storage devices.

Similarities and differences in the ordering at short and long ranges in a NaNbO3 based Pb-free smart system: a key to functional properties

In this study, we have investigated the crystal structure of the solid solution of antiferroelectric NaNbO3(NN) with ferroelectric Ba0.9Ca0.1TiO3(BCT), i.e. (1−x)NN- xBCT for 0⩽x⩽1.0 using High-resolution powder x-ray diffraction (HR-XRD) data, dielectric measurements in conjunction with Raman spectroscopic studies. The investigation of long-range structural phase transitions as a function of composition(x) using x-ray diffraction is complemented by short-range structural insights from Raman spectroscopy. The incorporation of BCT disrupts the delicate antiferroelectric ordering of NN and stabilizes various ferroelectric phases with increasing BCT content(x). At x = 0.10, the simultaneous presence of two ferroelectric phases viz., Pmc21 and Amm2, results in a threefold rise in remanent polarization compared to off-boundary compositions. The composition with higher BCT content (i.e. x⩾0.50 ) has shown the anomalous existence of two long-range cubic structures, both of which are characterized by Pm 3¯ m space group. In spite of having a two-phase long-range centrosymmetric structure, we have observed a slim Polarization vs. Electric field(P-E) hysteresis loop for 0.50⩽x⩽0.80 . This contrapositive behavior (i.e. hysteresis loop in a centrosymmetric structure) has been attributed to the correlations among local static polar distortions of rhombohedral type ascertained using Raman spectroscopy. The coexistence of two ferroelectric phases at room temperature(for x = 0.10) and a slim hysteresis loop (for 0.50⩽x⩽0.80 ) make these compositions potential ingredients for applications in ferroelectric memory and energy storage devices.

Synthesis and multifunctional characterizations of Gd2 O3 and Sm2 O3 modified ZnO nanoparticles

In the present communication multifunctional characterizations suitable for spintronics and memory storage devices are described. Double doped (Gd3+, Sm3+) ZnO nanoparticles are prepared from Sol-Gel method using poly vinyl alcohol (PVA) as chelating agent. The as prepared powders are annealed at 500 °C–1000 °C with a step size of 100 °C. The genesis of single phase hexagonal wurtzite structure, morphological and topographical changes, optical, magnetic and mechanical properties were studied with XRD (X-ray diffraction), SEM (scanning electron microscopy), TEM (transmission electron microscopy), EDS (energy dispersive spectroscopy), UV- DRS (ultraviolet diffuse reflective spectroscopy), PL (photoluminescence), VSM (vibrating sample magnetometer) and pin on disc tribometer. XRD study untangled the crystallite size and found to be in the range23-50nm. Polycrystalline nanoparticles of spherical geometry with induced porosity is observed from SEM study. The particle size associated with the samples annealed at 500 °C and 900 °C is 24 nm and 27 nm respectively from TEM study. Analyzed the proximity of functional groups, molecular vibrations in the range of 400-4000 cm−1 employing FTIR (Fourier transform infrared spectroscopy). EDS results revealed the stoichiometry of the produced samples. The pronounced optoelectronic applications of Zn1-x Gdx Smx O (ZGS) can be attributed to the large band gap (3.50–3.02 eV) associated with the materials with rise in annealing temperature. The room temperature ferromagnetism was evidenced with double doped ZnO nanomaterials. The wear coefficient, and friction coefficient were evaluated using pin-on-disc tribometer. The utility of materials as solid state lubricants was confiscated from the range of frictional coefficient values (0.067–0.893).

Tuneable quantised conductance memory states in TiO2 based resistive switching devices in crossbar geometry for high density memory applications

The tunability and controllability of conductance quantization mediated multilevel resistive switching (RS) memory devices, fabricated in crossbar geometry can be a promising alternative for boosting storage density. Here, we report fabrication of Cu/TiO2/Pt based RS devices in 8 × 8 crossbar geometry, which showed reliable bipolar RS operations. The crossbar devices showed excellent spatial and temporal variability, time retention and low switching voltage (<1 V) and current (∼100 μA). Furthermore, during the reset switching, highly repeatable and reliable integral and half-integral quantized conductance (QC) was observed. The observed QC phenomenon was attributed to the two dimensional confinement of electrons as lateral width of the conducting filament (CF) matches the fermi wavelength. The magnitude and number of the QC steps were found to increase from ∼2.5 to 12.5 and from 5 to 18, respectively by increasing the compliance current (I C) from 50 to 800 μA which also increased the diameter of the CF from ∼1.2 to 3.3 nm. The enhancement in both number and magnitude of QC states was explained using electrochemical dissolution mechanism of CF of varying diameter. A thicker CF, formed at higher I C, undergoes a gradual rupture during reset process yielding a greater number of QC steps compared to a thinner CF. The realisation of QC states in the crossbar Cu/TiO2/Pt device as well as I C mediated tunability of their magnitude and number may find applications in high-density resistive memory storage devices and neuromorphic computing.

Bifunctionalized polyamides based on quinoxaline structure for durable electrochromic display and memory storage

With the aim to obtain multifunctional durable electrochromic (EC) devices, we propose an effective strategy by introducing weak electron acceptor segment with suitable bandgap and oxidation potential. A series of quinoxaline-based units polyamides (PAs) (denoted as T2BPA-CA, T2BPA-OA, T2BPA-TP, and T2BPA-SA) were prepared from a novel donor–acceptor-donor (D-A-D) type diamine with weak electron acceptor quinoxaline and connected with two methoxyl-substituted donor triphenylamine, 10,13-bis[4-aminophenyl (4-methoxyphenyl) amino]-dibenzo[a,c]phenazine, and four dicarboxylic acids, which are high soluble in various organic solvents and exhibit excellent thermostability. Furthermore, the T2BPA-SA thin film exhibits excellent EC performance with outstanding optical contrast (50 %), high coloration efficiency (230 cm2 C−1) and impressive cycle stability (optical contrast remains 80 % over 1400 cycles) in the NIR range. Meanwhile, all of these PAs are served as memristors and exhibit typical nonvolatile ternary memory, realizing an accessible threshold voltage of −0.65 V, a retention time of more than104 s and high current switch ratio (103.52:102.43:1). Overall, this work implies the great potential of these PAs in EC displays and memory storage devices.

Effect of Gd3+ ion doping on structural, optical, magnetic and dielectric properties on superparamagnetic Mg0.5Zn0.5Fe2−xGdxO4 (0 ≤ x ≤ 1) nanoparticles synthesized via oleic acid assisted chemical co-precipitation method

In the present study, different compositions having general formula Mg0.5Zn0.5GdxFe2−xO4, (x = 0, 0.025, 0.050, 0.075, 0.1) were synthesized using chemical co-precipitation method. The substitution of Gd3+ ions have exhibited profound impacts on the structural, morphological, magnetic, and optical parameters of Mg-Zn ferrites. Single-phase cubic spinel structure has been substantiated by X-ray diffractometer (X-ray diffraction, XRD) analysis for all compositions without any contamination peak. The values of the lattice constant and X-ray density both show an increasing trend when the Gd3+ ion concentration increases. (Fourier transformed infrared spectroscopy) FTIR spectra recorded in the mid-infrared region (4000–400 cm−1) exhibit two main absorption bands associated with the Oh and Td sites within the frequency range of 400–600 cm−1. Morphological studies using (High-resolution transmission electron microscopy) HR-TEM analysis reveal agglomeration of nanoparticles and the average particle size lies between 8 and 9 nm. Maximum magnetization displays an erratic trend with increasing Gd3+ ion concentration, although both retentivity and coercivity decreases. The hysteresis curve for samples of differing ratios of Gd3+ ions demonstrated the superparamagnetic nature. Tauc’s plot was employed to calculate the energy bandgap (Eg) of synthesized nanoparticles and Eg value were observed to decline from 3.563 eV to 3.521 eV with an increasing Gd3+ ion concentration. Impedance analyzer was used in the frequency range of 100 Hz–100 MHz to study dielectric properties at room temperature. The dielectric parameters declined as the frequency values increased. Due to lower values of dielectric parameters in Gd3+ ion doped Mg–Zn nano-ferrite, these materials are suitable in the fabrication of devices that need to operate at high frequencies such as switching memory storage devices. Moreover, these materials are appropriate for application in ferrofluids and medicinal treatments such as magnetic hyperthermia because of their low coercive field value.

Thermally Activated Photochromism: Realizing Temperature‐Gated Triphenylethylene Photochromic Materials

AbstractPhotochromic materials have drawn enormous attention for their potential applications in optical memory storage and photoswitchable molecular devices. Although great achievements for photochromic materials have been fulfilled, it is still a big challenge to realize gated photochromism for ready tunable photochromic properties. In previous studies, rare examples of gated photochromism are reported. Herein, three triarylethylene derivatives FTrPE‐oI, ClTrPE‐oI and BrTrPE‐oI with reversible thermally activated photochromic characteristics are designed and synthesized, whose crystalline powders show no photochromism until thermally activated treatments to relative temperature. Temperature acts as a gate to switch the photochromic properties by switching the aggregation state from crystalline to melted amorphous. With this progress, a broader structural realm becomes accessible for gated photochromic materials, which can now be synthetically tailored for advanced future applications, e.g., in research on gated molecular machines and switches, in studies of photoisomerization mechanisms, or in the generation of thermal tracing materials. To showcase the potential of these distinct thermally activated photochromic materials, their applications in encrypted thermal printing, thermal trace monitoring as well as multi‐level anticounterfeiting are demonstrated, in addition to a comprehensive photochemical study of all compounds.

Gold nanoparticles doped organic liquid crystalline material for fast charge migration in nano-devices

ABSTRACT With the ever-growing need for low-cost, easily processable multifunctional materials and increasing miniaturisation in devices, we have landed in the era of nanodevices. Discotic liquid crystals are multifaceted materials that have shown their applicability as photonic devices, nanowires, optical switches, memory storage devices and many more. These materials show 1D conductivity which can be boosted upon doping with a suitable doping agent in appropriate concentrations. In this work, we present nanocomposite materials composed of a triphenylene discotic liquid crystal material, doped with thiol capped gold nanoparticles, and propose to apply it as a charge transportation layer in nanodevices for faster charge migration. Various techniques have been used to analyse the effect of doping on the different electrical, optical and lattice parameters of these nanocomposite systems. An increase in the value of the conductivity is obtained at higher temperatures, and it is successfully preserved till room temperature due to the presence of thiol capped gold nanoparticles in the columnar matrix. Thus, an increase in conductivity, lowering of the optical band gap, broadening of UV-Visible absorbance peak and decrease in core-to-core distance infers the increase in stability and optical and conduction properties of the host material after doping.

Enhanced dielectric, magnetic and magnetoelectric properties in 0.5BaFe12O19 - xBaTiO3 - (0.5-x)CoFe2O4 composites

(0.5)BaFe12O19 - xBaTiO3 - (0.5-x)CoFe2O4; (x = 0.1, 0.2, 0.3 & 0.4) composite system was developed through conventional solid-state technique. XRD with Rietveld refinement confirmed pure tri-phasic composites with no impurity. The microstructure of samples has inhomogeneous grain packing with average size of grains ∼0.5 μm and typically decreased with BaTiO3 increment. The dielectric constant showed low-frequency dispersion and increased with BaTiO3 increment, hence maximum at 400 °C for composite x = 0.4 (∼2.8 × 103 at 1 kHz). Composites are ferrimagnetic in nature along with presence of firm exchange coupling among BaFe12O19/CoFe2O4 ferrite phases. The samples are multiferroic owing to typically high magnetoelectric coupling coefficient which increased with BaTiO3 increment, thus composite x = 0.4 attains highest value of 4.56 mV/cm.Oe on application of ac magnetic field (Hac = 45 Oe). The results indicate that the composites are suitable for magnetic field sensors and memory storage devices.

Efficient energy and memory storage capabilities in optimized BiFeO3/MnMoO4/NiFe2O4 triphasic composites for futuristic multistate devices.

The emergence of multiferroic materials particularly bismuth iron oxide (BiFeO3) with distinctive magnetoelectric, and high energy storage capabilities, present pivotal aspects for next-generation memory storage devices. However, intrinsically weak magnetoelectric coupling limits their widespread applications, that can be leap over by the integration of BiFeO3 with enriched ferroelectric, and ferro/ferrimagnetic materials. Here, a series (1 - x)[0.7BiFeO3 + 0.3MnMoO4] + xNiFe2O4 (x = 0.00, 0.03, 0.06, and 0.09) is synthesized via citrate-gel based self-ignition, and solid-state reaction routes. Phase purity and crystallinity of tri-phase composites with surfaces revealing random and arbitrarily shaped grains are assured by X-ray diffraction, and field emission scanning electron microscopy, respectively. Dielectric studies illustrated non-linear trend for broad range of frequencies as predicted by Maxwell-Wagner theory along with single semicircle arcs in Nyquist plots that exposes grain boundaries effect. An enriched 68.42% of ferroelectric efficiency is featured for x = 0.06 substitutional contents, while magnetic computations demonstrated improved saturation magnetization (M s), remanence magnetization (M r), and coercive applied magnetic field (H c) values as 5.87 emu g-1, 0.96 emu g-1, and 215.19 Oe, respectively for x = 0.09 phase-fraction. The intriguing linear trends of magnetoelectric coupling for all the compositions are corroborating them propitious contenders for futuristic multistate devices.

A solution-processable benzothiazole-substituted formazanate zinc(II) complex designed for a robust resistive memory device.

A novel mononuclear bis(formazanate)zinc complex (1) based on a redox-active 1-(benzothiazol-2-yl)-5-(2-benzoyl-4-chlorophenyl)-3-phenyl formazan ligand has been synthesized and characterized. Complex 1 was prepared by reacting one equivalent of Zn(OCOCH3)·2H2O with two equivalents of the corresponding formazan derivative. X-ray crystallography was employed to ascertain the solid-state structure of compound 1, and the analysis revealed a distorted octahedral geometry for the complex where the symmetrical ligands exhibit a preference for coordinating with the zinc center in the 'open' form, generating five-membered chelate rings. Moreover, cyclic voltammetry analysis reveals that complex 1 exhibits the capacity for electrochemical reduction as well as oxidation, resulting in the formation of radical anionic (L2Zn-) and dianionic (L2Zn2-) states as well as the oxidation state of 1. Additionally, the developed solution-processable complex 1 was employed as the fundamental building material for resistive switching memory applications. The [FTO/ZnIIL2(1)]/Ag RRAM device demonstrates exceptional resistive memory switching properties, with a substantial ION/IOFF ratio (103), low operational VSET and VRESET (0.9 V and -0.75 V) voltages, excellent endurance stability (100 cycles), and decent retention time (more than 2000 seconds). The findings presented in this study underscore the importance of redox-active formazanate metal complexes for creating promising memory storage devices.

Atomically engineered, high-speed non-volatile flash memory device exhibiting multibit data storage operations

Non-volatile memory devices, which offer large capacity and mechanical dependability as a mainstream technology, have played a key role in fostering innovation in modern electronics. Despite the advantages of non-volatile memory devices, their low ON/OFF ratio and slow operational speed have limited their performance compared to their volatile counterparts. In this study, we present a non-volatile floating-gate memory device based on van der Waals heterostructures, which exhibits ultrahigh-speed memory operations in the range of a hundred nanoseconds with an extinction ratio of up to 106. The device consists of atomically sharp interfaces between different functional elements, including atomically thin sheet of multilayer Graphene (MGr) as a floating gate, hexagonal boron nitride (h-BN) as a tunnel barrier, and two-dimensional (2D) semiconductor tin di-selenide (SnSe2) as a channel material. The memory device exhibits excellent endurance performance with stable and dependable behavior across numerous program/erase cycles, comparable to commercial volatile dynamic random access memory technology. In addition, we demonstrate the ability of the device to store multiple bits per memory cell, which offers promising potential for ultrahigh-density information storage. Our findings provide important implications for memory storage, data processing, and electronic device development, and offer new opportunities in the field of emerging 2D materials with optimal device engineering.

Modified BBFTO ceramic oxide with high dielectric constant and low loss-tangent for possible electronic applications

In this report, a complex barium titanate ceramic oxide of the form BaBi1.6Fe0.4TiO6 was prepared by the solid-state casting process. More Bi3+ percentage was selected to boost the dielectric and ferroelectric effects, while lowering the Fe3+ content could minimize the leakage current and consequently, the dielectric loss (tanδ). The X-ray diffraction (XRD) data suggests an establishment of monoclinic distortion (P21/c) of smaller mean crystallite size (∼40 nm) using the Debye-Scherrer formula. The compound exhibits dielectric values, such as ɛr ∼ 771, and relatively low loss, tanδ ∼ 0.017 at the ambient experimental conditions. Thus, the material can be incorporated into different electronic devices where higher dielectric constant and lower losses are essential, for example, multi-layered ceramic capacitors, transmission lines, and gate dielectrics. The AC-conductivity essence of the compound follows Jonscher’s power law as well as Arrhenius relation. The PE hysteresis loop was traced at different conditions with a function of the incident electric field in the ambient atmospheric conditions. The outcome of this study revealed that the material has remanent polarization hence suggesting a ferroelectric effect with less hysteresis loss; therefore, it could be useful in memory storage devices.

Wearable flexible memristor based on titanium dioxide (TiO2)-Zinc oxide (ZnO) embedded in polyvinyl alcohol (PVA) matrix

Resistive switching memory is a next-generation potential contender for non-volatile memory devices. In this current study, we have showcased the switching mechanism of a fabricated Al/ZnO/TiO2-PVA/Al coated flexible photo-paper memory device and done a comparative study with another fabricated Al/ZnO-PVA/Al coated flexible photo-paper memory storage device. The ampere-voltage study of the crafted devices demonstrates that devices exhibit resistive switching behaviour. The ON/OFF current ratio was enhanced in Al/ZnO/TiO2-PVA/Al coated flexible photo-paper memory device over Al/ZnO-PVA/Al coated flexible photo-paper memory device by ∼105. Further various characterizations of the prepared material and fabricated devices were carried out to check their properties. A flexibility study was carried out for Al/ZnO/TiO2-PVA/Al coated flexible photo-paper memory device, the device was bent in various radii and the current-voltage study was done. These all studies demonstrate a best-grade memory device for future flexible electronic devices.

First Observation of Induced Ferroelectric and Magnetoelectric Properties in Pristine and Ni‐Intercalated Mo2TiC2Tx Double Transition Metal MXene

AbstractIn recent years, multiferroic (MF) materials have attained remarkable attention because of their exceptional ability to demonstrate both ferroelectric (FE) and magnetic properties simultaneously which has lead to their applications in memory, sensors, and energy storage devices. Here, a simple synthesis approach is used to enhance the ferroelectricity and induce the multiferroicity in double transition metal carbide (DTM) MXene film. The successful synthesis is confirmed by X‐ray Diffraction (XRD), Raman Spectroscopy, and Scanning Electron Microscopy (SEM) analysis. In addition, the FE and magnetic hysteresis (MH) loops are conducted to observe the nature of synthesized materials. Furthermore, the magnetoelectric (ME) effect is also examined to explore its significance in data storage and ME signal generation devices. Thus, the findings reveal the first report on the co‐existence of FE and magnetic properties of DTM MXene for potential applications in nano‐electronic devices of future technology.

Impact of silver substitution on the structural, magnetic, optical, and antibacterial properties of cobalt ferrite

Silver-doped Cobalt Ferrite nanoparticles AgxCo1−xFe2O4 with concentrations (x = 0, 0.05, 0.1, 0.15) have been prepared using a hydrothermal technique. The XRD pattern confirms the formation of the spinel phase of CoFe2O4 and the presence of Ag ions in the spinel structure. The spinel phase AgxCo1−xFe2O4 nanoparticles are confirmed by FTIR analysis by the major bands formed at 874 and 651 cm−1, which represent the tetrahedral and octahedral sites. The analysis of optical properties reveals an increase in band gap energy with increasing concentration of the dopant. The energy band gap values depicted for prepared nanoparticles with concentrations x = 0, 0.05, 0.1, 0.15 are 3.58 eV, 3.08 eV, 2.93 eV, and 2.84 eV respectively. Replacement of the Co2+ ion with the nonmagnetic Ag2+ ion causes a change in saturation magnetization, with Ms values of 48.36, 29.06, 40.69, and 45.85 emu/g being recorded. The CoFe2O4 and Ag2+ CoFe2O4 nanoparticles were found to be effective against the Acinetobacter Lwoffii and Moraxella species, with a high inhibition zone value of x = 0.15 and 8 × 8 cm against bacteria. It is suggested that, by the above results, the synthesized material is suitable for memory storage devices and antibacterial activity.

Correlation of magnetic and dielectric relaxation to perovskite/spinel structural phase transition in Bi0.9La0.1FeO3–Fe3O4 bi-phase composites

Nanocomposites are widely investigated nowadays due to their vast applications in multifunctional devices. La-doped Bi0.9FeO3 is considered as potential candidate to be utilized in multiferroic applications. However, limitations of this composition include weak magnetic and magnetoelectric response. To overcome weak magnetic response of this material, a series of nanocomposite samples is presented here by combining it with optimized Fe3O4 contents. X-ray diffraction patterns confirm the cubic structure of Fe3O4 belonging to space group Fd3‾m and the rhombohedral-type perovskite crystal structure of Bi0.9La0.1FeO3 having space group R3m. Field emission scanning electron microscopy reveals spherical shapes of nanograins. High dielectric constant with fewer energy losses revealed for pure Bi0.9La0.1FeO3 composition, while saturation magnetization and remanent magnetization were increased with the addition of Fe3O4 phase into Bi0.9La0.1FeO3. Enhanced magnetic properties with moderate dielectric properties of 0.6Bi0.9La0.1FeO3+0.4Fe3O4 make it a prominent and potential candidate to be utilized in memory storage devices.