Preparation conditions of ZnSe 1− x Te x crystals should guarantee stability of their scintillation parameters (light output, after glow, luminescence maximum wavelength), optical uniformity, high mechanical strength and resistance to cracking. These crystals were grown by the Bridgman technique under different degrees of melt overheating and related evaporation of the more volatile components. Annealing was carried out at 1170–1270 K under zinc vapor and at 1270 K in argon atmosphere. In this paper studies are reported on the influence of the growth parameters on the distribution of Te along the crystal length, the structural perfection of the grown crystals, and their optical and mechanical properties. Wurtzite-sphalerite transformations occurring during isothermal annealing of the crystals and their effects upon resistance to cracking are studied. It can be concluded that the type and concentration of defects, distribution of tellurium, luminescent and optical characteristics of ZnSe 1− x Te x grown using the Bridgman method strongly depend on the degree of melt overheating. Melt overheating by 50 K ensured crystal uniformity of optical absorption. Melt overheating over 100 K led to twin interlayers. With concentration of Te (C Te) >0.3%, the sphalerite structure is stabilized and the packing defects due to twinning disappear. The data obtained provide evidence of a positive effect of Te isovalent dopant upon perfection of zinc selenide crystals, which is presumable due to stabilization of the sphalerite structure leading to optical uniformity. The thermal processing of the grown crystals results in almost complete disappearance of cracking of the material. During this process, the distribution of an optical transmission on a section of crystals becomes more homogeneous, the magnitude of mechanical strength of a central part essentially increases and is levelled in all the volume of the material. Possible chemical reactions are considered which lead to the contamination of crystals with an impurity of carbon, resulting in a decrease of transparency of scintillator ZnSe 1− x Te x in the region of intrinsic radiation.
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