Electrical Conduction Mechanism Research Articles

Experimental Investigations of the AC-Conductivity in NaTaO3 Ceramic Materials Doped with Cu and Al Metal Ions

Two ceramic samples of sodium tantalate (NaTaO3), doped with metal ions of copper (Cu; sample S1) or aluminum (Al; sample S2), were obtained by the sol-gel method. Complex impedance measurements in the frequency range (200 Hz–2 MHz) and at temperatures between 30 °C and 90 °C allowed identification of a transition temperature from semiconductor-type behavior to conductor-type behavior for each sample (52 °C for sample S1 and 54 °C for sample S2). In the temperature range with semiconductor behavior, the activation energy of each sample was determined. Based on the Mott’s variable-range hopping (VRH) model, the density of localized states at the Fermi level, N(EF), the hopping distance (R) and the hopping energy (W) were determined, for the first time, on NaTaO3 samples doped with Cu or Al metal ions. The increase in N(EF) of sample S2 compared to N(EF) of sample S1 was explained by the decrease in the hopping distance of charge carriers in sample S2 compared to that in sample S1. Additionally, using the correlated barrier hopping (CBH) model, the energy band gap (Wm) and the hopping (crossover) frequency (ωh) at various temperatures were determined. Knowledge of these electrical properties is very important for explaining the electrical conduction mechanisms in metal ion-doped compounds, with perovskite structure being of interest for the use of these materials in the conversion of thermoelectric energy, photocatalytic applications, electronics or other applications.

Electrical transport and dielectric relaxation mechanism in Zn0.5Cd0.5Fe2O4 spinel ferrite: A temperature- and frequency-dependent complex impedance study

In the present study, the frequency-dependent dielectric relaxation and electrical conduction mechanisms in sol-gel-derived Zn0.5Cd0.5Fe2O4 (ZCFO) spinel ferrite were studied in the temperature range of 343–438 K. The formation of the ZCFO spinel ferrite phase with space group Fd3m was confirmed by X-ray diffraction analysis. The dielectric relaxation and electrical conduction mechanisms were studied using complex impedance spectroscopy (CIS). In the Nyquist plots, depressed semicircles were fitted with an equivalent circuit model with configuration (RGBQGB) (RGQG), signifying the contributions from grain boundaries and grains to the charge transport mechanism in the sample. The frequency-dependent AC conductivity was found to follow Jonscher's power law, and the frequency exponent term depicted the overlapping large polaron hopping (OLPH) model as the dominant transport mechanism. The activation energies for conductivity, electric modulus and impedance were calculated to identify the nature of the charge carriers governing the relaxation and conduction mechanisms in the prepared sample. Complex modulus studies confirmed the non-Debye type of dielectric relaxation, whereas tangent loss and dielectric constant analyses confirmed the thermally activated hopping mechanism of charge carriers in Zn0.5Cd0.5Fe2O4 spinel ferrite.

The electrical conductivity mechanism of Graphene/Copper composite fabricated by one-step pulsed electrodeposition

Copper plays a key role in electronics, energy, and so on. However, copper faces the challenge of increasing resistivity with increasing temperature. To overcome this problem, graphene was introduced into copper to prepare graphene/copper (Gr/Cu) composites. Here, we report on the preparation of Gr/Cu-Cu wires and Gr/Cu foil by pulse electrodeposition (P-EP). The electrical conductivity of the Gr/Cu foil was 3.8 % IACS higher than that of pure Cu foil under 180 °C. Graphene plays a crucial role in providing an electron transfer path in the Gr/Cu composite to improve the electrical conductivity under high temperatures. The P-EP process can not only effectively reduce the raw GO, but also introduce nitrogen into graphene which further promotes the transfer of electrons from copper to graphene. These results suggest that Gr/Cu composites have promising prospects for applications at high temperatures and could potentially replace traditional pure Cu.

Assessment of the Influence of Fabric Structure on Their Electro-Conductive Properties.

Electro-conductive fabrics are key materials for designing and developing wearable smart textiles. The properties of textile materials depend on the production method, the technique which leads to high conductivity, and the structure. The aim of the research work was to determine the factors affecting the electrical conductivity of woven fabrics and elucidate the mechanism of electric current conduction through this complex, aperiodic textile material. The chemical composition of the material surface was identified using scanning electron microscopy energy dispersion X-ray spectroscopy. The van der Pauw method was employed for multidirectional resistance measurements. The coefficient was determined for the assessment of the electrical anisotropy of woven fabrics. X-ray micro-computed tomography was used for 3D woven structure geometry analysis. The anisotropy coefficient enabled the classification of electro-conductive fabrics in terms of isotropic or anisotropic materials. It was found that the increase in weft density results in an increase in sample anisotropy. The rise in thread width can lead to smaller electrical in-plane anisotropy. The threads are unevenly distributed in woven fabric, and their widths are not constant, which is reflected in the anisotropy coefficient values depending on the electrode arrangement. The smaller the fabric area covered by four electrodes, the fewer factors leading to structure aperiodicity.

Structural and physical properties of Pb(Zr0.4Ti0.6)O3 epitaxial film with LaNiO3 electrodes

Epitaxial LaNiO3 (LNO)/PbZr0.4Ti0.6O3 (PZT)/LaNiO3 heterostructures have been deposited on LaAlO3 (LAO) substrates, in which LNO films were prepared by magnetron sputtering and PZT films with thicknesses ranging from 40 nm to 160 nm were deposited via sol-gel method. It is found that the structural and physical properties of PZT films are closely related to the tetragonality (c/a-1). With increasing PZT thickness, both tetragonality and remanent polarization increase, and the maximum tetragonality and remanent polarization correspond to a 120-nm-thick PZT film capacitor with a remanent polarization of 61.6 μC/cm2 measured at 425.00 kV/cm. However, as the thickness of PZT film is further increased, the ferroelectric polarization decreases which is attributed to relaxation of the PZT film. The leakage current mechanism of the capacitor remains unchanged regardless of the PZT thickness. It is Space Charge Limited Current (SCLC) conduction mechanism at high electric fields and Ohmic conduction mechanism at low electric fields.

Study on electrical conductive mechanism of mayenite derivative C12A7:C

Abstract This study explains the conductive mechanism of C12A7:C from the perspective of crystal structure. C12A7:C is a carbon derivative of C12A7 and prepared by CaCO3 and Al2O3 in sealed graphite crucible through high-temperature sintering experiments. The main component was confirmed to be C12A7:C through X-ray diffraction inversion analysis. The four-probe method revealed that it is a semiconductor with conductivity of 4,339 S/m. A conductive model of C12A7:C crystal was established to study its conductive mechanism. Through theoretical calculations of the conductive structure model, the density of states and transfer function are important factors determining the conductivity of C12A7:C crystals. Based on the analysis of these two factors, C is the key to electron transfer in the C12A7:C crystal. Further research indicates that the C–C bond is the main form of C in C12A7:C crystals. These C–C bonds satisfy the formation conditions of conjugated systems and are key to the conductivity of C12A7:C crystals. Through simulation calculations, the volt ampere characteristic curve of C12A7:C exhibits Ohmic conductor characteristics. The conductivity of C12A7:C obtained through theoretical calculation is consistent with the experimental results. In conclusion, the conductivity of C12A7:C crystal is mainly due to the C–C conjugated system formed by carbon atoms in the crystal.

Study of conduction mechanisms of InSeSb nano-chalcogenide alloys

The electrical conduction mechanisms for bulk samples of In0.1Se0.9−x Sb x (x = 0, 0.04, 0.08 and 0.12) nano-chalcogenide system, synthesized by the melt-quenching technique are investigated through current–voltage (I–V) characteristics. For the detailed study of conduction mechanism pellets of bulk samples are prepared. A thorough examination of electrical conductivity is done in the temperature range of 295–318 K and 0–50 V voltage range. From I–V measurements it is observed that samples are showing ohmic nature at lower field and non-ohmic nature at relatively higher field values. The temperature dependence of DC conductivity is analyzed using the Arrhenius relationship which is found to increase with Sb content. The value of activation energy and pre-exponential factor are calculated, which revealed that the conduction is due to the hopping of charge carriers among the localized states. Different parameters of Mott’s variable range hopping such as degree of disorder T 0, density of localized states N(E F), hopping distance (R hop), and hopping energy (W) are calculated. For the high field conduction process Poole–Frenkel, and Schottky processes are studied.

Electrical properties and conduction mechanisms of Ba0.75Sr0.25Ti1-xZrxO3 ceramics synthesized by sol-gel route

A series of Ba0.75Sr0.25Ti1-xZrxO3 (x = 0, 0.01, 0.03, 0.05, and 0.1) ceramics were synthesized via a facile sol-gel route. The confirmation of a tetragonal structure was achieved through Rietveld refinement of the powder X-ray diffraction (XRD), and the finding was subsequently corroborated by Raman spectroscopy. The Scanning electron microscopy (SEM) confirmed the roughly cubical-shaped grains and average grain size is 0.31 μm for x = 0 and 0.70 μm for x = 0.05. The electrical properties such as dielectric constant, dielectric loss and ac/dc conductivity were investigated as a function of temperature and frequency. The Jonscher's universal power law (JPL) and Arrhenius equation have been used for the analysis of conductivity. The electrical conductivity variation at intermediate frequencies was explained using JPL. The Super-linear power law (SPL) explains the electrical response at higher frequencies. The temperature-dependent frequency exponents ‘s1’ and ‘s2’ were employed to predict the quantum mechanical tunneling (QMT), non-overlapping small polarons hopping (NSPT), and correlated barrier hopping (CBH) conduction mechanisms.

Investigation of structural, dielectric and optical properties of the (Bi0.5La0.5Fe)0.5(Bi0.5Na0.5Ti)0.5O3perovskite for some electronic devices

This paper outlines the investigation of structural, dielectric, complex impedance and optical properties of lanthanum-modified (Bi[Formula: see text]La[Formula: see text]Fe)[Formula: see text](Bi[Formula: see text]Na[Formula: see text]Ti)[Formula: see text]O3 (BLF–BNT) single perovskite oxide synthesized by conventional solid-state reaction method. From Rietveld refinement, the crystal structure of the BLF–BNT ceramic has confirmed a tetragonal and the estimated average crystallite size is found to be 43.6[Formula: see text]nm. The dielectric properties of the La-doped BLF–BNT ceramic reveal the presence of Maxwell–Wagner-type dielectric dispersion. This suggests the occurrence of charge accumulation at grain boundaries and interfaces within the material. The complex impedance and complex electric modulus studies were employed to gain insight into the microscopic dielectric relaxations and conduction processes of the material. The electric modulus spectroscopy reveals the existence of nonDebye-type relaxation processes, including localized and long-range relaxation processes. The Nyquist and Cole–Cole plots show the semiconducting nature of the BLF–BNT ceramic. With the help of the Arrhenius method based on the imaginary portion of the electrical impedance and modulus, activation energies and relaxation times have been estimated. These parameters contribute to a deeper understanding of the electrical properties and conduction mechanisms within the material. Further, Raman spectroscopy, a nondestructive chemical analysis technique, was conducted to confirm the composition and structural integrity of the proposed system through its atomic vibrations. Also, the bandgap energy of the material has been estimated using Tauc’s relation and is found to be 1.69[Formula: see text]eV. This signifies that the BLF–BNT ceramic possesses a suitable bandgap for certain device applications, making it a promising candidate in various technological fields. Moreover, the overall comprehensive study of the proposed ceramic provides valuable insight and opens new possibilities for its potential applications in various electronic devices.

Role of Ti interfacial layer in the stability of TiO2 based transparent synaptic device

Interface engineering plays a pivotal role in manipulating the electrical transport and conduction mechanism of a synaptic device. In this work, the impact of Ti as an interfacial layer is systematically investigated by inserting ∼5 nm thin film at both interfaces of a functional layer (TiO2). Interestingly, it was observed that Ti layers significantly regulate the migration of oxygen ions/vacancies at the interfaces yielding an improved stability from 10 to 200 cycles, sustained over a longer period ∼8 × 103 s. Forming free and gradual transition in conductance on positive bias region under a controlled compliance current ∼0.3–17 mA demonstrates the multilevel switching highlighting the typical synaptic behavior of memristor. The ohmic conduction and space charge-limited current mechanism was found across the various resistive states signifies the trapping/de-trapping. Besides, other key parameters of synaptic device such as paired pulse facilitation, depression, and short-term memory together with the excellent transmittance in the visible spectral range makes our device adequate for innovative transparent neuromorphic applications.

Effect of Eu and Mn co-doping on temperature dependent dielectric relaxation behaviour and electric conduction mechanisms of bismuth ferrite

Effect of Eu and Mn co-doping on temperature dependent dielectric relaxation behaviour and electric conduction mechanisms of bismuth ferrite

Calculating the Density Energy of Se100-XGeX and Se62Ge35X3 Semiconductor Materials

In this paper, chalcogenide glasses are studied using a range of experimental techniques for the purpose of understanding their electrical properties with the aim of providing new strategies for producing a new class of electronic devices made of advanced amorphous materials. The electrical properties of chalcogenide glass are very low cost to produce competitive devices; hence, a deeper understanding of their electrical transport properties may provide the necessary insight to enhance merit. For this purpose, the electrical properties studied by some researchers were relied upon, mathematical equations were performed and the program is designed to compute the energy state density in both extended and localized systems region of Se100-xGex with (x = 5, 25, 28, 30 and 38) and Se62Ge35X3 glasses (where X is Sb, Sn, or Bi) in different concentrations. Characterizing the electrical properties of Se100-xGex and Se62Ge35X3 glasses use to determine the density of energy states. The results of electrical measurements confirmed the presence of two mechanisms of electrical conduction: conduction in extended states at high temperatures and conduction in localized states at medium temperatures. Effective substitution results in a change in the local and extended state coefficients. This effect was measured as a function of concentration.

Investigation of AC and DC Electrical Conductivity in Ethyl Cellulose (EC) and Poly Methyl Methacrylate (PMMA) Polyblends

The study of AC and DC electrical conductivity is crucial for understanding the behavior of charge carriers within materials and their mobility. Ethyl cellulose (EC) stands out among cellulose ethers due to its favorable electrical, mechanical, and weathering properties. Poly Methyl Methacrylate (PMMA) is a thermoplastic known for its rigidity, transparency, and outdoor durability, making it a valuable material. Despite being insulating materials, both EC and PMMA exhibit limited free charge carriers and low mobility. In this research, AC and DC electrical properties of Ethyl Cellulose (EC), Poly Methyl Methacrylate (PMMA), and their blends doped with tetrahydrofuran (THF) film were investigated using isothermal evaporation techniques. The investigation focused on the effects of temperature, electric field, and frequency on electrical conduction mechanisms. Measurements were conducted across frequencies ranging from 1 KHz to 1 MHz at temperatures between 323 K and 373 K. Results indicate that AC electrical conductivity of Ethyl Cellulose (EC), Poly Methyl Methacrylate (PMMA), and their blend (EC/PMMA) increases with higher frequencies of the applied electric field. Meanwhile, DC electrical conductivity of Ethyl Cellulose (EC), Poly Methyl Methacrylate (PMMA), and their blend (EC/PMMA) rises with increasing temperature. X-ray diffraction (XRD) analysis further supports these conductivity changes in the blend.

Electrical Conduction Mechanisms in Gd-Substituted WO3 Ceramics: Experimental and Theoretical Approaches

Electrical Conduction Mechanisms in Gd-Substituted WO₃ Ceramics: Experimental and Theoretical Approaches

Teachable Moments in ECG: The Physiology Behind the Pattern

The electrocardiographic analysis of heart blocks provides great opportunities for the discussion of mechanisms of electrical cardiac conduction, serving as “teachable moments” in medicine. Recognition of heart blocks can sometimes be a challenge as they can present in many forms, different severities and levels of blocks that present as varied patterns on electrocardiographic tracing. The ultimate key to correct diagnosis rests on adequate understanding of normal electrophysiology of the electrical system of the heart. While it is vital to recognize the pattern, we should always know and understand the physiology behind the pattern. This article presents a detailed analysis of a case of heart block which can easily be misinterpreted on first look. The case is featured not for its rarity but for the interesting concepts in cardiac electrophysiology that are highlighted. Navigation of the different elements of tracing can be an adventure and a great learning experience enjoyed by both students and experts. Keywords: Heart block, ECG, electrocardiography

DISCUSSION OF THE MECHANISM OF THE ELECTRICAL CONDUCTIVITY OF PURE WATER IN THE FRAMEWORK OF THE BJERRUM MODEL

An alternative mechanism of electrical conductivity and ionization of molecules in pure water is considered. Calculation of the temperature dependence for the activation energy of ionization of water molecules was carried out using data on the value of its ionic product. The calculated activation energies for the ionization and flow processes show the presence of a certain proportionality between them. This suggests that the ionization of water is caused by intermolecular forces rather than intramolecular forces. Accordingly, the electrical conductivity of water is associated with the appearance and movement in it of L and D defects of hydrogen bonds between water molecules, which have significant electrical pseudo charges and are considered in the Bjerrum model for ice. This work proposes a new interpretation of the mechanism of ionization (pseudoionization) of molecules and generation of L and D defects in water. Rotation is considered not for one, but for two of its molecules in opposite directions with partial compensation of their angular momentum, and the breaking of not three bonds for one molecule, but four bonds with neighbors for two molecules. Moreover, these four neighbors do not include molecules from water clusters that have stronger bonds, since neighboring molecules with weaker bonds can be found for the process of rotation activation. Accordingly, the exponential contribution made by molecules from water clusters is absent or small in the ionization activation energy. In this way, the activation energy for the flow, which occurs throughout the entire volume of the liquid and automatically includes molecules from clusters, differs from the activation energy of electrical conductivity, which occurs for individual molecules in chains of bonds. The presence of a maximum in the ionic product of water near 250 ⁰C can be explained by the rapid decrease in the lifetime of L and D defects with heating, which prevents the use of the standard equation for accurate calculation of the ionization activation energy above 100...200 ⁰C. However, the presence of this maximum contradicts the generally accepted model of proton hopping between neighboring hydronium and water molecules in the mechanism of its electrical conductivity.

Transitions of electrical conduction mechanism in graphene flake van der Waals thin film

The electrical conduction mechanism in 2D van der Waals (vdW) thin film made of graphene flakes can be characterized by the variable range hopping (VRH) over a wide range of temperature, followed by a transition into an Arrhenius type conduction at the higher temperature. Regarding the nature of the subsequent Arrhenius type conduction, a lack of consensus exists between the nearest neighbor hopping (NNH) and the band conduction (BC). We discuss how to assess the transition in conduction mechanism based on the transient behavior of the reduced activation energy (W) and the structure of electronic density of states (DOS) of the sample. With a multi-channel conduction model, we show that the transition from VRH to BC always accompany an increase in W, which is absent in the transition from VRH to NNH. Also discussed are the peculiarities of VRH in vdW thin film and what they imply towards the properties of defects. In most vdW flake thin films, the spread of defect band in DOS is governed by the intrinsic defect energy not by the Coulomb interaction between defects. It can further be deduced that the gap in DOS near Fermi level associated with Efros-Shklovskii VRH observed in vdW film is not a Coulomb gap as found in weakly doped crystalline semiconductor, but inherent in the distribution of defect intrinsic energy. For the graphene flake thin film we synthesized, Mott VRH and BC are identified.

A permittivity-conductivity joint model for hydrate saturation quantification in clayey sediments based on measurements of time domain reflectometry

Hydrate saturation (Sh) is one of the key parameters for resource assessment of hydrate reservoirs and production optimization of natural gas. There are still significant challenges in determining the Sh in clayey formations. Both dielectric and resistivity logging tools have been used for identifying and evaluating hydrate-bearing formations; however, there is little work on a joint analysis and modelling of the permittivity and resistivity for quantifying the Sh. To bridge the knowledge gap, we have proposed a novel permittivity-conductivity (P–C) joint approach based on TDR (time domain reflectometry)-derived parameters (i.e., apparent permittivity Ka and bulk conductivity σdc) in this work. The proposed P–C joint approach can provide a theoretical basis for the joint interpretation of dielectric and resistivity geophysical measurements on hydrate-bearing formations in the field. First, the basic theory for deriving the Ka and σdc from the TDR responses of hydrate-bearing sediments was formulated based on the dielectric polarization and electrical conduction mechanisms. Second, an experimental campaign was carried out including the development of experimental system, calibration of TDR probe and design of experimental scheme. Third, the influences of hydrate saturation, clay mineralogy and clay content on the TDR responses of unconsolidated sediments were examined. Then the Ka and σdc were related to Sh respectively, and finally a novel P–C joint model for the quantification of Sh in clayey sediments was established and verified. It has been demonstrated that: (1) the Ka of the clayey samples with hydrates decreases almost linearly with an increasing clay content up to 20 %, while the σdc of the smectite-bearing samples decreases nonlinearly in contrast to the linear trend for illite; (2) the power-law mixing formula incorporating an empirical exponent is a preferable permittivity model for hydrate-bearing clayey sediments due to its merits of empirical and theoretical nature, while the Simandoux equation is effective to account for the clay effects on the conductivity of hydrate-bearing sediments with smectite and illite; (3) the P–C joint model can be established by utilizing the porosity of hydrate-bearing sediments as a bridge parameter between Ka and σdc. The variation behavior of Ka and σdc with different types and contents of clay minerals can be explained by the difference of the amount of bound water and swelling effects between the illite-bearing and smectite-bearing samples. The proposed P–C joint model outperforms the standalone permittivity-based and conductivity-based models especially for the clayey cases. The root-mean-squared errors of the P–C joint models are 7.339, 2.930 and 2.065 % for the clean-sand samples, clayey samples with illite and smectite, respectively.

Electrical conductivity of nanofluids with single- and multi-walled carbon nanotubes. Experimental study

The object of this paper is to experimental study the electrical conductivity of nanofluids with carbon nanotubes (CNT). Nanofluids based on water, ethylene glycol and isopropyl alcohol with single-walled (SWCNT) and multi-walled (MWCNT) carbon nanotubes are considered. In some cases, surfactants were used to prepare the nanofluid. CNT concentrations varied from 0.05% to 1%. It was shown that the electrical conductivity of all nanofluids much more than that of base fluids. The influence of surfactants on the electrical conductivity of nanofluids is studied and analyzed. The use of surfactants in all cases increases the electrical conductivity of the initial base fluids. The greatest excess of the electrical conductivity was achieved when using ionic surfactants. For the first time, the electrical conductivity of nanofluids with SWCNTs and MWCNTs is systematically compared. The same base fluids are used for this. It was shown that electrical conductivity of nanofluids with SWCNTs significantly exceeds that of nanofluids with MWCNTs. The effect of aspect ratio on electrical conductivity of nanofluids with SWCNTs and MWCNTs are studied. In conclusion, the possible mechanisms of electrical conductivity of the considered nanofluids are discussed.

Influence of Sb doping on thermal properties and electrical conductivity mechanism of SbxSe50–xSn20Te30 chalcogenide glassy systems

Tunability of thermal, and electrical characteristics of SbxSe50-xSn20Te30 (x = 2, 4, 6, and 8 at. %) bulk glass systems with varying doping concentrations are the major objective of this study. The melt quenching technique has been employed to synthesize the samples. Various thermal parameters have been inspected by using DSC measurements. The effect of Sb addition on the glass transition temperature (Tg), crystallization temperature (Tc), peak crystallization temperature (Tp), and melting temperature (Tm) have been observed from DSC thermograms. The dependence of Tg, Tc, Tp, and Tm on the heating rate has been measured. The thermal analysis is performed under non-isothermal conditions at heating rates of 5, 10, 15, and 20 K/min. The activation energies for the glass transition temperature are estimated by using the Kissinger method and are found to decrease from (211.21-168.85) KJ.mol−1. Thermal stability and glass forming ability for all glassy compositions have been examined in terms of Hruby's parameter. In addition, electrical conductivity mechanisms over vast temperature and frequency ranges are analyzed. The DC conductivity mechanism has been analyzed by deploying Mott and Greaves's variable range hopping model, while the AC conductivity mechanism has been analyzed by deploying the modified correlated barrier hopping model. AC conductivity scaling property has been examined by using the Pan and Ghosh model. The influence of Sb addition has been observed as the DC and AC conductivity increases with the increase of doping concentration.