Microwave surface resistance (R s ) measurements on large-area (11.4 cm2) Tl-based films deposited onto Ag (Consil 995) substrates have been made at a frequency of 18 GHz as a function of temperature. Deposition onto unoriented Ag substrates yields unoriented films characterized byR s values of 8.2 and 33.6 mΩ at 10.6 and 77 K, respectively. In contrast, similar deposition onto oriented Ag substrates yields oriented films with values of 12.6 and 14.6 mΩ at 11.2 and 77 K, respectively; corresponding Cu values are 9 and 21 mΩ. Additionally, it is found that the dependence ofR s on microwave surface magnetic fieldH s is weaker for the oriented films. These results suggest that the effect of orienting thec-axis in Tl films is twofold: (1) the high-frequency superconducting transition is made considerably sharper, resulting in a lowerR s value at 77 K, and (2) the rate of increase inR s with appliedH s is reduced. Both effects have significant ramifications for the potential application of these materials to high-frequency accelerating cavities.
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