Sheet Resistance Measurements Research Articles

Magnetotransport of fluxoids in intermediate-phase type-II superconducting NbN thin films around Tc

The mixed state transport properties of type-II superconductors are strongly influenced by the dynamic behavior of quantized magnetic fluxoids around the critical temperature (Tc), where a combination of normal and superconducting properties is exhibited. To understand the mixed state transport properties of type-II superconducting NbN ultrathin films (2D) we measured sheet resistance (RxxM) and Hall resistance (RxyM) of a 5-nm-thick NbN film around Tc (10.75 K) at temperatures 10.40, 10.68, and 10.77 K. Hall resistance (HR) was measured in external out-of-plane and in-plane magnetic fields up to 6 T, using 100 µA and 1 mA driving current in Van der Pauw geometry. The electric field of applied bias and Lorentz force of applied external magnetic field causes a movement of the normal conducting electrons within each fluxoid. The moving fluxoids cause dissipation and generation of Hall voltage. We developed a macroscopic analysis of the Hall resistance arising from fluxoids, to advance the differentiation between dissipating current and superconducting currents in type-II superconductors at Tc. We have extracted the number of normal conducting carriers per fluxoid and areal density and mobility of the fluxoids in dependence on the external magnetic field. This differentiation provides valuable insights into the dissipation mechanisms observed during transport measurements, e.g., after localized heating due to single photon absorption in nanostructured type-II superconductors. Furthermore, the developed macroscopic analysis of Hall resistance of fluxoids shows promising potential for investigating the fundamental aspects of fluxoid-defect interactions in type-II superconductors. Published by the American Physical Society 2024

Magnetotransport of fluxoids in intermediate-phase type-II superconducting NbN thin films around Tc

The mixed state transport properties of type-II superconductors are strongly influenced by the dynamic behavior of quantized magnetic fluxoids around the critical temperature (Tc), where a combination of normal and superconducting properties is exhibited. To understand the mixed state transport properties of type-II superconducting NbN ultrathin films (2D) we measured sheet resistance (RxxM) and Hall resistance (RxyM) of a 5-nm-thick NbN film around Tc (10.75 K) at temperatures 10.40, 10.68, and 10.77 K. Hall resistance (HR) was measured in external out-of-plane and in-plane magnetic fields up to 6 T, using 100 µA and 1 mA driving current in Van der Pauw geometry. The electric field of applied bias and Lorentz force of applied external magnetic field causes a movement of the normal conducting electrons within each fluxoid. The moving fluxoids cause dissipation and generation of Hall voltage. We developed a macroscopic analysis of the Hall resistance arising from fluxoids, to advance the differentiation between dissipating current and superconducting currents in type-II superconductors at Tc. We have extracted the number of normal conducting carriers per fluxoid and areal density and mobility of the fluxoids in dependence on the external magnetic field. This differentiation provides valuable insights into the dissipation mechanisms observed during transport measurements, e.g., after localized heating due to single photon absorption in nanostructured type-II superconductors. Furthermore, the developed macroscopic analysis of Hall resistance of fluxoids shows promising potential for investigating the fundamental aspects of fluxoid-defect interactions in type-II superconductors. Published by the American Physical Society 2024

Impact of Temperature Optimization of ITO Thin Film on Tandem Solar Cell Efficiency.

This study examined the impact of temperature optimization on indium tin oxide (ITO) films in monolithic HJT/perovskite tandem solar cells. ITO films were deposited using magnetron sputtering at temperatures ranging from room temperature (25 °C) to 250 °C. The sputtering target was ITO, with a mass ratio of In2O3 to SnO2 of 90% to 10%. The effects of temperature on the ITO film were analyzed using X-ray diffraction (XRD), spectroscopic ellipsometry, and sheet resistance measurements. Results showed that all ITO films exhibited a polycrystalline morphology, with diffraction peaks corresponding to planes (211), (222), (400), (440), and (622), indicating a cubic bixbyite crystal structure. The light transmittance exceeded 80%, and the sheet resistance was 75.1 Ω/sq for ITO deposited at 200 °C. The optical bandgap of deposited ITO films ranged between 3.90 eV and 3.93 eV. Structural and morphological characterization of the perovskite solar cell was performed using XRD and FE-SEM. Tandem solar cell performance was evaluated by analyzing current density-voltage characteristics under simulated sunlight. By optimizing the ITO deposition temperature, the tandem cell achieved a power conversion efficiency (PCE) of 16.74%, resulting in enhanced tandem cell efficiency.

C54-TiSi2 formation using nanosecond laser annealing of A-Si/Ti/A-Si stacks

Low resistive Ti-based contacts are required to reach the targeted performances of 3D imaging devices. To fulfill this request, the C54-TiSi2 phase appears to be the most efficient. However, in view of monolithic integration, the temperature needed to form C54-TiSi2 must be drastically reduced by at least 100 °C in order to avoid damage in other parts of the device. Indeed, as these 3D imaging devices require the co-integration of Ti and Ni based silicides, it is crucial to develop a thermal treatment which allows to form the C54-TiSi2 phase without agglomerating the NiSi layer (i.e. at temperatures lower than 600 °C). In this work, a three-layer stack made of a Ti layer in between two amorphous Si thin films deposited on (100) Si substrate has been studied. Nanosecond laser annealing (NLA) followed by rapid thermal annealing (RTA) from 500 to 800 °C were performed on those stacks. Sheet resistance and X-Ray Diffraction measurements showed that the C54-TiSi2 phase could be formed with a RTA treatment at a temperature as low as 600 °C in this case. In line with some previous work, this was due to another phase sequence involving the C40-TiSi2 during the laser annealing. The most favorable microstructure to form C54-TiSi2 by a subsequent RTA treatment seemed to be a matrix made of amorphous titanium silicide containing grains of the C40-TiSi2 template phase. This hypothetical microstructure was formed by laser annealing at a lower energy density when layers of amorphous Si were used.

New IEC standards for the measurement of sheet resistance on large-area graphene using the van der Pauw and the in-line four-point probe methods

Graphene has evolved from a scientific research subject to an industrial product, in need of a normative basis for its key control characteristics. Recently two new IEC technical specifications that establish standardized procedures for assessing the sheet resistance RS of monolayer graphene have been published. These new standards, part of the IEC TS 62607-6-xx series, outline protocols for employing two contact methods: i) van der Pauw, and ii) in-line four-point probe. In the following we present and discuss illustrative examples of the scientific experiments designed and performed to inform the standardization process behind the presented standards. In particular we report about the investigation of mechanical contacting of chemical-vapor-deposited monolayer graphene and the measurement of the RS in cm2 area graphene samples with non uniform resistivity distributions. This paper includes an overview of the broader IEC context, detailing the key steps in the development of the standards themselves.

On the mechanism of piezoresistance in nanocrystalline graphite.

Strain sensors are sensitive to mechanical deformations and enable the detection of strain also within integrated electronics. For flexible displays, the use of a seamlessly integrated strain sensor would be beneficial, and graphene is already in use as a transparent and flexible conductor. However, graphene intrinsically lacks a strong response, and only by engineering defects, such as grain boundaries, one can induce piezoresistivity. Nanocrystalline graphene (NCG), a derivative form of graphene, exhibits a high density of defects in the form of grain boundaries. It holds an advantage over graphene in easily achieving wafer-scale growth with controlled thickness. In this study, we explore the piezoresistivity in thin films of nanocrystalline graphite. Simultaneous measurements of sheet resistance and externally applied strain on NCG placed on polyethylene terephthalate (PET) substrates provide intriguing insights into the underlying mechanism. Raman measurements, in conjunction with strain applied to NCG grown on flexible glass, indicate that the strain is concentrated at the grain boundaries for smaller strain values. For larger strains, mechanisms such as grain rotation and the formation of nanocracks might contribute to the piezoresistive behavior in nanocrystalline graphene.

Multi-level phase-change behaviors of Ge2Sb2Te5/Sb7Se3 bilayer films and a design rule of multi-level phase-change films

Multi-level phase-change (MLPC) memory can not only further raise the storage density of high-density phase-change memory, but also have significant applications in neuromorphic computing. However, acquisitions of MLPC materials are very challenging. MLPC is only observed in a small number of phase-change materials and can’t be designed determinately because the mechanism of MLPC emergence has been understood incompletely. Here, we investigate phase-change behaviors of six Ge2Sb2Te5(x nm)/Sb7Se3 (60-x nm) bilayer films with x = 5, 10, 15, 20, 35, and 50. Three-level phase-change memory is observed for five bilayer films with x < 50, but not for one with x = 50, revealing the dependence of MLPC memory on the thickness ratio of two constituent layers composing bilayer films. A parallel resistance model is proposed to describe the measured sheet resistance of bilayer films and can be used to explain the thickness-ratio dependence of three-level phase-change memory very well. Subsequently, a design rule for MLPC memory films is given out unambiguously. Based on the parallel resistance model, MLPC memories are simulated for bilayer and trilayer films. Three-level memory indeed appears in bilayer films only when the design rule is met, confirming the validity of our design rule. Four-level memory is predicted in trilayer films as the design rule is obeyed.

Surface treatment of TaN for sub-2 nm, smooth, and conducting atomic layer deposition Ru films

Atomic layer deposition (ALD) of ruthenium (Ru) is being investigated for next generation interconnects and conducting liners for copper metallization. However, integration of ALD Ru with diffusion barrier refractory metal nitrides, such as tantalum nitride (TaN), continues to be a challenge due to its slow nucleation rates. Here, we demonstrate that an ultraviolet-ozone (UV-O3) pretreatment of TaN leads to an oxidized surface that favorably alters the deposition characteristics of ALD Ru from islandlike to layer-by-layer growth. The film morphology and properties are evaluated via spectroscopic ellipsometry, atomic force microscopy, electrical sheet resistance measurements, and thermoreflectance. We report a 1.83 nm continuous Ru film with a roughness of 0.19 nm and a sheet resistance of 10.8 KΩ/□. The interface chemistry between TaN and Ru is studied by x-ray photoelectron spectroscopy. It is shown that UV-O3 pretreatment, while oxidizing TaN, enhances Ru film nucleation and limits further oxidation of the underlying TaN during ALD. An oxygen “gettering” mechanism by TaN is proposed to explain reduced oxygen content in the Ru film and higher electrical conductivity compared to Ru deposited on native-TaN. This work provides a simple and effective approach using UV-O3 pretreatment for obtaining sub-2 nm, smooth, and conducting Ru films on TaN surfaces.

Broadband Eddy Current Measurement of the Sheet Resistance of GaN Semiconductors.

Although the classical four-point probe method usually provides adequate results, it is in many cases inappropriate for the measurement of thin sheet resistance, especially in the case of a buried conductive layer or if the surface contacts are oxidized/degraded. The surface concentration of dislocation defects in GaN samples is known to challenge this kind of measurement. For the GaN sample presented in this study, it even totally impaired the ability of this method to even provide results without a prior deposition of gold metallic contact pads. In this paper, we demonstrate the benefits of using a new broadband multifrequency noncontact eddy current method to accurately measure the sheet resistance of a complicated-to-measure epitaxy-grown GaN-doped sample. The benefits of the eddy current method compared to the traditional four-point method are demonstrated. The multilayer-doped GaN sample is perfectly evaluated, which will allow further development applications in this field. The point spread function of the probe used for this noncontact method was also evaluated using a 3D finite element model using CST-Studio Suite simulation software 2020 and experimental measurements.

Studying of cadmium oxide/ Aluminium films for optoelectronics: structural, optical and electrical characteristics

In the results of this research, thin films of CdO-Al were produced using the spray pyrolysis (SP) technique. The primary aim was to explore how varying concentrations of aluminum (Al) influence the physical properties of the films. The X-ray diffraction (XRD) analysis confirmed the presence of a cubic crystal structure in the pure CdO films. Additionally, it revealed that the introduction of increased Al doping led to lattice shrinkage and a reduction in lattice parameters. Elevated levels of aluminum (Al) content were correlated with a decrease in crystallite size and an augmentation in lattice strain, as indicated by both scanning electron microscopy (SEM) and X-ray diffraction (XRD) data. Additionally, an X-ray photoelectron spectroscopy (XPS) examination revealed the presence of Al3+ ions within the films. The optical energy gap of CdO-Al films exhibited a slight increase, reaching up to 3% aluminum doping. The analysis of the refractive index dispersion and non-linear refractive index revealed a decreasing trend up to 3% aluminum content, with subsequent fluctuations at higher concentrations. The measurements of sheet resistance demonstrated a noticeable decrease with an increase in aluminum content, specifically up to 3%.

Electrical Characterization of Ultra-Thin Silicon-on-Insulator Films Doped By Means of Phosphorus End-Terminated Polymers

Starting at the 3 nm node, the microelectronics industry is anticipated to transition toward new stacked device architectures, such as gate-all-around field-effect transistors (GAAFETs). In GAAFETs, the gate completely surrounds a silicon nanosheet that serves as a channel, improving the control of the current and performances. The introduction of ultra-scaled stacked 3D devices posed new technological and fundamental problems. In particular, doping techniques commonly used in the mass production of advanced transistors, such as ion implantation or diffusion, present some limitations when applied to these 3D structures. Perego et al.[1] suggested the use of dopant end-terminated polymers as a mild and simple alternative approach to achieve semiconductor doping. Considering the current trend in ultra-scaled microelectronic devices, exploitation of this doping technology requires the demonstration of the possibility to dope thin silicon membranes, achieving a uniform doping concentration throughout the entire film and optimized electrical properties.In this work, ex-situ doping of silicon-on-insulator (SOI) substrates, with device layer thickness ranging from 6 to 70 nm, is performed by using poly(methylmetachrylate) polymers end-terminated with a P containing moiety (PMMA-P), following a procedure described in our previous works.[1,2] Accordingly, a phosphorus δ-layer is created at the interface between a SiO2 capping layer and the underlying Si device layer. Drive-in of the P atoms is performed by annealing the samples in a RTP system at temperatures ranging from 900 to 1200 °C in N2 atmosphere. Annealing time is selected to inject a constant P dose of ∼ 1 x 1013 cm-2 into the SOI substrate, achieving a uniform dopant concentration, as verified by ToF-SIMS measurements. Sample resistivity (ρ), carrier concentration (ne ) and mobility (μ) are determined through sheet resistance and Hall measurements in van der Pauw configuration.Figure 1 shows the results of the electrical and compositional measurements obtained on SOI samples with 30 nm thick device layer as a function of the drive-in temperature. An average activation rate (ηa) above 95% is observed at room temperature in the samples annealed at 1000 °C, indicating full activation of the injected dopants. In the temperature range considered, the mobility is almost constant and is perfectly compatible with values reported in the literature for bulk Si,[3]as shown in the inset. Moreover, the low temperature (5-300 K) electrical characterization indicates that the evolution of ρ, ne and μ values with temperature is consistent with those reported for a P doped bulk Si.[3]Figure 2 shows the results of the electrical and compositional measurements obtained on SOI samples with device layer thickness ranging from 6 to 70 nm upon drive-in of the P dopants at 1000 °C for 100 s. When decreasing the thickness of the device layer, P concentration progressively increases above 1019 atoms/cm3, suggesting that the capping SiO2 film and the buried oxide act as diffusion barrier for P atoms injected into the device layer. ηa well above 80% are achieved for the SOI substrates with device layer thickness greater than 10 nm. However, ηa drops below 10% when further decreasing the thickness of the device layer. A similar reduction of the activation rates was observed in silicon nanowires by Bj ö rk et al.[4]Interestingly, in extremely-thin SOI samples, donor deactivation is correlated to an increase in electron mobility with computed values even greater than those reported for a bulk Si[3], as shown in the inset of Figure 2. Figure 3 shows the relative electron mobility variation as a function of the ratio between the thickness and the average distance between donors for SOI samples annealed at 900 and 1000 °C. The computed values are perfectly compatible with those reported by Kadotani et al.[5] Their model suggests that the enhanced electron mobility observed in heavily doped extremely-thin SOI is caused by the transition from 3D to almost 2D conduction, which results in the reduction of the Coulomb scattering due to the lower number of neighbor donor ions.In conclusion, an experimental study of the doping of ultra-thin SOI by means of phosphorus end-terminated polymers, demonstrates effective doping of silicon with extremely high activation rates of the dopants. Significant deactivation of P atoms and extremely high electron mobility are observed when decreasing the thickness of the device layer below 20 nm where bulk conducting properties transitioned to confinement related phenomena.[1] M.Perego et al., ACS Nano 12 (2018) 178-186.[2] M.Perego et al., J.Mater.Chem.C 8 (2020) 10229-10237.[3] S.M.Sze, K.K.Ng, Physics of Semiconductor Devices (2006) 5-75.[4] M.T.Björk et al., Nature Nanotechnology 4 (2009) 103-107.[5] N.Kadotani et al., Journal of Applied Physics 110 (2011) 034502. Figure 1

Influence of oxygen on the optical and electrical properties of magnetron-sputtered indium tin oxide thin films at ambient temperature

Indium Tin Oxide (ITO) thin films are commonly used as transparent conductive layers in the production of solar cells. ITO films are typically heat-treated at temperatures exceeding 200 °C after magnetron sputtering to optimize the physical, optical, and electrical characteristics for photovoltaic devices. This high temperature heating procedure greatly limits the use of potential substrates, particularly those comprised of low-temperature-rated polymers. Herein, we examine the physical, optical, and electrical transport effects of oxygen:argon plasmas during radio frequency magnetron sputtering of ITO on glass and flexible polymer surfaces without subsequent heat treatment. ITO thin films were characterized via sheet resistance testing, UV–Vis spectroscopy, X-ray diffraction, and scanning electron microscopy imaging. Sheet resistance measurements revealed an increase in surface resistance with increasing oxygen concentration during sputtering. UV–Vis optical transmittance measurements demonstrated an improvement in optical transmittance with an increase in oxygen concentration reaching a maximum transmittance at an oxygen concentration of 1-2%. Most importantly, it was discovered that producing bilayers of ITO with pure argon sputtered plasmas followed by oxygen:argon plasmas produced ITO thin films with suitable resistance and transmittance without the need for high temperature post annealing. These results highlight a methodology for the deposition of ITO thin films on temperature sensitive substrates for flexible photovoltaics and low-cost module production.

Laser-Induced Graphene Formation on Polyimide Using UV to Mid-Infrared Laser Radiation

Our study presents laser-assisted methods to produce conductive graphene layers on the polymer surface. Specimens were treated using two different lasers at ambient and nitrogen atmospheres. A solid-state picosecond laser generating 355 nm, 532 nm, or 1064 nm wavelengths and a CO2 laser generating mid-infrared 10.6 µm wavelength radiation operating in a pulsed regime were used in experiments. Sheet resistance measurements and microscopic analysis of treated sample surfaces were made. The chemical structure of laser-treated surfaces was investigated using Raman spectroscopy, and it showed the formation of high-quality few-layer graphene structures on the PI surface. The intensity ratios I(2D)/I(G) and I(D)/I(G) of samples treated with 1064 nm wavelength in nitrogen atmosphere were 0.81 and 0.46, respectively. After laser treatment, a conductive laser-induced graphene layer with a sheet resistance as low as 5 Ω was formed. Further, copper layers with a thickness of 3–10 µm were deposited on laser-formed graphene using a galvanic plating. The techniques of forming a conductive graphene layer on a polymer surface have a great perspective in many fields, especially in advanced electronic applications to fabricate copper tracks on 3D materials.

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.

In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction measurements, and high-resolution transmission electron microscopy. According to X-ray diffraction studies, the films exhibit epitaxial growth, indicating a good in-plane alignment. Furthermore, the films demonstrate uniform thickness on large areas, as confirmed by Raman spectroscopy. The lateral electrical current transport of the MoS2 grown on sapphire was investigated by temperature (T)-dependent sheet resistance and Hall effect measurements, showing a high n-type doping of the semiconducting films (ns from ~1 × 1013 to ~3.4 × 1013 cm-2 from T = 300 K to 500 K), with a donor ionization energy of Ei = 93 ± 8 meV and a mobility decreasing with T. Finally, the vertical current injection across the MoS2/GaN heterojunction was investigated by means of conductive atomic force microscopy, showing the rectifying behavior of the I-V characteristics with a Schottky barrier height of ϕB ≈ 0.36 eV. The obtained results pave the way for the scalable application of PLD-grown MoS2 on GaN in electronics/optoelectronics.

Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films.

Characterization of thermoelectric transport properties for temperature sensing, cooling, and energy harvesting applications is necessary for a reliable device performance in progressively minimized computer chips. In this contribution, we present a fully automated thermovoltage and sheet resistance measurement setup, which is calibrated and tested for the production of silicon- and silicon-germanium-doped as well as silicide complementary metal-oxide-semiconductor-compatible thin films. A LabVIEW-programmed software application automatically controls the measurement and recording of thermovoltages at individually defined temperature set points. The setup maps average temperature and temperature differences simultaneously in the regime from 40 to 70 °C. The Seebeck coefficient calculated by means of the inversion method was used to eliminate the offset voltage influence. Finally, we present and discuss the Seebeck coefficient as well as the sheet resistance for application-specific different temperature set points of several doped poly-Si, poly-SiGe, and silicides.

Comparison of the Optical Properties of Different Dielectric Materials (SnO2, ZnO, AZO, or SiAlNx) Used in Silver-Based Low-Emissivity Coatings

This work analyzed and compared the optical and photoenergetic properties of low-emissivity coatings made from various dielectric materials deposited through magnetron sputtering following a systematic, comparable method. Different multilayer structures of silver-based low-emissivity coatings were studied using SnO2, ZnO, SiAlNx, and aluminum-doped zinc oxide (AZO, which is inherently a semiconductor, but it fulfils an optical dielectric function in this type of structure). The properties of the coatings were determined by spectrophotometric and sheet resistance measurements. Coatings with AZO as the dielectric layers obtain the best photoenergetic performance because silver growth is more efficient on AZO. We also studied the effect of ion bombardment on AZO and SiAlNx in an attempt to obtain a better low-emissivity coating, achieving better results when etching the dielectric layer with an ion gun. Regarding the structures’ visible transmission, the oxides produced better transmission results. Based on the above, we concluded that AZO had the best optical and photoenergetic properties in our deposition system, observing, in the best-case scenario, improvements in emissivity from 0.083 with SnO2 to 0.058 with AZO and to 0.052 using an ion beam on AZO and improvements in visible transmission from 81.9% with SnO2 to 86.8% with AZO.

Indium Zinc Tin Oxide Bottom Electrode‐Based Flexible Indoor Organic Photovoltaics with Remarkably High Mechanical Stability

The demand for flexible indoor organic photovoltaic cells (OPVs) is growing dramatically due to their simple and practical use as a powering aid for various electronic gadgets connected to the Internet of Things. Due to the brittleness of inorganic material‐based transparent bottom electrodes and their incompatibility with flexible organic substrates, it is extremely difficult to limit the influence of mechanical stress on the stability of flexible OPV. In this regard, choosing a mechanically stable and highly conductive transparent conducting oxide (TCO) is crucial. Therefore, flexible OPVs are fabricated onto a flexible (polyimide) substrate coated with mechanically stable TCO indium zinc tin oxide (IZTO). Sheet resistance measurements and observations of scanning electron microscope images of IZTO film after 100 000 bending repetitions (bending radius: 5 mm) confirm the ultrahigh mechanical stability of the TCO. The sheet resistance of flexible IZTO electrode layers is increased by 9%, from 17.42 to 19.12 Ω sq−1. In addition, the impact of a large number of bending repetitions on film transmittance is minimal. The OPV shows ≈69% and ≈20% of its initial power conversion efficiency value after 100 000 bending repetitions for 1000 lx LED illumination and 1 sun conditions, respectively.

Laser-Induced Graphene in Polyimide for Antenna Applications

Laser-induced graphene (LIG) has gained considerable attention recently due to its unique properties and potential applications. In this study, we investigated using LIG in polyimide (PI) as a material for antenna applications. The LIG-−PI composite material was prepared by a facile picosecond laser (1064 nm) irradiation process, which resulted in a conductive graphene network within the PI matrix. Furthermore, LIG formation was confirmed by Raman spectroscopy and sheet resistance measurements. Finally, a patch antenna from LIG with 2.45 GHz microwaves was simulated, produced and tested. These findings suggest that LIG−PI composites have great potential for use in high-frequency electronic devices and can provide a new avenue for the development of flexible and wearable electronics.

Crystallization of Copper Films on Sapphire Substrate for Large-Area Single-Crystal Graphene Growth.

Chemical vapor deposition synthesis of graphene on polycrystalline copper substrates from methane is a promising technique for industrial production and application. However, the quality of grown graphene can be improved by using single-crystal copper (111). In this paper, we propose to synthesize graphene on epitaxial single-crystal Cu film deposited and recrystallized on a basal-plane sapphire substrate. The effect of film thickness, temperature, and time of annealing on the size of copper grains and their orientation is demonstrated. Under optimized conditions, the copper grains with the (111) orientation and a record size of several millimeters are obtained, and the single-crystal graphene is grown over their entire area. The high quality of synthesized graphene has been confirmed by Raman spectroscopy, scanning electron microscopy, and the sheet resistance measurements by the four point probe method.

The catalytic, sensory and electrical properties of GO, PI and PLLA implanted by low-energy copper ions

In this work, we focused on ion beam modification and doping of graphene oxide (GO), polylactic acid (PLLA) and polyimide (PI) by low-energy Cu ions for a study of catalytic, sensory and electrical properties. We implanted the GO and polymer samples with 20 keV Cu ions with three implantation fluences from 3.75 × 1012 cm−2 to 1.0 × 1016cm−2. As follows, the elemental composition and structural changes were studied using Raman spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR), X-ray Photoelectron Spectroscopy (XPS), Rutherford Back-scattering Spectroscopy (RBS) and Elastic Recoil Detection Analysis (ERDA). The surface morphology was analysed using Atomic Force Microscopy (AFM). The electrical properties of prepared structures were characterized by 2-point sheet resistivity measurement and the sensory properties were analysed in an atmospheric chamber and compared with BME280 combined humidity/temperature/pressure sensor. The photo-catalytic properties were studied by Rhodamine-B disintegration under UV light. Ion beam implantation has been applied successfully to the functionalization of used samples. The electrical conductivity increased with increasing Cu ion fluence. The GO and PI demonstrated effective sensory and photo-catalytic performance and the best result was achieved for Cu ion fluence of 3.75 × 1012 cm−2.