Mean lifetimes of levels in [sup 28]Al have been measured using the Doppler-shift-attenuation (DSA) method in conjunction with the reaction [sup 2]H([sup 27]Al,[ital p])[sup 28]Al. The lifetime values were determined for 26 bound levels below the excitation energy of 6.32 MeV. The lifetimes of eight levels are reported for the first time. The targets were prepared by implanting [sup 2]H into Si and [sup 20]Ne-implanted Au substrates. Computer simulations with the Monte Carlo method and experimental stopping power were used in the DSA analysis. Measured mean lifetime values are compared with predictions of the universal [ital sd]-shell model.