Mean Barrier Height Research Articles

Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes

The forward and reverse bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (metal-insulator-semiconductor) type Schottky diodes (SDs) were measured in the temperature range of 200–400 K. Evaluation of the experimental I-V data reveals a decrease in ΦB0 and Rs but an increase in n, with a decrease in temperature. To explain this behavior of ΦB0 with temperature, we have reported a modification which included n and the tunneling parameter αχ1/2δ in the expression of reverse saturation current I0. Thus, a corrected effective barrier height ΦB eff(I-V) vs T has a negative temperature coefficient (α≈−5×10−4 eV/K), and it is in good agreement with α=−4.73×10−4 eV/K of Si band gap. Such behavior of Rs estimated from Cheung’s method could be expected for semiconductors in the temperature region, where there is no carrier freezing out, which is non-negligible at low temperatures. Also, there is a linear correlation between ΦB0(I-V) and n due to the inhomogeneities of the barrier heights (BHs). The conventional activation energy (Ea) plot exhibits nonlinearity below 320 K with the linear portion corresponding to Ea of 0.275 eV. An A∗ value of 1.45×10−5 A cm−2 K−2,which is much lower than the known value of 32 A cm−2 K−2 for p-type Si, is determined from the intercept at the ordinate of this experimental plot. Such behavior is attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution (GD) of BHs due to BH inhomogeneities that prevail at the interface. We attempted to draw a ΦB0 vs q/2kT plot to obtain evidence of a GD of the BHs, and the values of Φ¯B0=1.136 eV and σ0=0.159 V for the mean BH and standard deviation at zero bias have been obtained from this plot. Therefore, the modified ln (I0/T2)−q2σ02/2k2T2 vs q/kT plot gives Φ¯B0 and A∗ values of 1.138 eV and 37.23 A cm−2 K−2, respectively, without using the temperature coefficient of the BH. This A∗ value of 37.23 A cm−2 K−2 is very close to the theoretical value of 32 A K−2 cm−2 for p-type Si. Therefore, it has been concluded that the temperature dependence of the forward bias I-V characteristics of the Al/SiO2/p-Si SDs can be successfully explained based on the thermionic emission mechanism with a GD of the BHs.

The distribution of the barrier height in Al–TiW–Pd2Si/n-Si Schottky diodes from I–V–T measurements

The forward and reverse bias current–voltage (I–V) characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes (SBDs) were measured in the temperature range of 300–400 K. The estimated zero-bias barrier height ΦB0 and the ideality factor n assuming thermionic emission (TE) theory show a strong temperature dependence. While n decreases, ΦB0 increases with increasing temperature. The Richardson plot is found to be linear in the temperature range measured, but the activation energy value of 0.378 eV and the Richardson constant (A*) value of 15.51 A cm−2 K−2 obtained in this plot are much lower than the known values. Such behavior is attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution of barrier heights (BHs) due to BH inhomogeneities that prevail at the interface. Also, the ΦB0 versus q/2kT plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and ΦB0 = 0.535 eV and σ0 = 0.069 V for the mean BH and zero-bias standard deviation, respectively, have been obtained from this plot. Thus, the modified ln(I0/T2) − q2σ20/2k2T2 versus q/kT plot gives ΦB0 and A* as 0.510 eV and 121.96 A cm−2 K−2, respectively. This value of the Richardson constant 121.96 A cm−2 K−2 is very close to the theoretical value of 120 A K−2 cm−2 for n-type Si. Hence, it has been concluded that the temperature dependence of the forward I–V characteristics of the Al–TiW–Pd2Si/n-Si Schottky barrier diodes can be successfully explained on the basis of a thermionic emission mechanism with a Gaussian distribution of the BHs.

Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures

In this work, we have investigated the electrical characteristics, such as current–voltage ( I–V) and capacitance–voltage ( C– V) measurements, of identically prepared crystal violet/p-Si Organic/Inorganic (OI) Schottky structures formed by evaporation of organic compound solution to directly p-Si semiconductor substrate. It has been seen that the crystal violet organic dye thin film on the p-Si substrate has exhibited a good rectifying behavior. The barrier heights (BHs) and ideality factors of all devices have been calculated from the electrical characteristics. Although the diodes were all identically prepared, there was a diode-to-diode variation: the effective barrier heights ranged from 0.6 ± 0.1 to 0.8 ± 0.1 eV, and the ideality factor from 1.6 ± 0.4 to 3.5 ± 0.4. The barrier height versus ideality factor plot has been plotted for the OI devices. Lateral homogeneous BH was calculated as a value of 0.7 eV from the observed linear correlation between BH and ideality factor, which can be explained by laterally inhomogeneities of BHs. The values of barrier height and acceptor doping concentration yielded from the reverse bias C– V measurements ranged from 0.7 ± 0.1 to 1.3 ± 0.1 eV and from (4.7 ± 0.8) × 10 14 to (8.1 ± 0.8) × 10 14 cm −3, respectively. The mean barrier height and mean acceptor doping concentration from C– V characteristics has been calculated 1.0 eV and 5.9 × 10 14 cm −3, respectively. It has been seen that the mean BH value of 0.7 eV obtained for the Al/methyl violet/p-Si contact is significantly larger than BH values of the conventional Al/p-Si Schottky diodes. Thus, modification of the interfacial potential barrier for metal/Si diodes has been achieved using a thin interlayer of the methyl violet organic semiconductor; this has been ascribed to the fact that the methyl violet interlayer increases the effective barrier height by influencing the space charge region of Si.

Electrical characteristics and inhomogeneous barrier analysis of aniline green/p-Si heterojunctions

In this study, we identically prepared the aniline green/p-Si organic–inorganic devices (total 27 diodes) formed by direct evaporation of an organic compound solution on to a p-Si semiconductor wafer, and then studied the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of these devices. It was seen that the aniline green organic thin film on the p-Si substrate showed a good rectifying behavior. The barrier heights (BHs) and ideality factors of all devices were extracted from the electrical characteristics. Mean BH and ideality factor were calculated as 0.582 eV and 2.999, respectively from the I–V characteristics. Additionally, the mean barrier height and mean acceptor doping concentration from C–V measurements were calculated as (0.61 ± 0.10) eV and (5.54 ± 0.68) × 1014 cm−3, respectively. The discrepancy in the BH values obtained from I–V and C–V characteristics has been attributed to different nature of the measurements. This can also be due to the existence of the interfacial native oxide and the organic aniline green thin layer between the semiconductor and contacting top metal.

Material Characteristics and Electrical Modeling of Ultra Thin Copper Oxides in ULSI Application

With the highest brilliance synchrotron radiation X-ray (SPring-8) and TEM observations, Cu oxides ranged 2-nm to 10-nm in thickness formed on sputtered Cu has been evaluated. For the plasma-assisted Cu oxide, weak Cu2O and/or CuO X-ray diffraction pattern is observed, while no diffraction pattern in native and thermally (170°C) grown oxides. Those native and thermal oxides show Cu2O coordination observed by XANES (X-ray Absorption Near Edge Structure) method. This suggests that Cu oxide formed at low temperatures consists of stoichiometric Cu2O in an amorphous structure. According to the Fowler-Nordheim (F-N) current emission model, the current emission taking place at Cu2O decreases with increasing of the oxide thickness and its mean barrier height (φB) in the MIM band structure. In case of current density at 106A/cm2 of 1V, it is estimated that the allowable thickness of Cu oxides is approximately 1.5-nm at 1 eV of barrier height.

The behavior of the I-V-T characteristics of inhomogeneous (Ni∕Au)–Al0.3Ga0.7N∕AlN∕GaN heterostructures at high temperatures

We investigated the behavior of the forward bias current-voltage-temperature (I-V-T) characteristics of inhomogeneous (Ni∕Au)–Al0.3Ga0.7N∕AlN∕GaN heterostructures in the temperature range of 295–415K. The experimental results show that all forward bias semilogarithmic I-V curves for the different temperatures have a nearly common cross point at a certain bias voltage, even with finite series resistance. At this cross point, the sample current is temperature independent. We also found that the values of series resistance (Rs) that were obtained from Cheung’s method are strongly dependent on temperature and the values abnormally increased with increasing temperature. Moreover, the ideality factor (n), zero-bias barrier height (ΦB0) obtained from I-V curves, and Rs were found to be strongly temperature dependent and while ΦB0 increases, n decreases with increasing temperature. Such behavior of ΦB0 and n is attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution (GD) of the barrier heights (BHs) at the metal∕semiconductor interface. We attempted to draw a ΦB0 versus q∕2kT plot in order to obtain evidence of the GD of BHs, and the values of Φ¯B0=1.63eV and σ0=0.217V for the mean barrier height and standard deviation at a zero bias, respectively, were obtained from this plot. Therefore, a modified ln(I0∕T2)−q2σ02∕2(kT)2 versus q∕kT plot gives ΦB0 and Richardson constant A* as 1.64eV and 34.25A∕cm2K2, respectively, without using the temperature coefficient of the barrier height. The Richardson constant value of 34.25A∕cm2K2 is very close to the theoretical value of 33.74A∕cm2K2 for undoped Al0,3Ga0,7N. Therefore, it has been concluded that the temperature dependence of the forward I-V characteristics of the (Ni∕Au)–Al0.3Ga0.7∕AlN∕GaN heterostructures can be successfully explained based on the thermionic emission mechanism with the GD of BHs.

Temperature dependence of current–voltage characteristics of Sn/p-Si Schottky contacts

The current–voltage ( I–V) characteristics of Sn/p-Si Schottky barrier diode have been measured over a wide range of temperature (80–300 K) and interpreted on the basis of thermionic emission mechanism by merging the concept of barrier inhomogeneities through a Gaussian distribution function. The analysis has revealed an anomalous decrease of apparent barrier height Φ b0, increase of ideality factor n, and nonlinearity of the activation energy plot at lower temperatures. A Φ b0 versus 1/ T plot has been drawn to obtain evidence of a Gaussian distribution of barrier heights, and values of 0.97 eV and 0.084 V for the mean barrier height Φ ¯ b 0 and standard deviation σ 0 have been obtained, respectively, from this plot. A modified ln( I 0 /T 2)−( q 2 σ 0 2/2 k 2 T 2) versus 1/ T plot gives Φ ¯ b 0 and Richardson constant A** as 0.95 eV and 15.6 A cm −2 K −2, respectively. It can be concluded that the temperature dependent I–V characteristics of the Sn/p-Si Schottky barrier diode can be successfully explained on the basis of a thermionic emission mechanism with Gaussian distribution of the barrier heights. We have also discussed whether or not the junction current has been connected with thermionic field-emission mechanism.

Systematic study of fusion barriers

A possible method is proposed for extracting fusion barriers from measured fusion excitation functions. The obtained fusion barrier distributions are in good agreement with those determined by the method. The characteristics of the fusion barrier distributions, such as the mean barrier heights, the full widths at half maximum as well as the radii of the barriers, are studied systematically. A systematic comparison between the characteristics of the fusion barrier distributions determined by the proposed method and those of empirical barrier distributions based on the nucleus–nucleus potential calculated with Skyrme energy-density functional together with extended Thomas–Fermi approach has been performed for 120 fusion reactions. A nice agreement between them is found. Simultaneously, the influence of the static deformation and the deformation due to excitation of the reaction partners on the reduction of the fusion barriers was investigated for a series of reactions. From the investigation of the deviation of the calculated fusion excitation functions based on different Skyrme interactions from the experimental data, we find that the nucleus–nucleus potential obtained with SkM* can provide a better description of the fusion cross sections at energies near and above the barrier systematically.

Temperature dependence of characteristic parameters of the Au/SnO 2/ n-Si (MIS) Schottky diodes

The variation in electrical characteristics of Au/SnO 2/ n-Si (MIS) Schottky diodes have been systematically investigated as a function of temperature by using forward bias current–voltage ( I– V) measurements. The main diode parameters, ideality factor n and zero-bias barrier height Φ B0, were found strongly temperature dependent and while the zero-bias barrier height Φ B0( I– V) increases, the n decreases with increasing temperature. This behavior has been interpreted by the assumption of a Gaussian distribution of barrier heights due to barrier inhomogenities that prevail at the metal–semiconductor interface. The zero-bias barrier height Φ B0 vs q/(2 kT) plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights, and values of Φ ¯ B 0 = 1.101 eV and σ 0 = 0.158 V for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. Thus a modified ln( I 0/ T 2) − ( q 2 σ 0 2 ) /2 k 2 T 2 vs q/( kT) plot has given mean barrier height Φ ¯ B 0 and Richardson constant ( A *) as 1.116 eV and 127.86 A cm −2 K −2, respectively. The A * value 127.86 A cm −2 K −2 obtained from this plot is in very close agreement with the theoretical value of 120 A cm −2 K −2for n-type Si. Hence, it has been concluded that the temperature dependence of the forward bias I– V characteristics of the Au/SnO 2/ n-Si (MIS) Schottky diode can be successfully explained on the basis of a thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). In addition, we have reported a modification by the inclusion of both n and αχ 0.5 δ in the expression of I 0 to explain the positive temperature dependence of Φ B0 against that of energy band-gap of Si. Thus, the values of temperature coefficient of the effective barrier height Φ Bef(−3.64 × 10 −4 eV/K) is very close agreement with the temperature coefficient of Si band-gap (−4.73 × 10 −4 eV/K).

Electrical properties of CuGaSe2 single crystals and polycrystalline coevaporated thin films

Abstract CuGaSe2 single crystals were grown by iodine vapour transport method, whereas polycrystalline thin films were obtained by coevaporation technique from three sources. The variation of the hole concentration with temperature of CuGaSe2 single crystal in the high temperature region is interpreted assuming thermal activation in the valence band. The density of states effective mass of the holes is deduced. Acceptor and donor concentrations as well as their compensation ratio are reported. The temperature dependence of the hole mobility in valence band is analysed by taking into account several scattering mechanisms of the charge carriers. To account for the temperature dependant conductivity of polycrystalline CuGaSe2 thin film, grain boundary conduction process was suggested. Quantitative values of the mean potential barrier height at grain boundaries and the standard deviation are reported. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Gaussian distribution of inhomogeneous barrier height in Al 0.24Ga 0.76As/GaAs structures

Current–voltage ( I– V) characteristics of Al 0.24Ga 0.76As/GaAs structures have been investigated in the temperature range of 79–400 K. The barrier height Φ B, ideality factor n and density of interface states N ss determined from the forward bias I– V characteristics were found strongly depend on temperature. While the n and N ss decrease, the zero-bias barrier height Φ B0 increases with increasing temperature. This behavior has been interpreted by the assumption of a Gaussian distribution (GD) of barrier heights (BHs) due to the barrier inhomogeneities that prevail at the metal–semiconductor interface. A Φ B0 versus q/2 kT plot was drawn to obtain evidence of GD of BH, and values of Φ ¯ B 0 = 0.788 eV and σ 0=0.091 V for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Furthermore, the mean values of BH Φ ¯ B 0 and the effective Richardson constant A* were obtained as 0.804 eV and 15.8 A/cm 2 K 2, which is close to the theoretical value of 8 A/cm 2 K 2, respectively, by means of the modified Richardson plot, ln( I 0/ T 2)− q 2 σ 0 2 / 2 ( kT ) 2 versus q/ kT plot. Experimental results show that Al 0.24Ga 0.76As/GaAs structures have a good rectifying behavior and the temperature dependence of forward bias I– V characteristics of the Schottky barrier diode (SBD) have been successfully explained based on TE theory with GD of BHs. In addition, the N ss was determined from the forward bias I– V characteristics by taking into account the bias dependence of the effective BH.

Electrostatic force microscopy as a tool to estimate the number of active potential barriers in dense non-Ohmic polycrystalline SnO2 devices

In the present work, electroactive grain boundaries of highly dense metal oxide SnO2-based polycrystalline varistors were determined by electrostatic force microscopy (EFM). The EFM technique was applied to identify electroactive grain boundaries and thus estimate the amount of active grain boundary, which, in the metal oxide SnO2-based varistor, was calculated at around 85%, i.e., much higher than that found in traditional metal oxide ZnO-based varistors. The mean potential barrier height value obtained from the EFM analysis was in complete agreement with the values calculated from the C-V measurements, together with a complex capacitance plane analysis that validates the methodology proposed here.

Barrier-height and bias-voltage-controlled spin-filter effect and tunneling magnetoresistance in full ferromagnetic junctions

Within the framework of the single electron spintronic model, we systematically studied the barrier-height and bias-voltage-controlled spin-filter effect and tunneling magnetoresistance (TMR) in ferromagnetic metal/ferromagnetic insulator/ferromagnetic metal (FM/FI/FM) tunnel junctions. We find that it is the extended quantum-coherence factor of Slonczewski, κL↑2−kL↑kL↓, that physically controls the sign of the zero-bias TMR. This factor is a linear function of the mean barrier height. The zero-bias TMR is positive when the mean barrier is high, and negative when the mean barrier gets low, which agrees well with the experimental results observed in GdOx-barrier junctions. As a cooperative result of the mean barrier and spin-filter effect, a positively or negatively large TMR can be maintained in a rather wide range near the zero bias if the mean barrier of the FI spacer is much higher or much lower. This property is believed to be of practical use in designing spintronic devices. Besides, the TMR can oscillate positively, or negatively, or alternately with the applied voltage within the high bias region, which is different from conventional FM/I/FM tunnel junctions.

Mean barrier height of Pd Schottky contacts on ZnO thin films

We have investigated the temperature dependence of the barrier height of high-quality Pd Schottky contacts on (0001)-oriented ZnO thin films by temperature-dependent current-voltage and capacitance-voltage (CV) measurements. The films have been grown by pulsed-laser deposition. The effective Schottky barrier height ΦB,eff deduced from the current-voltage measurements was evaluated by considering a Gaussian barrier height distribution with a standard deviation σ around a mean barrier height ΦB,m. We determined ΦB,m=(1.16±0.04)eV which agrees well with the value of 1.14eV determined by CV measurements. The standard deviation is determined to be (134±10)meV.

The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes from I–V–T characteristics

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs contacts have been measured in the temperature range of 80–300 K. An abnormal decrease in the experimental BH Φb and an increase in the ideality factor n with a decrease in temperature have been observed. This behaviour has been attributed to the barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the metal–semiconductor interface. The temperature-dependent I–V characteristics of the Au/n-GaAs contact have shown a double Gaussian distribution giving mean barrier heights of 0.967 and 0.710 eV and standard deviations of 0.105 and 0.071 V, respectively. A modified ln(I0/T2) − q2σ2s/2k2T2 versus 1/T plot for the two temperature regions then gives and A* as 0.976 and 0.703 eV, and 13.376 and 8.110 A cm−2 K−2, respectively. Furthermore, a value of −0.674 meV K−1 for the temperature coefficient has been obtained, and the value of −0.674 meV K−1 for the Au/n-GaAs Schottky diode is in close agreement with those in the literature.

Electrical and optical study of Cu(In, Ga)Se 2 co-evaporated thin films

Co-evaporation technique from three sources was used to prepare Cu(In, Ga)Se 2 polycrystalline thin films for photovoltaic conversion. Their conductivity was studied in the range 20–300 K. The grain boundary scattering mechanism is mainly responsible for the diffusion process in the latter materials. In the low temperature region, we interpret the data in terms of Mott law and the analysis is very consistent with the variable range hopping. However, thermoionic emission is predominant at high temperatures. When the conductivity deviates from the classical grain boundary conduction models, inhomogeneity is then considered and parameters such as the standard deviation and the mean potential barrier height are derived. Transmittance measurements yielded band gap values of 1.07 and 1.64 eV for CuInSe 2 and CuGaSe 2, respectively.

Effect of temperature and inhomogeneity on the yield of PtSi–n–Si photodetectors

The temperature dependence of the current-voltage characteristics of a PtSi/Si Schottky detector is investigated between 20 and 300 K, a temperature range that is much wider than what is usually reported in literature. The data is satisfactorily interpreted on the basis of a thermionic emission mechanism across an inhomogeneous barrier. The Schottky barrier inhomogeneities are shown to obey a single Gaussian distribution with a mean barrier height of 0.76 eV and a standard deviation of 30 meV at zero bias. The calculated detector's efficiency, while taking the barrier distribution into account, shows an increase with decreasing temperature that can be considered overall as marginal but becomes much more significant below 60 K and at wavelengths near the cut-off edge.

Electrical properties of ZnO thin films and optical properties of ZnO-based nanostructures

We have grown ZnO thin films and nanopillars using pulsed laser deposition. Semi-insulating and n -conducting layers of various types can be fabricated. High-quality Pd Schottky contacts on the thin films have a high rectification ratio (∼10 4) and are analyzed in detail. The temperature-dependent I – V characteristics can be explained by assuming a lateral fluctuation σ = 134 ± 5 meV of the mean barrier height Φ B , m = 1.16 eV . The dominating shallow donor is found to be Al. A degenerately doped ZnO:Al back-contact allows depletion layer spectroscopy up to 10 MHz. In our thin films, deep donor levels at E C -100 meV (E1) and E C -300 meV (E3) are found. The optical modes in ZnO nanopillars with hexagonal cross-section and various widths are found to be whispering gallery modes (WGM). Experimental spectra from polarization-resolved microphotoluminescence and theoretical simulations agree very closely without adjustable parameters. The comparison of TE and TM modes allows us to determine the birefringence in single nanopillars.

Dynamic mechanical analysis of segmental relaxation in unsaturated polyester resin networks: Effect of styrene content

The effect of styrene content on non-exponential and non-Arrhenius behavior of the α-relaxation of cured unsaturated polyester resins (UPR) was investigated by dynamic mechanical analysis (DMA). To compare the temperature dependence of the relaxation times, the Angell fragility concept was applied to samples with different crosslink densities. Furthermore, the number of structural units per cooperatively rearranging region (CRR) was estimated using random walk model and the modified Adam–Gibbs theory. The results showed that rising styrene content enhanced the crosslink density of the networks, which altered the intensity and broadness of the α-relaxation. The fragility index, a measure of temperature dependence of relaxation time, and the average size of CRR at glass transition region was also increased by styrene content. Therefore, the segmental relaxation in networks with higher crosslink density could be associated with stronger intermolecular coupling. In addition, it was observed that the mean required energy for internal rearrangement of structural units within the CRR decreased as the fragility index increased, while the mean barrier height for repositioning of a CRR in cooperation to its local environment was nearly constant.

Current transport mechanism in Al/Si 3N 4/p-Si (MIS) Schottky barrier diodes at low temperatures

The current–voltage ( I– V) and capacitance–voltage ( C– V) characteristics of metal–insulator–semiconductor (Al/Si 3N 4/p-Si) Schottky barrier diodes (SBDs) were measured in the temperature range of 80–300 K. By using the thermionic emission (TE) theory, the zero-bias barrier height Φ B0 calculated from I– V characteristics was found to increase with increasing temperature. Such temperature dependence is an obvious disagreement with the negative temperature coefficient of the barrier height calculated from C– V characteristics. Also, the ideality factor decreases with increasing temperature, and especially the activation energy plot is nonlinear at low temperatures. Such behaviour is attributed to Schottky barrier inhomogeneties by assuming a Gaussian distribution of barrier heights (BHs) at interface. We attempted to draw a Φ B0 versus q/2 kT plot to obtain evidence of a Gaussian distribution of the BHs, and the values of Φ Bo = 0.826 eV and α o = 0.091 V for the mean barrier height and standard deviation at zero-bias, respectively, have been obtained from this plot. Thus, a modified ln( I o/ T 2) − q 2 σ o 2/2( kT) 2 versus q/ kT plot gives Φ B0 and Richardson constant A * as 0.820 eV and 30.273 A/cm 2 K 2, respectively, without using the temperature coefficient of the barrier height. This value of the Richardson constant 30.273 A/cm 2 K 2 is very close to the theoretical value of 32 A/cm 2 K 2 for p-type Si. Hence, it has been concluded that the temperature dependence of the forward I– V characteristics of the Al/Si 3N 4/p-Si Schottky barrier diodes can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. In addition, the temperature dependence of energy distribution of interface state density ( N SS) profiles was determined from the forward I– V measurements by taking into account the bias dependence of the effective barrier height and ideality factor.