Abstract
Abstract CuGaSe2 single crystals were grown by iodine vapour transport method, whereas polycrystalline thin films were obtained by coevaporation technique from three sources. The variation of the hole concentration with temperature of CuGaSe2 single crystal in the high temperature region is interpreted assuming thermal activation in the valence band. The density of states effective mass of the holes is deduced. Acceptor and donor concentrations as well as their compensation ratio are reported. The temperature dependence of the hole mobility in valence band is analysed by taking into account several scattering mechanisms of the charge carriers. To account for the temperature dependant conductivity of polycrystalline CuGaSe2 thin film, grain boundary conduction process was suggested. Quantitative values of the mean potential barrier height at grain boundaries and the standard deviation are reported. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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