Maximum Pulse Repetition Rate Research Articles

A compact semiconductor opening swith-based generator with a 300-kV output voltage and up to 2-kHz pulse repetition rate

A compact generator with a semiconductor opening switch (SOS-diode) shaping across resistive load pulses with an amplitude of up to 300 kV, duration of 30–50 ns, and a 300-Hz pulse repetition under uninterrupted operation and up to 2 kHz in a 30-s burst mode is described. The generator contains a thyristor charging device, magnetic compressor, and inductive storage with a semiconductor opening swith based on SOS-diodes. The average output power at a maximum pulse repetition rate and a 250kV-voltage is 16 kW. The overall dimensions of the generator are 0.85×0.65×0.42 m, the weight is about 115 kg.

CuBr laser with a pulse repetition rate up to 300 kHz

A maximum pulse repetition rate of 300 kHz was obtained experimentally with a CuBr laser by employing a gas-discharge tube 1.4 cm in diameter and a TGU 1-5/12 tasitron as a switch.

High-energy multispike operation of an Nd laser with a passive polymer Q-switch

Repetitively pulsed operation with a peak output power up to 2 MW and an energy of a train of nanosecond pulses ~ 12 J were achieved in an yttrium aluminate laser with passive polymer Q-switches based on organic dyes. Variation of the initial switch transmittance made it possible to vary the pulse (spike) duration in the range 28 — 90 ns. The maximum pulse repetition rate in a train was 325 kHz when the Q-switching efficiency was 94%.

Modeling and experiments of waveform effects on oxide charging in plasma immersion ion implantation [MOS ICs

An analytical model of the time-dependent currents of a plasma allows the determination of the physical mechanisms and dependencies of charging damage in Plasma Immersion Ion Implantation (PIII). From the model, we determine that the plasma requires several ms to equilibrate after the application of an implantation voltage pulse. Although the individual pulses only change the surface potential by a fraction of a volt, the long equilibration time means that the pulse repetition rate perturbs the time-averaged surface potential. A physical relation describing the dependence of the time-averaged surface potential on plasma and voltage bias parameters predicts that a shorter pulse width, lower electron temperature, and rectangular pulse shape maximizes the allowable implantation rate and minimizes the charging damage. For a given pulse shape and plasma condition, a maximum pulse repetition rate exists. Beyond this threshold frequency, the oxide fails because the oxide field exceeds its breakdown value. Experimental results corroborate the simulation's predictions, showing the dependence of the pulsing repetition rate on charging damage.

Megahertz-repetition-rate Nd:glass fiber laser

Stable trains of 100-200-ns-long pulses are obtained at 0.46-1.06-MHz repetition rates in a Nd:glass fiber laser by driving large-amplitude relaxation oscillations at or below their resonance. Numerical simulations agree qualitatively with temporal profiles of the output power. We show that the maximum pulse-repetition rate of a relaxation-oscillation laser increases as the square root of pump power at low P and that its theoretical upper limit is close to the pulse rate of a mode-locked laser.

Electronic design of a cochlear implant for multichannel high-rate pulsatile stimulation strategies

A new electronic design for an eight-channel cochlear implant for high-rate pulsatile stimulation strategies is presented. Symmetric biphasic current pulses can be generated up to a maximum pulse repetition rate of about 12 kpulses/s. The stimulation pulse amplitude can be selected within the range of 1.5 /spl mu/A-1.5 mA. The implant contains a single mixed analog/digital CMOS-ASIC for data synchronization and stimulus generation. Stimulation signals are applied via a monopolar intracochlear multielectrode array. Output capacitors are employed for safety reasons. A back-telemetry system for measuring electrode voltages and the implant supply voltage is incorporated. Data and power are transcutaneously transferred to the implant, using a single rf-channel. The overall data rate is 400 kb/s.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

The role of excitation parameters in high repetition-rate N2-TE lasers

We have studied the effects of decreasing the excitation duration on the pulse-repetition-rate (PRR) capabilities of a low-pressure (P<200 Torr) N2-TE laser. It was found that maximum PRR increases with decreasing duration of the discharge current. PRR as high as 1000 Hz has been obtained in the sealed-off non-flowing regime of laser operation. These findings are adequately explained by the time dependence of the arc-discharge formation.

Design of an atom-probe high voltage pulser

An atom-probe HV pulser with a maximum pulse repetition rate of 182 Hz has been designed. When pulsing is turned on the maximum output pulse amplitude is 2.85 kV, corresponding to a charging voltage of 5.7 kV. When pulsing is turned off the maximum charging voltage is 6.1 kV. It should be possible to increase further both the maximum pulse amplitude and the maximum frequency using known techniques.

Design of an atom-probe high voltage pulser

Abstract An atom-probe HV pulser with a maximum pulse repetition rate of 182 Hz has been designed. When pulsing is turned on the maximum output pulse amplitude is 2.85 kV, corresponding to a charging voltage of 5.7 kV. When pulsing is turned off the maximum charging voltage is 6.1 kV. It should be possible to increase further both the maximum pulse amplitude and the maximum frequency using known techniques.

System of IC-modules of nanosecond electronics with computer control in the CAMAC system

In this paper we describe four digitally controlled CAMAC modules: (1) a fast shaper with threshold, delay and output pulse width adjustment, (2) a dual delay box, (3) a multifunction logic unit, and (4) a 24-channel generator for firing light diodes. The maximum pulse repetition rate of the modules is approximately 100 MHz.

Buffer gas effects in a rapidly pulsed copper vapor laser

In double-pulse experiments with a small copper vapor laser, the choice of buffer gas significantly affected several laser characteristics, including the maximum practical pulse repetition rate. Of the gases tested, neon exhibited the best overall performance, and showed no pulse degradation for pulse intervals as short as 50 μs.

Maximum pulse repetition rate for an injection laser

Maximum pulse repetition rate for an injection laser