Maximum Magnetoresistance Research Articles

Room temperature spin injection study across semi-crystalline PVDF-HFP thin films in PVDF-HFP/NiFe bilayers and Ag/(NiFe or Co)/PVDF-HFP/NiFe spin valves

Spin injection across 160 nm thick semi-crystalline Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) is methodically investigated at room temperature in PVDF-HFP/NiFe bilayers and Ag/(NiFe or Co)/PVDF-HFP/NiFe vertical organic spin valves (OSVs) using both the co-planar waveguide ferromagnetic resonance (CPW-FMR: 7-35 GHz) and magnetoresistance (MR) techniques. The structural and microstructural characteristics of PVDF-HFP reveal the formation of mixed non-ferroelectric alpha and ferroelectric beta phases. The spin injection due to the transfer of angular momentum in PVDF-HFP/NiFe is quantified by measuring the spin-mixing conductance (g↑↓) and the enhancement in Gilbert damping (α) parameters from CPW-FMR data. A significant increase inαof 26% andg↑↓of (2.72 ± 0.45) × 1019m-2highlights the efficient spin injection into the PVDF-HFP spacer layer. Further, the MR in OSV structures reveals a room temperature spin injection with a maximum MR of 0.278 ± 0.006% for Ag/Co/PVDF-HFP/NiFe and 0.349 ± 0.039% for the Ag/NiFe/PVDF-HFP/NiFe devices. Furthermore, the spin injection processes are discussed w.r.t to bias voltages, interfaces and microwave frequencies.

Spin-transport across semi-crystalline polyvinylidene fluoride thin films in Ta/Co/PVDF/NiFe pseudo spin-valve devices

Room temperature magnetoresistance (MR) across semi-crystalline polyvinylidene fluoride (PVDF) thin films in Ta(2 nm)/Co(15 nm)/PVDF/NiFe(28 nm) pseudo-spin-valve devices (PSVs) are systematically investigated by varying PVDF thicknesses from 80 − 230 nm and applied bias voltages up to 100 mV. NiFe, Ta/Co magnetic bottom and top electrodes, and PVDF thin films are deposited by DC magnetron sputtering and spin-coating methods. The structural, microstructural, and magnetic natures have been evaluated using grazing incidence X-ray diffraction, atomic force microscopy, and magneto optic kerr effect systems. Electrical characteristics reveal a maximum MR of ∼0.25 % at 60 mV bias voltage across PVDF-80 nm and ∼0.08 % across PVDF-230 nm & PVDF- 120 nm devices. A constant MR is found across all the devices up to 100 mV applied bias voltages. In addition to the electrical spin injection evaluation, coplanar waveguide ferromagnetic resonance measurements are utilized to validate the spin injection into PVDF layers by estimating the Gilbert damping parameters of NiFe and PVDF/NiFe bilayers. Furthermore, low MR in PSVs is discussed with the parallel spin-dependent conducting channels corresponding to PVDF’s amorphous, alpha, and beta crystalline phases.

Endless Dirac nodal lines and high mobility in kagome semimetal Ni3In2Se2 : a theoretical and experimental study

Kagome-lattice crystal is crucial in quantum materials research, exhibiting unique transport properties due to its rich band structure and the presence of nodal lines and rings. Here, we investigate the electronic transport properties and perform first-principles calculations for Ni3In2Se2kagome topological semimetal. First-principles calculations of the band structure without the inclusion of spin-orbit coupling (SOC) shows that three bands are crossing the Fermi level (EF), indicating the semi-metallic nature. With SOC, the band structure reveals a gap opening of the order of 10 meV.Z2index calculations suggest the topologically nontrivial natures (ν0;ν1ν2ν3) = (1;111) both without and with SOC. Our detailed calculations also indicate six endless Dirac nodal lines and two nodal rings with aπ-Berry phase in the absence of SOC. The temperature-dependent resistivity is dominated by two scattering mechanisms:s-dinterband scattering occurs below 50 K, while electron-phonon (e-p) scattering is observed above 50 K. The magnetoresistance (MR) curve aligns with the theory of extended Kohler's rule, suggesting multiple scattering origins and temperature-dependent carrier densities. A maximum MR of 120% at 2 K and 9 T, with a maximum estimated mobility of approximately 3000 cm2V-1s-1are observed. Ni3In2Se2is an electron-hole compensated topological semimetal, as we have carrier density of electron (ne) and hole (nh) arene≈nh, estimated from Hall effect data fitted to a two-band model. Consequently, there is an increase in the mobility of electrons and holes, leading to a higher carrier mobility and a comparatively higher MR. The quantum interference effect leading to the two dimensional (2D) weak antilocalization effect (-σxx∝ln(B)) manifests as the diffusion of nodal line fermions in the 2D poloidal plane and the associated encircling Berry flux of nodal-line fermions.

Spin-reorientation driven emergent phases and unconventional magnetotransport in quasi-2D vdW ferromagnet Fe4GeTe2

Non-trivial spin textures driven by strong exchange interaction, magneto-crystalline anisotropy, and electron correlation in a low-dimensional magnetic material often lead to unusual electronic transitions. Through a combination of transport experiments in exfoliated nanoflakes down to 16 layers and first principle calculations, we unravel emergent electronic phases in quasi-2D van der Waals ferromagnet, Fe4GeTe2, possessing ferromagnetic TC ~ 270 K, along with a spin-reorientation transition (TSR ~ 120 K) with the change of magnetic easy axis. Two electronic transitions are identified. The first transition near TSR exhibits a sharp fall in resistivity, followed by a sign change in the ordinary Hall coefficient (R0), together with, maximum negative magnetoresistance (MR) and anomalous Hall conductivity. Another unusual electronic transition, hitherto unknown, is observed near ~ 40–50 K (TQ), where R0 again changes sign and below which, the resistivity shows a quadratic temperature dependence, and MR becomes positive. An analysis of the experimental data further uncovers the role of competing inelastic scattering processes in anomalous magnetotransport behavior. The density-functional theory based first-principle calculations unveil two possible magnetic phases, followed by a low-energy model Hamiltonian which captures the essence of these phases as well as explains the observed magnetotransport behavior. Thus, we demonstrate an interplay between magnetism and band topology and its consequence on electron transport in Fe4GeTe2, important for spintronic applications.

Room-temperature spin-valve devices without spacer layers based on Fe3GaTe2 van der Waals homojunctions.

In the advancement of spintronic devices, spin valves play a critical role, especially in the sensor and information industries. The emergence of two-dimensional (2D) van der Waals (vdW) magnetic materials has opened up new possibilities for the development of high-performance spin-valve devices. However, the Curie temperature (TC) of most 2D vdW ferromagnets falls below room temperature, resulting in a scarcity of room-temperature spin-valve devices. In this study, we have prepared spin-valve devices without spacer layers based on Fe3GaTe2 vdW homojunctions and observed notable two-state magnetoresistance (MR) from 2 K to room temperature. A maximum MR of 50% surpasses some heterojunctions with spacer-layer structures and it remains 0.6% at room temperature. Furthermore, spin-valve devices exhibit favorable ohmic contact and low operating current as low as 10 nA. These findings demonstrate the enormous potential of Fe3GaTe2-based room-temperature devices and the simplified two-layer structure shows significant prospect in the context of the ongoing trend towards miniaturization of contemporary devices.

Study of the electrophysical and magnetic properties of a Dirac 3D semimetal Cd3As2 with nanogranules of MnAs

We report on the main results of studying the electrical and magnetoresistance (MR) of a composite material consisting of 70 % mol. Dirac semi-metal Cd3As2 and 30 % mol. ferromagnet MnAs at pressures up to 50 GPa in a diamond anvil cell with a «rounded cone-flat» type anvils, as well as magnetization at hydrostatic pressures up to 6 GPa in a toroid-shaped high-pressure cell, both at room temperature and in the temperature range of 180 – 350 K at atmospheric pressure. A mixture of methanol and ethanol in a ratio of 4:1 was used as a pressure transmitting medium. Elemental analysis of Cd3As2 + 30 % mol MnAs composites showed that much of the volume is occupied by the Cd3As2 phase. The proportion of MnAs phase inclusions is less than 5 %. The feature of Cd3As2 + MnAs is the presence of a significant region of non-mixing of the Cd3As2 and MnAs phase melts. A negative MR was revealed with increasing pressure in the entire studied baric zone. The maximum negative MR is observed in the baric zone of 22 – 26 GPa. Further increase in the pressure up to the maximum level result in the appearance of several extrema on the ΔR/R0(P) curve, with negative MR not exceeding 4 %. Upon pressure release from 50 GPa, the baric dependence of ΔR/R0(P) is characterized by an inversion of the MR sign: at pressures around 40 GPa, a negative MR is replaced by a positive MR, and at around 20 GPa, the maximum value of positive MR of ~5.3 % is observed. Signs of the instability of the monoclinic structure of Cd3As2 resulted from its partial decomposition upon decompression were revealed. The results obtained can be used in spintronics when using appropriate composite materials.

Ho6FeSb2: Potential magnetic refrigerant with improved magnetocaloric effect

The magnetic and magnetocaloric characteristics of Ho6FeSb2 have been investigated. The compound crystallizes in Fe2P type hexagonal crystal structure (P6‾2m) with lattice parameters a, b = 8.1046 Å and c = 4.1470 Å. There are 2 second-order ferromagnetic transitions occurring at temperatures T1 = 56 K and T2 = 34 K. The occurrence of subsequent second-order transitions opens the door to hysteresis-free magnetocaloric effect across wide temperature span. The study utilizes different magnetocaloric figures of merit, including isothermal magnetic entropy change, relative cooling power, and temperature-averaged entropy change. The alloy has a maximum relative cooling power of 710 J/kg in 0–5 T, with the temperature-averaged entropy change value being close to the isothermal magnetic entropy change value, making it suitable for hysteresis-free magnetocaloric applications. We have studied the electrical transport properties of the alloy and estimated a maximum magnetoresistance of −9% around T1.

Martensitic Transformation and the Electrical and Magnetic Properties of Ni51 – хMn36 + хSn13 (0 ≤ х ≤ 4) Alloys

The structures and electrical and magnetic properties of Ni–Mn–Sn-based alloys are studied.Changing the crystal lattice type in the course of martensitic transformation is found to be accompanied by substantial changes in the electrical resistivity. It is shown that for all the alloys under study negative magnetoresistanceis observed. The maximum magnetoresistance in a magnetic field of 18 kOe of ≈–45% was foundfor the Ni47Mn40Sn13 alloy.

Spin Transport Properties of MnBi2Te4-Based Magnetic Tunnel Junctions

The van der Waals heterojunctions, stacking of different two-dimensional materials, have opened unprecedented opportunities to explore new physics and device concepts. Here, combining the density functional theory with non-equilibrium Green's function technique, we systematically investigate the spin-polarized transport properties of van der Waals magnetic tunnel junctions (MTJs), Cu/MnBi2Te4/MnBi2Te4/Cu and Cu/MnBi2Te4/h-BN/n⋅MnBi2Te4/Cu (n = 1, 2, 3). It is found that the maximum tunnel magnetoresistance of Cu/MnBi2Te4/h-BN/3⋅MnBi2Te4/Cu MTJs can reach 162.6%, exceeding the system with only a single layer MnBi2Te4. More interestingly, our results indicate that Cu/MnBi2Te4/h-BN/n⋅MnBi2Te4/Cu (n = 2, 3) MTJs can realize the switching function, while Cu/MnBi2Te4/h-BN/3⋅MnBi2Te4/Cu MTJs exhibit the negative differential resistance. The Cu/MnBi2Te4/h-BN/3⋅MnBi2Te4/Cu in the parallel state shows a spin injection efficiency of more than 83.3%. Our theoretical findings of the transport properties will shed light on the possible experimental studies of MnBi2Te4-based van der Waals magnetic tunneling junctions.

Nonlinear Electromagnetic Properties of Thinfilm Nanocomposites (CoFeZr)x(MgF2)100−x

The aim of this work is a comprehensive study of the effect of variable atomic composition and structural-phase state of (CoFeZr)x(MgF2)100−x nanocomposites (NCs) on their nonlinear electronic and magnetic/magneto-optical properties. Micrometer-thick nanocomposite layers on the glass substrates were obtained by ion-beam sputtering of a composite target in the argon atmosphere in a wide range of compositions x = 9–51 at·%. The value of the resistive percolation threshold, xper = 34 at·%, determined from the concentration dependencies of the electrical resistance of NCs, coincides with the beginning of nucleation of metallic nanocrystals CoFeZr in MgF2 dielectric matrix. The absolute value of maximum magnetoresistance of NCs is 2.4% in a magnetic field of 5.5 kG at x = 25 at·%, up to the percolation threshold. Two maxima appear in the concentration dependencies of magneto-optical transversal Kerr effect, one of which, at x = 34 at·%, corresponds to the formation of CoFeZr alloy nanocrystals of a hexagonal structure, and the second one at x = 45 at·% corresponds to the phase transition of nanocrystals from a hexagonal to a cubic body-centered structure. The magnetic percolation threshold in (CoFeZr)x(MgF2)100−x system at xfm = 34 at·%, with the appearance of a hysteresis loop and a coercive force of Hc ≈ 8 Oe, coincides with the resistive percolation threshold xper = 34 at·%. Concentration dependence of the coercive force showed that at low contents of metallic alloy x < 30 at·%, NCs are superparamagnetic (Hc = 0). With an increase of the alloy content, in the region of magnetic and resistive percolation thresholds, NCs exhibit a magnetically soft ferromagnetic character and do not change it far beyond the percolation threshold, with the maximum value of the coercive force Hc < 30 Oe.

Interfacial quantum interference effect and dual magnetoresistance in La0.7Sr0.3MnO3 thin films grown on (001) Si

Transmission electron microscope image and electronic transport of La0.7Sr0.3MnO3 (LSMO) films grown on (001) oriented Si using the sputtered pulsed plasma method confirmed the presence of around 8 nm thick, less dense, and highly resistive LSMO at the interface below the conducting phase. Thicker LSMO films, in addition to metal-insulator transition, show an anomaly around the Curie temperature in temperature-dependent resistivity and magnetoresistance (MR), which is a unique observation. The conduction in these LSMO films at temperatures below low-temperature resistivity minimum is dominated by Kondo-like scattering over electron–electron scattering, established using the phenomenological model. At 20 K, the maximum positive MR is ∼ 12% for the in-plane field, while it is ∼ 7.2% for the out-of-plane field. The maximum negative in-plane MR is found to be ∼ 42.5%, which becomes ∼ 30% when the orientation of the field changes to the out-of-plane direction. The two-dimensional field-dependent change in the magneto-conductance model evidenced the quantum interference effect (QIE). The existence of QIE is associated with magnetic scattering and scattering due to spin–orbit coupling. These results may be used to modulate the electrical properties of future electronic devices and can encourage scientists to explore the multi-functionalities of complex oxides grown on bare Si substrates.

Enhanced low-field positive magnetoresistance and magnetic anisotropy in La0.7Sr0.3MnO3 films grown on (001) Si

Strong anisotropy is observed in the magnetization and magnetoresistance (MR) of a series of La0.7Sr0.3MnO3 (LSMO) films grown on (001) oriented Si using pulsed sputtering plasma. Magnetic anisotropy (MA) of LSMO films is in the order of 106 erg/cm3, comparable to or larger than that of the other heterostructures. Analysis using the Stoner-Wohlfarth model and the density functional theory (DFT) indicates that the crystalline and induced anisotropies are almost compensating with each other, and observed MA is of the same order of shape anisotropy. The rise in MA with the LSMO thickness is attributed to the shape anisotropy and interfacial spin reordering. These LSMO films exhibit positive and negative MR, even though the LSMO is well known for colossal negative MR. The 12.4 nm thick LSMO film shows a maximum ∼7 % in-plane low-field positive MR, which increases to ∼12 % for 20.0 nm thick LSMO, but the variation of out-of-plane positive MR is ∼ ± 0.8 %. The maximum in-plane positive MR occurs at ∼ ± 0.2 kG (switching field), which corresponds to the coercive field. In contrast, the out-of-plane positive MR switching field is relatively higher, ∼ ± 5 kG, 25 times larger than the in-plane switching field. The anisotropy in positive MR and its switching field is due to the strong MA, modulated by the charge transfer-induced interfacial exchange coupling strength, confirmed using the DFT. The MA and anisotropy in MR with the dual sign of MR are intriguing phenomena; their tunability could pave the way for advanced technology in magnetic devices.

Anisotropic magnetoresistance and quantum oscillation in Sb2Te3 single crystal synthesized by a Te-flux method

Topological insulators (TIs) have attracted the widespread attentions due to their unique electronic structures and novel physical properties in past decades. Here, we investigate the magnetoresistance (MR) and Shubnikov-de Haas (SdH) oscillation in topological Sb2Te3. It is found that the angle-dependent MR shows the obvious anisotropy, and the maximal MR reaches ∼220% with the magnetic field rotated in ab plane at 2.5 K and 9 T. The Landau-level fan diagram indicates that Sb2Te3 possesses a nontrivial Berry phase. Comparing the SdH oscillations measured by the magnetic fields rotated in bc and ab planes, we find that the oscillation frequencies are similar, and the Berry phase shift is very slight. The first-principles calculations demonstrate that Sb vacancy can introduce an additional band across the Fermi level. The anisotropy of the Fermi surfaces reveals the anisotropic MR.

Tunnel Magnetoresistance-Based Sensor for Biomedical Application: Proof-of-Concept

The aim of this work was to investigate and prove the possibility of the real-time detection of magnetic nanoparticles (MNPs) distributed in solid material by using a tunnel magnetoresistance-based (TMR) sensor. Following the detection tests of FeCrNbB magnetic nanoparticles distributed in transparent epoxy resin (EPON 812) and measuring the sensor output voltage changes at different particle concentrations, the detection ability of the sensor was demonstrated. For the proposed TMR sensor, we measured a maximum magnetoresistance ratio of about 53% and a sensitivity of 1.24%/Oe. This type of sensor could facilitate a new path of research in the field of magnetic hyperthermia by locating cancer cells.

Giant tunneling magnetoresistance in in-plane double-barrier magnetic tunnel junctions based on MXene Cr2C.

The discovery of two-dimensional (2D) magnetic materials makes it possible to realize in-plane magnetic tunnel junctions. In this study, the transport characteristics of an in-plane double barrier magnetic tunnel junction (IDB-MTJ) based on Cr2C have been studied by density functional theory combined with the nonequilibrium Green's function method. The results showed its maximum tunneling magnetoresistance ratio (TMR) value reached 6.58 × 1010. Its minimum TMR value (3.86 × 106) was also comparable to those of conventional field effect transistors (FETs). Due to its giant TMR and unique structural characteristics, the IDB-MTJ based on Cr2C has great potential applications in magnetic random access memory (MRAM) and logic computing.

Multiple magnetic transitions and magnetocaloric effect of Tb4CoIn alloy

We report on the magnetic, magnetocaloric, thermal, and electrical transport properties of Tb4CoIn alloy, which crystallizes in two phases, Tb6Co2.1In0.8 (space group Immm) and Tb2In0.9Co0.1 (space group P63/mmc), respectively. The alloy reveals three successive magnetic transitions around T1 (163 K), T2 (50 K), and T3 (29 K), respectively, associated with paramagnetic to ferromagnetic transition and two sequential antiferromagnetic transitions. The low-temperature transition T3 follows the first-order magnetic behavior and exhibits the field-induced magnetic transition. Meanwhile, T2 and T1 are found to be second-order in nature which opens a possibility for hysteresis-free magnetocaloric application. The magnetocaloric properties are determined using different magnetocaloric figures of merits such as –ΔSM, ΔTad, RCP, and TEC (10). Additionally, the universal curve behavior in the isothermal entropy change unveils the variation in critical exponents around T1 and T2 due to the magnetic inhomogeneity in the alloy. Besides, the electrical transport properties of the metallic alloy denote the maximum magnetoresistance of −10% around T1.

Magnetoresistance enhancement in a perpendicular (Co/Pt)4/Co/IrMn/(Co/Pt)2/Co structure

We investigate the magnetoresistance (MR) effect and magnetic properties in (Co/Pt)4/Co/IrMn (SFM) and (Co/Pt)4/Co/IrMn/(Co/Pt)2/Co (DFM) structures with (Co/Pt)4/Co and (Co/Pt)2/Co multilayers having a perpendicular magnetic anisotropy. Despite the exchange bias field, the antiferromagnetic IrMn layer itself influences the coercivity (Hc) and MR differently for both types of structures when the IrMn layer is thin. A suppressed Hc and an enhanced MR in the DFM samples are obtained compared with those in the SFM samples. The maximum MR reaches up to (0.6 ± 0.1)% when the IrMn thickness (tIrMn) of the DFM samples varies from 1.5 to ∼5 nm, but the MR value of the SFM samples remains (0.1 ± 0.05)% with the same tIrMn range. The suppressed Hc and the enhanced MR in the DFM samples may be due to the formation of an antiferromagnetic-type contact when large antiferromagnetic domains in the IrMn layer are sandwiched by (Co/Pt)4/Co and (Co/Pt)2/Co multilayers.

Enhancing magnetoresistive features of iron-substituted La0·8Sr0·2MnO3 ceramic manganites

The influence of iron content on the structural, microstructural, magnetic, and electrical-transport features of the ceramic perovskite manganites of the form La0·8Sr0·2Mn1-xFexO3 (x=0.0, 0.05, 0.1, and 0.2) was investigated. A single phase of rhombohedral-distorted structure with an R 3‾ c space group was confirmed for all synthesized ceramic samples. The microstructures of the manganite ceramics were improved by iron substitution. The magnetic and electrical-transport studies show that samples with x=0.0, 0.05, and 0.1 display phase transitions from ferromagnetic to paramagnetic state and metallic to insulating one with increasing temperature. The phase transition temperatures, i.e., Curie temperature, TC, and the resistance transition temperature TMI, are found to be lowered with the increase in the Fe concentration. The temperature coefficient of resistance (TCR) value for the x=0.0 sample is obtained ∼2.16% K−1 and slightly decreased to ∼1.55% K−1 with a 5% Fe substituted sample. As x rise to 0.1, we obtain the maximum TCR value of ∼8.23% K−1. At the same time, the maximum magnetoresistance is obtained as 48.1% at 233 K for the x=0.1 sample. One of the most important findings in this paper is that Fe substitution is very useful for improving magneto-electrical features of the La0·8Sr0·2MnO3 ceramics. Moreover, to better understand the temperature dependence of the electrical resistivity data, the experimental findings were fitted to the equations of several models.

Impact of NiO nano-particles on colossal magneto-resistance of La0.70Ca0.30MnO3 composite

Mixed-valent perovskite manganite has gained considerable research interest due to the increasing demand for energy storage materials. Herein, we show that colossal magneto-resistance properties of La0.7Ca0.3MnO3 (LCMO) can be changed via nickel oxide (NiO) doping. A two-step conventional solid-state reaction method is used to synthesize LCMO-10% NiO composite. The phase purity, structural, electrical (resistivity), and magneto-transport properties of as-synthesized LCMO-10% NiO composite are detailed. NiO doping shifts metal–insulator transition temperature (TMI) from 263 K to 195 K and increases resistivity. The magneto-resistance (MR) measurements showed 10% NiO doping resulted in a maximum MR of ∼ -70.32% at 200 K (near TMI) and 10 T applied magnetic field. However, -0.0849% MR is seen at 290 K (RT) and 0.3 T. The increased ∼ -63.85% MR is found at 100 K and at 10 T, which is comparatively much higher than the pristine LCMO sample. This is due to the addition of NiO in LCMO that improves physical properties (i.e., grain size).

Shape effect of Co nanoparticles on the electric and magnetic properties of Co–SiO2 nanogranular films

Controlling the magnetic anisotropy of nanoparticles is a crucial but challenging step for developing new magnetic functions. Here, we demonstrate a simple approach to controlling the shape of Co nanoparticles in a Co-SiO2 nanogranular film from oblate to prolate spheroid by varying the substrate rotation speed during the tandem fabrication process without changing the film composition (Co:SiO2 = 3:7). Changing the nanoparticles from oblate to prolate, increasing perpendicular length of ellipsoidal nanoparticles, changes the magnetic anisotropy axis of Co–SiO2 nanogranular films from in-plane to out-of-plane, which indicates that the shape anisotropy profoundly affects the magnetic properties. Despite the small tunneling current of a few tens of nanoamperes, a maximum tunneling magnetoresistance effect of up to 2.8 % was realized under an applied magnetic field of 12 kOe in the film plane. Achieving both in-plane and perpendicular spin-dependent tunneling, the anisotropic nanogranular films imply direction controllable tunneling materials as future topological nanoarchitecture. Such high-resistivity nanogranular films with a controllable magnetic nanoparticle shape facilitate the design of new magneto-optical devices with high withstand voltages.