Patchable electrodes are attractive for applications in optoelectronic devices because of their easy and reliable processability. However, development of reliable patchable transparent electrodes (TEs) with high optoelectronic performance is challenging; till now, optoelectronic devices fabricated with patchable TEs have been exhibiting limited performance. In this study, Ag nanowire (AgNW)/poly(methyl methacrylate) (PMMA) patchable TEs are developed and the highly efficient transparent quantum dot light-emitting diodes (QLEDs) using the patchable TEs are fabricated. AgNWs with optimized optoelectronic properties (figure of merit ≈ 3.3 × 10-2) are coated by an ultrathin PMMA nanolayer and transferred to thermal release tapes that enable physical attachment of TEs on the QLEDs without a significant damage to the adjacent active layer. The transparent QLEDs using patchable transparent top electrodes display excellent performance, with the maximum total luminance and current efficiency of 27 310 cd·m-2 and 45.99 cd·A-1, respectively. Fabricated by all-solution-based processes, these QLEDs exhibit the best performance to date among devices adopting patchable top electrodes.