Exploiting the changes in the electronic and vibrational properties accompanying the reduction of dimensionality from 3D to 2D has now become a widely established strategy for developing materials breaking the figure of merit (ZT) ∼ 1 barrier that was experienced in much of the last century. Several studies have suggested the possibility of developing rare earth pnictides into a new family of prospective thermoelectric (TE) materials owing to the strong p-d hybridization in these materials, leading to dispersive band edges and, consequently, high carrier mobilities in these semiconductors. Motivated by the above developments, we explored the electronic and transport properties of three yttrium pnictide monolayers. We present a detailed investigation highlighting the merit of YX (X = N, P, As) monolayer-based materials for TE applications. We found a high power factor for p-type (n-type) YX monolayers in the y-direction (x-direction). This, in conjunction with low to moderate lattice thermal conductivities 3.335, 1.779, and 1.648 Wm-1K-1 of the YN, YP, and YAs monolayers, respectively, at 500 K, leads to high ZTs in optimally doped YN, YAs and YP of 2.02, 1.39, and 1.18. The finding of high TE performance adds further evidence in support of the conjecture that dimensionality reduction in semiconducting materials with strong p-d hybridization can lead to particularly high electrical conductivities (reaches up to 217.84 × 106 Ω-1m-1 for YN), thereby resulting in excellent ZT. The high TE performance of these materials at 500 K suggests the prospect of developing rare-earth-based materials for energy applications.
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