The nonlinear frequency conversion of the up-conversion materials facilitates the conversion of near-infrared (NIR) into visible, which can be detected by the silicon-based detector. However, the low emission intensity of up-conversion materials limited the application. In this paper, a cascade material fusion (CMF) method was proposed to increase the visible emission intensity, which enhanced the imaging of up-conversion silicon-based NIR detectors. The energy level transition mechanism of CMF suggested that the host material (HM) could realize four stimulated emissions under 1550 nm excitation to enhance the up-conversion emission intensity of HM. The silicon-based NIR imaging detectors based on CMF and HM were prepared, and it was observed that the fusion ratio of doped material (DM) and HM has a significant impact on the silicon-based NIR imaging detector upon 1550 nm excitation. The enhanced imaging effect was optimal when the fusion ratio of DM and HM was 0.125, which enhanced about 3.4 times by comparison with the HM detector.
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