Material For Photodetectors Research Articles

Enabling Fast Photoresponse in Hybrid Perovskite/MoS2 Photodetectors by Separating Local Photocharge Generation and Recombination.

Interfacing CH3NH3PbI3 (MAPbI3) with 2D van der Waals materials in lateral photodetectors can suppress the dark current and driving voltage, while the interlayer charge separation also renders slower charge dynamics. In this work, we show that more than one order of magnitude faster photoresponse time can be achieved in MAPbI3/MoS2 lateral photodetectors by locally separating the photocharge generation and recombination through a parallel channel of single-layer MAPbI3. Photocurrent (Iph) mapping reveals electron diffusion lengths of about 20 μm in single-layer MAPbI3 and 4 μm in the MAPbI3/MoS2 heterostructure. The illumination-power scaling of Iph and time-resolved photoluminescence studies point to the dominant roles of the heterostructure region in photogeneration and single-layer MAPbI3 in charge recombination. Our results shed new light on the material design that can concurrently enhance photoresponsivity, reduce driving voltage, and sustain high operation speed, paving the path for developing high-performance lateral photodetectors based on hybrid perovskites.

Enhancement in Photodetector Sensitivity Using All‐Inorganic Perovskite Absorber RbGeI3 and Copper Bismuth Thiocyanate for Superior Charge Transport

This study investigates a photodetector design using the nontoxic, all‐inorganic perovskite material RbGeI3, which is distinguished by its efficient light absorption and excellent photoelectric conversion properties. Incorporating copper bismuth thiocyanate (CBTS) and indium gallium zinc oxide layers, this design enhances charge transport, leading to a photodetector that exhibits exceptional sensitivity across the visible spectrum, along with a peak responsivity of 0.63 A W−1 and a detectivity of 1.37 × 1013 Jones in the near‐infrared (NIR) at 900 nm. The proposed photodetector exhibits wide‐spectrum detection, encompassing both the visible range and the NIR region. These results position RbGeI3 and CBTS as compelling alternatives to traditional photodetector materials such as Si‐Ge, InGaAs, ZnO, and GaN. Validation is achieved through simulations using the SCAPS‐1D simulator, underscoring the potential of perovskite materials for advanced photodetector applications.

High‐Gain and Tunable Linear Photodetection in 2D Tunneling Heterostructures Through Potential Engineering

Abstract2D materials are extensively employed in the fabrication of high‐performance photodetectors owing to their exceptional physical properties. However, most 2D material photodetectors fail to sustain high gain under intense illumination due to the limited intrinsic trap states. Here, an n‐n type Bi2O2Se/SnSe2 van der Waals tunneling heterojunction photodetector with a detection range from visible to near‐infrared (VIS‐NIR) is presented. Under reverse bias, the heterojunction induces a significant electron barrier and hole potential well, ensuring low leakage current and ample hole defect states. Therefore, the photodetector demonstrated a responsivity of 1636.3 AW−1 and a detectivity of 1.39 × 1014 Jones under 660 nm illumination, maintaining a tunable linear dynamic range (LDR) of ≈74.7 dB. This performance is attributed to the hole potential well‐suppressing the recombination of photogenerated carriers, thereby enhancing the device's gain. Furthermore, the tunneling of photogenerated electrons within the heterojunction's space charge region under bias enables rapid response (75.1 and 15.6 µs). In summary, the study introduces a novel strategy to overcome the limited detection capabilities of 2D devices under intense illumination, characterized by outstanding linearity for rapid detection and high‐resolution imaging.

The first principle calculations of band offsets among Cs2(Ti, Zr, Hf)X6 double halide perovskites

This study investigates the band offsets among Cs2(Ti, Zr, Hf)X6 double halide perovskites. Valence band offsets (VBO) and conduction band offsets (CBO) were calculated using density functional theory (DFT) with the Perdew–Burke-Ernzerhof (PBE) functional and the hybrid Heyd–Scuseria–Ernzerhof (HSE) functional, employing the supercell technique. This technique offers greater accuracy and reliability by explicitly calculating the potential differences at the interface. A critical factor influencing the results is the contribution of the dipole potential (VD), which induces shifts in the VBO and CBO by approximately 0.2 to 0.6 eV relative to values predicted by the electron affinity rule. This discrepancy arises from the inclusion of interface-specific effects, such as charge redistribution and polarization. Additionally, the findings indicate that the energy band alignments among these compounds are type-I within the same group of halides, with nearly identical lattice constants for Zr- and Hf-based compounds due to their similar ionic radii. These results provide valuable insights for the design of heterostructures in electronic applications and highlight the potential of Cs2(Ti, Zr, Hf)X6 compounds as efficient materials for solar cells, light-emitting diodes, and photodetectors.

Influence of Temperature on the Performance of Metal Semiconductor Metal Photodetector Fabricated by Pure and Cationic Doped (Mg2+ and Cu2+) SnO2 Nanoparticles

Research based on various temperatures always provides beneficial awareness in the fabrication of a vital photodetector for significant applications. Increasing temperature and including dopants in photodetector materials will influence the functioning of the photodetector. This study included the influence of temperature on pure and doped SnO2 photodetectors. The crystal structure of stannic oxide has been modified by adding cationic dopants, namely Mg2+ and Cu2+, through co-precipitation techniques. Various characterization techniques were employed to examine the impact of Mg2+ and Cu2+ on the Sn4+ lattice. The electrical properties of the materials were studied at different temperatures using the Hall effect. Pure SnO2, Mg-doped SnO2, and Cu-doped SnO2 nanoparticles were synthesised separately and used as photodetectors using fluorine-doped tin oxide film as a conductive medium. The fabricated photodetectors are optimized by current-voltage characteristics at different temperatures. The effects of defects in crystal structure, oxygen vacancies, carrier concentration, and temperature on the photodetectors were studied. Comparative studies of pure and doped SnO2 photodetectors revealed that temperature and crystal defects play a significant role in photoconduction.

High responsivity zero-biased Mid-IR graphene photodetector based on chalcogenide glass waveguide

Graphene’s unique properties have made it a promising material for high-performance photodetectors due to its interesting features including broadband absorption, fast speed, and strong photothermoelectric effect. Here, an optimized waveguide photodetector incorporating double graphene layers with two cores is presented to boost the responsivity (∼twice), at Mid-IR range. The proposed structure operates in the zero-bias regime to eliminate the dark current issue associated with the zero bandgap nature of graphene and leads to lower noise equivalent power. The presented photodetector operating based on split gates to electrostatically induce the p-n junction in graphene channels, operates based on the photothermoelectric effect and provides responsivity, NEP, and 3 dB bandwidth of 6.3 V/W, 0.34 nW/Hz1/2, and 1.54 GHz, respectively for the detection at λ = 5.2 μm. The feasibility of the proposed structure is proved according to recent experimentally demonstrated photodetectors. Hence, the obtained results are reliable, in practice. The study has been accomplished by numerical simulation of mode profiles and solving the heat equation to extract the characteristics of the proposed photodetector. The zero-power consumption and tunability of the proposed structure make it a promising candidate for sensing, industrial, defense, and environmental monitoring applications with high accuracy.

Two-dimensional XYN3 (X=V, Nb, Ta; Y=Si, Ge): Promising optoelectronic materials in photovoltaic photodetectors

Two-dimensional p-type/intrinsic/n-type (p-i-n) homojunction opens up exciting opportunities for the advancement of next-generation electronic and optoelectronic devices. However, it is urgent to explore superior two-dimensional materials for p-i-n homojunction to enhance optoelectronic performance. Herein, the electronic structures, optical properties of monolayer XYN3 (X=V, Nb, Ta; Y=Si, Ge), and the related p-i-n homojunctions are constructed and investigated systematically based on the framework of density function theory and non-equilibrium Green's function calculations. The electronic structures and optical absorption of these stable monolayers reveal that they show semiconductor characteristic with indirect bandgaps of 1.23∼2.13 eV, which possess strong absorption of visible light. The simulations of the p-i-n homojunctions based on these monolayers highlight that VSiN3 and TaSiN3-based p-i-n junctions possess maximum photocurrent densities of 21.43 and 18.48 A/m2, respectively. Moreover, the photoresponses of VSiN3 and TaSiN3-based p-i-n junctions can reach up to 0.61 and 0.55 A/W, respectively, demonstrating that VSiN3 and TaSiN3-based p-i-n junctions could be the ideal candidates for optoelectronic devices. Our work is expected to pave the way for the realization of 2D p-i-n homojunction optoelectronic devices.

Harnessing the synergistic effect of CuO@Fe3O4/n-Si for high-efficiency photodiodes

High-performance photodetectors were fabricated using drop-casting method, employing pure CuO, Fe3O4 and CuO@Fe3O4 nanocomposite (NC). These devices aim to achieve enhanced responsivity (R), photosensitivity (Ps), detectivity (D∗), and external quantum efficiency (EQE). The XRD results indicate that the crystallite size of the CuO@Fe3O4 NC was reduced to around 20 nm, compared to 23 nm for pure CuO and 25 nm for pure Fe3O4. In addition, phase purity and functional groups were corroborated by Raman and FTIR analysis, supporting these findings. The bandgap energy of pure CuO and Fe3O4 was estimated to be around 1.25 and 1.22 eV, respectively, while the CuO@Fe3O4 NC exhibited a lower bandgap energy of 1.13 eV due to the interface between CuO and Fe3O4. Notably, the fabricated CuO@Fe₃O₄/n-Si photodiode exhibited excellent rectification properties under illumination, with an ideality factor (n) of 2.87 and a barrier height (ΦB) of 0.83 eV. The device achieved high Ps of 773.4 %, R of 542.6 mA/W, EQE of 208.7 %, and D∗ of 2.91 × 1012 Jones, demonstrating that the CuO@Fe3O4 NC is the most effective material for photodetection in this study.

Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε-InSe Layers.

2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non-volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε-InSe layers. By first-principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out-of-plane (OOP) polarization only exists in even layer ε-InSe. The ferroelectricity is also demonstrated in ε-InSe-based vertical devices, which exhibit high on-off ratios (≈104) and non-volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3ps) bulk photovoltaic response in the near-infrared band, rendering it a promising material for self-powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.

What can be integrated on the silicon photonics platform and how?

We review the integration techniques for incorporating various materials into silicon-based devices. We discuss on-chip light sources with gain materials, linear electro-optic modulators using electro-optic materials, low-power piezoelectric tuning devices with piezoelectric materials, highly absorbing materials for on-chip photodetectors, and ultra-low-loss optical waveguides. Methodologies for integrating these materials with silicon are reviewed, alongside the technical challenges and evolving trends in silicon hybrid and heterogeneously integrated devices. In addition, potential research directions are proposed. With the advancement of integration processes for thin-film materials, significant breakthroughs are anticipated, leading to the realization of optoelectronic monolithic integration featuring on-chip lasers.

Recent Advances in the A‐Site Cation Engineering of Lead Halide Perovskites

AbstractLead halide perovskite (LHP) have gained considerable research attention for their numerous photoelectric applications attributed to their ease of processability and distinctive photoelectric properties. A‐site cation engineering provides an effective solution to optimize the bandgap further, enhance stability, and improve the photoelectric properties of LHP materials. In this review, an in‐depth examination of the progress achieved in the field of A‐site cation engineering on the structure, properties, synthesis methods, and photoelectric applications of LHP is presented. It is discussed how A‐site cations can change the crystal structure and improve the crystal quality, and how the A‐site cation regulates the bandgap, enhances stability, and promotes effective charge transport. Further, synthesis strategy is presented to regulate the A‐site cation. Subsequently, the applications of A‐site cation‐regulated LHP materials in solar cells, light‐emitting diodes, photodetectors, and lasers are introduced. Finally, challenges that must be overcome to further improve the properties and stability of LHP materials via A‐site cation engineering are highlighted.

Impurity Level-Induced Broadband Photoelectric Response in Wide-Bandgap Semiconductor SrSnO3.

Broadband spectrum detectors exhibit great promise in fields such as multispectral imaging and optical communications. Despite significant progress, challenges like materials instability in such devices, complex manufacturing process, and high cost still hinder their further application. Here, we present a method that achieves broadband spectral detection by impurity-level in SrSnO3. We report over 500 mA/W photoresponsivity at 275 nm (ultraviolet C solar-bind) and 367 nm (ultraviolet A) and ∼60 mA/W photoresponsivity at 532 and 700 nm (visible) with a voltage bias of -5 V. Further transport and photoluminescence results reveal a new phase transition at 88 K, which would significantly affect the impurity level of the La-doped SrSnO3 film, indicating that the broadband response attributes to the impurity levels and mutual interactions. Additionally, the photodetector demonstrates excellent robustness and stability under repeated tests and prolonged exposure in air. These findings show the potential of SrSnO3 as a material for photodetectors and propose a method to achieve broadband spectrum detection, creating new possibility for the development of single-phase, low-cost, simple structure, and high-efficiency photodetectors.

Atomically Precise Chiral Metal Nanoclusters for Circularly Polarized Light Detection

AbstractCircularly polarized light (CPL) detection is of great significance in various applications such as drug identification, sensing and imaging. Atomically precise chiral metal nanoclusters with intense circular dichroism (CD) signals are promising candidates for CPL detection, which can further facilitate device miniaturization and integration. Herein, we report the preparation of a pair of optically active chiral silver nanoclusters [Ag7(R/S‐DMA)2(dpppy)3] (BF4)3 (R/S‐Ag7) for direct CPL detection. The crystal structure and molecular formula of R/S‐Ag7 clusters are confirmed by single‐crystal X‐ray diffraction and high‐resolution mass spectrometry. R/S‐Ag7 clusters exhibit strong CD spectra and CPL both in solution and solid states. When used as the photoactive materials in photodetectors, R/S‐Ag7 enables effective discrimination between left‐handed circularly polarized and right‐handed circularly polarized light at 520 nm with short response time, high responsivity and considerable discrimination ratio. This study is the first report on using atomically precise chiral metal nanoclusters for CPL detection.

Atomically Precise Chiral Metal Nanoclusters for Circularly Polarized Light Detection.

Circularly polarized light (CPL) detection is of great significance in various applications such as drug identification, sensing and imaging. Atomically precise chiral metal nanoclusters with intense circular dichroism (CD) signals are promising candidates for CPL detection, which can further facilitate device miniaturization and integration. Herein, we report the preparation of a pair of optically active chiral silver nanoclusters [Ag7(R/S-DMA)2(dpppy)3] (BF4)3 (R/S-Ag7) for direct CPL detection. The crystal structure and molecular formula of R/S-Ag7 clusters are confirmed by single-crystal X-ray diffraction and high-resolution mass spectrometry. R/S-Ag7 clusters exhibit strong CD spectra and CPL both in solution and solid states. When used as the photoactive materials in photodetectors, R/S-Ag7 enables effective discrimination between left-handed circularly polarized and right-handed circularly polarized light at 520 nm with short response time, high responsivity and considerable discrimination ratio. This study is the first report on using atomically precise chiral metal nanoclusters for CPL detection.

Recent progress of group III-V materials-based nanostructures for photodetection.

Due to the suitable bandgap structure, efficient conversion rates of photon to electron, adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding optical and electrical properties for device design, III-V semiconductors have shown excellent properties for optoelectronic applications, including photodiodes, photodetectors, solar cells, photocatalysis, etc. In particular, III-V nanostructures have attracted considerable interest as a promising photodetector platform, where high-performance photodetectors can be achieved based on the geometry-related light absorption and carrier transport properties of III-V materials. However, the detection ranges from Ultraviolet to Terahertz including broadband photodetectors of III-V semiconductors still have not been more broadly development despite significant efforts to obtain the high performance of III-V semiconductors. Therefore, the recent development of III-V photodetectors in a broad detection range from Ultraviolet to Terahertz, and future requirements are highly desired. In this review, the recent development of photodetectors based on III-V semiconductor with different detection range is discussed. First, the bandgap of III-V materials and synthesis methods of III-V nanostructures are explored, subsequently, the detection mechanism and key figures-of-merit for the photodetectors are introduced, and then the device performance and emerging applications of photodetectors are provided. Lastly, the challenges and future research directions of III-V materials for photodetectors are presented.

Octupole moment driven free charge generation in partially chlorinated subphthalocyanine for planar heterojunction organic photodetectors

In this study, high-performance organic photodetectors are presented which utilize a pristine chlorinated subphthalocyanine photoactive layer. Optical and optoelectronic analyses indicate that the device photocurrent is primarily generated through direct charge generation within the chlorinated subphthalocyanine layer, rather than exciton separation at layer interfaces. Molecular modelling suggests that this direct charge generation is facilitated by chlorinated subphthalocyanine high octupole moment (−80 DÅ2), which generates a 200 meV shift in molecular energetics. Increasing the thickness of chlorinated subphthalocyanine leads to faster response time, correlated with a decrease in trap density. Notably, photodetectors with a 50 nm thick chlorinated subphthalocyanine photoactive layer exhibit detectivities approaching 1013 Jones, with a dark current below 10−7 A cm−2 up to −5 V. Based on these findings, we conclude that high octupole moment molecular semiconductors are promising materials for high-performance organic photodetectors employing single-component photoactive layer.

High-performance photodetection based on black arsenic utilizing the photoconductive effect

Two-dimensional materials have gained considerable attention owing to their exceptional optoelectronic properties. Among these, black phosphorus (BP) stands out for its tunable bandgap and high carrier mobility. However, its application is limited by its instability in the ambient condition. The emergence of black arsenic (b-As), which offers good environmental stability, is a promising 2D material candidate for black phosphorus, exhibiting tremendous potential in optoelectronic properties. Here, we demonstrate a high-performance b-As photodetector based on the dominance of the photoconductive effect, achieving a broadband spectral range from 520 nm to 1550 nm. This self-powered photodetector exhibits a rapid photoresponse speed, with impressive rise and fall times of 118 μs and 115 μs, respectively. Furthermore, characterized by a high responsivity of 1.826 A·W−1 and outstanding external quantum efficiency of 436%, the photodetector demonstrates its potential in IR optical communication and imaging capability. Our study introduces a novel photodetector material with broadband detection, fast photoresponse, high responsivity, and versatility, thereby providing a competitive alternative for the development of advanced optoelectronic devices.

The deposition and the optical characteristics of Cu-based metal halide Cs3Cu2I5 thin film via mist deposition

Cu-based metal halides, such as Cs3Cu2I5, are promising materials for LEDs, photodetectors, and scintillators because of their excellent optical properties, nontoxicity, and high air stability. In this study, we demonstrated the deposition of high-coverage Cs3Cu2I5 thin films using solution-based mist deposition. By adjusting the substrate temperature appropriately, continuous Cs3Cu2I5 thin films were formed. The Cs3Cu2I5 thin films exhibited blue emission under ultraviolet irradiation, with a large Stokes shift of 1.40 eV. Furthermore, they exhibited a high photoluminescence quantum yield of over 80%.

Hyper‐Elastic Deformation via Martensitic Phase Transformation in Cadmium Telluride

Cadmium telluride (CdTe) is a highly promising material for photovoltaics (PV) and photodetectors due to its light‐absorbing properties. However, efficient design and use of flexible devices require a deep understanding of its atomic‐level deformation mechanism. Herein, uniaxial compression deformation of CdTe monocrystalline with varying crystal orientations is investigated using molecular dynamics (MD) with a newly developed machine‐learning force field (ML‐FF), alongside in‐situ micropillar compression experiments. The findings reveal that CdTe bulk deformation is dominated by reversible martensitic phase transformation, whereas CdTe pillar deformation is primarily driven by dislocation nucleation and movement. CdTe monocrystals possess exceptional super‐recoverable deformation along the <100> orientation due to hyper‐elastic processes induced by martensitic transformation. This discovery not only sheds light on the peculiarities observed in micropillar experimental measurements, but also provides pivotal insights into the fundamental deformation behaviors of CdTe and similar II–VI compounds under various stress conditions. These insights are crucial for the innovative design and enhanced functionality of future flexible electronic devices.

Multidimensional photodetection of light fields based on metasurfaces or two-dimensional materials

To completely record a light field, photodetectors should be able to obtain corresponding parameters, including the intensity, position, propagation direction, polarization, wavelength, and time. Recently, metasurface-mediated two-dimensional (2D) material photodetectors have provided solutions for compact and integrated devices to obtain the characteristics of a light field, and most current metasurface-mediated 2D material photodetectors have focused on certain criteria. However, few efforts have been devoted to integrating multidimensional photodetection because of conflicts between the different requirements for distinct parameters and difficulties in fabrication. Problems for multidimensional photodetection are discussed, and the solutions may provide insight into next-generation photodetectors.