This research paper examines the execution of ultra-thin solar cells made from chalcopyrite copper indium gallium diselenide (CIGS). The study presents a new CIGS heterojunction solar cell structure, which includes a Cd-free tungsten disulfide (WS2) buffer layer and poly (3,4-ethylene dioxythiophene) polystyrene sulfonate (PEDOT: PSS) passivation layer. The performance of the solar cell is raised by a back surface field (BSF). A highly recombining rear surface is kept away from minority carriers by a field created by further strong doping at the back. The structure is Ni/PEDOT:PSS/CIGS/WS2/ZnO/Al and has been estimated numerically using the Opto-electrical stimulation of semiconductor layers simulator SCAPS-1D. A high efficiency with a Back surface passivated layer of 25.70 % with Voc of 0.81 V, Jsc of 39.33 mA/cm2, and FF of 79.89 % and without passivated layer efficiency of 17.58 % with Voc of 0.73 V, Jsc of 32.18 mA/cm2, and FF of 74.78 % is found for the intended CIGS-based solar cell with WS2 buffer. The interface between CIGS and WS2 forms a band structure that resembles spikes. This structure is crucial in enhancing the outputs by reducing carrier recombination. The optimal thicknesses for the buffer and CIGS absorber layers are 0.02 μm and 0.2 μm, respectively. These findings help reduce the cost per watt of the solar cell. Fabrication at a mass production scale, minimizing the thickness will have a significant impact on reducing cost.
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