Manipulation Of Excitons Research Articles

Programmable In-Situ Co-Assembly of Organic Multi-Block Nanowires for Cascade Optical Waveguides.

Organic heterostructures (OHs) with multi-segments exhibit special optoelectronic properties compared with monomeric structures. Nevertheless, the synthesis of multi-block heterostructures remains challenging due to compatibility issues between segment parts, which restricts their application in optical waveguides and integrated optics. Herein, we demonstrate programmable in-situ co-assembly engineering, combining multi-step spontaneous self-assembly processes to promote the synthesis of multi-block heterostructures with a rational arrangement of three or more segments. The rational design of segments enables exciton manipulation and ensures optical waveguides and proper output among the multi-segment OHs. This work enables the controllable growth of segments within multi-block OHs, providing a pathway to construct complex OHs for the rational development of future optical applications.

Electric-field tunable Type-I to Type-II band alignment transition in MoSe2/WS2 heterobilayers

Semiconductor heterojunctions are ubiquitous components of modern electronics. Their properties depend crucially on the band alignment at the interface, which may exhibit straddling gap (type-I), staggered gap (type-II) or broken gap (type-III). The distinct characteristics and applications associated with each alignment make it highly desirable to switch between them within a single material. Here we demonstrate an electrically tunable transition between type-I and type-II band alignments in MoSe2/WS2 heterobilayers by investigating their luminescence and photocurrent characteristics. In their intrinsic state, these heterobilayers exhibit a type-I band alignment, resulting in the dominant intralayer exciton luminescence from MoSe2. However, the application of a strong interlayer electric field induces a transition to a type-II band alignment, leading to pronounced interlayer exciton luminescence. Furthermore, the formation of the interlayer exciton state traps free carriers at the interface, leading to the suppression of interlayer photocurrent and highly nonlinear photocurrent-voltage characteristics. This breakthrough in electrical band alignment control, interlayer exciton manipulation, and carrier trapping heralds a new era of versatile optical and (opto)electronic devices composed of van der Waals heterostructures.

Brighter organic scintillators by hot exciton manipulation

Brighter organic scintillators by hot exciton manipulation

Efficient and ultrafast organic scintillators by hot exciton manipulation

Efficient and ultrafast organic scintillators by hot exciton manipulation

Hyperbolic exciton polaritons in a van der Waals magnet

Exciton polaritons are quasiparticles of photons coupled strongly to bound electron-hole pairs, manifesting as an anti-crossing light dispersion near an exciton resonance. Highly anisotropic semiconductors with opposite-signed permittivities along different crystal axes are predicted to host exotic modes inside the anti-crossing called hyperbolic exciton polaritons (HEPs), which confine light subdiffractionally with enhanced density of states. Here, we show observational evidence of steady-state HEPs in the van der Waals magnet chromium sulfide bromide (CrSBr) using a cryogenic near-infrared near-field microscope. At low temperatures, in the magnetically-ordered state, anisotropic exciton resonances sharpen, driving the permittivity negative along one crystal axis and enabling HEP propagation. We characterize HEP momentum and losses in CrSBr, also demonstrating coupling to excitonic sidebands and enhancement by magnetic order: which boosts exciton spectral weight via wavefunction delocalization. Our findings open new pathways to nanoscale manipulation of excitons and light, including routes to magnetic, nonlocal, and quantum polaritonics.

Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes

Nanomaterials exhibit unique optical phenomena, in particular excitonic quantum processes occurring at room temperature. The low dimensionality, however, imposes strict requirements for conventional optical excitation, and an approach for bypassing such restrictions is desirable. Here we report on exciton transfer in carbon-nanotube/tungsten-diselenide heterostructures, where band alignment can be systematically varied. The mixed-dimensional heterostructures display a pronounced exciton reservoir effect where the longer-lifetime excitons within the two-dimensional semiconductor are funneled into carbon nanotubes through diffusion. This new excitation pathway presents several advantages, including larger absorption areas, broadband spectral response, and polarization-independent efficiency. When band alignment is resonant, we observe substantially more efficient excitation via tungsten diselenide compared to direct excitation of the nanotube. We further demonstrate simultaneous bright emission from an array of carbon nanotubes with varied chiralities and orientations. Our findings show the potential of mixed-dimensional heterostructures and band alignment engineering for energy harvesting and quantum applications through exciton manipulation.

Observation of Strong Anisotropic Interlayer Excitons.

Anisotropic interlayer excitons had been theoretically predicted to exist in two-dimensional (2D) anisotropy/isotropy van der Waals heterojunctions. However, experimental results consolidating the theoretical prediction and exploring the related anisotropic optoelectronic response have not been reported so far. Herein, strong photoluminescence (PL) of anisotropic interlayer excitons is observed in a symmetric anisotropy/isotropy/anisotropy heterojunction exemplified by 3L-ReS2/1L-MoS2/3L-ReS2 using monolayer (1L) MoS2 and trilayer (3L) ReS2 as components. Sharp interlayer exciton PL peaks centered at ∼1.64, ∼1.61, and ∼1.57 eV are only observed at low temperatures of ≤120 K and become more pronounced as the temperature decreases. These interlayer excitons exhibit strong anisotropic PL intensity variations with periodicities of 180° as functions of the incident laser polarization angles. The polarization ratios of these interlayer excitons are calculated to be 1.33-1.45. Our study gives new insight into the manipulation of excitons in 2D materials and paves a new way for a rational design of novel anisotropic optoelectronic devices.

Observation of ~100% valley-coherent excitons in monolayer MoS2 through giant enhancement of valley coherence time

In monolayer transition metal dichalcogenide semiconductors, valley coherence degrades rapidly due to a combination of fast scattering and inter-valley exchange interaction. This leads to a sub-picosecond valley coherence time, making coherent manipulation of exciton a highly challenging task. Using monolayer MoS2 sandwiched between top and bottom graphene, here we demonstrate fully valley-coherent excitons by observing ~100% degree of linear polarization in steady state photoluminescence. This is achieved in this unique design through a combined effect of (a) suppression in exchange interaction due to enhanced dielectric screening, (b) reduction in exciton lifetime due to a fast inter-layer transfer to graphene, and (c) operating in the motional narrowing regime. We disentangle the role of the key parameters affecting valley coherence by using a combination of calculation (solutions of Bethe-Salpeter and Maialle-Silva-Sham equations) and a careful choice of design of experiments using four different stacks with systematic variation of screening and exciton lifetime. To the best of our knowledge, this is the first report in which the excitons are found to be valley coherent in the entire lifetime in monolayer semiconductors, allowing optical readout of valley coherence possible.

Ultrafast Optical Control of Polariton Energy in an Organic Semiconductor Microcavity

AbstractThe manipulation of exciton–polaritons and their condensates is of great interest due to their applications in polariton simulators and high‐speed, all‐optical logic devices. Until now, methods of trapping and manipulating such condensates are not dynamically reconfigurable or resulted in an undesirable reduction in the exciton–photon coupling strength. Here, a new strategy for the ultrafast control of polariton resonances via transient modification of an optical cavity mode is presented. Multilayer organic semiconductor microcavities that contain two absorbers are constructed: one strongly‐coupled to the cavity photon mode and one that is out‐of‐resonance. By selectively exciting the out‐of‐resonance absorber using ultrashort laser pulses, the cavity refractive index is modulated, and fully‐reversible blueshifts of the lower polariton branch by up to 8 meV in sub‐ps timescales with no corresponding reduction in the exciton–photon coupling strength are generated. This work demonstrates the ability to manipulate polariton energy landscapes over ultrafast timescales with important applications in emerging computing technologies.

Electric-Field-Driven Trion Drift and Funneling in MoSe2 Monolayer.

Excitons, electron-hole pairs in semiconductors, can be utilized as information carriers with a spin or valley degree of freedom. However, manipulation of excitons' motion is challenging because of their charge-neutral characteristic and short recombination lifetimes. Here we demonstrate electric-field-driven drift and funneling of charged excitons (i.e., trions) toward the center of a MoSe2 monolayer. Using a simple bottom-gate device, we control the electric fields in the vicinity of the suspended monolayer, which increases the trion density and pulls down the layer. We observe that locally excited trions are subjected to electric force and, consequently, drift toward the center of the stretched layer. The exerting electric force on the trion is estimated to be 102-104 times stronger than the strain-induced force in the stretched monolayer, leading to the successful observation of trion drift under continuous-wave excitation. Our findings provide a new route for manipulating trions and achieving new types of optoelectronic devices.

Photoluminescence manipulation in two-dimensional transition metal dichalcogenides

Two-dimensional transition metal dichalcogenides (TMDCs) have been regarded as an intriguing platform for exploring novel physical phenomena and optoelectronic devices due to their excitonic emission characteristics derived from the atomic thin thickness and reduced dielectric screening effect. Notably, monolayer TMDCs with a direct bandgap exhibiting strong photoluminescence (PL) are promising candidates for the light-emitting devices, while the interlayer excitons in heterostructures hold great potential for the photonic chips and optical communication applications. However, the non-ideal photoluminescent intensity and quality due to the ultrathin thickness and high defect density of experimentally obtained monolayer TMDCs limit the further development for the light-emission applications. Here, we summarize the research progress on the PL manipulation of the excitonic emission in TMDCs, where the PL intensity enhancement and emission wavelength regulation are included. The concept and characteristics of excitons are overviewed firstly, followed by the discussion on the evaluation and characterization of excitonic emission. The state-of-the-art progress on the manipulation of the neutral excitons and interlayer excitons PL are then summarized. Finally, the challenges and prospects are proposed.

39.2: Charge‐Transfer Exciton Manipulation Based on Hydrogen Bond of Iridium (III) Complexes for Highly Efficient Blue OLED

Phosphorescent iridium emitters have played the significant role in the development of organic light-emitting diodes (OLEDs). In contrast to the green- and red-emitting phosphors, the design and synthesis of high-performance blue emitters remains as a major challenge, owing to the fact that the annihilation of long-lived triplet excited states in the emissive layer, such as triplet-triplet annihilation (TTA) and triplet-polaron annihilation (TPA), could lead to the occurrence of chemical bond dissociation, which eventually caused the degradation of the OLEDs. In this work, blue-emitting vacuum-deposited OLEDs based on these iridium complexes have been realized, in which the devices retain a high EQEmax and CE of 22.01 % and 56.54 cd A−1, respectively, and their efficiency roll-off value around 10 % at the high luminescence level of 1000 cd m−2. To our knowledge, the max brightness value of the device is over 50000 cd m−2, which is the brightness record in the blue phosphorescent OLED range.

Nanocavity-induced trion emission from atomically thin WSe2

Exciton is a bosonic quasiparticle consisting of a pair of electron and hole, with promising potentials for optoelectronic device applications, such as exciton transistors, photodetectors and light emitting devices. However, the charge-neutral nature of excitons renders them challenging to manipulate using electronics. Here we present the generation of trions, a form of charged excitons, together with enhanced exciton resonance in monolayer WSe2. The excitation of the trion quasiparticles is achieved by the hot carrier transport from the integrated gold plasmonic nanocavity, formed by embedding monolayer WSe2 between gold nanoparticles and a gold film. The nanocavity-induced negatively charged trions provide a promising route for the manipulation of excitons, essential for the construction of all-exciton information processing circuits.

Room-Temperature Observation of Near-Intrinsic Exciton Linewidth in Monolayer WS2.

The homogeneous exciton linewidth, which captures the coherent quantum dynamics of an excitonic state, is a vital parameter in exploring light-matter interactions in 2D transition metal dichalcogenides (TMDs). An efficient control of the exciton linewidth is of great significance, and in particular of its intrinsic linewidth, which determines the minimum timescale for the coherent manipulation of excitons. However, such a control is rarely achieved in TMDs at room temperature (RT). While the intrinsic A exciton linewidth is down to 7 meV in monolayer WS2 , the reported RT linewidth is typically a few tens of meV due to inevitable homogeneous and inhomogeneous broadening effects. Here, it is shown that a 7.18 meV near-intrinsic linewidth can be observed at RT when monolayer WS2 is coupled with a moderate-refractive-index hydrogenated silicon nanosphere in water. By boosting the dynamic competition between exciton and trion decay channels in WS2 through the nanosphere-supported Mie resonances, the coherent linewidth can be tuned from 35 down to 7.18 meV. Such modulation of exciton linewidth and its associated mechanism are robust even in presence of defects, easing the sample quality requirement and providing new opportunities for TMD-based nanophotonics and optoelectronics.

Nano-spectroscopy of excitons in atomically thin transition metal dichalcogenides

Excitons play a dominant role in the optoelectronic properties of atomically thin van der Waals (vdW) semiconductors. These excitons are amenable to on-demand engineering with diverse control knobs, including dielectric screening, interlayer hybridization, and moiré potentials. However, external stimuli frequently yield heterogeneous excitonic responses at the nano- and meso-scales, making their spatial characterization with conventional diffraction-limited optics a formidable task. Here, we use a scattering-type scanning near-field optical microscope (s-SNOM) to acquire exciton spectra in atomically thin transition metal dichalcogenide microcrystals with previously unattainable 20 nm resolution. Our nano-optical data revealed material- and stacking-dependent exciton spectra of MoSe2, WSe2, and their heterostructures. Furthermore, we extracted the complex dielectric function of these prototypical vdW semiconductors. s-SNOM hyperspectral images uncovered how the dielectric screening modifies excitons at length scales as short as few nanometers. This work paves the way towards understanding and manipulation of excitons in atomically thin layers at the nanoscale.

An Asymmetry Field-Effect Phototransistor for Solving Large Exciton Binding Energy of 2D TMDCs.

The probing of fundamental photophysics is a key prerequisite for the construction of diverse optoelectronic devices and circuits. To date, though, photocarrier dynamics in 2D materials remains unclear, plagued primarily by two issues: a large exciton binding energy, and the lack of a suitable system that enables the manipulation of excitons. Here, a WSe2 -based phototransistor with an asymmetric split-gate configuration is demonstrated, which is named the "asymmetry field-effect phototransistor" (AFEPT). This structure allows for the effective modulation of the electric-field profile across the channel, thereby providing a standard device platform for exploring the photocarrier dynamics of the intrinsic WSe2 layer. By controlling the electric field, this work the spatial evolution of the photocurrent is observed, notably with a strong signal over the entire WSe2 channel. Using photocurrent and optical spectroscopy measurements, the physical origin of the novel photocurrent behavior is clarified and a room-temperature exciton binding energy of 210 meV is determined with the device. In the phototransistor geometry, lateral p-n junctions serve as a simultaneous pathway for both photogenerated electrons and holes, reducing their recombination rate and thus enhancing photodetection. The study establishes a new device platform for both fundamental studies and technological applications.

One order enhancement of charge carrier relaxation rate by tuning structural and optical properties in annealed cobalt doped MoS2 nanosheets

The effective manipulation of excitons is crucial for the realization of exciton-based devices and circuits, and doping is considered a good strategy to achieve this.

Efficient ionization of two-dimensional excitons by intense single-cycle terahertz pulses

External electric fields are highly attractive for dynamical manipulation of excitons in two-dimensional materials. Here, we theoretically study the ionization of excitons in monolayer transition metal dichalcogenides (TMDs) by intense pulsed electric fields in the terahertz (THz) regime. We find that THz pulses with realistic field strengths are capable of ionizing a significant fraction of photogenerated excitons in TMDs into free charge carriers. Short THz pulses are therefore an efficient, non-invasive method of dynamically controlling the free carrier concentration in monolayer TMDs, which is useful for applications such as THz modulators. We further demonstrate that exciton ionization probabilities should be experimentally measurable by comparing free carrier absorption before and after the THz pulse. Detailed results are provided for different TMDs in various dielectric environments.

Improved efficiency, stable spectra and low efficiency roll-off achieved simultaneously in white phosphorescent organic light-emitting diodes by strategic exciton management

Despite their merits of high efficiency and environmental friendliness, phosphor based white organic light-emitting diodes (WOLEDs) for commercial applications still face tough challenges of efficiency roll-off and color stability. Herein, we fabricated high-efficiency phosphor WOLEDs with extremely low roll-off and stable white emission by employing mixed spacer layer between the two complementary emissions as well as mixed host in the orange layer. The strategic exciton management in our proposed device structure greatly balanced the transport of charge carriers due to the excellent exciton manipulation of the mixed spacer, and significantly suppressed the exciton quenching owing to the extended exciton recombination region, which significantly minimized the efficiency roll-off of the fabricated WOLEDs. The resulting phosphor WOLED exhibited the maximum current efficiency (CE) and power efficiency (PE) of 47.5 cd A−1 and 44.7 lm W−1, respectively, and the CE still had 43.1 cd A−1 at 5000 cd m−2, showing a suppressed efficiency roll-off of only 9.2%. Additionally, the device achieved fairly stable spectra over a wide range of luminance with suitable CIE coordinates for indoor lighting and outdoor displays.

Strong spin-orbit coupling inducing Autler-Townes effect in lead halide perovskite nanocrystals

Manipulation of excitons via coherent light-matter interaction is a promising approach for quantum state engineering and ultrafast optical modulation. Various excitation pathways in the excitonic multilevel systems provide controllability more efficient than that in the two-level system. However, these control schemes have been restricted to limited control-light wavelengths and cryogenic temperatures. Here, we report that lead halide perovskites can lift these restrictions owing to their multiband structure induced by strong spin-orbit coupling. Using CsPbBr3 perovskite nanocrystals, we observe an anomalous enhancement of the exciton energy shift at room temperature with increasing control-light wavelength from the visible to near-infrared region. The enhancement occurs because the interconduction band transitions between spin-orbit split states have large dipole moments and induce a crossover from the two-level optical Stark effect to the three-level Autler-Townes effect. Our finding establishes a basis for efficient coherent optical manipulation of excitons utilizing energy states with large spin-orbit splitting.