Hydrothermal method was successfully utilized to grow ZnO-nanorods on p-type silicon substrate. The highly dense grown ZnO-nanorods are well-aligned, and perpendicularly to substrate confirmed by scanning electron microscopy. The X-ray diffraction analysis confirmed that the [002] orientation was the major growth direction of the ZnO nanorods. A shadow masks have used to fabricate Metal–semiconductor–metal (MSM) structure. Three arrays of Ag interdigitated electrodes were then deposited onto the ZnO-nanorod/Si substrates. The current characteristics of [Ag/ZnO-nanorod/Ag]/Si devices were investigated range of -2 to +2 V. The as-fabricated devices showed a contrast ratio (i.e., the photocurrent/dark current) of 1.17 along with room temperature 0.115 mA/W responsivity at 365 nm and -2 V. A simulation analysis for the theoretical MSM structure has also been done in this work. A Visual TCAD was also used to simulate this device. A comparative study of experimentally and theoretically obtained results was also carried out and both results were found in good agreement of each other.
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