AbstractThin copper single crystal samples have been irradiated by energetic electrons which were incident along major crystallographic directions. Appreciable defect production was observed in samples oriented for 〈100〉 and 〈110〉 incidence in the near‐threshold range, indicating that threshold displacement energies for both directions are comparable. Postirradiation studies have shown that recovery takes place throughout the entire Stage I temperature range, even at the lowest electron energies.
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