Main Charge Carriers Research Articles

First principles calculations of the electronic, optical and thermoelectric performance of RbZn1−x NixF3 (x = 0, 0.25, 0.5, 0.75 and 1) alloys

First principles investigations of the electronic, optical and thermoelectric performance of RbZn[Formula: see text]Ni[Formula: see text]F3 (x = 0, 0.25, 0.5, 0.75 and 1) alloys are calculated using spin polarized full-potential linear augmented plane wave method, as implemented in Wien2k code. These alloys are found to be stable, ductile and can be formed with ferromagnetic character. RbZn[Formula: see text]Ni[Formula: see text]F3 are found to be insulator alloys with bandgap energy of range 7.02–5.14 eV using the modified Becke–Johnson functional. This gap is decreasing with increasing the Ni concentration in the unit cell. The optical parameters are calculated in the energy range upto 35 eV. The calculated static refractive index values are found directly proportional with the higher concentration of Ni atoms in the alloys. The transport coefficients are calculated using BoltzTrap code. The hole assumes the main charge carriers of the present alloys with p-type-doping for RbZnF3 alloy and n-type-doping for RbZn[Formula: see text]Ni[Formula: see text]F3. The calculated optical and transport coefficient values show promising optoelectronic and thermoelectric applications of the studied alloys.

Plasticized solid polymer electrolyte based on natural polymer blend incorporated with lithium perchlorate for electrical double-layer capacitor fabrication

A plasticized solid polymer electrolyte system is prepared using polymer blend of methyl cellulose–potato starch with lithium perchlorate (LiClO4) as dopant salt and glycerol as plasticizer. Transport properties of the electrolytes are investigated using electrical impedance spectroscopy (EIS). By applying a method proposed by Arof et al. which was found to be suitable for both Arrhenius and Vogel–Tammann–Fulcher (VTF) type of electrolytes, the number density (n), diffusion coefficient (D), and mobility (μ) of ions are found to be influenced by the concentration of glycerol. From ion and electron transference number analysis, it is verified that ions are the main charge carriers. Linear sweep voltammetry (LSV) verifies the suitability of the most conductive electrolyte to be employed in the carbon-based symmetric electrical double-layer capacitor (EDLC) fabrication. The EDLC has been tested using the galvanostatic charge–discharge and cyclic voltammetry (CV) techniques. The specific capacitance (Csp) of the electrode using CV at a sweep rate of 2 mV s−1 is found to be 61.58 F g−1. The EDLC has been tested for 1000 charge–discharge cycles with the highest Csp value of 28.04 F g−1.

The effect of the charge pattern on the applicability of a nanopore as a sensor

We investigate a model nanopore sensor that is able to detect analyte ions that are present in the electrolyte solution in very small concentrations. The nanopore selectively binds the analyte ions with which the local concentrations of the ions of the background electrolyte (KCl), and, thus, the ionic current flowing through the pore is changed. Analyte concentration can be determined from calibration curves. In our previous study (Mádai et al. J. Chem. Phys., 147(24):244702, 2017.), we proposed a symmetric model (surface charge is negative all along the pore). The mechanism of sensing was a competition between K+ and positive analyte ions, so increasing analyte concentration decreased K+ current. Here we allow asymmetric charge patterns on the pore wall (positive/negative/neutral along the pore), thus, gaining an additional device function, rectification, resulting in a dual responsive device. We find that a bipolar nanopore is an efficient geometry with Cl− ions being the main charge carriers. The mechanism of sensing is that more positive analyte ions attract more Cl− ions into the pore thus increasing the current. Also they make the pore less asymmetric and, thus, decrease rectification. We use a hybrid computer simulation method, where a generalization of the grand canonical Monte Carlo method to non-equilibrium (Local Equilibrium Monte Carlo) is coupled to the Nernst-Planck equation with which the flux is computed.

THE IMPACT OF ELECTRONIC IRRADIATION ON THE MAGNETIC SENSITIVITY OF n-Si<P> SINGLE CRYSTALS

The projected impact of radiation on semiconductors allows to create on their basis the various elements of sensor electronics with the necessary characteristics, in particular the semiconductor Hall sensors. Therefore, the studies of irradiation by different flows of fast electrons with the energy of 12 MeV on the magnetic sensitivity of n-Si <P> single crystals have been carried out by us. The measurements of Fourier infrared spectroscopy and Hall effect with the aim of identifying the nature of created radiation defects have been conducted. On the basis of the research, it has been established that the main radiation defects, formed in silicon at the electron irradiation, are Ci Oi complexes, A-centers (VOi complexes), and A-centers, which are additionally modified by phosphorus impurity (VOi P complexes). Taking into account the obtained temperature dependencies of the Hall constant, the values of the coefficients of the magnetic sensitivity for unirradiated and irradiated samples of silicon were calculated. The performed calculations show that the magnetic sensitivity of n-Si single crystals increases and significantly depends on a temperature with the increasing of the flow irradiation. A significant increase of the magnetic sensitivity at the temperatures T≈170 K for the largest electron flow 2·1017 el./cm2 (more than 500 times) in relation to unirradiated n-Si <P> single crystals is obtained. The reason for such an increase in the magnetic sensitivity of n-Si <P> is the formation of Ci Oi , VOi and VOi P complexes that create deep energy levels in the band gap of silicon. Such levels act as compensating centres in relation to the main charge carriers. The increase of the degree of compensation of n-Si <P> single crystals with the increasing of the flow of electron irradiation leads to an increase of Hall constant, and hence of the magnetic sensitivity. The obtained results can find a practical application for designing based on of irradiated n-Si <P> single crystals the Hall sensors, which can function in a wide range of temperatures.

Electrical conductivity, thermoelectrical properties, and EPR spectroscopy of copper chromite ceramic samples doped with magnesium

The results of a study of copper chromite ceramic samples doped with magnesium are presented. The samples were synthesized according to the solid-phase method using a special procedure for preparing the initial mixture, which ensures a uniform distribution of magnesium with its content from 0.2 to 6%. The substitution of chromium for magnesium in the crystal lattice is confirmed by Raman scattering of light and EPR spectra. As the magnesium content increases from 0 to 6 at.%, the resistivity of the synthesized samples decreases by more than 3 orders of magnitude at room temperature. High thermopower values were obtained, and it was shown that the main charge carriers are holes, and the predominant mechanism of hole transport in doped samples is hopping transfer over localized states, whose density decreases with an increase in energy near the Fermi energy. It is shown that the localization radius increases with an increase in magnesium content.

Electronic transport and optical properties of Mo0.5W0.5Te2 single crystal

A relatively pure and perfect Weyl semimetal Mo0.5W0.5Te2 single crystal was synthesized, and its electrical resistivity, galvanomagnetic properties at temperatures from 4.2 to 80 K in fields up to 10 T, as well as optical properties at room temperature were studied. It is shown that the temperature dependence of the resistivity has a metallic type. At T = 4.2 K and in a 10 T field, the magnetoresistance reaches 29%, monotonously decreasing with temperature. Analysis of the field and temperature dependences of the magnetoresistance suggests that the Fermi surface of Mo0.5W0.5Te2 can contain both open and closed sheets. Studies of the Hall effect and estimates made on this basis showed that the main charge carriers are electrons with a concentration of ∼ 1020 cm–3 and mobility of ∼ 151 cm2/V⋅s at Т = 4.2 K. With an increase in temperature, the concentration of current carriers increases, and their mobility decreases. Optical studies demonstrate that the Mo0.5W0.5Te2 single crystal has no features typical of metals. Interband absorption of light dominates over the entire studied spectral region. The appearance of a weak contribution from free carriers is noted at energies of less than 0.6 eV.

Structure and Doping Determined Thermoelectric Properties of Bi2Se3Thin Films Deposited by Vapour–Solid Technique

In this work, a simple catalyst-free vapour-solid deposition method was applied for controlled deposition of two types (planar and disordered) of continuous Bi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> nanostructured thin films on different (fused quartz/glass, mica, graphene) substrates. Characterisation of electron transport (type, concentration and mobility of the main charge carriers) and thermoelectric properties (Seebeck coefficient and power factor) showed that proposed in this work deposition method allows to obtain Bi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films with power factor comparable and even higher than reported for the Bi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films grown by molecular beam epitaxy technique. Power factor of the best obtained thin films can be significantly improved by introduction Sb or Fe dopants in low concentrations.

Процессы переноса заряда в легировaнном натрием углеродном композите на основе фуллеренов и терморасширенного графита

AbstractThe results of doping of a carbon composite material, in which fullerenes are located in a conductive matrix based on thermally exfoliated graphite, with a sodium dopant are presented. Charge transfer processes taking place in samples with different initial ratios of components are studied. It turns out that the electrical resistivity of the samples increases with the introduction of sodium and an increase in its content, since the mobility of the main charge carriers, which are holes as in the undoped material, decreases. The concentration of charge carriers in different types of samples varies in both directions and can increase by more than an order of magnitude. It is concluded that Na plays an ambiguous role. It can contribute not only to the generation of free electrons, but also to an additional increase in the concentration of various defects that can generate free holes and can affect, being effective traps and scattering centers, all types of charge carriers.

Synthesis and characterisation of the new oxyfluoride Li+ ion conductor, Li5SiO4F

A new polymorphic phase, Li5SiO4F, with Li+ ion dynamics that are structurally distinct from Li4SiO4, is described. The γ polymorph forms at 750–775 °C, melts incongruently at 800 °C and crystallizes in a monoclinic unit cell: a = 8.67(1) Å, b = 16.51(1) Å, c = 11.23(2) Å, β = 96.61(4) ° and V = 1602.3(3) Å3. The α polymorph forms at 650 °C and appears to be metastable. The γ polymorph has a Li+ ion conductivity of 1.2 × 10−7 S cm−1 at 40 °C, that is several orders of magnitude higher than both the α polymorph and Li4SiO4, with an associated activation energy of 0.51(1) eV. Variable temperature 19F and 7Li static NMR measurements show the absence of F− mobility but the existence of Li+ mobility and confirm that Li+ is the main charge carrier in both polymorphs of Li5SiO4F. 7Li line narrowing NMR experiments suggest that the barrier to local Li hopping is fairly small (0.2–0.3 eV) with faster Li+ ion dynamics in γ-Li5SiO4F compared to α-Li5SiO4F. γ-Li5SiO4F has negligible electronic conductivity, is stable in contact with Li metal and is a new type of stoichiometric, mixed anion, Li+ ion conductor.

Magnetic-State Controlled Molecular Vibrational Dynamics at Buried Molecular–Metal Interfaces

Self-assembled molecular structures have been intensively used in molecular electronics and spintronics. However, detailed nature of the interfaces between molecular layers and extended metallic contacts used to bias the real devices remains unclear. Buried interfaces greatly restrict application of standard techniques such as Raman or scanning electron microscopies. Here we introduce low frequency noise spectroscopy as a tool to characterize buried molecular-metal interfaces. We take advantage of vibrational heating of the molecules with incomplete contacts to the interface. Electrons, being the main spin and charge carriers propagating through the interfaces involving self-assembled molecules, interact inelastically with charged atomic ions. Such interactions produce quantum molecular vibrations (phonons). Detailed investigation of both conductance and conductance fluctuations in magnetic tunnel junctions with few nm Perylenetetracarboxylic dianhydride (PTCDA) allows to map vibrational heating at specific biases taking place in 'hot spots' where self-assembled layers weaker contact the metallic electrodes. We follow this effect as a function of PTCDA thickness and find the best molecular-metal order for the lowest (3-5 monolayers) barriers. Moreover, we unveil interplay between spin and phonons at interface showing experimentally and by modelling spin-control over molecular vibrational heating. We find that vibrational heating related low frequency noise essentially depends on the relative alignment of the electrodes with noise changes well beyond expectations from fluctuation-dissipation theorem.

Electronic-Ionic Processes in Bi2Cu0.5Mg0.5Nb2O9 with Pyrochlore Structure

Solid solution Bi2Cu0.5Mg0.5Nb2O9–δ with the pyrochlore structure is synthesized by three different methods. Its structure and chemical composition are confirmed by X-ray diffraction analysis, electron microscopy, and energy-dispersive spectroscopy. The electronic-ionic processes are studied by the method of impedance spectroscopy in the frequency range from 0.3 Hz to 1.0 MHz and the temperature range from 0 to 340°С. The data are processed with the use of ZView program. Electrochemical models of samples are obtained in the form of equivalent circuits. The sign of the main charge carrier is determined by the thermo-emf method. Nonlinear effects are studied based on voltammetric characteristics. It is found that at room temperature, the charge in samples is transferred by electrons and cations (presumably, copper). In the temperature range of 260–300°С, the capacitance of samples and the specific conductivity of their volume demonstrate local minimums. Insofar as at these temperatures the oxygen conduction may occur, it is assumed that associates of anions and cations are formed. The decrease in the concentration of charge carries is confirmed by sample’s equivalent circuit into which the Gerischer impedance is introduced to enhance the accuracy. It is shown that at t = 260°С, the lifetime of charge carriers is the minimum.

Tracking ionic fluxes in porous carbon electrodes from aqueous electrolyte mixture at various pH

Electrochemical quartz crystal microbalance (EQCM) and cyclic voltammetry (CV) techniques were used to study ion dynamics in porous carbide-derived carbon (CDC) electrodes in various aqueous electrolytes. Although the cyclic voltammetries look similar, EQCM revealed different ion transfer depending on the electrolyte during both positive and negative polarization. During polarization in neutral K2SO4 electrolyte, partial desolvation of cation and anion were observed in carbon micropores. In EMI+-HSO4− electrolyte, the main charge carrier during cation adsorption was not found to be bulkier EMI+, but smaller and highly mobile H+. Furthermore, ionic fluxes during charging/discharging were monitored and identified in multi-ions aqueous system, which was ambiguous according to the CV plots. EQCM shows its powerful ability to serve as an accurate gravimetry probe to study the electrolyte concentration and compositional changes in porous materials.

Effect of calcium and copper/iron co-doping on defect-induced properties of La2NiO4-based materials

The La2-xCaxNi1-y(Fe/Cu)yO4+δ solid solutions with х = 0.2, 0.4, 0.5 and y = 0, 0.1, 0.2, 0.3 were synthesized by decomposition of citrate–nitrate precursors. The single-phase La2-xCaxNi1-y(Fe/Cu)yO4+δ materials crystallized in the K2NiF4-type structure, sp. gr. I4/mmm. The crystal structure parameters of La2-xCaxNi1-y(Fe/Cu)yO4+δ were refined by the Rietveld method. The unit cell volume of La2-xCaxNi1-y(Fe/Cu)yO4+δ decreased with x and increased with y. All studied samples exhibited oxygen excess compared to the stoichiometric composition (δ > 0) in the temperature range 30–1100 °C except for La1.6Ca0.4Ni1-yCuyO4+δ (y = 0.2 and 0.3). Calcium and copper doping decreased the total oxygen content while iron doping increased it in La2-xCaxNi1-y(Fe/Cu)yO4+δ. Thermal expansion coefficients (TECs) of La2-xCaxNi1-y(Fe/Cu)yO4+δ slightly increased with dopant concentration and varied in the range (14.5–15.1) × 10−6 K−1. The contribution of chemical expansion was shown to be negligible. The total conductivity of La2-xCaxNi1-y(Fe/Cu)yO4+δ was thermally activated within the whole studied temperature range 30–1000 °C and could be described in terms of small polaron conduction mechanism. The values of total conductivity increased with x and decreased with y in La2-xCaxNi1-y(Fe/Cu)yO4+δ. The analysis of the Seebeck coefficient vs temperature for La2-xCaxNi1-y(Fe/Cu)yO4+δ showed that the main charge carriers are electron holes localized on Ni2+ cations represented by low-spin Ni3+ cations which had a tendency to change the spin configuration gradually to high-spin when the temperature and dopant content increased.

The Use of Different Pulsed Electron Irradiation for the Formation of Radiation Defects in Silicon Crystals

This paper reports the formation of structural defects in the lattice of silicon (n-Si) single crystals, as a result of irradiation by different intensities and pulses of electrons. The samples were studied by means of Hall effect measurements of electro-physical parameters (specifically the concentration of the main charge carriers) as a function of temperature and radiation dose. The role of the radiation current density (pulse height) is discussed, which gives rise to a peculiar behavior in the electrical-physical properties of n-Si. In particular, thermal processes are found not to develop, due to the ultrafast (pulse duration in the range 10−12–10−13s) nature of the incident radiation, which causes an almost “pure” energy interaction to occur between the radiation and the atoms within the crystal, and the formation of cluster defects. A scheme for the time-scale of the formation of these radiation defects is presented. From the dose and temperature dependences of the concentration of main charge carriers, the radiation defects introduction rates were determined.

Features of Stationary Photoconductivity of High-Ohmic Semiconductors Under Local Illumination

Photoconductivity has been thoroughly studied for a long time. However, most researchers have examined photoconductivity of semiconductors while illuminating the entire surface of samples. The present paper examines the effect of local exposure that ensures a high level of injection of free charge carriers upon the conductivity of high-ohmic cadmium telluride and semi-insulating gallium arsenide samples and upon the properties of ohmic contacts to samples. The authors found that regardless of the exposure area the value of transition resistance of ohmic contacts decreases and the concentration of the main charge carriers increases in the sample in proportion to radiation intensity. This research uncovered a number of previously unknown effects that are interesting from the physical point of view. This paper focuses on discussing these effects.

Study of electrokinetic and magnetic properties of ZrNi1-xRhxSn semiconductive solid solution

The features of electrokinetic, energy state and magnetic characteristics of ZrNi1-xRhxSn semiconductive solid solution were investigated in the ranges: T = 80-400 K, x = 0-0.10. It was shown that substitution of Ni atoms (3d84s2) by Rh atoms (4d85s1) in the structure of ZrNiSn compound generated the structural defects with acceptor nature, and holes became the main charge carriers in the ZrNi1-xRhxSn at low temperature. Based on analysis of the motion rate of the Fermi level ΔεF/Δх in ZrNi1-xRhxSn to the valence band and change of sign of thermopower coefficient from positive to negative it was suggested that the structural defects of acceptor and donor natures were generated simultaneously (donor-acceptor pairs), and deep donor band ɛD2 was formed.

Kinetic modeling of streamer penetration into de-ionized water

Interest in plasma-liquid interaction phenomena has grown in recent years due to applications in plasma medicine, water purification, and plasma-hydrocarbon reforming. The plasma in contact with liquid is generated, for example, using the plasma jets or streamer discharges. The interaction between the streamer and water can cause both physical and chemical modifications of the liquid. In this paper, the interaction between an anode-directed streamer and the de-ionized water is studied using one-dimensional particle-in-cell Monte Carlo collisions model. In this model, plasma species in both gas and liquid phase are considered as the macro-particles. We find that the penetration of the streamer head into the liquid causes ionization of water molecules by electron impact, a process which is usually ignored in the fluid models. The main charge carriers in the liquid phase are negative water ions which agree with earlier experimental and computational modeling studies. Additionally, we observe an ion-rich sheath in the vicinity of the water surface on the gas side.

B-Site Cation-Ordered Double-Perovskite Oxide as an Outstanding Electrode Material for Supercapacitive Energy Storage Based on the Anion Intercalation Mechanism.

Perovskite oxides are highly promising electrodes for oxygen-ion-intercalation-type supercapacitors owing to their high oxygen vacancy concentration, oxygen diffusion rate, and tap density. Based on the anion intercalation mechanism, the capacitance is contributed by surface redox reactions and oxygen ion intercalation in the bulk materials. A high concentration of oxygen vacancies is needed because it is the main charge carrier. In this study, we propose a B-site cation-ordered Ba2Bi0.1Sc0.2Co1.7O6-δ as an electrode material with an extremely high oxygen vacancy concentration and oxygen diffusion rate. A maximum capacitance of 1050 F g-1 was achieved, and a high capacitance of 780 F g-1 was maintained even after 3000 charge-discharge cycles at a current density of 1 A g-1 with an aqueous alkaline solution (6 M KOH) electrolyte, indicating an excellent cycling stability. In addition, the specific volumetric capacitance of Ba2Bi0.1Sc0.2Co1.7O6-δ reaches up to 2549.4 F cm-3 based on the dense construction and high tap density (3.2 g cm-3). In addition, an asymmetric supercapacitor was constructed using activated carbon as a negative electrode, and it displayed the highest specific energy density of 70 Wh kg-1 at the power density of 787 W kg-1 in this study.

Improvement of ionic conductivity in A-site lithium doped sodium bismuth titanate

Oxide-ion conductors play a significant role in various applications such as solid oxide fuel cells (SOFCs), oxygen separation membranes and sensors. Recently, high ionic conductivity (~1×10−4Scm−1 at 600°C) was found in sodium bismuth titanate (NBT), which originates from oxygen vacancies compensating the introduced Bi-deficiency. By providing pathways with low diffusion barriers, the highly polarizable Bi3+ ions with 6s2 lone pair electrons and weak BiO bonds are also beneficial for the migration of oxygen ions. Here we report the influence of lithium doping on the electrical properties of NBT. The optimal doping level of 4at% Li on the Bi-site improves the ionic conductivity by one order of magnitude to ~7×10−3Scm−1 at 600°C without changing the conduction mechanism, which could be attributed to an increase in the oxygen vacancy concentration based on an acceptor doping mechanism. A further increase in Li content does not improve the total conductivity. Oxygen diffusion data were acquired by the Isotope Exchange Depth Profile (IEDP) method in combination with Secondary Ion-Mass Spectrometry (SIMS). The oxygen self-diffusion coefficients (e.g. 7.04×10−9cm2s−1 at 600°C) are in excellent agreement with the values derived from impedance spectroscopy data, suggesting that the oxygen ions are the main charge carriers in the system. Furthermore, a degradation test was performed for 100h under a variety of atmospheres, showing only a slight decrease in conductivity in both air and oxygen atmospheres attributed to the loss of material from the A-site. Comparison with other oxide-ion conductors indicates that Li-doped NBT materials are promising candidates for intermediate temperature SOFC applications.

Feedback effect of electric field force on electrification and charge structure in thunderstorm

The electrification within the thunderstorm, caused mainly by inductive and noninductive charging mechanism, can produce strong local electric field inside the thundercloud. Due to the resulting electric field force, the vertical velocity of the graupel and hail particles which are the main in-cloud charge carriers, would change. As a feedback, this variation could affect the original electrification and charge structure of the thunderstorm. In order to investigate such a feedback effect, a weather research forecasting (WRF) model coupled with explicit lightning physics including charging and discharge lightning scheme (hereafter WRF-Elec) is employed and modified in this study. We derive the formulas for calculating the mass-weighted mean terminal velocities of graupel and hail under the balance among gravity, resistance and electric field force. Then, the National Sever Storm Laboratory (NSSL) two-moment bulk microphysics scheme is modified by adding the calculating code with consideration of electric field force (EFF) acting on the fall speed of graupel and hail particles. Eventually, the two-coupled WRF-Elec is developed successfully.#br#Based on this modified WRF-Elec, sensitivity tests are conducted to quantitatively investigate the influences of EFF on the thunderstorm electrification and the corresponding charge structure in an idealized supercell case. The results show that during the rapid enhancement of the thunderstorm, the grid-scale mass-weighted mean fall speed of graupel and hail vary significantly in consideration of EFF, with the maximum values both exceeding 4 m/s, although this situation occurs within a local area and lasts a short time. The action of EFF tends to enhance the falling of graupel and weaken the falling of hail. The influences of EFF on those graupel and hail particles with smaller-size and lower number concentration are stronger, as determined by composite factors of the strength and polarity of electric field, the diameter and number concentration of graupel and hail, and their charge density and polarity as well. The adjustment of the terminal velocity of the graupel and hail in consideration of EFF, eventually results in increasing the rate of both inductive and noninductive charge separation, where the inductive charging is the much more significant one. This leads to a grid-scale total charge density variation of -0.6-1.2 nC/m3 and a redistribution of the charge structure in the thunderstorm, and correspondingly, an increase of the local vertical electric field by 5 kV/m, thus producing stronger lightning eventually. In addition, due to the effect of electric field force, the mass mixing ratio of four precipitation particles including graupel, hail, ice crystal and snow is changed in the ranges of -0.09-0.24, -0.16-0.04, -0.04-0.05, and -0.01-0.006 g/kg, respectively. Therefore, the electric field force in thunderstorm affects not only the electrification and charge structure, but also the microphysical process. Generally, the overall influence of EFF on electrification tends to be positive, and the feedback effect of EFF on the charge structure should not be neglected.