Magnetoresistance Research Articles

Large magnetoresistance and spin negative differential resistance in photoisomers-based molecular spin valves

By using non-equilibrium Green's functions in combination with density functional theory, the spin transport properties of photoisomers-based molecular spin valves constructed by salicylidene methylamine connected with two cobalt- dibenzotetraaza[14]annulene (Co-DBTAA) complex molecules via acetylene linkers are explored. A large magnetoresistance (MR) effect with a MR ratio larger than 104 can be observed in the molecular spin valves whether salicylidene methylamine is in the cis-enol form or the trans-keto form. Moreover, spin negative differential resistance (NDR) effects are also observed in the photoisomers-based molecular spin valves. The spin transport mechanisms are explored for MR and spin NDR effects observed in the molecular spin valves.

Signature of the Kondo effect in superparamagnetic GO incorporated Cobalt substituted Ni/NiO nanoparticles

The study reports on the magnetization, magnetoresistance, and transport properties of superparamagnetic 10% Co-doped Ni/NiO (C10-NN), Graphene Oxide (GO) incorporated 10% Co-doped Ni/NiO (C10-NNG), and 15% Co-doped Ni/NiO (C15-NN) nanoparticles synthesized via a microwave-assisted sol-gel auto-combustion method. All samples show hysteresis in negative Magnetoresistance (M-R) at different temperatures. Resistivity ρ(T) versus temperature plots of samples C10-NN and C15-NN show metallic behavior with applied fields of 0, 1, 5, 8 T, and at 0 T, 1 T respectively. However, the plot of R-T of the C15-NN sample shows a significant difference at 0 T and 1 T. At 0 T for this sample, the metallic behavior is observed for temperature T > TM, with the resistivity falling abruptly at and above TM = 246 K. The resistivity decreases with increasing temperature, exhibiting metallic behavior again above TMM < 276 K. This jump at 276 K, indicating a metal-to metal transition. The Kondo effect is observed for the first time in C10-NNG sample. The upturn of resistivity ρ(T) towards low temperature in the C10-NNG sample is well described by the power series equation and Kondo term. This sample exhibits the upturn resistivity along with a metal–insulator transition above and below the Kondo temperature TK≈ 93.51(2) K at the 0 T, 1 T, 5 T, and 8 T fields.

Quantum oscillation study of the large magnetoresistance in Mo substituted WTe2 single crystals

The list of interesting electrical properties exhibited by transition metal dichalcogenides has grown with the discovery of extremely large magnetoresistance (MR) and type-II Weyl semimetal behavior in WTe2 and MoTe2. The extremely large MR in WTe2 is still not adequately understood. Here, we systematically study the effect of Mo substitution on the quantum oscillations in the MR in WTe2. The MR decreases with Mo substitution, however, the carrier concentrations extracted from the quantum oscillations show that the charge compensation improves. We believe that earlier interpretations based on the two-band theory, which attribute the decrease in MR to charge imbalance, could be incorrect due to overparametrization. We attribute the decrease in MR in the presence of charge compensation to a fall in transport mobility, which is evident from the residual resistivity ratio data. The quantum scattering time and the effective masses do not change within experimental errors upon substitution. Published by the American Physical Society 2024

The structure, magnetic properties, magnetotransport and temperature coefficient of resistivity of hexagonal 4H-SrMnO3 manganite

The perovskite hexagonal SrMnO3 manganite with four layers (4H-SrMnO3) have been one of the hot topics in materials science due to the physical characteristics of antiferromagnetic, ferroelectric, and thermoelectric effects. The transport properties and magnetoresistance (MR) effect of 4H-SrMnO3 have seldom been reported. The structure, temperature coefficient of resistivity (TCR), magnetic and magnetotransport properties of the 4H-SrMnO3 SrMnO3 manganite obtained by solid state reaction have been investigated in this work. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) measurements at room temperature reveal that the SrMnO3 sample exhibits a pure hexagonal symmetric structure, with uniform distribution of particles and elements. Under applied magnetic fields of 2000 Oe, the SrMnO3 sample exhibits a transition from antiferromagnetic (AFM) to paramagnetic (PM) behavior at approximately 280 K, known as the Néel temperature (TN). The resistance is influenced by the magnetic field, but overall exhibits an insulating state. Remarkably, the SrMnO3 sample shows significant MR effect near room temperature. The negative MR near room temperature varies from 5.8 % with 1 T field to 16.8 % with 6 T field, indicating an existence of obvious MR in the hexagonal AFM SrMnO3 manganite. Furthermore, the maxmium value of TCR reaches 4.34 % K−1 near room temperature. These findings of room-temperature TCR and room-temperature MR in the AFM 4H-SrMnO3 hold immense value for the research and potential application of the AFM spintronics and devices.

Room temperature spin injection study across semi-crystalline PVDF-HFP thin films in PVDF-HFP/NiFe bilayers and Ag/(NiFe or Co)/PVDF-HFP/NiFe spin valves

Spin injection across 160 nm thick semi-crystalline Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) is methodically investigated at room temperature in PVDF-HFP/NiFe bilayers and Ag/(NiFe or Co)/PVDF-HFP/NiFe vertical organic spin valves (OSVs) using both the co-planar waveguide ferromagnetic resonance (CPW-FMR: 7-35 GHz) and magnetoresistance (MR) techniques. The structural and microstructural characteristics of PVDF-HFP reveal the formation of mixed non-ferroelectric alpha and ferroelectric beta phases. The spin injection due to the transfer of angular momentum in PVDF-HFP/NiFe is quantified by measuring the spin-mixing conductance (g↑↓) and the enhancement in Gilbert damping (α) parameters from CPW-FMR data. A significant increase inαof 26% andg↑↓of (2.72 ± 0.45) × 1019m-2highlights the efficient spin injection into the PVDF-HFP spacer layer. Further, the MR in OSV structures reveals a room temperature spin injection with a maximum MR of 0.278 ± 0.006% for Ag/Co/PVDF-HFP/NiFe and 0.349 ± 0.039% for the Ag/NiFe/PVDF-HFP/NiFe devices. Furthermore, the spin injection processes are discussed w.r.t to bias voltages, interfaces and microwave frequencies.

Tilted-chiral-state-induced topological Hall effect in chiral magnetic soliton host Cr1/3TaS2

Chromium-intercalated Cr1/3TaS2 is well known for hosting a nontrivial chiral magnetic soliton lattice (CSL) with the reported highest Curie temperature (TC∼151 K) and strongest spin–orbit coupling, which has significant applications in gigahertz and high-speed spintronic devices. Herein, we thoroughly investigate the magneto-electrical transport properties of Cr1/3TaS2 single crystals. For H//ab, our magnetoresistance (MR) measurements reveal distinctive step-like behaviors, which are attributed to the formation and annihilation of chiral magnetic solitons. When under an oblique field, similar but weaker MR behaviors are observed compared to H//ab, indicating the appearance of an inclination-field-induced tilted-CSL. A topological Hall effect is observed under an oblique field, which is suggested to be induced by a nonzero topological charge density resulting from the tilted chiral states. The Cr1/3TaS2 offers an intriguing platform for studying the impact of chiral magnetic structures on magneto-electrical properties, which holds promise for both future spintronic device applications and fundamental investigation.

Effective control of magnetism and transport properties of monolayer WV2N4 with two magnetic atomic layers and its van der Waals heterostructure

The large magneto-resistance (MR) effect produced by electric control of the magnetic state for van der Waals (vdW) heterostructures composed of vdW intrinsic magnets holds great significance for low-dissipation spintronic devices. Our first-principles calculations reveal that the proposed monolayer WV2N4 is a ferromagnetic (FM) metal with two magnetic V atomic layers, and the interlayer magnetic coupling between two V atomic layers can be switched from FM to antiferromagnetic coupling by applying a small compressive strain. Interestingly, a large MR ratio of 253% is achieved in the proposed graphite/monolayer WV2N4/graphite vdW heterostructure using a −1.5% compressive strain. Combining the strain-induced change in magnetism of monolayer WV2N4 and the graphite/monolayer WV2N4/graphite vdW heterostructure with the inverse piezoelectricity of piezoelectric materials, a feasible strategy is proposed to achieve electric control of the interlayer magnetic coupling of monolayer WV2N4 in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by piezoelectric materials by utilizing the inverse piezoelectricity, thereby generating a large MR ratio in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by the piezoelectric material. Our work presents a promising avenue for developing energy-efficient spintronic devices.

Impact of orbital hybridization on spin-polarized electronic transport through Ni-MAPbI3 interfaces

The solution-processed methylammonium lead tri-iodine (MAPbI3), with long spin lifetimes and large spin diffusion lengths, has merit for developing stable perovskite spin valves (PeSV) with low saturation fields. By far, it remains challenging to avoid ill-defined ferromagnet-MAPbI3 interfaces during device fabrications using solution methods and to quantify the hybridized interfacial electronic and magnetic structures. Herein, an annealing-free method was developed for the fabrication of MAPbI3 based PeSV. In comparison to a thermally annealed device, an improved room temperature magnetoresistance (MR) was achieved. We found remarkable interfacial contributions to anisotropic magnetoresistance and MR. The first-principles calculation was further adopted to quantify the interfacial spin and orbital moments. Our results suggest that the orbital hybridization and the spin transfer are remarkable for the formation of the spin-dependent interfacial density of states. It consequently affects magnetic switching behaviors. This study holds an exceptionally important role for a deep understanding of the spin-polarized electronic transport through the Ni-MAPbI3 hybridized interface.

Nonvolatile ferroelectric control of electronic properties of Bi2Te3

Abstract Nonvolatile electric-field control of the unique physical characteristics of topological insulators (TIs) is essential for fundamental research and development of practical electronic devices. Electrically tunable transport properties through electrostatic gates have been extensively investigated. However, the relatively weak and volatile tunability limits its practical applications in spintronics. Here, we demonstrate the nonvolatile electric-field control of Bi2Te3 transport properties via constructing ferroelectric Rashba architectures, i.e., 2D Bi2Te3/α-In2Se3 ferroelectric field effect transistors. Through switching the polarization states of the α-In2Se3, the Fermi level, resistance, Fermi wave vector, carrier mobility, carrier density, and magnetoresistance (MR) of the Bi2Te3 film can be effectively modulated. Importantly, a shift of Fermi level toward band gap with surface state occurs as switching to negative polarization state, the contribution of the surface state to the conductivity increases, thereby increasing carrier mobility and electron coherence length significantly, and resulting in enhanced WAL effect. These results provide a nonvolatile electric-field control method to tune the electronic properties of TI and can further extend to the quantum transport properties.

Optimized TCR and MR properties of La0.7-xSmxCa0.3MnO3 ceramics by Sm3+ doping

La0.7Ca0.3MnO3 (LCMO), with its high temperature coefficient of resistance (TCR) and large magnetoresistance (MR) effect, has emerged as a leading material in the field of new multi-functional ceramics. Enhancing the magnetoresistive effect of LCMO in low magnetic field and expanding its application range is one of the main research goals of this kind of materials. In this work, La0.7-xSmxCa0.3MnO3 (LSCMO) (0≤x≤0.09) ceramic targets with different doping amounts were successfully prepared by sol-gel method, and the influence mechanism of Sm3+ doping on the magnetoresistive effect and electrical transport performance of LSCMO was systematically analyzed. X-ray diffraction (XRD) results showed that the lattice parameters (a,b,c,V) of LSCMO decreased slightly, indicating that the doping amount of Sm3+ at the A-site increased. Scanning electron microscopy (SEM) showed that the grains were closely connected without obvious pores, the grain size decreased slightly. The ρ-T curve shows an obvious metal-insulator (M-I) transition, with the increase of Sm3+, the increase of resistivity, metal-insulator transition temperature (TMI) and ferromagnetic-paramagnetic (FM-PM) transition temperature (TC) move towards low temperature. When x=0.015, the peak value of TCR reaches 41.94%·K-1, and when x= 0.06, the peak value of MR reaches 80.25%, both TCR and MR are improved. The results show that: Sm3+ doping can effectively enhance the electromagnetic transport performance of LSCMO. This material has a very wide application prospect in the fields of magnetic storage, and infrared detection.

Evidence for spin reorientation transition in antiferromagnetic FeRh

FeRh is a unique intermetallic compound known for its temperature-induced phase transition from an antiferromagnetic (AFM) to a ferromagnetic (FM) state, making it a promising candidate for AFM memory applications. In this study, we discovered that FeRh exhibits a temperature-driven spin reorientation transition in the AFM phase. Our investigation using magnetoresistance (MR) measurements reveals that the Néel vector changes from an in-plane direction at high temperatures to an out-of-plane direction at low temperatures. This spin reorientation can be effectively detected through MR, offering a more practical approach for applications. Our findings are crucial for the emerging field of AFM memory, as controlling and identifying the Néel vector is vital for defining the memory state in AFM-based data storage technologies.

Spin-transport across semi-crystalline polyvinylidene fluoride thin films in Ta/Co/PVDF/NiFe pseudo spin-valve devices

Room temperature magnetoresistance (MR) across semi-crystalline polyvinylidene fluoride (PVDF) thin films in Ta(2 nm)/Co(15 nm)/PVDF/NiFe(28 nm) pseudo-spin-valve devices (PSVs) are systematically investigated by varying PVDF thicknesses from 80 − 230 nm and applied bias voltages up to 100 mV. NiFe, Ta/Co magnetic bottom and top electrodes, and PVDF thin films are deposited by DC magnetron sputtering and spin-coating methods. The structural, microstructural, and magnetic natures have been evaluated using grazing incidence X-ray diffraction, atomic force microscopy, and magneto optic kerr effect systems. Electrical characteristics reveal a maximum MR of ∼0.25 % at 60 mV bias voltage across PVDF-80 nm and ∼0.08 % across PVDF-230 nm & PVDF- 120 nm devices. A constant MR is found across all the devices up to 100 mV applied bias voltages. In addition to the electrical spin injection evaluation, coplanar waveguide ferromagnetic resonance measurements are utilized to validate the spin injection into PVDF layers by estimating the Gilbert damping parameters of NiFe and PVDF/NiFe bilayers. Furthermore, low MR in PSVs is discussed with the parallel spin-dependent conducting channels corresponding to PVDF’s amorphous, alpha, and beta crystalline phases.

Unidirectional growth of molybdenum dioxide nanoflakes on C-sapphire substrate via buffer layer induction

Unidirectional growth, a novel and promising approach, is a key method for synthesizing large-scale single crystals of ultra-thin materials. In this study, we present a unique and convenient method for the growth of molybdenum dioxide (MoO2) nanoflakes on a c-sapphire substrate, achieving uniform orientation. Specifically, the MoO2(100) and MoO2 < 021¯> are aligned parallel to sapphire(0001) and sapphire<12¯10>, respectively. A crucial observation in our study is the presence of a buffer layer between the as-grown MoO2 and c-sapphire. This buffer layer is essential in overcoming the limitation of lattice mismatch, thereby facilitating the unidirectional growth of MoO2. The introduction of reductants, such as H2 and sulfur vapor, is critical for the formation of this buffer layer. Electrical measurements indicate that the electrical conductivity of the as-grown MoO2 nanoflake is approximately 3.91 × 106 S/m at 300 K, which is comparable to other metallic nanomaterials. In addition, magnetotransport measurements reveal that the as-grown MoO2 nanoflakes exhibit a temperature-dependent linear magnetoresistance (MR) under magnetic fields. These findings not only demonstrate a method for the unidirectional growth of MoO2 on the c-sapphire substrate but also have significant implications for the application of MoO2 in transparent electrodes and the fabrication of integrated devices based on MoO2.

Exploration of room temperature magnetodielectric behavior in Nd0.5Dy0.5FeO3 thin films and transmission line resonators in GHz frequency range

This study explores the room-temperature magnetodielectric (MD) and magnetoresistance (MR) properties of Nd0.5Dy0.5FeO3 thin films on n-type silicon substrates from 4 Hz to 2 MHz. The observed MD effect registers a change of ∼23 %, and the MR effect manifests a change of ∼11 % when subjected to an applied magnetic field of 2.5 T at a frequency of 177 Hz. Interestingly, the MD effect was absent at 1 T across all frequencies. However, we observed an MR of 6 % at 1 T, implying the possibility of an intrinsic MD effect or the co-existence of both intrinsic and extrinsic contributions to the MD effect. To comprehensively gauge the dielectric properties of the thin film at higher frequencies, a 5-GHz microstripline resonator was fabricated. Coupled with experimental data and simulations, this study reveals a dielectric constant of ∼56 for the Nd0.5Dy0.5FeO3 thin film at 5 GHz and 300 K.

Unraveling magneto-elastoresistance in the Dirac nodal-line semi-metal ZrSiSe

Quantum materials are often characterized by a marked sensitivity to minute changes in their physical environment, a property that can lead to new functionalities and thereby, to novel applications. One such key property is the magneto-elastoresistance (MER), the change in magnetoresistance (MR) of a metal induced by uniaxial strain. Understanding and modeling this response can prove challenging, particularly in systems with complex Fermi surfaces. Here, we present a thorough analysis of the MER in the nearly compensated Dirac nodal-line semi-metal ZrSiSe. Small amounts of strain (0.27%) lead to large changes (7%) in the MR. Subsequent analysis reveals that the MER response is driven primarily by a change in transport mobility that varies linearly with the applied strain. This study showcases how the effect of strain tuning on the electrical properties can be both qualitatively and quantitatively understood. A complementary Shubnikov-de Haas oscillation study sheds light on the root of this change in quantum mobility. Moreover, we unambiguously show that the Fermi surface consists of distinct electron and hole pockets revealed in quantum oscillation measurements originating from magnetic breakdown.

Improvement in CPP-GMR read head sensor performance using [001]-oriented polycrystalline half-metallic Heusler alloy Co2FeGa0.5Ge0.5 and CoFe bilayer electrode

ABSTRACT A current-perpendicular-to-plane giant magnetoresistive (CPP-GMR) device with a half-metallic electrode is one of the most promising candidates of next-generation read head for hard disk drive. In this study, we fabricate [001]-oriented polycrystalline CPP-GMR devices with the normal ferromagnet (NFM) CoFe/half-metallic ferromagnet (HMFM) Co2FeGa0.5Ge0.5 (CFGG) bilayer electrodes to enhance the magnetoresistance (MR) ratio by large interfacial spin-dependent scattering at the NFM/HMFM interface. The CoFe/CFGG bilayer electrode provides the additional large interfacial spin-dependent scattering and achieves high MR ratio of 22.7% with the CoFe(4.5 nm)/CFGG(2.5 nm) bilayer electrodes, which is almost three(two) times larger than the MR ratio with the single CoFe(CFGG) (7 nm) electrodes. The bias voltage dependent study revealed an additional advantage of increasing the output voltage |ΔV| by using the CoFe/CFGG bilayer due to the improvement of the endurance against spin-transfer torque under high bias current. A maximum output voltage Δ V max of 6.5 mV was obtained with the CoFe(5.5 nm)/CFGG(1.5 nm) electrodes, which is the highest ever reported in the CPP-GMR devices with a uniform metallic spacer including high-quality epitaxial devices.

Isothermal magnetization and magnetoresistive variations in trilayer (La2/3Sr1/3MnO3/γ-Fe2O3/La2/3Sr1/3MnO3) hetero-structure

We report the magnetic field dependent magnetization and magnetoresistance (MR) properties of La2/3Sr1/3MnO3 (LSMO)/ γ -Fe2O3/LSMO trilayer heterostructure and single layer LSMO film grown on SiO2/Si (100) substrates utilizing Pulsed Laser Deposition technique. The metal- insulator-metal configuration is a magnetic tunnel junction topology, which is a parallel network of two metallic layers (LSMO) and one insulating layer ( γ -Fe2O3) in current-in-plane (CIP) geometry. The intrinsically inhomogeneous polycrystalline trilayer film shows much lower (almost half ) coercivity, compared to single layer LSMO film. The MR-H [MR = (ρ (H)-ρ (0))/ρ (0)] behavior of the films is studied under two regimes namely, Low Field Magnetoresistance (LFMR) and High Field Magnetoresistance (HFMR) at 5 K and 300 K in the field range of 0–7 T. Several equations were developed to simulate the experimental MR-H data of the studied samples. For both the films, in the LFMR region (0 T < H ≤ 1 T @ 5 K), the variation in MR exhibits a linear increase with H, followed by a logarithmic behavior in the HFMR region (1 T < H ≤ 7 T @ 5 K). For the trilayer film in CIP geometry, a negative MR of 16% is achieved at 5 K and 1 T field conditions, while LSMO single layer shows a negative MR of 13% at same temperature and field conditions. The MR obtained at high field (7 T) for both the films is quantitatively equal with a value of 38% @ 5 K and 15% @ 300 K. We obtained significantly better MR-H results for the trilayer in current-perpendicular-to-plane (CPP) configuration, where the two metallic layers and an insulating layer are in series. In the CPP configuration, MR is 21% @ 5 K and 1 T field, while it reached to 44% at 5 K and 7 T field. At room temperature, the trilayer heterostructure shows MR of 17% at 7 T field condition. At a higher field of 9 T, trilayer film in CPP mode exhibits MR value of 48% @ 5 K and 23% @ 300 K. Further, the anti-parallel and parallel magnetization states of the MIM device are well manifested in CIP and CPP geometries.

Endless Dirac nodal lines and high mobility in kagome semimetal Ni3In2Se2 : a theoretical and experimental study

Kagome-lattice crystal is crucial in quantum materials research, exhibiting unique transport properties due to its rich band structure and the presence of nodal lines and rings. Here, we investigate the electronic transport properties and perform first-principles calculations for Ni3In2Se2kagome topological semimetal. First-principles calculations of the band structure without the inclusion of spin-orbit coupling (SOC) shows that three bands are crossing the Fermi level (EF), indicating the semi-metallic nature. With SOC, the band structure reveals a gap opening of the order of 10 meV.Z2index calculations suggest the topologically nontrivial natures (ν0;ν1ν2ν3) = (1;111) both without and with SOC. Our detailed calculations also indicate six endless Dirac nodal lines and two nodal rings with aπ-Berry phase in the absence of SOC. The temperature-dependent resistivity is dominated by two scattering mechanisms:s-dinterband scattering occurs below 50 K, while electron-phonon (e-p) scattering is observed above 50 K. The magnetoresistance (MR) curve aligns with the theory of extended Kohler's rule, suggesting multiple scattering origins and temperature-dependent carrier densities. A maximum MR of 120% at 2 K and 9 T, with a maximum estimated mobility of approximately 3000 cm2V-1s-1are observed. Ni3In2Se2is an electron-hole compensated topological semimetal, as we have carrier density of electron (ne) and hole (nh) arene≈nh, estimated from Hall effect data fitted to a two-band model. Consequently, there is an increase in the mobility of electrons and holes, leading to a higher carrier mobility and a comparatively higher MR. The quantum interference effect leading to the two dimensional (2D) weak antilocalization effect (-σxx∝ln(B)) manifests as the diffusion of nodal line fermions in the 2D poloidal plane and the associated encircling Berry flux of nodal-line fermions.

Room temperature chiral magnetoresistance in a chiral-perovskite-based perpendicular spin valve

Chirality-induced spin selectivity (CISS) allows for the generation of spin currents without the need for ferromagnets or external magnetic fields, enabling innovative spintronic device designs. One example is a chiral spin valve composed of ferromagnetic and chiral materials, in which the resistance depends on both the magnetization direction of the ferromagnet and the chirality of the chiral material. So far, chiral spin valves have predominately employed chiral organic molecules, which have limited device applications. Chiral perovskites, which combine the properties of inorganic perovskites with chiral organic molecules, provide an excellent platform for exploring CISS-based devices. However, previous chiral perovskite-based spin valves exhibited magnetoresistance (MR) only at low temperatures. Here, we report room temperature MR in a chiral spin valve consisting of chiral perovskites/AlOx/perpendicular ferromagnet structures. It is observed that the chiral MR increases with rising temperature, suggesting the crucial role of phonon-induced enhancement of spin–orbit coupling in CISS in our device. Furthermore, we enhanced the chiral MR by introducing chiral molecules with amplified chirality. This highlights the potential of chirality engineering to improve CISS and the associated chiral MR, thereby opening possibilities for chiral spin valves tailored for cutting-edge spintronic applications.

Effect of the glycerol dispersant on the structure, electrical transport and magnetoresistive properties of La0.67Ca0.33MnO3 ceramics prepared by the sol-gel routine

In this paper, the sol-gel technique is employed to synthesize polycrystalline La0.67Ca0.33MnO3 (LCMO) ceramics, where methanol is chosen as the solvent. The crystal structure, morphology, as well as electrical and magnetoresistive properties were examined. Moreover, the effect of amount of the dispersant glycerol on the properties of LCMO ceramics is studied. X-ray diffraction (XRD) results showed that all samples crystallized in single phases with orthogonal perovskite structure (pnma space group), without any detectable impurity phases. Results reveal that the grain size of LCMO ceramics exhibits an initial increase followed by a decrease, accompanied by a similar behavior in the temperature coefficient of resistance (TCR) and magnetoresistance (MR). When the volume ratio of glycerol and methanol reached 2 %, the grain size is determined to be 7.30 μm, with TCR value of 25.02 % K−1 at T= 263.2 K, and MR value recorded at 55.40 %. The study elucidates the influence of glycerol on LCMO polycrystalline ceramics and optimize the fabrication process, thereby improve the electric transport property and magnetoresistance.