Magnetoresistance Research Articles

Mechanism for Electrostatically Generated Magnetoresistance in Chiral Systems without Spin-Dependent Transport.

Significant attention has been drawn to electronic transport in chiral materials coupled to ferromagnets in the chirality-induced spin selectivity (CISS) effect. A large magnetoresistance (MR) is usually observed, which is widely interpreted to originate from spin (dependent) transport. However, there are severe discrepancies between the experimental results and the theoretical interpretations, most notably the apparent failure of the Onsager reciprocity relations in the linear response regime. We provide an alternative mechanism for the two terminal MR in chiral systems coupled to a ferromagnet. For this, we point out that it was observed experimentally that the electrostatic contact potential of chiral materials on a ferromagnet depends on the magnetization direction and chirality. The mechanism that we provide causes the transport barrier to be modified by the magnetization direction, already in equilibrium, in the absence of a bias current. This strongly alters the charge transport through and over the barrier, not requiring spin transport. This provides a mechanism that allows the linear response resistance to be sensitive to the magnetization direction and also explains the failure of the Onsager reciprocity relations. We propose experimental configurations to confirm our alternative mechanism for MR.

Colossal Magnetoresistance in Layered Diluted Magnetic Semiconductor Rb(Zn,Li,Mn)4As3 Single Crystals

Diluted magnetic semiconductors (DMSs) with tunable ferromagnetism are among the most promising materials for fabricating spintronic devices. Some DMS systems have sizeable magnetoresistances that can further extend their applications. Here, we report a new DMS Rb(Zn1−x−yLiyMnx)4As3 with a quasi-two-dimensional structure showing sizeable anisotropies in its ferromagnetism and transverse magnetoresistance (MR). With proper charge and spin doping, single crystals of the DMS display Curie temperatures up to 24 K. Analysis of the critical behavior via Arrott plots confirms the long-range ferromagnetic ordering in the Rb(Zn1−x−yLiyMnx)4As3 single crystals. We observed remarkable intrinsic MR effects in the single crystals (i.e., a positive MR of 85% at 0.4 T and a colossal negative MR of −93% at 7 T).

First-principle study of spin transport property in L10-FePd(001)/graphene heterojunction

In our previous work, we synthesized a metal/2D material heterointerface consisting of L10-ordered iron–palladium (FePd) and graphene (Gr) called FePd(001)/Gr. This system has been explored by both experimental measurements and theoretical calculations. In this study, we focus on a heterojunction composed of FePd and multilayer graphene referred to as FePd(001)/m-Gr/FePd(001), where m represents the number of graphene layers. We perform first-principles calculations to predict their spin-dependent transport properties. The quantitative calculations of spin-resolved conductance and magnetoresistance (MR) ratio (150%–200%) suggest that the proposed structure can function as a magnetic tunnel junction in spintronics applications. We also find that an increase in m not only reduces conductance but also changes transport properties from the tunneling behavior to the graphite π-band-like behavior. Additionally, we investigate the spin-transfer torque-induced magnetization switching behavior of our junction structures using micromagnetic simulations. Furthermore, we examine the impact of lateral displacements (sliding) at the interface and find that the spin transport properties remain robust despite these changes; this is the advantage of two-dimensional material hetero-interfaces over traditional insulating barrier layers such as MgO.

Density functional study of electrode material for magnetic tunnel junction designed using Co2TiZ (Z = Ge, Si) Heusler alloys

Some of the important applications in the field of spintronics are spin current driven logic devices having logic gates and in read heads in the hard disk drives, magnetic random access memory (MRAM) containing non-volatile memory units and extremely complex magnetic sensor. In spintronic applications, a magnetic tunnel junction (MTJ) is considered the back bone of all such devices. With this motivation, in present study we have predicted very low resistance area (RA) product value and high tunnel magneto resistance (TMR) of two designed MTJs by using full Heusler alloys (FHA) Co2TiZ (Z = Ge, Si) as electrode and MgO as barrier layer. These used half metallic (HM) Heusler alloys (HA), have been investigated using Wien2K code, via primary standard calculations and studied electronic and magnetic properties followed by structural and magnetic phase stability. Spin based band structure along with density of state (DOS) profiles are determined by considering both generalized gradient approximation (GGA) + modified Becke–Johnson functional (mBJ) functional and GGA potentials. For the estimation of the Curie temperature (Tc) mean field approximation (MFA) was considered. After determining physical properties of considered FHAs, spin polarised transport properties are calculated by using PWCOND code embedded in Quantum ESPRESSO (QE) for designed MTJs and obtained extremely low resistance-area product (RA) product and a high value of TMR which is found very suitable for spintronic device applications.

Investigation of thermoelectric and magnetotransport properties of single crystalline Bi2Se3 topological insulator

The realization of remarkable thermoelectric (TE) properties in a novel single-crystalline quantum material is a topic of prime interest in the field of thermoelectricity. It necessitates a proper understanding of transport properties under magnetic field and magnetic properties at low field. We report polarized Raman spectroscopic study, TE properties, and magneto-resistance (MR) along with magnetic characterization of single-crystalline Bi2Se3. Polarized Raman spectrum confirms the strong polarization effect of A1g1 and A1g2 phonon modes, which verifies the anisotropic nature of the Bi2Se3 single crystal. Magnetization measurement along the in-plane direction of single crystal divulges a cusp-like paramagnetic response in susceptibility plot, indicating the presence of topological surface states (TSSs) in the material. In-depth MR studies performed in different configurations also confirm the presence of anisotropy in the single-crystalline Bi2Se3 sample. A sharp rise in MR value near zero magnetic field and low-temperature regime manifests a weak anti-localization (WAL) effect, depicting the quantum origin of the conductivity behavior at low temperature. Moreover, in-plane magneto-conductivity data at low-temperature (up to 5 K) and low-field region (≤15 kOe) confirm the dominance of the WAL effect (due to TSS) with a negligible bulk contribution. Quantum oscillation (SdH) in magneto-transport data also exhibits the signature of TSS. Additionally, an exceptional TE power factor of ∼950 μW m−1 K−2 at 300 K is achieved, which is one of the highest values reported for pristine Bi2Se3. Our findings pave the way for designing single crystals, which give dual advantages of being a good TE material along with a topological insulator bearing potential application.

Sensing characteristics and EPIR Studies on composite manganites: Role of nanoparticles in the micronsized matrix lattice

In the present communication, the electrical transport properties have been investigated for manganite-based composites consisting of different weight fractions of nanoparticles of LaMnO3 (LMO) and polycrystalline La0.7Ca0.3MnO3 (LCMO). A complex phase separation scenario has been proposed to understand the hysteretic resistive nature exhibited by manganite matrix composites. The role of complex phase separation has been discussed for the manganite composite resistivity and temperature coefficient of resistance (TCR) dependence on temperature, thermal cycle, current and LMO content as well as their sensitivity for voltage and current have also been examined. Observed electric pulse-induced resistance (EPIR) switching in these composites under different applied voltages and magnetic fields have been understood based on a complex phase separation scenario and the formation–rupture of conducting filamentary paths. Tuning of magnetic field-dependent resistance and magnetoresistance (MR) with the influence of different resistance states of LMO–LCMO composites has been understood in depth.

Extremely large magnetoresistance and anisotropic transport in the multipolar Kondo system PrTi2Al20

Multipolar Kondo systems offer unprecedented opportunities to design astonishing quantum phases and functionalities beyond spin-only descriptions. A model material platform of this kind is the cubic heavy fermion system PrT2Al20 (T=Ti, V), which hosts a nonmagnetic crystal-electric-field ground state and substantial Kondo entanglement of the local quadrupolar and octopolar moments with the conduction electron sea. Here, we explore the magnetoresistance (MR) and Hall effect of PrTi2Al20, which develops ferroquadrupolar (FQ) order below TQ∼2 K, and compare their behavior with that of the MR and Hall effect of the non-4f analog, LaTi2Al20. In the FQ ordered phase, PrTi2Al20 displays extremely large magnetoresistance (XMR) of ∼103%. The unsaturated, quasilinear field (B) dependence of the XMR violates Kohler's scaling and defies description based on carrier compensation alone. By comparing the MR and the Hall effect observed in PrTi2Al20 and LaTi2Al20, we conclude that the open-orbit topology on the electron-type Fermi surface sheet is key for the observed XMR. The low-temperature MR and the Hall resistivity in PrTi2Al20 display pronounced anisotropy in the [111] and [001] magnetic fields, which is absent in LaTi2Al20, suggesting that the transport anisotropy ties in with the anisotropic magnetic field response of the quadrupolar order parameter. Published by the American Physical Society 2024

Interfacial random roughness effects on the magnetoresistance of Co–Cu metallic superlattices

The purpose of this study is to better understand the interfacial random geometric roughness contribution regarding the magnetoresistance (MR) effect in structure consisting “Ferromagnetic (FM) metal/Non-magnetic (NM) metal” metallic multilayer (ML) film by treating the interfaces in two different approaches. The calculation of the film in-plane conductivity is realised for two configurations: the FM layers aligned (i) parallel and (ii) antiparallel to each other. The results reveal in the first approach that the MR behaviour is strongly influenced by interfaces state by varying their chemical composition and also their magnitude of its geometric roughness. The scattering effects across non-rough interfaces on the magnetoresistive signal amplitude are observed in the second approach. The results show that a [Substrate//Co(1.1 nm)/Cu(1.1 nm)//Co(1.1 nm)//Capping layer] ML with smooth interfaces exhibit a giant magnetoresistive ratio of 97.5 % for the largest asymmetric spin-dependent scattering.

Interplay between superconducting fluctuations and weak localization in disordered TiN thin films.

The interplay between superconducting fluctuations (SFs) and weak localization (WL) has been probed by temperature dependent resistance [R(T)] and magnetoresistance (MR) measurements in two-dimensional disordered superconducting TiN thin films. Within a narrow range of temperature above transition temperature (Tc), the coexistence of SF-mediated positive MR and WL-led negative MR in different ranges of magnetic fields and a crossover from positive MR to negative MR with an increase in temperature are reported herein. The crossover temperature coincides with a characteristic temperature (Tmax) at which a resistance peak appears in the zero-field R(T). The resistance peak and associated magnetoresistance anomalies are addressed using quantum corrections to conductivity (QCC) theory. We show that WL can be accounted for the observed negative MR. By introducing individual coefficients to both SFs and WL contributions, the dominance of one over the other is monitored with respect to temperature. It is observed that just above Tc, SFs dominate; with an increase in temperature, the contributions from both become comparable; and finally, at Tmax, WL takes over completely. The presented approach may be adopted to compare various quantum contributions in two-dimensional superconductors, particularly in the regime where both SFs and WL are pronounced.

Magnetoresistance (MR) properties of magnetic materials.

In this review, the classification of magnetic materials exhibiting magnetoresistive properties is the focus of discussion because each material possesses different magnetic and electrical properties that influence the resulting magnetoresistance (MR) values. These properties depend on the structure and mechanism of the material. In this overview, the classification of magnetic materials with different structures is examined in several material groups, including the following: (1) perovskite structure (ABO3), (2) alloy, (3) spinel structure, and (4) Kagome magnet. This review summarizes the results of each material's properties based on experimental findings, and serves as a reference for studying the characteristics of each material.

Room-temperature spin-valve devices without spacer layers based on Fe3GaTe2 van der Waals homojunctions.

In the advancement of spintronic devices, spin valves play a critical role, especially in the sensor and information industries. The emergence of two-dimensional (2D) van der Waals (vdW) magnetic materials has opened up new possibilities for the development of high-performance spin-valve devices. However, the Curie temperature (TC) of most 2D vdW ferromagnets falls below room temperature, resulting in a scarcity of room-temperature spin-valve devices. In this study, we have prepared spin-valve devices without spacer layers based on Fe3GaTe2 vdW homojunctions and observed notable two-state magnetoresistance (MR) from 2 K to room temperature. A maximum MR of 50% surpasses some heterojunctions with spacer-layer structures and it remains 0.6% at room temperature. Furthermore, spin-valve devices exhibit favorable ohmic contact and low operating current as low as 10 nA. These findings demonstrate the enormous potential of Fe3GaTe2-based room-temperature devices and the simplified two-layer structure shows significant prospect in the context of the ongoing trend towards miniaturization of contemporary devices.

Heusler-alloy-based magnetoresistive sensor with synthetic antiferromagnet

Heusler alloy has been widely utilized in magnetoresistive sensors to enhance the device performance. In this work, we theoretically investigate the performance of Heusler-alloy-based magnetoresistive sensors with a synthetic antiferromagnet (SAF) layer. The atomistic model combined with the spin accumulation model will be used in this work. The former is used to construct the reader stack and investigate the magnetization dynamics in the system. The latter is employed to describe the spin transport behavior at any position of the structure. We first perform simulations of the exchange bias (EB) phenomenon in the IrMn/ (CFS) system providing a high EB field. Then, a realistic reader stack of IrMn/CFS/Ru/CFS/Ag/CFS is constructed via an atomistic model. Subsequently, the resistance–area product (RA) and magnetoresistance (MR) ratio of the reader can be calculated by using the spin accumulation model. As a result of the spin transport behavior in the Heusler-alloy-based reader stack including SAF structure at 0 K, an enhancement of the MR ratio up to 120 and RA can be observed. This study demonstrates the important role of the Heusler alloy and SAF layer in the development of magnetoresistive sensors for the application of readers in hard disk drives with an areal density beyond 2 Tb in−2.

Negative magnetoresistance in the antiferromagnetic semimetal V1/3TaS2

Intercalated transition metal dichalcogenides (TMDCs) attract much attention due to their rich properties and potential applications. In this article, we grew successfully high-quality V1/3TaS2 crystals by a vapor transport method. We measured the magnetization, longitudinal resistivity ρxx (T, H), Hall resistivity ρxy (T, H), as well as performed calculations of the electronic band structure. It was found that V1/3TaS2 is an A-type antiferromagnet with the Neel temperature T N = 6.20 K, and exhibits a negative magnetoresistance (MR) near T N. Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.

Structural, dielectric, magnetic, optical, and electrical properties of double‐perovskite Sr1.5Mn0.5Fe0.5Hf1.5O6 oxides

AbstractHalf‐metallic ferromagnets (HMFs) exhibit semiconductor behavior for one spin projection and metal characteristics for the other, which have promising applications in spintronics. It is a great challengeable for HMFs to have wide spin energy gap, large saturation magnetization (MS), and high Curie temperature (TC) simultaneously. Here, we report the Sr1.5Mn0.5Fe0.5Hf1.5O6 (SMFHO) double perovskite compounds synthesized by solid‐state reaction and display a magnetic TC up to 804 K due to the strong Mn3+(↑)Fe3+(↑) spin interactions, which is the reported record in perovskite‐type HMFs so far. The measured MS value at 300 K was 4.87 μB/f.u., and it further increased up to 6.09 μB/f.u. at 2 K. The SMFHO powders exhibited butterfly‐shaped magnetoresistance (MR)–H curve at 2 K, and the MR (2 K, 7 T) value was measured as −3.86% due to the intergranular magnetic tunneling effect. Variation of the resistivity of the SMFHO ceramics versus temperature exhibits a semiconductor behavior, and the electrical transport properties of the SMFHO ceramics are well studied by Mott's range jump model, thermally activated semiconductor conductance model and small polaron jumping model, respectively. The optical absorption spectrum of the SMFHO powders demonstrates an indirect optical bandgap of 3.56 eV. Our present work demonstrates the intriguing properties of the SMFHO oxides where high TC, wide energy gap, and large MS value are preserved at the same time, which open the way to their promising applications in advanced spintronic devices at or beyond room temperature.

Granularity mediated multiple reentrances with negative magnetoresistance in disordered TiN thin films

Granular superconductors are the common examples of experimentally accessible model systems which can be used to explore various fascinating quantum phenomena that are fundamentally important and technologically relevant. One such phenomenon is the occurrence of reentrant resistive states in granular superconductors. Here, we report the observation of multiple reentrant resistive states for a disordered TiN thin film in its temperature and magnetic field dependent resistance measurements, R(T) and R(B), respectively. At each of the peak-temperatures corresponding to the zero-field R(T), a resistance peak appears in the R(B) around zero field which leads to a negative magnetoresistance (MR) region in its surrounding. These low-field negative MR regions appear for both perpendicular and parallel field directions with relatively higher amplitude and larger width for the parallel field. By adopting a granularity-based model, we show that the superconducting fluctuations in granular superconductors may lead to the observed reentrant states and the corresponding negative MR. Here, we propose that the reduction in the density of states in the fermionic channel due to the formation of Cooper pairs leads to the reentrant resistive state and the competition between the conduction processes in the single particle and Cooper channels result into the multiple resistive reentrances.

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance (MR) effect in a low static magnetic field environment at room temperature. However, how to obtain a large room-temperature negative MR effect in them remains to be studied. In this paper, by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side, we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment, but not in a static low magnetic field environment. Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory, we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field. This theoretical analytical model is further confirmed by regulating the geometry size of the device. Our work sheds light on the development of novel magnetic sensing, magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

Microstructural Characterization and Magnetic, Dielectric, and Transport Properties of Hydrothermal La2FeCrO6 Double Perovskites.

Double perovskite La2FeCrO6 (LFCO) powders were synthesized via the hydrothermal method, which crystallized in an orthorhombic (Pnma) structure and exhibited a spherical morphology with an average particle size of 900 nm. Fourier transform infrared spectroscopy demonstrated the presence of fingerprints of vibrational modes of [FeO6] and [CrO6] octahedra in the powders. The XPS spectra revealed dual oxide states of Fe (Fe2+/Fe3+) and Cr (Cr3+/Cr4+) elements, and the oxygen element appeared as lattice oxygen and defect oxygen, respectively. The LFCO powders exhibited weak ferromagnetic behavior at 5 K with a Curie temperature of 200 K. Their saturation magnetization and coercive field were measured as 0.31 μB/f.u. and 8.0 kOe, respectively. The Griffiths phase was observed between 200 K and 223 K. A butterfly-like magnetoresistance (MR)-magnetic field (H) curve was observed in the LFCO ceramics at 5 K with an MR (5 K, 6 T) value of -4.07%. The temperature dependence of resistivity of the LFCO ceramics demonstrated their semiconducting nature. Electrical transport data were fitted by different conduction models. The dielectric behaviors of the LFCO ceramics exhibited a strong frequency dispersion, and a dielectric abnormality was observed around 260 K. That was ascribed to the jumping of electrons trapped at shallow levels created by oxygen vacancies. The dielectric loss showed relaxation behavior between 160 K and 260 K, which was attributed to the singly ionized oxygen vacancies.

Structural characterization, electrical and magnetic properties of (In0.97-xFexMg0.03)2O3 films

Structural, electrical, and magnetic properties of (In0.97-xFexMg0.03)2O3 films with different Fe concentration are investigated. The doped Fe ions replace the In1 sites of In2O3 lattice with the mixed-valence of +2 and +3 states and form FeIn1+2VO complex based on the real-space multiple-scattering simulation. The room temperature ferromagnetic hysteresis loop of Fe/Mg co-doped In2O3 films shows ferromagnetic ordering with coercivity Hc of about 150-300 Oe. Obvious increase of ferromagnetic hysteresis loop and saturation magnetic moment with a maximum value of 8.45 emu/cm3 (x = 0.08) are observed due to the more incorporation of Fe ions. All the films exhibit n-type conductive behavior, which are mainly dominated by Mott variable range hopping with strong localization of carriers. Interestingly, the contribution of positive and negative magnetoresistance (MR) strongly correlates with Fe dopant and temperature. It can conclude that the FeIn1+2VO complex based on bound magnetic polaron model plays a key role for achieving the intrinsic ferromagnetism.

Large Room-Temperature Magnetoresistance in a High-Spin Donor-Acceptor Conjugated Polymer.

Open-shell conjugated polymers (CPs) offer new opportunities for the development of emerging technologies that utilize the spin degree of freedom. Their light-element composition, weak spin-orbit coupling, synthetic modularity, high chemical stability, and solution-processability offer attributes that are unavailable from other semiconducting materials. However, developing an understanding of how electronic structure correlates with emerging transport phenomena remains central to their application. Here, the first connections between molecular, electronic, and solid-state transport in a high-spin donor-acceptor CP, poly(4-(4-(3,5-didodecylbenzylidene)-4H-cyclopenta[2,1-b:3,4-b']dithiophen-2-yl)-6,7-dimethyl-[1,2,5]-thiadiazolo[3,4-g]quinoxaline), are provided. At low temperatures (T < 180 K), a giant negative magnetoresistance (MR) is achieved in a thin-film device with a value of -98% at 10 K, which surpasses the performance of all other organic materials. The thermal depopulation of the high-spin manifold and negative MR decrease as temperature increases and at T > 180 K, the MR becomes positive with a relatively large MR of 13.5% at room temperature. Variable temperature electron paramagnetic resonance spectroscopy and magnetic susceptibility measurements demonstrate that modulation of both the sign and magnitude of the MR correlates with the electronic and spin structure of the CP. These results indicate that donor-acceptor CPs with open-shell and high-spin ground states offer new opportunities for emerging spin-based applications.

Proximity Effect-Induced Magnetoresistance Enhancement in a Fe3GeTe2/NbSe2/Fe3GeTe2 Magnetic Tunnel Junction.

The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum ∼17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe3GeTe2 (FGT)/NbSe2/FGT near the NbSe2 layer's superconducting critical temperature (TC) of 6.8 K. This enhancement is attributed to the band splitting in the atomically thin NbSe2 spacer layer induced by the magnetic proximity effect on the material interfaces. However, the band splitting is strongly suppressed by the interlayer coupling in the thick NbSe2 layer. Correspondingly, the device with a thick NbSe2 layer displays no MR increase near TC but a current dependent on transport properties at extremely low temperatures. This work carefully investigates the mechanism of MR enhancement, paving an efficient way for the modulation of spintronics' properties and the achievement of spin-based integrated circuits.