Magnetoresistance In Magnetic Tunnel Junctions Research Articles

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Large tunnel magnetoresistance in magnetic tunnel junctions with magnetic electrodes of metastable body-centered cubic CoMnFe alloys

A magnetic tunnel junction (MTJ) is a key device in spintronics applications, such as magnetoresistive random access memory (MRAM). Current standard magnetic material for MTJs is a body-centered cubic (bcc) FeCo(B), which shows large tunnel magnetoresistance (TMR) and high perpendicular magnetic anisotropy (PMA), both are crucial for high-memory capacities MRAM. It is demanded that magnetic materials showing TMR as well as PMA higher than FeCo(B) for further advance. One of alternative magnetic materials may be bcc Co since past ab-initio studies predict that bcc Co show large TMR effect in MgO-barrier MTJs and large PMA due to magneto-elastic effect for those strained state. However, bcc Co is thermodynamically unstable; thus, it is aimed to explore metastable bcc Co based alloys with high stability. Here, we propose metastable bcc Co based alloy with adding both Mn and Fe as a candidate. We study in-plane magnetized MTJs utilizing metastable bcc CoMnFe films as electrodes and demonstrate large TMR effect of 350% at 300 K and of 1002% at 5 K. This experimental finding will open a route to advanced bcc Co based magnetic material for MRAM applications.

Inverse tunnel magnetoresistance of magnetic tunnel junctions with a NiCo2O4 electrode

Inverse spinel oxide NiCo2O4 (NCO) is known to exhibit ferrimagnetic characteristics and electrical conductivity. First-principles calculations predict NCO to be a half-metal with a negative polarization of −100%. In this study, we fabricated epitaxial NCO/MgO/Fe magnetic tunnel junctions by reactive molecular beam epitaxy and observed an inverse tunnel magnetoresistance (TMR) effect of −19.1% at 14 K, indicating that NCO has negative spin polarization. The TMR ratio monotonically decreased with increasing temperature, which was attributed to the temperature dependence of the NCO surface magnetization due to the thermal excitation of spin waves. In addition, the TMR ratio displayed strong bias voltage dependence, decreasing to less than half of the maximum value at +20 and −30 mV. These findings support the use of NCO in spintronic devices and should lead to further developments in oxide spintronics.

Large Magnetoresistance in Magnetic Tunnel Junction Based on Ni-Adsorbed CrI 3 with Half-Metallicity

Two-dimensional (2D) materials, especially the materials that have intrinsic ferromagnetism (FM), have attracted considerable attention due to their ultraclean interface, controllable stacking order, good flexibility, and other excellent characteristics. However, the low Curie temperature (T C ) has limited their practical applications in spintronic devices. Here, we present an approach to enhance the ferromagnetism of the monolayer CrI 3 by adsorbing the transition metal atoms (Fe, Co, and Ni) through the first-principles calculation. Interestingly, the Ni-adsorption of monolayer CrI 3 has improved the T C to 167 K and introduced the half-metallic feature with a large energy gap of 1.9 eV, which means a high spin polarization rate close to 100%. We further calculate the magnetic tunnel junction formed by the AB stacking bilayer Ni-adsorbed CrI 3 , which has layer number-dependent magnetic ordering temperature and FM interlayer exchange interaction, by combining density functional theory and the Keldysh nonequilibrium Green’s function. The transport properties calculation results show that the tunnel magnetoresistance (TMR) of this device can reach a large value of 3.94 × 10 4 % due to the half-metallicity induced large spin polarization. The enhanced T C , half-metallicity, and large TMR in magnetic tunnel junctions imply that 2D Ni-adsorbed CrI 3 has great potential in practical spintronic applications.

Demonstration of reconfigurable magnetic tunnel diode and giant tunnel magnetoresistance in magnetic tunnel junctions made with spin gapless semiconductor and half-metallic Heusler alloy

Here, we report fabrication of a high quality exchanged biased trilayer magnetic tunnel junction (MTJ) utilizing a magnetron sputtering system. The MTJ is composed of a type-II spin gapless semiconductor (SGS) Ti2CoSi inverse Heusler alloy (used as a lower electrode), a thin MgO layer (used as a tunnel barrier), and a half-metallic ferromagnet (HMF) Co2MnSi Heusler alloy (used as an upper electrode). Spin dependent transport properties reveal that the micro-fabricated MTJ can act as a reconfigurable magnetic tunnel diode, which lets the electric current to flow in either the forward or reverse path relying on the relative alignment of the magnetization direction of the upper and lower magnetic electrodes. A considerably high on/off current ratio (∼103) and a significantly low turn on voltage (VT) of 0.09 V have been achieved at 5 K for both parallel and antiparallel configurations. Another important characteristic shown by our fabricated MTJ is that it exhibits extremely large tunnel magnetoresistance ratios of 892% at 5 K and 197% at room temperature, which brings to light the utmost importance of using the combination of HMF and SGS materials as magnetic electrodes in a tunnel junction for potential applications in modern spintronic devices. All these exceptional features can undoubtedly nominate CMS/MgO/TCS MTJs as a promising candidate to serve as memory or logic elements in next generation ultra-high density magnetoresistive random access memories together with contemporary spin based electronic devices.

Surface acoustic wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

We show that a surface acoustic wave (SAW) applied across the terminals of a magnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel and antiparallel resistances of the MTJ, with the latter decreasing much more than the former. This results in a decrease in the tunneling magnetoresistance ratio. The coercivities of the free and fixed layers of the MTJ, however, are not affected significantly, suggesting that the SAW does not cause large-angle magnetization rotation in the magnetic layers through the inverse magnetostriction (Villari) effect at the power levels used. This study sheds light on the dynamical behavior of an MTJ under periodic compressive and tensile strain.

Gigantic tunneling magnetoresistance in magnetic Weyl semimetal tunnel junctions.

We investigate the tunneling magnetoresistance in magnetic tunnel junctions (MTJs) comprised of Weyl semimetal contacts. We show that chirality-magnetization locking leads to a gigantic tunneling magnetoresistance ratio, an effect that does not rely on spin filtering by the tunnel barrier. Our results indicate that the conductance in the anti-parallel configuration is more sensitive to magnetization fluctations than in MTJs with normal ferromagnets, and predicts a TMR as large as 104 % when realistic magnetization fluctuations are accounted for. In addition, we show that the Fermi arc states give rise to a non-monotonic dependence of conductance on the misalignment angle between the magnetizations of the two contacts.

Tunnel magnetoresistance in magnetic tunnel junctions with FeAlSi electrode

(001)-oriented FeAlSi polycrystalline thin films with a flat surface and B2-ordered structure were grown on thermally oxidized SiO2 substrates using MgO buffer layers. The FeAlSi thin films composition-adjusted to the Sendust alloy exhibited a low coercivity (Hc) after the annealing process. We utilized these films as bottom electrodes of magnetic tunnel junctions (MTJs) and characterized their tunnel magnetoresistance (TMR) effect. The TMR effect was 35.9% at room temperature. In addition, the TMR ratio increased to 51.0% when a thin CoFeB layer was inserted into the FeAlSi/MgO interface, without degrading the small switching field of the FeAlSi electrode. These MTJs with a small switching field and relatively high TMR ratio using the FeAlSi electrode are promising for highly sensitive MTJ-based magnetic sensor devices.

Novel magnetoresistance explorations and multistate data storage applications

Novel spintronic devices with low power consumption, nonvolatility, and high storage density are highly desired to meet the rapid development of modern information storage and communication technology, which poses a great challenge to both material and device researches. To overcome this challenge, our group has focused our research on the following two aspects. On one hand, we have explored novel magnetoresistance effects in a variety of materials and devices, aiming to get a deep understanding about the spin dependent transport and obtain an effective control of spin-dependent transport. On the other hand, we have tried to control the magnetoresistance based on multi-physical field effects, aiming to obtain spintronic prototype devices that can be used for multi-state data storage. Regarding the novel magnetoresistance explorations, this article will introduce: (1) The negative magnetoresistance in amorphous condensed magnetic semiconductors. The spin dependent variable range hopping model is proposed, which can quantitatively explain the temperature and magnetic field dependent transport behavior in the condensed magnetic semiconductors. In addition, this model provides an alternative way to detect the spin polarization ratio of the magnetic semiconductors. (2) The positive magnetoresistance in single-crystal CoZnO magnetic semiconductors. By quantitative analysis of the transport properties of CoZnO films, it is observed that the positive magnetoresistance in the “hard gap” regime is the result of the carrier wavefunction shrinkage under applied magnetic field. (3) The rectification magnetoresistance in non-magnetic Schottky heterojunctions and the tunneling rectification magnetoresistance in magnetic tunnel junctions. A brand new rectification magnetoresistance is observed in nonmagnetic Al/Ge Schottky heterojunctions: The application of a pure small sinusoidal alternating current to the nonmagnetic Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. Moreover, by using CoO-ZnO composite tunneling barrier, the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated into the Co/CoO-ZnO/Co magnetic tunneling junctions to realize the tunneling rectification magnetoresistance. The observation of rectification magnetoresistance and tunneling rectification magnetoresistance not only adds new members to the magnetoresistance family, but also provides a promising way to control the devices’ properties by using alternating current. In terms of multistate data storage application, this review will introduce: (1) The electrical and magnetic field controllable 4 resistance states in oxide heterojunctions. In Co/CoO-ZnO/Co magnetic tunneling junctions, by integrating the electrical field induced resistance switching and the magnetic field induced tunneling magnetoresistance effects, four nonvolatile resistance states are demonstrated. (2) The remanent magnetization controllable 10 resistance states in magnetic heterojunctions. Here, a general remanent magnetism engineering method is proposed for realizing multiple reliable magnetic and resistance states, not depending on a specific material or device structure. Especially, as a proof-of-concept demonstration, ten states of nonvolatile memory based on the manipulation of ferromagnetic remanent magnetization have been revealed in both Co/Pt magnetic multilayers with strong perpendicular magnetic anisotropy and MgO-based magnetic tunneling junctions at room temperature. (3) The spin-orbit torque controllable 10 resistance states in single-layer magnetic alloy. A repeatable bulk spin-orbit torque switching of the perpendicularly magnetized CoPt alloy single-layer films is realized by introducing a composition gradient in the thickness direction to break the inversion symmetry. Moreover, a ten states nonvolatile memory is illustrated solely by changing the electrical current to control the multi-domain states of the CoPt alloy.

High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Subnanometer Thick Al2O3 Tunnel Barriers Fabricated Using Atomic Layer Deposition.

Pinhole-free and defect-free ultrathin dielectric tunnel barriers (TBs) are a key to obtaining high-tunneling magnetoresistance (TMR) and efficient switching in magnetic tunnel junctions (MTJs). Among others, atomic layer deposition (ALD) provides a unique approach for the fabrication of ultrathin TBs with several advantages including atomic-scale control over the TB thickness, conformal coating, and a low defect density. Motivated by this, this work explores the fabrication and characterization of spin-valve Fe/ALD-Al2O3/Fe MTJs with an ALD-Al2O3 TB thickness of 0.55 nm using in situ ALD. Remarkably, high TMR values of ∼77 and ∼90% have been obtained, respectively, at room temperature and at 100 K, which are comparable to the best reported values on MTJs having thermal AlOx TBs with optimized device structures. In situ scanning tunneling spectroscopy characterization of the ALD-Al2O3 TBs has revealed a higher TB height (Eb) of 1.33 ± 0.06 eV, in contrast to Eb ∼ 0.3-0.6 eV for their AlOx TB counterparts, indicative of significantly lower defect concentrations in the former. This first success of the MTJs with subnanometer thick ALD-Al2O3 TBs demonstrates the feasibility of in situ ALD for the fabrication of pinhole-free and low-defect ultrathin TBs for practical applications, and the performance could be further improved through device optimization.

Effects of proton and ion beam radiation on magnetic tunnel junctions

Conventional semiconductor-based electronic devices can cause errors when they are exposed to cosmic rays. Magnetic memory has been proposed as an alternative because it consists of a metal structure free from radiation-induced errors in principle. In this study, we investigated the effects of proton and Cr ion irradiations on the magnetic and electric properties of a magnetic tunnel junction (MTJ). We observed that the magnetic hysteresis and magnetoresistance of MTJ were not affected by proton irradiation of an energy of 20 MeV and dose levels up to 1 × 1018/m2, thus demonstrating good radiation hardness in response to the proton beam. On the other hand, when a MTJ was irradiated by a Cr ion beam of an energy of 20 keV and dose levels up to 1 × 1018/m2, its magnetic properties or magnetoresistance deteriorated, depending on the layer structure of the MTJ. A simulation study shows that this degradation may stem from radiation-energy dependent displacement damage in the magnetic layers, which can be avoided by the introduction of a proper protective layer.

Perpendicular Spin-Transfer-Torque Magnetic Tunnel Junction Multi-Level Cell with Dual Free Layers and MgO Tunnel Barriers

Perpendicular spin-transfer-torque magnetic random access memory (p-STT-MRAM) is a promising candidate memory device for replacing dynamic random access memory (DRAM) facing with 10-nm sub scaling down. In addition to scaling down, p-STT MRAM has many advantages like fast write/read speed (~10ns) as DRAM, low power consumption (<1pJ), high endurance (>1014), and non-volatility (retention time > 10 years). But to replace DRAM, there are several challenges to be solved. First, high tunneling magneto-resistance (TMR) ratio for read sensing margin. Second, low critical current density(J C) for low power consumption. Third, thermal stability(Δ) for long retention time to save data. And also these parameters should be achieved at 350oC annealing temperature of the back-end-of line (BEOL) to be commercialized. Among them, thermal stability is closely related with cell size. As a cell size of MTJ decreases to achieve a high density memory device, thermal stability decreases with retention time, thus it is not easy to implement both high density and non-volatile memory device simultaneously by decreasing the cell size of MTJ. In our study to solve this issue, we propose the p-STT multi-level cell (MLC) magnetic tunnel junction (MTJ) because MLC MTJ can satisfy both high density and non-volatile memory device at the same time. In particular, we design the MTJ structure with dual free layers and MgO tunnel barriers, so that the MTJ can demonstrate four resistance states. In addition, we investigated the effect of the thickness of two free layers and MgO tunnel barriers on two magneto-resistance (MR) and switching voltage. In our experiments, the p-STT MTJ spin-valves were fabricated on 12-inch-diameter Si/ SiO2/W/TiN wafers by utilizing a 12-in. multi-chamber-cluster magnetron-sputtering system under a high vacuum (less than 110-8 Torr) without breaking the vacuum. Then, all samples were subject to ex-situ annealing at 350℃ at a back end of line (BEOL) for 30 minutes under a magnetic field of 3 tesla. In our presentation, we present how to optimize the thicknesses of two free layers and MgO tunnel barriers. In addition, we repot how the magnetic behavior and the resistance of MTJ is affected by magnetic and how the magneto-resistance of MTJ is closely related to the crystallinity of two MgO tunnel barriers. Acknowledgements This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2017R1A2A1A05001285)

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

Electrically switchable magnetization is considered a milestone in the development of ultralow power spintronic devices, and it has been a long sought-after goal for electric-field control of magnetoresistance in magnetic tunnel junctions with ultralow power consumption. Here, through integrating spintronics and multiferroics, we investigate MgO-based magnetic tunnel junctions on ferroelectric substrate with a high tunnel magnetoresistance ratio of 235%. A giant, reversible and nonvolatile electric-field manipulation of magnetoresistance to about 55% is realized at room temperature without the assistance of a magnetic field. Through strain-mediated magnetoelectric coupling, the electric field modifies the magnetic anisotropy of the free layer leading to its magnetization rotation so that the relative magnetization configuration of the magnetic tunnel junction can be efficiently modulated. Our findings offer significant fundamental insight into information storage using electric writing and magnetic reading and represent a crucial step towards low-power spintronic devices.

Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions

It has been reported in experiments that capping layers, which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs), induce a great impact on the tunnel magnetoresistance (TMR). To explore the essential influence caused by the capping layers, we carry out ab initio calculations on TMR in the X(001)|CoFe(001)|MgO(001)|CoFe(001)|X(001) MTJ, where X represents the capping layer material, which can be tungsten, tantalum, or hafnium. We report TMR in different MTJs and demonstrate that tungsten is an ideal candidate for a giant TMR ratio. The transmission spectrum in Brillouin zone is presented. It can be seen that in the parallel condition of MTJ, sharp transmission peaks appear in the minority-spin channel. This phenomenon is attributed to the resonant tunnel transmission effect, and we explained it by the layer-resolved density of states. In order to explore transport properties in MTJs, the density of scattering states was studied from the point of band symmetry. It has been found that CoFe|tungsten interface blocks scattering states transmission in the anti-parallel condition. This work reports TMR and transport properties in MTJs with different capping layers and proves that tungsten is a proper capping layer material, which would benefit the design and optimization of MTJs.

Calculation of Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Particle Size Dispersion

Simulation results are given for electron tunneling through the insulating layer of a magnetic tunnel junction with embedded nonmagnetic nanoparticles (NPs). The size dispersion of the NPs was an important part of the solution for tunnel magnetoresistance, which was calculated on the basis of the double-barrier model. Theoretical agreement with experimental data was achieved by adjusting the NP dispersion and quantization. A step-like quantization related to the initial distribution of the electrons over quantum-well states was considered for different size NPs.

Effects of quantum-well states on the tunneling magnetoresistance in magnetic tunnel junctions

When a nonmagnetic spacer is inserted between the insulator and the ferromagnetic layer in magnetic tunnel junctions (MTJs), spin-polarized quantum-well (QW) states may be formed in the nonmagnetic layer. We theoretically investigate the effect of the QW states on the tunneling magnetoresistance (TMR) in MTJs with an inserted nonmagnetic spacer using a free-electron model. When the spin-dependent confinement caused by the ferromagnetic layer is very strong, the TMR may converge to a finite value as a function of the nonmagnetic spacer thickness, and another oscillation period related to the QW state may appear.

Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles

In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be easily simulated within our model: we found, that the suppressed TMR magnitudes and the TMR sign-reversing effect at small voltages are related to the electron momentum states of the NP located inside the insulating layer. All these TMR behaviors can be explained within the tunneling model, where NP is simulated as a quantum well (QW). The coherent (direct) double barrier tunneling is dominating over the single barrier one. The origin of the TMR suppression is the quantized angle transparency for spin polarized electrons being in one of the lowest QW states. The phenomenon was classified as the quantized conductance regime due to restricted geometry.

Investigation of epitaxial growth and tunnel magnetoresistance effects in magnetic tunnel junctions including spinel ferrite layers

The combination of magnetic tunnel junctions (MTJs) and magnetic insulating (MI) layers has attracted much attention because of its potential as novel spintronic devices. To realize such devices, the epitaxial growth and magnetoresistance of MTJs with spinel ferrite were investigated. Non-magnetic (NM) layers were inserted between the MTJs and MI layers as magnetic decoupling layers, the epitaxial growth of which was important to obtain high-quality epitaxial multilayers. Multilayers of MTJ/NM/MI and MI/NM/MTJ were fabricated and tunnel magnetoresistance (TMR) values of 70 and 50% at room temperature, respectively, were observed. The shape of the magnetoresistance curve depended on the sample structure.

Interface magnetism of Co2FeGe Heusler alloy layers and magnetoresistance of Co2FeGe/MgO/Fe magnetic tunnel junctions

The interface magnetism between Co2FeGe Heusler alloy layers and MgO layers was investigated using 57Fe Mössbauer spectroscopy. Interface-sensitive samples, where the 57Fe isotope was used only for the interfacial atomic layer of the Co2FeGe layer on the MgO layer, were prepared using atomically controlled alternate deposition. The 57Fe Mössbauer spectra of the interface-sensitive samples at room temperature were found similar to those of the bulk-sensitive Co2FeGe films in which the 57Fe isotope was distributed throughout the films. On the other hand, the tunnel magnetoresistance effect of magnetic tunnel junctions with Co2FeGe layers as the ferromagnetic electrodes showed strong reduction at room temperature. These results indicate that the strong temperature dependence of the tunneling magnetoresistance of magnetic tunnel junctions using Heusler alloy electrodes cannot be attributed simply to the reduction of the magnetization at the interfaces between the Heusler alloy and insulator layers.

Time-resolved synchrotron x-ray diffraction studies of the crystallization of amorphous Co(80−x)FexB20

This paper addresses the time-dependent crystallization process occurring in “bulk” amorphous Co80−xFexB20 (x = 20, 40) metallic ribbons by means of synchrotron x-ray diffraction (SXRD) and transmission electron microscopy. Metallic ribbons, produced via melt-spinning technique, were annealed in-situ, with SXRD patterns collected every 60 s. SXRD reveals that Co40Fe40B20 alloys crystallize from an amorphous structure to a primary bcc α-(Co,Fe) phase, whereas Co60Fe20B20 initially crystallizes into the same bcc α-(Co,Fe) but exhibits cooperative growth of both stable and metastable boride phases later into the hold. Johnson-Mehl-Avrami-Kolmogorov statistics was used on post annealed samples to determine the mechanisms of growth and the activation energy (Ea) of the α-(Co,Fe) phase. Results indicate that the growth mechanisms are similar for both alloy compositions for all annealing temperatures, with the Avrami exponent of n = 1.51(1) and 2.02(6) for x = 20 and 40, respectively, suggesting one-dimensional growth, with a decreasing nucleation rate. Activation energy for α-(Co,Fe) was determined to be 2.7(1) eV and 2.4(3) eV in x = 20 and 40, respectively, suggesting that those alloys with a lower Co content have a stronger resistance to crystallization. Based on these results, fabrication of CoFeB magnetic tunnel junctions via depositing amorphous layers and subsequently annealing to induce lattice matching presents itself as a viable and efficient method, for increasing the giant magnetoresistance in magnetic tunnel junctions.