Abstract
(001)-oriented FeAlSi polycrystalline thin films with a flat surface and B2-ordered structure were grown on thermally oxidized SiO2 substrates using MgO buffer layers. The FeAlSi thin films composition-adjusted to the Sendust alloy exhibited a low coercivity (Hc) after the annealing process. We utilized these films as bottom electrodes of magnetic tunnel junctions (MTJs) and characterized their tunnel magnetoresistance (TMR) effect. The TMR effect was 35.9% at room temperature. In addition, the TMR ratio increased to 51.0% when a thin CoFeB layer was inserted into the FeAlSi/MgO interface, without degrading the small switching field of the FeAlSi electrode. These MTJs with a small switching field and relatively high TMR ratio using the FeAlSi electrode are promising for highly sensitive MTJ-based magnetic sensor devices.
Highlights
A free layer material with both low Hk and a high tunnel magnetoresistance (TMR) ratio could be used to improve the sensitivity of magnetic tunnel junctions (MTJs) sensors
We focused on the Sendust alloy (Fe85Al5.4Si9.6 wt. %; hereinafter “FeAlSi”), which is a promising candidate with these properties
The structure and composition of the FeAlSi alloy are similar to those of bcc-Fe,13,14 and MTJs with an FeAlSi electrode can be expected to have a high TMR ratio due to Δ1 coherent tunneling through the MgO tunneling barrier
Summary
Tunnel magnetoresistance of 604% at by suppression of Ta diffusion in pseudo-spin-valves annealed at high temperature.
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