Magnetoresistance In Junctions Research Articles

Investigations on full-Heusler alloys Mn2TaAl and Mn2WAl for spintronic and thermoelectric applications

Half-metallic materials are widely used as spintronic devices such as electrodes, magnetic tunnelling junction and giant magnetoresistance etc. In this work, we have systematically investigated the structural stability, Gilbert damping, electronic structure and magnetism together with exchange interactions and Curie temperatures for Mn2TaAl and Mn2WAl alloys. Initially, we estimate their structural stability and offer possible phase synthesis. Subsequently, the Gilbert damping parameters calculated by the linear response theory are used to assess their response speed as spintronic materials. Furthermore, the Mn2TaAl and Mn2WAl are predicted to be half-metallic and nearly half-metallic ferrimagnets, their total magnetic moments obey the Mt=Zt-18 rule. Accordingly, their Curie temperatures for Mn2TaAl and Mn2WAl are also evaluated by the mean-field approximation. Finally, their thermodynamic parameters within 0∼600 K and thermoelectric properties within 200∼900 K are discussed. Overall, our research for Mn2TaAl and Mn2WAl alloys might provide some valuable clues for their application in spintronic devices.

Near zero-field magnetoresistance and defects in gallium nitride pn junctions

As gallium nitride (GaN) grows in importance, an atomic scale understanding of device performance is of significant relevance. In this paper, we present the first observations of near zero-field magnetoresistance (NZFMR) detecting electrically active defects in GaN-based devices. Our observations involve recombination current in GaN pn junction diodes. We attribute the NZFMR response to gallium vacancies.

Giant tunnel magnetoresistance in in-plane magnetic tunnel junctions based on the heterointerface-induced half-metallic 2H-VS[formula omitted]

Magnetic tunnel junctions (MTJs) constructed from atomically thin two-dimensional (2D) magnetic materials have attracted great attention in recent years because it meets the requirements of miniaturization and high tunability of next-generation spintronic devices. In this work, we demonstrate that the ferromagnetic semiconductor VS2 is transformed into a half-metal in VS2/MoSSe vdW heterostructure. Based on the heterostructure, we design an in-plane MTJs that comprise a monolayer VS2 barrier sandwiched between two VS2/MoSSe heterostructure electrodes. Through density functional calculations combined with a nonequilibrium Green’s function technique, it is found that the tunnel magnetoresistance (TMR) ratio as high as 4.35 × 109% can be achieved. Moreover, the TMR ratio can be tuned by the barrier length, and the maximum value exceeds 1015%. These results not only provide a novel route for designing MTJs using 2D ferromagnetic semiconductor material, but also demonstrate the great importance of vdW heterostructures in the design of spintronic devices.

Anomalous negative magnetoresistance in quantum dot Josephson junctions with Kondo correlations

Anomalous negative magnetoresistance in quantum dot Josephson junctions with Kondo correlations

Effect of Ferromagnet/Organic Semiconductor Interface Defect States on Tunnel Magnetoresistance of Hybrid Magnetic Tunnel Junctions

Herein, analytical modeling of Fe3O4/x(≈1.1 nm)/Co (x = rubrene, C60, and bathocuproine (BCP)) magnetic tunnel junctions (MTJs) has been performed using rubrene, C60, and BCP as organic spacer layers. The simulation is considered as nonequilibrium Green's function assuming spin precession at ferromagnet/organic semiconductor (FM/OSC) interface defect states. The voltage‐dependent resistances for both parallel (RP) and antiparallel (RAP) orientations have been observed to be dependent on spin injection from FM/OSC defect states. Pinning well‐dependent defect state depths have been associated with band misalignment‐induced lattice distortion at FM/OSC interface of the devices. The large tunnel magnetoresistance (TMR) response for rubrene‐based MTJ device has been attributed to a higher change of FM/OSC defect state depths with voltage. High TMR may have reduced spin torque‐dependent spin precession, leading to lower spin transfer torque for the rubrene device. Hence, engineering of defect states at the FM/OSC interface may lead to the successful realization of enhanced TMR in organic spacer MTJs for high‐performance spintronic memory applications.

Magnetoresistance and Magnetocapacitance Effect in Magnetic Tunnel Junction with Perpendicular Anisotropy of Magnetic Electrodes Tb22−δCo5Fe73/Pr6O11/Tb19−δCo5Fe76

This paper presents the results of studies of the effects of magnetoresistance and magnetocapacitance in magnetic tunnel junctions [Formula: see text]Co5[Formula: see text]/Pr6[Formula: see text]/[Formula: see text]Co5[Formula: see text] with perpendicular anisotropy of magnetic electrodes and a paramagnetic barrier layer. Experimentally measured values of tunnel magnetic resistance and tunnel magnetic capacitance in such contacts exceed 100% at room temperature. The paper analyzes the effect of magnetization reversal of one of the electrodes on the conductivity of magnetic tunnel junctions with electrodes that have perpendicular anisotropy. It is shown that significant changes in tunnel magnetic resistance and tunnel magnetic capacity in such contacts can be explained by the separation of electrons with major and minor spin polarization in the inverse nanolayer in the interface region. The separation of polarized electrons is caused by the magnetomotive force acting on the electron spin in a strongly gradient magnetic field. Such a magnetomotive force occurs with antiparallel magnetization of the magnetic electrodes and it has opposite directions for major and minor polarized electrons. As a result of the spatial separation of polarized electrons in the inversion layer, an inhomogeneous distribution of the electron density along the direction of magnetization of the magnetic contacts occurs. As a result, an additional Coulomb barrier between the magnetic electrodes and the dielectric nanolayer appears in the tunnel contacts and an additional spin capacitance appears.

Theory of electron spin resonance in scanning tunneling microscopy

Electron spin resonance (ESR) spectroscopy in scanning tunneling microscopy (STM) has enabled probing the electronic structure of single magnetic atoms and molecules on surfaces with unprecedented energy resolution, as well as demonstrating coherent manipulation of single spins. Despite this remarkable success, the field could still be greatly advanced by a more quantitative understanding of the ESR-STM physical mechanisms. Here, we present a theory of ESR-STM that quantitatively models not only the ESR signal itself, but also the full background tunneling current, from which the ESR signal is derived. Our theory is based on a combination of Green's function techniques to describe the electron tunneling and a quantum master equation for the dynamics of the spin system along with microwave radiation interacting with both the tunneling current and the magnetic system. We show that this theory is able to quantitatively reproduce the experimental results for a spin-1/2 system (TiH molecules on MgO) across many orders of magnitude in tunneling current, providing access to the relaxation and decoherence rates that govern the spin dynamics due to intrinsic mechanisms and to the applied bias voltage. More importantly, our work establishes that (i) sizable ESR signals, which are a measure of microwave-induced changes in the junction magnetoresistance, require surprisingly high tip spin polarizations, and (ii) the coupling of the magnetization dynamics to the microwave field gives rise to the asymmetric ESR spectra often observed in this spectroscopy. Additionally, our theory provides very specific predictions for the dependence of the relaxation and decoherence times on the bias voltage and the tip-sample distance. Finally, with the help of electromagnetic simulations, we find that the transitions in our ESR-STM experiments, in which the tunnel junction is irradiated by a nearby microwave antenna, can be driven by the ac magnetic field at the junction. Published by the American Physical Society 2024

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Anisotropic spin transport and photoresponse characteristics detected by tip movement in magnetic single-molecule junction

Orientation-dependent transport properties induced by anisotropic molecules are enticing in single-molecule junctions. Here, using the first-principles method, we theoretically investigate spin transport properties and photoresponse characteristics in trimesic acid magnetic single-molecule junctions with different molecular adsorption orientations and electrode contact sites. The transport calculations indicate that a single-molecule switch and a significant enhancement of spin transport and photoresponse can be achieved when the molecular adsorption orientation changes from planar geometry to upright geometry. The maximum spin polarization of current and photocurrent in upright molecular junctions exceeds 90%. Moreover, as the Ni tip electrode moves, the tunneling magnetoresistance of upright molecular junctions can be increased to 70%. The analysis of the spin-dependent PDOS elucidates that the spinterfaces between organic molecule and ferromagnetic electrodes are modulated by molecular adsorption orientation, where the molecule in upright molecular junctions yields higher spin polarization. Our theoretical work paves the way for designing spintronic devices and optoelectronic devices with anisotropic functionality base on anisotropic molecules.

Resonant tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin-gapless semiconductor VSi2P4

Schematics (a and b) and eigenstates (c and d) of 1H (a and c) and 3H (b and d) devices.

Tuning magnetoresistance of chromium chloride tunnel junction through the interface and multi-field effect

<sec>Magnetic tunnel junctions (MTJs) serve as essential platforms for investigating spin transport properties, magnetic phase transitions, and anisotropy in magnetic materials. Recently two-dimensional van der Waals antiferromagnetic insulators like chromium chloride (CrCl<sub>3</sub>) or chromium iodide (CrI<sub>3</sub>) have been used to develop spin-filtering magnetic tunnel junctions (sf-MTJs), improving the device performance for material property exploration and spintronic applications. However, it is crucial to recognize that the spin-filtering effect is not the sole determining factor of tunneling magnetoresistance (TMR) in these junctions; the interface magnetic exchange interactions and adjustable electrode density of states (DOS) fluctuations, response to applied electric or magnetic fields, can also influence the tunneling current.</sec><sec>In this study, we fabricate MTJ devices by using mechanically-exfoliated few-layer CrCl<sub>3</sub> as the tunnel barrier and few-layer graphene (FLG) as electrodes through dry transfer technique. Conducting low-temperature quantum transport measurements, we observe unconventional TMR behaviors, including bias-voltage-dependent TMR, oscillatory tunneling current under high magnetic fields, and tunable tunneling current via gate voltage.</sec><sec>A qualitative model of elastic tunneling current is employed to analyze the spin and band characteristics of the MTJ device. The observed bias-voltage-dependent TMR is attributed to the changes in the tunneling mechanism due to magnetic proximity effect, which induces magnetization in the FLG electrode near the FLG/CrCl<sub>3</sub> interface. The antiparallel alignment of polarized spin to CrCl<sub>3</sub>’s magnetization results in injected charge carriers facing a higher tunnel barrier, leading to negative TMR at lower bias voltages. As the bias voltage increases, the magnetic proximity effect lessens, and the device reverts to its conventional spin-filtering functionality. The oscillatory tunneling current is explained by the graphene electrode’s quantum oscillatory density of states behavior under vertical magnetic fields, which can be controlled by the applied gate voltage.</sec><sec>This study contributes to the understanding of previously unexplored TMR phenomena in two-dimensional MTJs, deepening our insights into carrier transport properties in these heterostructures and broadening avenues for investigating the physical properties of two-dimensional magnetic materials and their spintronic applications.</sec>

Giant tunnel magnetoresistance induced by thermal bias

We analyze the spin-resolved transport and, in particular, the tunnel magnetoresistance of an asymmetric ferromagnetic tunnel junction with an embedded quantum dot or molecule subject to thermal and voltage bias in the nonlinear response regime. We demonstrate that such system exhibits a giant tunnel magnetoresistance effect that can be tuned by gate and bias voltages. Large values of magnetoresistance are associated with the interplay between the Kondo correlations and the ferromagnetic-contact-induced exchange field. In particular, we show that the nonequilibrium current in the parallel and antiparallel magnetic configuration of the system changes sign at different values of the voltage and thermal bias. This gives rise to giant values of magnetoresistance, the sign of which can be controlled by the applied sources.

Excellent spin filtering and significant magnetoresistance of rhenium phthalocyanine molecular junctions on Au(100)

Spin transport properties of single rhenium phthalocyanine (RePc) and double-rhenium phthalocyanine (Re2Pc2) molecular devices with gold electrodes have been investigated by combining Density Functional theory and nonequilibrium Green’s functions. It was found that the RePc molecular devices exhibited good spin filtration efficiency in the small bias range even in the absence of magnetic electrodes. The Re2Pc2 molecular device exhibited a large magnetoresistance and excellent spin-filtering properties at a finite bias, which can only be achieved by altering the magnetization orientation of the rhenium atom at the center of the phthalocyanine molecule. These conclusions of the rhenium phthalocyanine molecule may have potential application in magnetoresistive devices and spin filters.

Effect of spin-orbit coupling within the spin-filter layer on the tunnel magneto-resistance in spin-filter magnetic tunnel junctions

The tunnel magneto-resistance ratio is investigated for spin-filter magnetic tunnel junctions in the presence of spin–orbit coupling within a spin-filter layer. The non-equilibrium Green’s function formalism is utilized to calculate the transmission function in the linear-response limit. The results show that a larger tunnel magneto-resistance is achieved for spin-filter magnetic tunnel junctions compared to that for conventional magnetic tunnel junctions due to the existence of a spin-filter layer. Therefore, the current findings can be introduced new routes to improve the field of spintronics.

Transport across junctions of altermagnets with normal metals and ferromagnets

Altermagnet (AM) is a novel time reversal symmetry broken magnetic phase with d-wave order which has been experimentally realized recently. We discuss theoretical models of AM based systems on lattice and in continuum. We show equivalence between the lattice and continuum models by mapping the respective parameters. We study (i) AM-normal metal and (ii) AM-ferromagnet (FM) junctions, with the aim to quantify transport properties such as conductivity and magnetoresistance. We find that a spin current accompanies charge current when a bias is applied. The magnetoresistance of AM-FM junction switches sign when AM is rotated by 90∘—a feature unique to the altermagnetic phase.

Magnetoresistance and spin-dependent Seebeck effects in phthalocyanine-based molecular junctions with borophene electrodes

Magnetoresistance and spin-dependent Seebeck effects in phthalocyanine-based molecular junctions with borophene electrodes

Large tunnel magnetoresistance in magnetic tunnel junctions with magnetic electrodes of metastable body-centered cubic CoMnFe alloys

A magnetic tunnel junction (MTJ) is a key device in spintronics applications, such as magnetoresistive random access memory (MRAM). Current standard magnetic material for MTJs is a body-centered cubic (bcc) FeCo(B), which shows large tunnel magnetoresistance (TMR) and high perpendicular magnetic anisotropy (PMA), both are crucial for high-memory capacities MRAM. It is demanded that magnetic materials showing TMR as well as PMA higher than FeCo(B) for further advance. One of alternative magnetic materials may be bcc Co since past ab-initio studies predict that bcc Co show large TMR effect in MgO-barrier MTJs and large PMA due to magneto-elastic effect for those strained state. However, bcc Co is thermodynamically unstable; thus, it is aimed to explore metastable bcc Co based alloys with high stability. Here, we propose metastable bcc Co based alloy with adding both Mn and Fe as a candidate. We study in-plane magnetized MTJs utilizing metastable bcc CoMnFe films as electrodes and demonstrate large TMR effect of 350% at 300 K and of 1002% at 5 K. This experimental finding will open a route to advanced bcc Co based magnetic material for MRAM applications.

Néel Spin Currents in Antiferromagnets.

Ferromagnets are known to support spin-polarized currents that control various spin-dependent transport phenomena useful for spintronics. On the contrary, fully compensated antiferromagnets are expected to support only globally spin-neutral currents. Here, we demonstrate that these globally spin-neutral currents can represent the Néel spin currents, i.e., staggered spin currents flowing through different magnetic sublattices. The Néel spin currents emerge in antiferromagnets with strong intrasublattice coupling (hopping) and drive the spin-dependent transport phenomena such as tunneling magnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetic tunnel junctions (AFMTJs). Using RuO_{2} and Fe_{4}GeTe_{2} as representative antiferromagnets, we predict that the Néel spin currents with a strong staggered spin polarization produce a sizable fieldlike STT capable of the deterministic switching of the Néel vector in the associated AFMTJs. Our work uncovers the previously unexplored potential of fully compensated antiferromagnets and paves a new route to realize the efficient writing and reading of information for antiferromagnetic spintronics.

Giant intrinsic magnetoresistance in spin-filtered tunnel junctions with ferrimagnetic electrode

In recent years, magnetic tunnel junctions (MTJs) have attracted strong research interest due to their potential use in nonvolatile memory technologies, such as magnetoresistive random access memory and magnetic logic applications. Half-metallic materials have been proposed as ideal electrode materials for MTJs to achieve large tunnel magnetoresistance (TMR) effects. Here, we design and investigate a spin-filter MTJ (sf-MTJ) consisting of a ferrimagnetic inverse Heusler alloy, ${\mathrm{Mn}}_{2}\mathrm{CoSi}$ as the electrode and CaS as the insulating tunnel barrier using ab initio quantum transport calculations. Our results demonstrate a high zero-bias voltage TMR ratio that initially oscillated before decreasing as the bias voltage increased. Despite the oscillatory TMR under bias voltage, the spin injection remains high and stable, highlighting the potential of sf-MTJs formed by ${\mathrm{Mn}}_{2}\mathrm{CoSi}$ electrodes for practical applications.

Room-temperature magnetoresistance in a single-layer composite film based on noncollinear antiferromagnetic Mn3Sn

The recently discovered room-temperature magnetoresistance in all-antiferromagnetic tunnel junctions is promising for highly integrated ultrafast memory applications. Here, we report a room-temperature magnetoresistance effect in a single-layer composite film consisting of noncollinear antiferromagnetic Mn3Sn and nonmagnetic Ag. A room-temperature butterfly like magnetoresistance of ∼0.3% is obtained for the Mn3Sn–Ag composite film, which is induced by the giant magnetoresistance effect governed by the magnetic octupole induced momentum space spin splitting in the noncollinear antiferromagnet Mn3Sn. Moreover, compared to the complicated multilayer all-antiferromagnetic tunnel junction structures, the simple fabrication process of single-layer composite films in this work could facilitate the application of antiferromagnetic magnetoresistance devices.