Abstract
The recently discovered room-temperature magnetoresistance in all-antiferromagnetic tunnel junctions is promising for highly integrated ultrafast memory applications. Here, we report a room-temperature magnetoresistance effect in a single-layer composite film consisting of noncollinear antiferromagnetic Mn3Sn and nonmagnetic Ag. A room-temperature butterfly like magnetoresistance of ∼0.3% is obtained for the Mn3Sn–Ag composite film, which is induced by the giant magnetoresistance effect governed by the magnetic octupole induced momentum space spin splitting in the noncollinear antiferromagnet Mn3Sn. Moreover, compared to the complicated multilayer all-antiferromagnetic tunnel junction structures, the simple fabrication process of single-layer composite films in this work could facilitate the application of antiferromagnetic magnetoresistance devices.
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