A type of synaptic devices have been constructed by employing the nonlinear magnetoelectric effects in multiferroic materials. The state of the magnetoelectric coefficient of the device can be tuned continuously with a large number of nonvolatile levels by engineering the applied electric-field pulses. Therefore, the magnetoeletric coefficient may be regarded as the synaptic weight, and the subsequent magnetoelectric voltage VME acts as excitatory or inhibitory postsynaptic potentials. Synaptic behaviors including the long-term potentiation, long-term depression, and spiking-time-dependent plasticity have been demonstrated in a multiferroic heterostructure made of Metglas/PMN-PT/Metglas. The consumed energy density is estimated to be ~7.7 mJ cm−3 per spike, comparable to the biological synapse in the brain. Our work presents an alternative way towards artificial synaptic devices with very low energy consumption.
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