Magnetized Semiconductor Plasma Research Articles

Propagation and energy of bright and dark solitons in magnetized quantum semiconductor plasmas in the presence of Bohm potential effect

A theoretical investigation is presented for the bright and dark solitons in GaAs, GaSb, InP, and GaN quantum magnetized semiconductor plasma systems. The plasma system consists of electrons, holes, and ions, all existed in a quantizing magnetic field. The Zakharov–Kuznetsov (ZK) equation is derived by using the reductive perturbation method. The bright and the dark soliton solutions are derived for the ZK equation. The electric field and the soliton energy were also derived. The present results are considered to be beneficial in understanding the waves propagating in quantum semiconductor plasmas on an ultrafast time scale in semiconductors nanostructures that are applicable for quantum computing.

High Gain Coefficient Parametric Amplification of Optical Phonon Mode in Magnetized AIIIBV Semiconductor Plasmas

Using the hydrodynamic (fluid) model of plasmas, we have studied the threshold and gain characteristics of parametric amplification of optical phonon mode in magnetized AIIIBV semiconductor plasmas. The origin of nonlinear interaction is assumed to lie in second-order nonlinearity arising due to nonlinear coupling of pump wave, optical phonon and signal modes in the medium. Theoretical formulation has been carried out with the help of coupled mode theory under rotating-wave approximation. Numerical estimates have been made for a representative magnetized doped AIIIBV semiconductor crystal (viz. n-InSb) irradiated by a pulsed 10.6 μm CO2 laser. The analysis enables us to choose one of the three achievable resonance conditions: (electron–cyclotron frequency ~ pump frequency, coupled cyclotron– plasmon frequency ~ Stokes frequency, coupled cyclotron–plasmon frequency ~ optical phonon frequency), at which threshold pump amplitude reduces, whereas parametric gain coefficient enhances nearly hundred times. The lowering of threshold and enhancement of parametric gain coefficient, in AIIIBV semiconductors under proper selection of doping concentration and externally applied magnetic field, confirm the chosen nonlinear medium as a potential candidate material for fabrication of optical parametric amplifier with enhanced gain coefficient.

Dispersion relation properties of quantum electron–hole semiconductor plasmas in the presence of an external magnetic field

In this paper, a derivation of the general dielectric tensor and the dispersion equation in a magnetized semiconductor plasma containing electrons and holes is carried out by employing the quantum hydrodynamic model, under non-relativistic and degenerate charged species assumptions. Dispersion curves are shown for different types of semiconductors. The effects of an external magnetic field and quantum terms, including electrons’ and holes’ quantum recoil effects, exchange-correlation potentials, and the degenerate pressures of species on dispersion relations are considered. When the angle of the wave vector with respect to the z axis is zero (), two well-separated Langmuir and acoustic modes are depicted and when , three branches are revealed. The growth rate of streaming instability is numerically presented for GaN. This study would be beneficial to understand the linear phenomena and instability behaviors of a magnetized quantum electron–hole semiconductor plasma.

Parametric excitation of optical phonons in weakly polar narrow band gap magnetized semiconductor plasmas

An analytical treatment based on the hydrodynamic model of plasmas is developed to study parametric amplification and oscillation of optical phonon modes in weakly polar narrow direct-gap magnetized semiconductor plasmas. Second-order optical susceptibility arising due to nonlinear polarization and the basic operational characteristics of the parametric device, viz. threshold nature, power gain mechanisms and conversion efficiency, are obtained. The effects of doping, magnetic field and excitation intensity, on the above operational characteristics have been studied in detail. Numerical estimates are made for an n-InSb crystal at 5 K duly irradiated by a pulsed 10.6 [Formula: see text] CO2 laser. The analysis suggests the possibility of observing super-fluorescent parametric emission and oscillation in moderately doped n-InSb crystal under off-resonant nanosecond pulsed not-too-high power laser irradiation, the crystal being immersed in a large magnetic field.

On aspects of electron-LO phonon interaction in magnetized semiconductors in the presence of a hybrid pump field

Most realistic propagation of an intense hybrid pump wave in a magnetized semiconductor plasma has been considered to study some aspects of electron-LO phonon interactions. Hydrodynamic model for one component plasma along with coupled mode theory has been used to study parametric amplification due to polaron mode. Expressions for parametric gain coefficient arising due to parametric instability and threshold field required to incite parametric amplification has been derived. The compound semiconductors of group III-V and II-VI are unique within the universe of simple octet compounds, enable them to dominate higher performance electronics and optoelectronics. Present study aims to compare materials for which favourable magnitudes of parametric gain and threshold value could be obtained with suitable values of external parameters. Numerical estimations were carried out using the data of two different group compound semiconductors namely ZnSe and GaAs. Both the gain coefficients and threshold pump field are found to be strongly dependent on the carrier concentration of the medium. Resonance between plasma frequency and collective excitation frequency affects the process of amplification in both cases. Higher gain is achieved for GaAs which has smaller coupling coefficient as compared to ZnSe. Hybrid pump propagation is found to strengthen the electron-LO phonon coupling.

Amplitude modulation and demodulation of an electromagnetic wave in magnetized ion-implanted semiconductor plasmas having SDDC

In communication processes, amplitude modulation is very helpful to save power using a single band transmission. Using the hydrodynamical description of semiconductor plasma analytical investigations are made for the amplitude modulation as well as demodulation of an electromagnetic wave in magnetized ion implanted semiconductor plasmas having strain dependent dielectric constants. Analysis is made under different wave number regimes over a wide range of cyclotron frequencies without and with colloids. Numerical estimations are made for n-doped BaTiO3 crystal irradiated by pump wave frequency 1.78 × 1013s−1. It has been found that ion implantation of negatively charged colloids modifies nearly ≈ 105 of magnitude of amplitude modulation and demodulation processes. Ion implantation plays a key role in development of optoelectronics.

Electron-Phonon coupling in magnetized semiconductor quantum plasmas

Present paper deals with electron-phonon coupling in piezoelectric n-type magnetized semiconductor plasma under quantum regime. A quantum modified dispersion relation is derived for the evolution of desired electron-phonon coupling in semiconductor plasma using quantum hydrodynamic (QHD) model. The main ingredients of this study are the role of non-dimensional quantum parameter-H and externally applied magneto-static field. The presence of quantum parameter-H includes the contributions of Fermi degenerate pressure and quantum diffraction. It represents the ratio of plasmon energy to Fermi energy of the system, hence is a function of doping concentration n0. An expression for gain coefficient of acoustic wave is obtained in terms of quantum parameter-H and magnetic field under the collision dominated limit. We present the effects of doping in medium and orientation of magnetic field on gain profile of acoustic wave. The results show that the presence of magnetic field and quantum effects through quantum parameter-H effectively modifies the gain per unit length of acoustic wave.

Amplitude modulation and demodulation of an electromagnetic wave in magnetised acousto-optic diffusive semiconductor plasmas: Hot carrier effects

In communication processes, amplitude modulation is very helpful to save power using a single band transmission. Using the hydrodynamical model of semiconductor plasma analytical investigations are made for the amplitude modulation as well as demodulation of an electromagnetic wave incorporating carrier heating (CH) effects in acousto-optic magnetised semiconductor plasma. The CH effects add new dimensions in the present analysis. Analysis are made under different wave number regions over a wide range of cyclotron frequencies. It is found that incorporation of CH effects modifies the amplitude modulation and demodulation processes effectively. Numerical estimations are made for III–V semiconductor crystal irradiated by pump wave of frequency 1.6×10 13 s −1. Complete absorption of the waves takes place in all the possible wavelength regimes when the cyclotron frequency ω c becomes nearly equal to ω 0, the pump frequency on neglecting the collision term in modulation/ demodulation indices.

Parametric oscillations of polaron modes in magnetized semiconductor plasmas

A simple analytical treatment based on the hydrodynamic model of plasmas is developed to study parametric oscillations of polaron modes in magnetized semiconductor plasmas. Second-order optical susceptibility arising due to nonlinear polarization and necessary threshold pump intensity are estimated using the data of an n-InSb crystal assumed to be irradiated by a frequency doubled 10.6 μm CO2 laser. The effect of transverse magnetostatic field on the threshold intensity of the single resonant parametric oscillator has been critically examined. The effects of some important parameters such as the cavity physical length, signal reflectance, conversion efficiency and single pass signal power gain on the threshold intensity are analyzed in detail.

Stimulated Brillouin scattering in magnetized diffusive semiconductor plasmas

Using the hydrodynamical model and following the coupled mode approach, detailed analytical investigation of stimulated Brillouin scattering is performed in an electrostrictive semiconductor. The total induced current density including diffusion current density and the effective Brillouin susceptibility are obtained under off-resonant laser irradiation. The analysis deals with the qualitative behaviour of the Brillouin gain and transmitted intensity with respect to excess doping concentration and magnetic field. Efforts are directed towards optimizing the doping level and magnetic field to achieve maximum Brillouin gain at pump intensities far below the optical damage threshold level. It is found that by immersing a moderately doped semiconductor in a sufficiently strong magnetic field in transverse direction, one can achieve resonant enhancement of Brillouin gain provided the generated acoustic mode lies in the dispersionless regime.

Instability of circularly polarized electro-kinetic waves in magnetized ion-implanted semiconductor plasmas

Based on the hydrodynamical model of plasmas, an analytical investigation of a transverse electro-kinetic wave and the novel properties introduced due to the presence of negatively charged colloidal particles in a compensated, magnetized group III-V semiconductor plasma is presented. We derive a compact linear dispersion relation for left-hand circularly polarized electro-kinetic waves in an ion-implanted semiconductor plasma by using multi-fluid analysis and Maxwell's equations. This dispersion relation is used to study numerically wave phenomena and the resultant instability of the left-hand circularly polarized mode. It is found that the presence of charged colloids significantly modify the dispersion and absorption characteristics of possible modes even though colloidal particles on account of their heavy masses do not participate in wave propagation. One out of the two modes is always found to be spatially growing with the growth rate increasing with the electric field.

Parametric amplification in magnetized diffusive semiconductor plasmas

Assuming that the origin of the nonlinear interaction lies in the second-order optical susceptibility χ (2) arising from the diffusion-induced nonlinear current density, and using straight-forward coupled mode theory, the parametric amplification is analytically investigated in a magnetized diffusive semiconductor plasma. The threshold value of the pump electric field E 0th is obtained which is found to decrease with rising magnetic field. We found minimum value of E 0th at wave number k=7.45×10 7 m −1 (say k m ). This k m is greatly influenced by carrier concentration and diffusion coefficient of the medium. The parametric gain constant is also obtained. It is found that gain maximizes at very low magnetic field (∼6 kG), which may drastically reduce the fabrication cost of parametric amplifier based on this interaction.

Stimulated Brillouin scattering of electromagnetic waves in magnetized semiconductor plasmas.

The phenomenon of stimulated Brillouin scattering of a large-amplitude electromagnetic wave by the electron acoustic wave has been analytically investigated in a piezoelectric semiconductor plasma in the presence of an external uniform magnetic field. The Boltzmann equation with a Krook model for the collisional term has been solved in the guiding center coordinates for the nonlinear response of the plasma electrons. It is noticed that the magnetic field enhances the growth rate of the parametric instability in contrast with the fluid-model results.

Radiation characteristics of dipole antenna in a grounded composite magnetized semiconductor plasma

The radiation characteristics of dipole antenna in a grounded nonreciprocal semiconductor plasma are examined using the spectral domain-exponential matrix technique, and such solid plasma is taken as GaAs material. The effects of constitutive and geometrical parameters of the semiconductor plasma on the radiation patterns are demonstrated in detail, and the results show that the far-field behaviour of dipole antenna can be changed by adjusting both the operating frequency and the applied magnetic field, et al.

Propagation of Transverse Electromagnetic Wave Through Magnetized Plasma Slab

The expression for the dispersion relation, Adds and attenuation constant for a magnetized semiconductor plasma slab have been derived. Numerical calculations show that carrier density collision frequency and hall angle significantly affect the attenuation constant.

Electromagnetic Waves in Waveguide Partially Filled with Semiconductor Plasma

AbstractThe dispersion of electromagnetic waves in waveguides partially filled with semiconductor plasma is investigated for unmagnetized and for strongly magnetized plasma.The effects which may be useful for the plasma electronics are found: In such waveguides there exist a large number of slow waves with typical frequencies ω ≈ ωP/√ϵL. The filling at which the different modes at fixed phase velocity are maximum separated in wavelength is found. The thickness of the semiconductor layer at which this effect arises is about hundred micrometers and depends on the crystals' type. In addition to this, in strongly magnetized semiconductor plasma the maximum frequency separation of the typical plasma waves is found at fixed filling.Is it shown that in such systems there exist many surface waves which are of the slow wave type.In the case of strongly magnetized plasma coupling between nonsymmetrical EH‐ and HE‐ modes is shown to exist.

Parametric Excitation of Electron‐Acoustic Waves by Helicon Waves in Magnetised Semiconductor‐Plasma

physica status solidi (b)Volume 127, Issue 2 p. K137-K142 Short Note Parametric Excitation of Electron-Acoustic Waves by Helicon Waves in Magnetised Semiconductor-Plasma S. Guha, S. Guha Department of Physics, Ravishankar University, Raipur Search for more papers by this authorC. Basu, C. Basu Department of Physics, Ravishankar University, Raipur Search for more papers by this author S. Guha, S. Guha Department of Physics, Ravishankar University, Raipur Search for more papers by this authorC. Basu, C. Basu Department of Physics, Ravishankar University, Raipur Search for more papers by this author First published: 1 February 1985 https://doi.org/10.1002/pssb.2221270246Citations: 1 Raipur 492010 (M.P), India. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Citing Literature Volume127, Issue21 February 1985Pages K137-K142 RelatedInformation

Resonance phenomena in the magnetized semiconductor plasma and their application for the design of the millimeter and submillimeter wave components

A review of physical principles of design as well as some ways of technical realization of controlled resonance semiconductor devices at millimeter and submillimeter wavelengths is presented. The operation of such devices is based on cyclotron and magnetoplasma resonances as well as on Fabry-Perot resonance. Such choice has been made due to the fact that these resonance phenomena are the most typical ones for the magnetized semiconductor plasma.

Excitation of the hybrid mode due to modulation of an intense laser beam in a transversely magnetised semiconductor plasma

AbstractUsing the hydrodynamic model of a homogeneous plasma, the modulational decay of a laser beam into an acoustic wave and another electromagnetic wave is studied in heavily doped n‐type semiconductors in the presence of a transverse magnetic field. The decay process results in the excitation of the hybrid mode. The growth rate and the threshold electric field necessary for the onset of instability is obtained in presence as well as in absence of the magnetic field. The magnetic field couples the acoustic wave and the electromagnetic waves. The growth rate of the unstable hybrid mode increases with the square of the amplitude of the magnetic field.

On the theory of electromagnetic surface waves in magnetized semiconductor plasma

The paper demonstrates existence of electromagnetic surface waves at the boundary separating a magnetized semiconductor plasma and a dielectric or metal. The external magnetic field is along the interface. As has been shown, slow surface waves of the helicon or Alfven type can exist only with their propagation vector directed obliquely with respect to the magnetic field. The ω- k relations have been found and ranges of existence established both in the frequency domain and that of angles between the propagation vector and the magnetic field.