Magnetic Junctions Research Articles

Spin polarization and transport of hybrid interface states in π-stacked magnetic molecular junctions

Based on the first-principles method, the spin polarization and transport properties of the hybrid interface states (HIS) in π-stacked three-layer triphenylene molecular junction are studied theoretically. By rotating the torsion angle between two neighbor layers, the π-π interaction strength is adjusted. The results demonstrate that the HIS, generated by strong pz-d hybridization between molecules and ferromagnetic electrodes, can easily transfer to the central layer via a strong π-π interaction with similar spin polarization. A weak π-π interaction will block the transfer of the HIS, where the discrete molecular orbital states dominate the central molecule. However, an enhancement of the spin polarization for the molecular frontier orbital states is observed. The transport calculation shows that efficient transport of the HIS is realized in the π-stacked system, where the largest current appears at a strong π-π interaction but a significant current spin polarization appears at a weak π-π interaction. This work deepens our understanding of the role of the HIS in π-stacked organic systems.

Magnonic φ Josephson junctions and synchronized precession

There has been a growing interest in non-Hermitian physics. One of its main goals is to engineer dissipation and to explore ensuing functionality. In magnonics, the effect of dissipation due to local damping on magnon transport has been explored. However, the effects of nonlocal damping on the magnonic analog of the Josephson effect remain missing, despite that nonlocal damping is inevitable and has been playing a central role in magnonics. Here, we uncover theoretically that a surprisingly rich dynamics can emerge in magnetic junctions due to intrinsic nonlocal damping, using analytical and numerical methods. In particular, under microwave pumping, we show that coherent spin precession in the right and left insulating ferromagnet (FM) of the junction becomes synchronized by nonlocal damping and thereby a magnonic analog of the φ Josephson junction emerges, where φ stands here for the relative precession phase of right and left FM in the stationary limit. Remarkably, φ decreases monotonically from π to π/2 as the magnon-magnon interaction, arising from spin anisotropies, increases. Moreover, we also find a magnonic diode effect giving rise to rectification of magnon currents. Our predictions are readily testable with current device and measurement technologies at room temperatures. Published by the American Physical Society 2024

Evidence of the inverse proximity effect in tunnel magnetic josephson junctions

Magnetic Josephson junctions (MJJs) are a special class of hybrid systems where antagonistic correlations coexist, thus providing a key for advances in weak superconductivity, superconducting spintronics, and quantum computation. So far, the memory properties of MJJs have been mostly investigated in view of digital electronics and for spintronic devices at liquid-helium temperature. At the operating temperature of quantum circuits, a magnetic order can rise in a superconductor (S) at the S/ferromagnet (F) interface, i.e., the inverse proximity effect (IPE), thus leading to a significant modification of the magnetic field patterns in MJJs. In this work, we have carried out a comparative investigation of the magnetic behavior of tunnel MJJs with a strong ferromagnetic layer inserted in the layout of both Nb and Al JJs, respectively. The comparative analysis validates the crucial role of the temperature, the fundamental scaling energies of S/F coupling systems, and the transparency of the S/F interface. This investigation points out that the IPE is a key aspect to consider when designing tunnel MJJs operating well below 4 K and thus in the perspective of hybrid superconducting quantum architectures.

Manipulation of Cooper-Pair Tunneling via Domain Structure in a van der Waals Ferromagnetic Josephson Junction.

Ferromagnetic Josephson junctions play a key role in understanding the interplay between superconductivity and ferromagnetism in condensed matter physics. The magnetic domain structures of the ferromagnet in such junctions can significantly affect the tunneling of the superconducting Cooper pairs due to the strong interactions between Cooper pairs and local magnetic moments in the ferromagnetic tunnel barrier. However, the underlying microscopic mechanism of relevant quasiparticle tunneling processes with magnetic domain structures remains largely unexplored. Here, the manipulation of Cooper-pair tunneling in the NbSe2/Cr2Ge2Te6/NbSe2 ferromagnetic Josephson junction is demonstrated by using a multidomain ferromagnetic barrier with anisotropic magnetic moments. The evolution of up-, down-magnetized domain and Bloch domain structures in Cr2Ge2Te6 barrier under external magnetic fields leads to the enhancement of the critical tunneling supercurrent and an unconventional dual-peak feature with two local maxima in the field-dependent critical current curve. The phenomenon of magnetic-field-modulated critical tunneling supercurrent can be well explained by the competition between the coherence length of tunneling Cooper pairs and the size of magnetic domain walls in Cr2Ge2Te6 barrier. This kind of ferromagnetic Josephson junction provides an intriguing material system for manipulating Cooper-pair tunneling by tuning the local magnetic moments within magnetic Josephson junction devices.

Magnetically tunable supercurrent in dilute magnetic topological insulator-based Josephson junctions

A superconductor, when exposed to a spin-exchange field, can exhibit spatial modulation of its order parameter, commonly referred to as the Fulde–Ferrell–Larkin–Ovchinnikov state. Such a state can be induced by controlling the spin-splitting field in Josephson junction devices, allowing access to a wide range of the phase diagram. Here we demonstrate that a Fulde–Ferrell–Larkin–Ovchinnikov state can be induced in Josephson junctions based on the two-dimensional dilute magnetic topological insulator (Hg,Mn)Te. We do this by observing the dependence of the critical current on the magnetic field and temperature. The substitution of Mn dopants induces an enhanced Zeeman effect, which can be controlled with high precision by using a small external magnetic field. We observe multiple re-entrant behaviours of the critical current as a response to an in-plane magnetic field, which we assign to transitions between ground states with a phase shifted by π. This will enable the study of the Fulde–Ferrell–Larkin–Ovchinnikov state in much more accessible experimental conditions.

Magnetization reversal via domain wall motion in vertical high-aspect-ratio nanopillar with two magnetic junctions

A vertical ferromagnetic (FM) nanopillar can be used as magnetic memory owing to characteristics such as its high storage capacity and high thermal stability. The perpendicular shape anisotropy (PSA) of the pillar enables its magnetization direction to be stabilized. A pillar with a high aspect ratio exhibits both strong PSA and magnetization with high thermal stability. Reversing the magnetization direction of such a pillar using the current flowing through it is a significant challenge in spintronics. However, spin injection from another FM layer alone cannot reverse the magnetization of pillars of which the length exceeds 100 nm. This motivated us to propose a magnetic junction (MJ) consisting of a high-aspect-ratio FM nanopillar with two thin FM layers. Using micromagnetic simulation, we demonstrate the magnetization reversal of a 150 nm-long pillar with a diameter of 15 nm. The simulation revealed that the magnetization of the pillar reverses because of the spin transfer torque induced by the spin injection from the two thin FM layers and the spin-polarized current (SPC) flowing in the pillar in the longitudinal direction. During the magnetization reversal process, a domain wall (DW) first forms at one end of the pillar due to the spin injection. Then, driven by the SPC, the DW moves to the other end of the pillar, and the magnetization is reversed. The magnetization direction of the pillar, controlled by changing the direction of the current flowing through the pillar, can be evaluated from the respective magnetoresistance values of the two MJs. Alternatively, by pinning the DW in the pillar, a three-value magnetic memory can be developed. In addition, multi-bit and analog memories can be developed by controlling the pinning position of the DW. The high-aspect-ratio pillar-writing scheme is foreseen to pave the way for the practical development of next-generation spintronic devices.

Anisotropic spin transport and photoresponse characteristics detected by tip movement in magnetic single-molecule junction

Orientation-dependent transport properties induced by anisotropic molecules are enticing in single-molecule junctions. Here, using the first-principles method, we theoretically investigate spin transport properties and photoresponse characteristics in trimesic acid magnetic single-molecule junctions with different molecular adsorption orientations and electrode contact sites. The transport calculations indicate that a single-molecule switch and a significant enhancement of spin transport and photoresponse can be achieved when the molecular adsorption orientation changes from planar geometry to upright geometry. The maximum spin polarization of current and photocurrent in upright molecular junctions exceeds 90%. Moreover, as the Ni tip electrode moves, the tunneling magnetoresistance of upright molecular junctions can be increased to 70%. The analysis of the spin-dependent PDOS elucidates that the spinterfaces between organic molecule and ferromagnetic electrodes are modulated by molecular adsorption orientation, where the molecule in upright molecular junctions yields higher spin polarization. Our theoretical work paves the way for designing spintronic devices and optoelectronic devices with anisotropic functionality base on anisotropic molecules.

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve.

The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Dynamics of spin relaxation in nonequilibrium magnetic nanojunctions

We investigate nonequilibrium phenomena in magnetic nano-junctions using a numerical approach that combines classical spin dynamics with the hierarchical equations of motion technique for quantum dynamics of conduction electrons. Our focus lies on the spin dynamics, where we observe non-monotonic behavior in the spin relaxation rates as a function of the coupling strength between the localized spin and conduction electrons. Notably, we identify a distinct maximum at intermediate coupling strength, which we attribute to a competition that involves the increasing influence of the coupling between the classical spin and electrons, as well as the influence of decreasing local density of states at the Fermi level. Furthermore, we demonstrate that the spin dynamics of a large open system can be accurately simulated by a short chain coupled to semi-infinite metallic leads. In the case of a magnetic junction subjected to an external DC voltage, we observe resonant features in the spin relaxation, reflecting the electronic spectrum of the system. The precession of classical spin gives rise to additional side energies in the electronic spectrum, which in turn leads to a broadened range of enhanced damping in the voltage.

Atypical Raman Scattering on Magnetic Junctions in Metallic Nanowires

Atypical Raman Scattering on Magnetic Junctions in Metallic Nanowires

Nano-crystal domains in Co-based fcc(111) epitaxial magnetic junctions and their impact on tunnel magnetoresistance

Nano-crystal domain structures formed in a MgO barrier and their effects on tunnel magnetoresistance (TMR) in epitaxial fcc-Co90Fe10 (CoFe)(111)/MgO(111)/CoFe(111) magnetic tunnel junctions (MTJs) have been systematically studied using scanning transmission electron microscopy and first-principles calculations. These domains are widely distributed in the (111)-textured MgO layer, being different from conventional bcc-CoFe/MgO(001)-based MTJs. The (111)-texture is formed by extension of {111} planes through several adjacent MgO domains. Three types of orientation relationships (ORs) between CoFe and MgO are identified, including cube-on-cube type (Type-1), twin-like type (Type-2), and unexpected type (Type-3). Crystallographic analysis indicated that Type-2 OR is a variant of Type-1 OR, triggered by different stacking orders of MgO(111) planes, while Type-3 OR is formed by a 30° in-plane rotation of MgO lattice relative to Type-1 OR. Due to the large in-plane lattice mismatch (19.6%) between Co(111) and MgO(111) in Type-1 and Type-2 ORs, Type-3 OR (mismatch 3.4%) can be stabilized. First-principles calculations uncovered that the theoretical TMR ratio of the MgO(111) MTJ with Type-3 OR is ∼2 orders of magnitude smaller than that with Type-1 and Type-2 ORs. The small contribution of Type-3 OR to the transport reasonably interprets why the experimental TMR ratio (∼37%) is much lower than the theoretical value (∼2100%) in the Co/MgO/Co(111) MTJ. This study has revealed the nano-crystal domain formation unique to the fcc-CoFe/MgO(111) MTJs, indicating that controlling the nano-crystal domains (e.g., lattice optimization by atomic doping) can be a guiding principle to develop MgO(111)-based epitaxial MTJs and related heterostructure devices.

Microwave Switch Architecture for Superconducting Integrated Circuits Using Magnetic Field-Tunable Josephson Junctions

We report on the design, fabrication, and measurement of a low-temperature microwave switch architecture that can be fully integrated on chip using single Josephson junctions and superconducting bias lines. The basic switching element used is a reflective single-pole-single-throw switch that is realized by tuning the critical current of a single Josephson junction by way of a local flux bias. A single-pole-single-throw switch is demonstrated at 4.2 K to have an on/off ratio in excess of 20 dB up to 12 GHz. This element is then incorporated into the design of a single-pole-double-throw switch that exhibits an on/off ratio above 20 dB up to 10 GHz. The switches require no intrinsic power dissipation in either state, and their performance was verified for input powers of -100 dBm to -60 dBm. S-parameter simulations using a simple lumped element model are in good agreement with the experimental data, allowing for the design to be extended to larger switch architectures.

Generation of spin polarization in a multibarrier structure

The possibility to induce polarized transmission is investigated in a system of multibarrier magnetic junction. In the undeformed system, the transmission is shown to depend on the incident energy but almost independent of inhomogeneity of potential barrier. A proper selection of incident energy is found sufficient to control both direction and strength of spin polarization. When deformation of momentum wave-vector is introduced, the spin polarization does not only change its dependence on energy but also its intensity. This provides evidence that besides energy, deformation of momentum wave vector could also influence and be used to drive spin of the transmitted current; gaining further control on both direction and intensity. A short survey on the role of local magnetic splitting, ordering of local magnetic field on the spin polarization is also given.

Optimization of Half-Flux-Quantum Circuits Composed of π-Shift and Conventional Josephson Junctions

We report optimization of half-flux-quantum (HFQ) circuits composed of SQUIDs containing conventional Josephson junctions and π-shift magnetic Josephson junctions. The SQUID can act as a Josephson junction with an extremely small critical current and be easily switched by a weak driving force with the assistance of the circulating current that is induced due to the π-shift and quantization conditions. It leads to a drastic reduction of both static and dynamic power consumption. However, the parameter margins of the HFQ circuits obtained so far is narrow compared with conventional single-flux-quantum circuits. Since HFQ circuits use many circuit elements and require the two junctions in the SQUID to switch alternately and symmetrically, circuit parameter optimization is much more difficult. In this study, we developed an optimization tool for HFQ circuits, including operation judgment and margin calculation. We improved the critical margin of the HFQ Josephson transmission line to 39%. We also optimized the HFQ splitter, confluence buffer, and D flip-flop. We discuss design guidelines for HFQ circuits based on our systematic exploration of the optimized circuit parameter sets. We suggest that the optimized loop inductances are around 0.5 and 1.5 of Φ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> /2 for data transmission and storage, respectively.

Conductance asymmetry in proximitized magnetic topological insulator junctions with Majorana modes

Conductance asymmetry in proximitized magnetic topological insulator junctions with Majorana modes

Optimization of the tunneling magnetoresistance and spin-valley polarization in complex magnetic silicene structures

Aperiodic order is ubiquitous in nature and quite relevant in science and technology. There are extensive works in aperiodic structures studying fundamental characteristics in physical properties, such as fractality, self-similarity, and fragmentation. However, there are fewer reports in which aperiodicity signifies an improvement in physical quantities with practical applications. Here, we show that the aperiodicity of fractal or self-similar type optimizes the tunneling magnetoresistance and spin-valley polarization of magnetic silicene structures, raising the prospects of spin-valleytronics. We reach this conclusion by studying the spin-valley-dependent transport properties of complex (Cantor-like) magnetic silicene structures within the lines of the transfer matrix method and the Landauer–Büttiker formalism. We find that the self-similar arrangement of magnetic barriers in conjunction with structural asymmetry reduces the conductance oscillations typical of periodic magnetic silicene superlattices and more importantly makes the K′-spin-down conductance component dominant, resulting in nearly perfect positive and negative spin-valley polarization states accessible by simply reversing the magnetization direction. The tunneling magnetoresistance is not as prominent as in periodic magnetic silicene superlattices; however, it is better than in single magnetic junctions. Furthermore, the optimization of the spin-valley-dependent transport properties caused by the complex structure is superior than the corresponding one reported in typical aperiodic structures, such as Fibonacci and Thue–Morse magnetic silicene superlattices.

First-Principles Studies on Spin-Dependent Transport of Magnetic Junctions with Half-Metallic Heusler Compounds

Two types of magnetoresistance (MR), i.e., tunnel magnetoresistance (TMR) and current perpendicular to plane giant magnetoresistance (CPP-GMR), are theoretically discussed for systems with half-metallic (HFM) Co-based full Heusler compounds. In TMR, the non-collinear spin structure at the Co2MnSi(CMS)/MgO(001) interface that results from thermal spin fluctuations significantly reduced the TMR ratio at room temperature (RT). Enhancement of the exchange stiffness of CMS/MgO was essential to suppress the reduction in TMR at RT. Furthermore, it is proposed that inserting of a B2-CoFe layer between CMS and MgO is a promising way to enhance the interface exchange stiffness constant. In CPP-GMR, the interface spin asymmetry γ in the Valet-Fert model was essential to enhance GMR at RT, because the temperature dependence of γ in experiments was much larger than that of the bulk spin asymmetry β. I showed that the experimental CPP-GMR ratio increases with the decrease in the theoretical resistance-area product RPA, which is roughly consistent with the RP dependence of γ. This means that matching of the conductive channel between HMF and a non-magnetic metallic spacer is a key parameter to enhance γ. These findings will be very important for room temperature spintronics devices applied in future artificial intelligence hardware.

Carbon‐based organic radical spin filters

AbstractSingle‐molecule magnetic junctions serve as an important component for the manipulation of spin‐polarized currents by chemical modifications and control of magnetic interactions in spintronic devices. We employed the nonequilibrium green function and spin‐polarized density functional theory simulations to investigate the performance of molecular junctions bearing an organic radical as spin filters. A spin‐polarized current could be generated using the junctions and, moreover, the spin‐filtering efficiency could be tuned by varying the number of magnetic units. Spin orbital and density of states analyses revealed the relationship effect of the shapes and energy levels of the dominant electron‐conducting channels in the spin‐filtering efficiency. Thus, the use of a tunable organic magnetic molecular junction system is an appealing approach for regulating spin‐polarized currents in spintronic devices.

Perfect control of spin, valley and spin-valley-coupled currents in bilayer graphene on WSe2 magnetic junction: Effect of spin-valley dependent Fermi level and energy gap

We investigate the spin-valley dependent transport properties in a gated bilayer graphene (BG) junction placed on top of WSe2. By means of layer-dependent proximity, the spin–orbit interaction (SOI) is induced in the bottom layer, while the top layer is induced into ferromagnetism by a magnetic insulator. As a result of these differing properties, the Fermi level and energy gap become spin-valley dependent, which could lead to controllable spin- and valley-dependent filtering in the BG system. Our findings predict perfect spin-valley polarization control through gate control, given specific energy and electric field conditions, as well as spin-valley-coupled and spin currents when both the electric-field-induced energy gap and the exchange energy are equal to the SOI strength. We predict that there will be very highly sensitive gate control of −100% to + 100% of spin-valley-coupled polarization for large barrier thickness. Additionally, we predict 100% valley polarization can be controlled by the gate when the exchange energy is equal to the SOI. Furthermore, we found that the performance of the junction to control the polarizations can be enhanced by increasing the thickness of the junction. This work reveals the potential of the BG/WSe2 hybrid structure for spin-valley-current-based electronics, such as spin-, valley-, and spin-valley field-effect transistors.

Spin-Topological Electronic Valve in Ni/hBN–Graphene–hBN/Ni Magnetic Junction

A spin-topological electronic valve was discovered in a Ni/hBN–graphene–hBN/Ni magnetic junction to control the in-plane conductance of graphene. By manipulating the mass-gapped Dirac cone (MGDC) of graphene’s topology using the magnetic proximity effect, the spin-topological electronic valve was made possible. The first-principles investigation was conducted to show how the mechanism of graphene’s MGDC is controlled. Twelve stacking configurations for the anti-parallel configuration (APC) and parallel configuration (PC) of the magnetic alignment of Ni slabs were calculated using spin-polarized density functional theory. Three groups can be made based on the relative total energy of the 12 stacking configurations, which corresponds to a van der Waals interaction between hBN and graphene. Each group exhibits distinctive features of graphene’s MGDC. The configuration of the Ni(111) surface state’s interaction with graphene as an evanescent wave significantly impacts how the MGDC behaves. By utilizing the special properties of graphene’s MGDC, which depend on the stacking configuration, a controllable MGDC using mechanical motion was proposed by suggesting a device that can translate the top and bottom Ni(111)/hBN slabs. By changing the stacking configuration from Group I to II and II to III, three different in-plane conductances of graphene were observed, corresponding to three non-volatile memory states. This device provides insight into MJs having three or more non-volatile memory states that cannot be found in conventional MJs.