Magnetic Insulator Research Articles

Electrically Induced Angular Momentum Flow between Separated Ferromagnets.

Converting angular momentum between different degrees of freedom within a magnetic material results from a dynamic interplay between electrons, magnons, and phonons. This interplay is pivotal to implementing spintronic device concepts that rely on spin angular momentum transport. We establish a new concept for long-range angular momentum transport that further allows us to address and isolate the magnonic contribution to angular momentum transport in a nanostructured metallic ferromagnet. To this end, we electrically excite and detect spin transport between two parallel and electrically insulated ferromagnetic metal strips on top of a diamagnetic substrate. Charge-to-spin current conversion within the ferromagnetic strip generates electronic spin angular momentum that is transferred to magnons via electron-magnon coupling. We observe a finite angular momentum flow to the second ferromagnetic strip across a diamagnetic substrate over micron distances, which is electrically detected in the second strip by the inverse charge-to-spin current conversion process. We discuss phononic and dipolar interactions as the likely cause to transfer angular momentum between the two strips. Moreover, our Letter provides the experimental basis to separate the electronic and magnonic spin transport and thereby paves the way towards magnonic device concepts that do not rely on magnetic insulators.

Magnetic Dirac semimetal state of (Mn,Ge)Bi2Te4

The ability to finely tune the properties of magnetic topological insulators (TIs) is crucial for quantum electronics. We studied solid solutions with a general formula GexMn1-xBi2Te4 between two isostructural Z2 TIs, magnetic MnBi2Te4 and nonmagnetic GeBi2Te4 with Z2 invariants of 1;000 and 1;001, respectively. We observed linear x-dependent magnetic properties, composition-independent pairwise exchange interactions, and topological phase transitions (TPTs) between topologically nontrivial phases and the semimetal state. The TPTs are driven purely by the variation of orbital contributions. By tracing the x-dependent Bi 6p contribution to the states near the fundamental gap, the effective spin-orbit coupling variation is extracted. The gapless state observed at x = 0.42 closely resembles a Dirac semimetal above the Néel temperature and shows a magnetic gap below, which is clearly visible in raw photoemission data. The observed behavior demonstrates an ability to precisely control topological and magnetic properties of TIs.

Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers.

The plateau phase transition in quantum anomalous Hall (QAH) insulators corresponds to a quantum state wherein a single magnetic domain gives way to multiple domains and then reconverges back to a single magnetic domain. The layer structure of the sample provides an external knob for adjusting the Chern number C of the QAH insulators. Here, we employ molecular beam epitaxy to grow magnetic topological insulator multilayers and realize the magnetic field-driven plateau phase transition between two QAH states with odd Chern number change ΔC. We find that critical exponents extracted for the plateau phase transitions with ΔC = 1 and ΔC = 3 in QAH insulators are nearly identical. We construct a four-layer Chalker-Coddington network model to understand the consistent critical exponents for the plateau phase transitions with ΔC = 1 and ΔC = 3. This work will motivate further investigations into the critical behaviors of plateau phase transitions with different ΔC in QAH insulators.

Tailoring the quantum anomalous layer Hall effect in multiferroic bilayers through sliding

Layer Hall effect (LHE), initially discovered in the magnetic topological insulator MnBi2Te4 film, expands the Hall effect family and opens a promising avenue for layertronics applications. In this study, we present an innovative ferroelectric bilayer model to attain a tunable quantum anomalous layer Hall effect (QALHE). This model comprises two ferromagnetic orbital-active Dirac monolayers stacked antiferromagnetically, accompanied by out-of-plane electric polarization. The interplay between the layer-locked Berry curvature monopoles and the intrinsic out-of-plane electric polarization leads to layer-polarized near-quantized anomalous Hall conductance. Using first-principles calculations, we have identified a promising material for this model, namely FeS bilayer. Our calculations demonstrate that the intrinsic out-of-plane electric polarization in the Bernal-stacked FeS bilayer can induce QALHE by regulating the layer-locked Berry curvature of FeS monolayers. Importantly, the intrinsic electric field can be reversed through interlayer sliding. The discovery of ferroelectrically modulated QALHE paves the way for the integrability and non-volatility of layertronics, offering exciting prospects for future applications.

Magnetic and electrical transport study of the intrinsic magnetic topological insulator MnBi2Te4 with Ge doping

Magnetic and electrical transport study of the intrinsic magnetic topological insulator MnBi2Te4 with Ge doping

Efficient Magnon Injection and Detection via the Orbital Rashba-Edelstein Effect.

Orbital currents and accumulation provide a new avenue to boost spintronic effects in nanodevices. Here, we use interconversion effects between charge current and orbital angular momentum to demonstrate a dramatic increase in the magnon spin injection and detection efficiencies in nanodevices consisting of a magnetic insulator contacted by Pt/CuO_{x} electrodes. Moreover, we note distinct variations in efficiency for magnon spin injection and detection, indicating a disparity in the direct and inverse orbital Rashba-Edelstein effect efficiencies.

Exploration of intrinsic magnetic topological insulators in multiple-MnTe-intercalated topological insulator Bi2Te3

Exploration of intrinsic magnetic topological insulators in multiple-MnTe-intercalated topological insulator Bi2Te3

On the half-quantized Hall conductance of massive surface electrons in magnetic topological insulator films

On the half-quantized Hall conductance of massive surface electrons in magnetic topological insulator films

Peculiarities of the electronic properties in the intrinsic magnetic topological insulator MnBi2Te4

The electrical conductivity σ0(T) of single-crystal and polycrystalline samples of the intrinsic magnetic topological insulator MnBi2Te4 was measured in the temperature range from 5 to 300 K. The optical characteristics σ(ω), ɛ1(ω), ɛ2(ω) and R(λ) of MnBi2Te4 were studied in the spectral range from 1250 to 36000 cm−1 at room temperature. The anisotropy of the electrical conductivity of MnBi2Te4 was found, which arises due to the additional contribution from scattering on layer boundaries. The optical spectrum of MnBi2Te4 is formed predominantly due to interband absorption of a light wave. Despite the qualitatively similar behavior of the optical characteristics, there is some difference between poly- and single crystals in infrared region.

Sensing spin wave excitations by spin defects in few-layer-thick hexagonal boron nitride.

Optically active spin defects in wide bandgap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy [Formula: see text] spin defects contained in few-layer-thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by [Formula: see text] spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and [Formula: see text] spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.

Enhanced magnon transport through an amorphous magnetic insulator

Conduction of spin currents in disordered insulating antiferromagnets has recently been at the center of scientific debate with both long-range spin transport or no spin transport at all observed experimentally. In this study, ferromagnetic resonance has been used to probe the transmission of ac spin current through thin amorphous yttrium iron garnet (YIG) layers. The spin current is found to be mediated by evanescent spin waves with a penetration length four times larger than that of previous studies of amorphous YIG, even exceeding the spin penetration length of crystalline NiO. Published by the American Physical Society 2024

Realization of semimagnetic and magnetic topological insulators via topological surface states floating

Realization of semimagnetic and magnetic topological insulators via topological surface states floating

Explicit-time Floquet topological superconductivity in a microwave/infrared frequency AC voltage-driven Josephson junction

Anomalous Floquet topological superconductivity with chirality can be achieved by applying a dc-bias voltage across the Josephson junction with a sandwiched magnetic topological insulator (TI), in which the intrinsic Josephson phase provides a time-dependent periodic driving [R.-X. Zhang and S. Das Sarma, ]. In this work, we remove the bias voltage and connect the magnetic TI to an external AC voltage source to modulate the chemical potential, thus bringing about an explicit-time Floquet periodic driving. In the context of the driving, the system is similarly found to convert into a two-dimensional anomalous Floquet topological superconductor with chirality. By tuning the AC voltage source's frequency, we obtain a rich variety of novel Floquet topological superconducting phases with chirality. Particularly, by manipulating such static parameters as Zeeman field and superconducting pairing potential, a series of topological superconducting phase transitions are also exhibited, accompanied by exotic Floquet topological superconducting phases with chirality. Published by the American Physical Society 2024

Manipulating chiral spin transport with ferroelectric polarization.

A magnon is a collective excitation of the spin structure in a magnetic insulator and can transmit spin angular momentum with negligible dissipation. This quantum of a spin wave has always been manipulated through magnetic dipoles (that is, by breaking time-reversal symmetry). Here we report the experimental observation of chiral spin transport in multiferroic BiFeO3 and its control by reversing the ferroelectric polarization (that is, by breaking spatial inversion symmetry). The ferroelectrically controlled magnons show up to 18% modulation at room temperature. The spin torque that the magnons in BiFeO3 carry can be used to efficiently switch the magnetization of adjacent magnets, with a spin-torque efficiency comparable to the spin Hall effect in heavy metals. Utilizing such controllable magnon generation and transmission in BiFeO3, an all-oxide, energy-scalable logic is demonstrated composed of spin-orbit injection, detection and magnetoelectric control. Our observations open a new chapter of multiferroic magnons and pave another path towards low-dissipation nanoelectronics.

Phononic dynamical axion in magnetic Dirac insulators

Phononic dynamical axion in magnetic Dirac insulators

A balanced quantum Hall resistor

The quantum anomalous Hall effect in magnetic topological insulators has potential for use in quantum resistance metrology applications. Electronic conductance is quantized to e2/h (where e is the elementary charge and h is the Planck constant) due to the effect, which persists down to zero external magnetic field and is compatible with the quantum standard of voltage. However, metrological applications of the quantum anomalous Hall effect are currently restricted by the need for low measurement currents and low temperatures. Here we report a measurement scheme that increases the robustness of a zero-magnetic-field quantum anomalous Hall resistor and extends its operating range to higher currents. In the scheme, we simultaneously inject current into two disconnected perimeters of a multi-terminal Corbino device, which is based on V0.1(Bi0.2Sb0.8)1.9Te3, to balance the electrochemical potential between the edges. This screens the electric field that drives backscattering through the bulk and thus improves the stability of the quantization at increased currents. Our approach could also be applied to existing quantum resistance standards that rely on the integer quantum Hall effect.

Highly efficient field-free switching of perpendicular yttrium iron garnet with collinear spin current

Yttrium iron garnet, a material possessing ultralow magnetic damping and extraordinarily long magnon diffusion length, is the most widely studied magnetic insulator in spintronics and magnonics. Field-free electrical control of perpendicular yttrium iron garnet magnetization with considerable efficiency is highly desired for excellent device performance. Here, we demonstrate such an accomplishment with a collinear spin current, whose spin polarization and propagation direction are both perpendicular to the interface. Remarkably, the field-free magnetization switching is achieved not only with a heavy-metal-free material, Permalloy, but also with a higher efficiency as compared with a typical heavy metal, Pt. Combined with the direct and inverse effect measurements, we ascribe the collinear spin current to the anomalous spin Hall effect in Permalloy. Our findings provide a new insight into spin current generation in Permalloy and open an avenue in spintronic devices.

Harnessing Interlayer Magnetic Coupling for Efficient, Field‐Free Current‐Induced Magnetization Switching in a Magnetic Insulator

Owing to the unique features of low Gilbert damping, long spin‐diffusion lengths, and zero Ohmic losses, magnetic insulators are promising candidate materials for next‐generation spintronic applications. However, due to the localized magnetic moments and the complex metal–oxide interface between magnetic insulators and heavy metals, spin‐functional Dzyaloshinskii–Moriya interactions or spin Hall and Edelstein effects are weak, which diminishes the performance of these typical building blocks for spintronic devices. Herein, the exchange coupling between metallic and insulating magnets is exploited for efficient electrical manipulation of heavy metal/magnetic insulator heterostructures. By inserting a thin Co layer, the spin‐orbit torque efficiency is enhanced by more than 20 times, which significantly reduces the switching current density. Moreover, field‐free current‐induced magnetization switching caused by a symmetry‐breaking non‐collinear magnetic texture is demonstrated. This work launches magnetic insulators as an alternative platform for low‐power spintronic devices.

Current Induced Field‐Free Switching in a Magnetic Insulator with Enhanced Spin‐Orbit Torque

AbstractThe energy‐efficient spin‐orbit torque (SOT) based devices are essential for future memory and logic technologies. To realize a deterministic switching, an external in‐plane magnetic field is usually needed to break the symmetry, which becomes an obstacle for device applications. Here, a field‐free switching in a perpendicularly magnetized yttrium iron garnet covered with an oblique deposited Pt with nitrogen incorporation is demonstrated. The spin‐orbit torque efficiency is enhanced with the increasing incorporation ratio of nitrogen in Pt. The maximum effective spin Hall angle of Pt(N) can reach 0.113, which is almost two times larger than that of pure Pt in Pt/YIG. Meanwhile, the switching current density is reduced with the incorporation of nitrogen. These findings open a route toward high‐efficiency SOT driven spintronic devices based on magnetic insulators.

Nonlinear Hall effect and scaling law in Sb-doped topological insulator MnBi4Te7

The nonlinear Hall effect (NLHE), as a new member of Hall effect family, has been realized in many materials, attracting a great deal of attention. Here, we report the observation of NLHE in magnetic topological insulator Sb-doped MnBi4Te7 flakes. The NLHE generation efficiency can reach up to 0.06 V−1, which is comparable to that observed in MnBi2Te4. Differently, the NLHE can survive up to 200 K, much larger than the magnetic transition temperature. We further study the scaling behavior of the NLHE with longitudinal conductivity. The linear relationship with opposite slope when temperature is below and above the magnetic transition temperature is uncovered. It reveals that the NLHE originates from skew scattering. Our work provides a platform to search NLHE with larger generation efficiency at higher temperatures.