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Published in last 50 years
The results of two experiments are presented to illustrate the leveling effect of thick layers of SiO on rough substrate surfaces. This effect permits the use of metallic underlayers as substrates for films of NiFe.
An analysis is made of the modes of magnetization reversal and rotation in thin ferromagnetic films. The ways in which the various modes can be employed for destructive and non-destructive memories are discussed and their performance limitations considered. Existing film memory efforts are partially surveyed and the material and system problems are examined. Possible future developments are also discussed.