The current activity in LSI and high density semiconductor memory development has increased emphasis on the need for the reduction of process-induced defects. An appreciable number of these defects is associated with photofabrication steps due to photomask and/or photoresist variations. In order to minimize defects caused by these steps, it is necessary to determine the type and density of photomask/resist faults that result in any given device defect. The evaluation techniques used should not require highly sophisticated and expensive equipment that would prevent their use in a normal production environment. With these objectives in mind, a test pattern has been designed to evaluate both photomask and photoresist process variables. Test procedures using typical production processes have been developed for this pattern to evaluate such parameters as average alignment accuracy, mask image distortion, etching control, and mask durability. The test pattern and associated evaluation test procedures are described. The more significant aspects are discussed and some illustrative results are presented where appropriate.
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