LSAT Substrates Research Articles

磁性材料 ＳｒＦｅＯ３エピタキシャル薄膜の作製と物性

We have prepared high-quality epitaxial films of SrFeO3 by the pulsed laser deposition and a subsequent ozone oxidation. Mossbauer spectroscopy and resistance measurements revealed the good oxygen stoichiometry of the films. The resistivity of 500 A-thick SrFeO3(001) film grown on the LSAT(001) substrate was by a factor of 4 lower than that of polycrystalline sample treated under high oxygen pressure of 500 atm. A positive sign of the Hall coefficient in the paramagnetic temperature range strongly supports the picture that the conduction carriers are oxygen holes. The temperature dependence of the resistivity showed a change of the curvature at around 110K, corresponding to the phase transition from the paramagnetic state to the screw-spin type antiferromagnetic one.

Role of substrate on the dielectric and piezoelectric behavior of epitaxial lead magnesium niobate-lead titanate relaxor thin films

The effect of various substrates on the electrical and electromechanical properties of 100-nm-thick epitaxial 0.9[Pb(Mg1/3Nb2/3)O3]–0.1[PbTiO3](0.9PMN–0.1PT) thin films is investigated. (001) 0.9PMN–0.1PT films are grown on (001)LaAlO3(LAO), (La, Sr)(Al, Ta)O3(LSAT), SrTiO3(STO), and MgO substrates with 40-nm-thick top and bottom La0.5Sr0.5CoO3 electrodes by pulsed laser deposition. X-ray diffraction results indicate that the films on LAO, LSAT, and STO are stressed biaxially in compression in the film-substrate interface whereas the films on MgO are stressed in tension. A decrease in the temperature of dielectric maximum (Tm) together with an increase in the dielectric constant and the longitudinal piezomodulus is observed with decreasing in-plane epitaxial stresses for LAO, LSAT, and STO substrates. The films on MgO substrates have the highest dielectric constant and piezomodulus with Tm below room temperature. The variation in Tm may be attributed to the shift in the transformation temperature from the paraelectric state to the relaxor state due to internal stresses in the film-substrate interface. Electrical and electromechanical properties should depend strongly on internal stresses in the vicinity of the phase transformation, which is reflected in our experimental observations.

New substrates for HTSC microwave devices

A new substrate material LSAT, a 30/70 mole % solid solution between LaA10 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> and Sr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> AITaO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> , has been prepared for the purposes of eliminating twinning, strain and non-isotropic microwave properties found in pure LaA10 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> substrates. At 300 K and 30/70 mole %, LSAT is cubic with lattice parameter of 7.737 Å. The dielectric properties of single crystal LSAT (30/70 mole %) substrates have been measured at 10 GHz and 300 K and determined to be: dielectric constant ε=22.5; and, loss tangent tan(δ) ⩽ 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> . High quality c -axis oriented high critical temperature superconducting (HTSC), YBa <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> 0 <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7-δ</sub> (YBCO), thin films have been deposited on (001) single crystal LSAT substrates. The crystal quality of these films is excellent as evidenced by the full width half maximum (FWHM) rocking curve widths of typically 300 arc-seconds. Critical current densities (as measured using magnetization) are about 4 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 10 K. Microwave film properties include an onset transition temperature (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) higher than 91 K, transition width (ΔT <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) less than 5 K, surface resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</sub> lower than copper (30 mω) at 85 K and 35 GHz for a film of thickness 2500 Å.