The purpose of this work was on the one hand to produce Co-Mo-P (or B) deposits and on the other to use our Co-P electrolyte as universal and to obtain Co-W-P or Co-Mo-P thin films from common solution. The Co-W-P electrolyte with sodium tungstate Na2WO4 or tungsten phosphoric acid H3[P(W3O10)4] as a source of W-ions was well studied. In this paper we present the process of Co-Mo-P (or B) electroless deposition from either sulfate and chloride bath at basic conditions using sodium hypophosphite or sodium borohydride as a reducing agent. The material and chemical properties of the obtained films were characterized. The paper focuses on the deposition process and study of electroless deposited films for using in microelectronic technology. The Co-Mo-P and Co-Mo-B thin films were obtained from sulfate and chloride bath correspondingly. The refractory metal has been introduced to the solutions by adding molybdate ions. The Co-Mo-P and Co-Mo-B were obtained by chemical method. The structure of electroless deposited Co-Mo-P (B) films was amorphous as determined by XRD analyze. By this is meant that barrier properties of electroless deposited Co-Mo-P(B) thin films are bound to be reasonably good. The resistivity of the deposited on Co-seed Co-Mo-P thin films with thickness of 60nm after annealing was 80 μΩ.cm. The resistivity of the Co-Mo-B layers with thickness of about 50-60 nm was 100 μΩ.cm and 38-40 μΩ.cm for Co and Cu seed, respectively. Co-Mo-P deposition process is less expensive as compared to Co-W-P deposition by reason of very low Mo-concentration in bath (0.1 g/l). References E.J. O'Sullivan, A.G. Schrott, M. Paunovic, C.J. Sambucetti, J.R. Marino, P.J. Bailey, S. Kaja, and K.W. Semkow, IBM J. Res. Develop., 42, p. 607 (1998). F.Pearlstein, R.F.Weigman, Plating, 54, 714 (1967). Physico-chemical origins of the chemical reduction of cobalt, K.M. Gorbunova ed., Science Publishing, Moscow (1974) (in Russian).Y. Shacham-Diamand, Y. Sverdlov and N. Petrov, J. Electrochem. Soc., 148, C162 (2001). 5. Y.Shacham-Diamand, A.Zylberman, N.Petrov, Y.Sverdlov, Microel. Eng., 64, p.315-320 (2002) Figure 1