Two-dimensional (2D) materials are widely studied due to their unique physical, optical, electrical properties and good compatibility with various synthesis methods. Tin disulfide (SnS2) has high uniformity and conformality even at low process temperatures and is a two-dimensional material with accurate thickness control using atomic layer deposition (ALD). However, since the crystallinity of thin film is low at a low process temperature, various post-annealing methods are being studied to compensate for film quality. In this work, we compared the crystal structures, chemical binding energies, and electrical properties of post-annealed SnS2 thin films at hydrogen sulfide concentrations of 4.00 % and 99.99 %. The crystallinity, grain size, and carrier concentrations of the SnS2 thin film were highest at a post-annealing temperature of 350 ℃ and a hydrogen sulfide concentration of 99.99 %, and the chemical binding energies corresponded with the standard Sn4+ states, forming a pure 2D-hexagonal SnS2 phase. In addition, SnS2 thin films deposited via ALD showed high uniformity and conformality in large-scale wafers and trench structure wafers.