Single crystals of CaMgSi were produced using the metal flux synthesis method in a Mg/Al 1:1 mixture. The large rod-shaped crystals measure up to 7 mm in length. This phase crystallizes with the orthorhombic TiNiSi structure type (space group Pnma; a = 7.4752(2) Å, b = 4.42720(10) Å, c = 8.3149(2) Å; R1 = 0.021). Despite its relationship to semiconducting Zintl phases Mg2Si and Ca2Si, CaMgSi is metallic at room temperature; this produces a positive (∼160 ppm) 29Si MAS NMR chemical shift and is supported by DOS calculations. A metal to semimetal electronic transition at around 50 K is evident in the resistivity, magnetic susceptibility, and electron paramagnetic resonance measurements. Low temperature powder X-ray diffraction data indicates that a structural distortion accompanies this transition. The electronic heat capacity coefficient (0.4695 mJ/mol·K2) determined from low temperature heat capacity data supports the designation of CaMgSi as a semimetal at low temperature. The hydrogen storage capacity of this phase is negligible (≤0.5 wt % hydrogen), although exposure to hydrogen does destabilize the structure, inducing decomposition at 500 °C.