Low Temperature Coefficient Of Frequency Research Articles

Design and analysis of mode-matched decoupled mass MEMS gyroscope with improved thermal stability

This paper presents an efficient design approach for microelectromechanical systems (MEMS) gyroscope considering the design constraint of MEMSCAP’s Silicon-on-Insulator Multi-User MEMS Processes (SOIMUMPs). A design for a decoupled mass MEMS resonant gyroscope with tuning electrodes is presented to minimize cross-axis coupling and optimize the gyroscope’s performance. The device features a size of 1.8 ×2.772 mm2 . A decoupled mass MEMS gyroscope has been designed using a novel mechanical beam configuration that optimizes the structural design to reduce unwanted interactions between drive and sense axes motions. Mode order has been achieved by obtaining the first two modes as drive and sense modes at 9946.3 Hz and 10 202.7 Hz, respectively. Parallel plate electrostatic tuning electrodes have been added to adjust and match the drive and sense modes at the resonant frequencies of 9946 Hz. This mode matching is crucial for optimizing gyroscope performance, accuracy, and sensitivity. The effects of temperature variation on the performance of the designed decoupled mass MEMS gyroscope have been investigated, particularly in terms of its mode-matched operation achieved using tuning electrodes. Finite element method (FEM) simulations were conducted, demonstrating that thermal stability was achieved, and mode-matched operation was maintained within the temperature range of −40 °C to 80 °C. The gyroscope exhibits enhanced performance compared to existing MEMS gyroscopes under mode-matched conditions, featuring a lower temperature coefficient of frequency (TCF) at 0.0415 Hz °C−1 in the drive mode and 0.0165 Hz °C−1 in the sense mode. FEM analysis for the fabrication process tolerances has been done, where MEMS gyroscope’s resonant frequencies, output capacitance, output displacement, and sense mode quality factor have shown negligible changes to fabrication process tolerances. Transient analysis was conducted using CoventorWare MEMS+ 3D schematic, which was integrated with MATLAB Simulink to measure the MEMS gyroscope’s output response, which corresponded with the varying input angular velocity signal.

Electrical actuation of single-crystal diamond MEMS resonators at high temperatures

Achieving efficient low-voltage actuation of microelectromechanical system (MEMS) resonators in high-temperature environments poses a difficult topic due to the thermal interference and the risk of high-temperature failure. In this work, the single-crystal diamond (SCD) resonators fabricated through the ion implantation-assisted lift-off (IAL) technique exhibit a SCD-on-SCD cantilever structure. We propose an electrical actuation system based on the electrostatic effect specifically designed for SCD MEMS resonators with a low radio-frequency amplitude of ∼ 100 mV. The SCD resonators demonstrate stable and efficient actuation across a wide temperature range, from room temperature to 500 °C. Importantly, the actuation voltage exhibits little impact on the resonance frequency and the Q factor of the resonator. The SCD resonator showcases exceptional thermal stability in resonance frequency, with a low temperature coefficient of frequency (TCF) below −12 ppm/°C up to 500 °C. The developed actuation scheme holds tremendous potential as a robust platform for realizing SCD MEMS devices, particularly in applications requiring high integration at high temperatures.

Study on the Fabrication and Acoustic Properties of Near-Stoichiometric Lithium Tantalate Crystal Surface Acoustic Wave Filters

Near-stoichiometric lithium tantalate (NSLT) wafers with different Li contents were prepared by vapour transfer equilibrium (VTE) method and fabricated into surface acoustic wave filters. The temperature coefficient of frequency, insertion loss, and bandwidth of the surface acoustic wave filters were tested using a special chip test bench and a network analyzer. The results show that the temperature coefficient of frequency shows a trend of first decreasing and then increasing with the increase in Li content, and the temperature stability of the surface acoustic wave filters is best when the Li content is 49.75%. It is also found that the surface acoustic wave filter fabricated from NSLT wafers has 21.18% lower temperature coefficient of frequency, 7.3% lower insertion loss, and 2.8% lower bandwidth than those fabricated from congruent lithium tantalate wafers. Therefore, NSLT crystals are more suitable for applications in acoustic devices, providing a new idea for performance enhancement of 5G communication devices.

Hetero Acoustic Layer Surface Acoustic Wave Resonator Composed of LiNbO3 and Quartz.

In this work, a shear-horizontal (SH) mode surface acoustic wave (SAW) resonator based on LiNbO3 (LN)/Quartz (Qz) hetero acoustic layer (HAL) structure was studied by simulation and experiment. By this HAL structure, the displacement and electric displacement are well confined in the piezoelectric layer. A lower mechanical loss of Qz than that of lossy amorphous SiO2 further enhances the quality ( Q ) factor. In addition, a negative temperature coefficient of frequency (TCF) of LN is compensated by selecting the crystalline orientation of Qz with a positive TCF. According to simulation results, the Euler angles of (0°, 101°, and 0°) and the normalized thickness of 0.2-0.3 λ (wavelength) for LN are selected to obtain a higher impedance ratio ( Z -ratio) and bandwidth (BW). The Euler angles of (0°, 160°, and 90°) for Qz are selected to obtain the positive maximum TCF. The fabricated resonator exhibits a Z -ratio of 95 dB and a BW of 15.9% in the 700 MHz range. The fit figure of merit (FoM) reaches 410, which is the best level ever reported for an LN-based resonator. The TCF of the resonator is -77 ppm/°C at anti-resonance frequency. A group of resonators composed of LN and LN/Qz with thin and thick electrodes were fabricated to further illustrate the good performance of LN/Qz. The LN/Qz HAL SAW resonator demonstrated in this work exhibits a high Z -ratio, low TCF, and wideband, which has the potential for high-performance wideband filters with steep passband and good temperature characteristics.

6-20 GHz 30% ScAlN Lateral Field-Excited Cross-Sectional Lamé Mode Resonators for Future Mobile RF Front Ends.

This article reports on 30% scandium-doped AlN (ScAlN) lateral field-excited (LFE) cross-sectional Lame' mode resonators (CLMRs) with unprecedented performance in the 6-20 GHz range. By combining high-crystallinity 30% ScAlN piezoelectric thin films, a lithographic tunability of the resonance frequency, and a simple three-mask post-CMOS compatible fabrication process, we propose a technology platform that can enable the mass production of low-loss, wideband, and compact microacoustic filtering devices spanning a wide spectrum portion on the same chip for the next-generation radio frequency front ends (RFFEs) of handsets. This article demonstrates a successful scaling of the microacoustic technology well beyond the sub-6-GHz fifth-generation (5G) band, as well as the outstanding capabilities of high-crystallinity 30% ScAlN piezoelectric layers in delivering high-quality factor ( Q ) and high-electromechanical coupling ( kt2 ) resonators, notably exceeding the state of the art in terms of relevant figures of merit (FOMs). Furthermore, we experimentally investigate the impact of geometrical parameters, such as tethering configuration and width-over-length ratio on the devices' 3-dB quality factor ( [Formula: see text]), power linearity (PL), and temperature coefficient of frequency (TCF). By adopting a statistical approach for data analysis, we determine the optimal geometry to maximize the Q value. Moreover, we experimentally demonstrate that a fully tethered device's configuration ensures superior PL, lower TCF, and higher device yield and select that as the best design tradeoff between all the variables under consideration. Finally, we discuss a further scaling of LFE CLMRs, both in terms of higher doping levels in the piezoelectric layer, in order to enhance the performance of microacoustic filters, and in terms of higher operation frequencies, in order to reach and cover the mm-wave spectrum.

Investigation on the temperature coefficient of frequency performance of LiNbO3 on quartz and glass surface acoustic wave resonators

High impedance ratio (Z-ratio), low temperature coefficient of frequency (TCF) and spurious free characteristic are three main requirements for surface acoustic wave (SAW) resonators. The reported LiTaO3/Quartz (Qz) hetero acoustic layer (HAL) resonator can satisfy them, but the bandwidth is too narrow. LiNbO3 (LN) is suitable for wideband resonators, but the TCF is too large due to its high coupling factor. In this work, we study wideband HAL SAW resonators combining LN and three kinds of substrates with positive TCF and small coefficient of thermal expansion, including Qz, ABC-G and ZERO glasses. By simulation, the Euler angles of (0°, 101°, 0°) for LN, (0°, 160°, 90°) for Qz, and the 0.1–0.2λ (λ is the wavelength) LN thickness are used. Results show LN/Qz, LN/ABC-G and LN/ZERO exhibit Z-ratio of 82.7 dB, 76.2 dB and 76.2 dB, respectively. LN/ABC-G shows the lowest TCF of −61 ppm C−1 at resonance frequency and −62 ppm C−1 at anti-resonance frequency.

Environment-friendly surface acoustic wave humidity sensor with sodium alginate sensing layer

A low-cost and environment-friendly surface acoustic wave (SAW) humidity sensor was fabricated on a quartz substrate using sol-gel/spin-coated sodium alginate (SA) sensing layer. The sensing mechanism is based on the frequency shift of the SAW sensor caused by both mass loading and electrical loading, with the former being the dominant factor. The SA film prepared in this study is an environment-friendly material with a large number of hydroxyl and carboxylate groups, which easily adsorb and react with H2O molecules to form hydrogen bonds. These adsorbed H2O molecules lead to significantly enhanced mass loading and signal responses of the SAW sensor. Electrical loading effect is also generated due to the transfer of hydrogen ions in the H2O molecules, which alters the electrical resistance and results in changes of resonant frequencies of the SAW device. When the relative humidity (RH) is increased from 35% to 85%, the responses of the SAW sensor with 1 wt% SA are significantly decreased. Whereas in a low humidity environment (e.g., RH <35%), the responses of the sensor show a linear relationship with the change of humidity. The developed humidity sensor shows good short-term/long-term stabilities and a low temperature coefficient of frequency.

Analysis of longitudinal leaky surface acoustic waves on quartz thin plate bonded to similar-material substrate

The propagation and resonance properties of longitudinal leaky surface acoustic waves (LLSAWs) on bonded structures consisting of a quartz (Qz) thin plate and a Qz support substrate with different Euler angles were investigated theoretically. By using both an X-cut Qz thin plate and a Qz support substrate with optimal Euler angles, we obtained LLSAWs with a larger coupling factor, a smaller attenuation, and a lower temperature coefficient of frequency than those on a single Qz substrate. Furthermore, from the resonance properties simulated by the finite element method, the bonded structures were found to exhibit a large admittance ratio and a high quality factor, which could not be obtained when using a single Qz substrate; the bandwidth, however, was as small as 0.016%–0.086%.

Near-Zero Drift and High Electromechanical Coupling Acoustic Resonators at &gt; 3.5 GHz

In this article, near-zero drift and high electromechanical coupling acoustic resonators have been designed and demonstrated. The acoustic resonator is based on Lamb acoustic waves in a bimorph composed of lithium niobate on silicon dioxide. Our approach breaks through a performance boundary in conventional Lamb-wave resonators by introducing the bimorph while operating at higher order resonant modes. This enables the resonator to achieve frequency scalability, a low-temperature coefficient of frequency, and high electromechanical coupling altogether. The electromechanical coupling and temperature coefficient of the resonator were analytically optimized for the A <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> mode through adjusting the thicknesses of different materials in the bimorph. Resonators with different dimensions and stack thickness were fabricated and measured, resulting in a temperature coefficient of frequency ranging from -17.6 to -1.1 ppm/°C, high electromechanical coupling ranging from 13.4% to 18%, and quality factors up to 800 at 3.5 GHz. The achieved specifications are adequate for fifth-generation (5G) sub-6-GHz frequency bands n77 and n78.

A New Class of High-Overtone Bulk Acoustic Resonators Using Lithium Niobate on Conductive Silicon Carbide

This letter presents a new class of High-overtone Bulk Acoustic Resonators (HBARs) with only top electrodes but excellent performance using lithium niobate (LN) thin films on conductive silicon carbide (SiC). The 4-inch single-crystalline lithium niobate thin film on conductive SiC (LNCSiC) substrate was prepared by ion-cutting process. Since the conductive SiC serves as both the resonant cavity and the floating electrode, the HBARs based on LNCSiC with only top electrodes were designed and fabricated. The devices show a wide frequency response span exceeding 2.0 GHz, a frequency spacing of 10 MHz, an excellent f $\cdot $ Q $_{\textit {LAKIN}}$ product of ${9.6}\times {10} ^{{13}}$ Hz ( f $\cdot $ Bode-Q of ${1.1}\times {10} ^{{14}}$ Hz), and a low temperature coefficient of frequency (TCF) of −18.9 ppm/°C. The frequency response shift of the proposed HBAR can be achieved by just adjusting the in-plane orientation of the top electrodes. Additionally, a multi-band filter was numerically synthesized based on the proposed HBARs, showing a spectral spacing of 10 MHz and a passband span of more than 2.0 GHz. Upon further optimizations, the proposed HBARs with a wide frequency response, a high- f $\cdot $ Q , and a low-TCF will be very promising for radio-frequency applications.

Temperature-insensitive silicon resonant pressure sensor by thermal stress control

A temperature-insensitive silicon resonant pressure sensor is developed with an extremely low temperature coefficient of frequency (TCF). A novel self-compensation method is proposed to counteract the effect of the elastic modulus temperature coefficient (TCE) of silicon on the TCF by the thermal stress generated by vacuum packaging layers. On this basis, a positive TCFS shift is introduced by thermal tensile stress, and a negative TCFE shift is introduced by the TCE of silicon. The TCFS shifts can be adjusted as close as possible to the value of −TCFE by adjusting the thickness of the diaphragm and resonator, sharply decreasing the total TCF. The resonant pressure-sensing chip is fabricated using micromachining technology. Experimental results show that the maximum TCF value of the proposed resonant pressure sensor is 7.3 ppm/°C (that is, 0.46 Hz/°C). Moreover, its nonlinearity after polynomial compensation is better than 0.01% FS at the temperature ranging from −10 ℃ to +60 ℃.

A Low Temperature Drifting Acoustic Wave Pressure Sensor with an Integrated Vacuum Cavity for Absolute Pressure Sensing.

In this paper we demonstrate a novel acoustic wave pressure sensor, based on an aluminum nitride (AlN) piezoelectric thin film. It contains an integrated vacuum cavity, which is micro-fabricated using a cavity silicon-on-insulator (SOI) wafer. This sensor can directly measure the absolute pressure without the help of an external package, and the vacuum cavity gives the sensor a very accurate reference pressure. Meanwhile, the presented pressure sensor is superior to previously reported acoustic wave pressure sensors in terms of the temperature drift. With the carefully designed dual temperature compensation structure, a very low temperature coefficient of frequency (TCF) is achieved. Experimental results show the sensor can measure the absolute pressure in the range of 0 to 0.4 MPa, while the temperature range is from 20 °C to 220 °C with a TCF of −14.4 ppm/°C. Such a TCF is only about half of that of previously reported works.

High-Performance SAW Resonator With Simplified LiTaO3/SiO2 Double Layer Structure on Si Substrate.

In response to the increased mobile data traffic, there is a growing need for more low-loss RF band filters with steep frequency characteristics, and high-quality ( Q )-factor and low-temperature coefficient of frequency (TCF) resonators are required to achieve this. We previously reported that for a surface acoustic wave (SAW) resonator on a three-layer structure, which is composed of a thin LiTaO3 (LT) plate whose orientation is 50° rotated YX propagation, SiO2 layer, and AlN layer on a Si substrate, a Q-factor several times higher than that of an SAW resonator on a standard 42° rotated YX propagation LiTaO3 (42YX-LT) substrate could be obtained. In this study, we investigated this layer structure and found that a two-layer structure, in which the AlN layer is removed, achieves a high Q -factor. Numerical analyses using a finite element method showed that the acoustic wave energy can be confined to the surface of the two-layer substrate, and the TCF and electromechanical coupling coefficient ( k2 ) were improved by optimizing the thickness of each layer. We fabricated and evaluated prototype one-port resonators with the two-layer structure and the standard 42YX-LT SAW substrate with resonant frequencies from 0.95 to 3.6 GHz. An improvement of the Q-factor of 3 to 4 times compared with that of the resonator with standard 42YX-LT substrate was observed for the two-layer structure, which means that a reduction of complexity of the layer structure could be obtained without performance loss. The two-layer structure was applied to a 2.4-GHz band Wi-Fi filter to achieve high performances such as low-loss, better steepness, and high attenuation.

Temperature Cross-Sensitivity of AlN-Based Flexural Plate Wave Sensors

In this paper, we investigate the temperature cross-sensitivity of aluminum nitride (AlN)-based flexural plate wave devices for sensing applications in contact with liquids. In our improved device topology, the interdigital transducers are designed as a buried electrode, and thus, are electrically shielded, enabling full immersion of the sensor into the liquid. The fabricated devices showed a mass sensitivity of 240 cm2/g for loading with deionized water which is in good agreement with the theoretical predictions. The temperature coefficient of frequency (TCF) was evaluated for devices with initially compressive and tensile stressed AlN layers. Devices with compressive film stress exhibited a TCF of −62 ppm/K to −28 ppm/K, while the devices with tensile film stress showed an increased TCF of −391 ppm/K to −72 ppm/K. It is shown that variations in in-plane tension are mainly accountable for the increased TCF, while the lower TCF is primarily caused by material softening.

A humidity sensor based on AlN Lamb wave resonator coated with graphene oxide of different concentrations

A high-performance humidity sensor based on an AlN (aluminum nitride) Lamb wave resonator coated with graphene oxide (GO) is presented in this paper. With the porous structure and oxygen-containing groups of GO as the sensing layer, the humidity sensor exhibits a high sensitivity of 26 kHz/%RH at 10%–90% relative humidity. However, more than half of the frequency variation occurs in the range of 70%RH to 90%RH. In this paper, we propose a vacuum film-coating method to improve the performance of the GO film. With this GO film, the sensitivity is increased by 160% in the humidity range between 10% to 60%RH compared to conventional ones. The sensor also demonstrates a low temperature coefficient of frequency, small hysteresis, and short response (~9 s)/recovery (~11 s) time. Therefore, the humidity sensor with GO shows great potential in practical applications.

A high performance humidity sensor based on surface acoustic wave and graphene oxide on AlN/Si layered structure

A surface acoustic wave (SAW) humidity sensor based on AlN/Si (doped) layered structure and graphene oxide (GO) sensing layer is proposed for high sensitivity and low temperature coefficient of frequency. With the GO thin film, the sensitivity of the humidity sensor is increased to 42.08 kHz/RH% when the relative humidity is greater than 80%RH. The humidity sensor performs well even at both very low (≤10%RH) and very high (≥90%RH) detection range of humidity. The present sensor has low hysteresis, excellent short term repeatability and long term stability (variation less than ± 2%). The sensor also shows a fast response and short recovery time. Moreover, using the AlN/Si (doped) layered structure, the thermal stability of the sensor is significantly improved. After being covered with GO thin film, the temperature coefficient of frequency (TCF) of the sensor is further reduced to −22.1 ppm/°C, much smaller than the previously reported SAW humidity sensors.

High-Performance SAW Resonator on New Multilayered Substrate Using LiTaO3 Crystal.

To develop the high-performance filters and duplexers required for recent long-term evolution frequency bands in mobile handsets, a surface acoustic wave (SAW) resonator is needed that has a higher quality (Q) and a lower temperature coefficient of frequency (TCF). To achieve this, the authors focused on acoustic energy confinement in the depth direction for a rotated Y-X LiTaO3 (LT) substrate. Characteristics of multilayered substrates with low-impedance and high-impedance layers under LT layer were studied numerically in terms of acoustic energy distribution, phase velocity, coupling coefficient, and temperature characteristics employing a finite-element method simulation. After several calculations, a novel multilayered structure was developed that uses SiO2 for a low-impedance layer and AlN for a high-impedance layer under the thin LT layer. A one-port resonator using the new substrate was fabricated, and its experimental results showed that the developed resonator had a Bode-Q over 4000 and TCF of -8 ppm/°C, which are four times higher than and one-fifth as small as those of a conventional 4° YX-LT SAW resonator, respectively. By applying this technology, a band 25 duplexer with very narrow duplex gap was successfully developed, which shows extremely low insertion loss, steep cutoff characteristics, and stable temperature characteristics.

A Study on AIN Film-Based SAW Attenuation in Liquids and Their Potential as Liquid Ethanol Sensors.

In this paper, we report attenuation characteristics of aluminum nitride (AIN) film-based surface acoustic waves (SAWs) in liquids and their potential as liquid ethanol sensors. An AIN film-based SAW resonator was fabricated for liquid sensing application. The fabricated SAW device had a Rayleigh wave mode at a resonant frequency of 147.1 MHz and a low temperature coefficient of frequency (TCF) of −21.7 ppm/K. The signal attenuation in the transmission line of the SAW device was presented when ethanol (ETH) droplets and deionized water (DIW) with different concentrations and volume (0.2–1 µL) were dropped on the sensing area respectively. The attenuation of SAW as a function of time and liquid position was investigated. Residues left on the wave propagation path resulted in a frequency shift of the SAW device after liquid evaporation. For ETH, there was a 49 kHz frequency shift caused by a large amount of residues, while the frequency shift of DIW was not distinct, on account of a clean surface. The linear relationship between evaporation rate and ethanol concentration was demonstrated. The evaporation rate of ethanol droplets showed good consistency, and the evaporation time variation was less than 5% at each concentration level. Therefore, the proposed SAW device had great potentials to determine ethanol concentrations based on evaporation rate.

Propagations of Rayleigh and Love waves in ZnO films/glass substrates analyzed by three-dimensional finite element method**Project supported by the National Natural Science Foundation of China (Grant No. 11304160), the Natural Science Foundation of Jiangsu Provincial Higher Education Institutions, China (Grant No. 13KJB140008), and the Foundation of Nanjing University of Posts and Telecommunications, China (Grant No. NY213018).

Propagation characteristics of surface acoustic waves (SAWs) in ZnO films/glass substrates are theoretically investigated by the three-dimensional (3D) finite element method. At first, for ZnO films/glass substrates, the simulation results confirm that the Rayleigh waves along the [0001] direction and Love waves along the direction are successfully excited in the multilayered structures. Next, the crystal orientations of the ZnO films are rotated, and the influences of ZnO films with different crystal orientations on SAW characterizations, including the phase velocity, electromechanical coupling coefficient, and temperature coefficient of frequency, are investigated. The results show that at appropriate , Rayleigh wave has a maximum k2 of 2.4% in (90°, 56.5°, 0°) ZnO film/glass substrate structure; Love wave has a maximum k2 of 3.81% in (56°, 90°, 0°) ZnO film/glass substrate structure. Meantime, for Rayleigh wave and Love wave devices, zero temperature coefficient of frequency (TCF) can be achieved at appropriate ratio of film thickness to SAW wavelength. These results show that SAW devices with higher k2 or lower TCF can be fabricated by flexibly selecting the crystal orientations of ZnO films on glass substrates.

High-Temperature Electromechanical Characterization of AlN Single Crystals.

Hexagonal AlN is a non-ferroelectric material and does not have any phase transition up to its melting point (>2000°C), which indicates the potential use of AlN for high-temperature sensing. In this work, the elastic, dielectric, and piezoelectric constants of AlN single crystals were investigated at elevated temperatures up to 1000°C by the resonance method. We used resonators of five different modes to obtain a complete set of material constants of AlN single crystals. The electrical resistivity of AlN at elevated temperature (1000°C) was found to be greater than 5 × 10(10) Ω · cm. The resonance frequency of the resonators, which was mainly determined by the elastic compliances, decreased linearly with increasing temperature, and was characterized by a relatively low temperature coefficient of frequency, in the range of -20 to -36 ppm/°C. For all the investigated resonator modes, the elastic constants and the electromechanical coupling factors exhibited excellent temperature stability, with small variations over the full temperature range, <11.2% and <17%, respectively. Of particular significance is that due to the pyroelectricity of AlN, both the dielectric and the piezoelectric constants had high thermal resistivity even at extreme high temperature (1000°C). Therefore, high electrical resistivity, temperature independence of electromechanical properties, as well as high thermal resistivity of the elastic, dielectric, and piezoelectric properties, suggest that AlN single crystals are a promising candidate for high-temperature piezoelectric sensing applications.