Abstract
In this paper we demonstrate a novel acoustic wave pressure sensor, based on an aluminum nitride (AlN) piezoelectric thin film. It contains an integrated vacuum cavity, which is micro-fabricated using a cavity silicon-on-insulator (SOI) wafer. This sensor can directly measure the absolute pressure without the help of an external package, and the vacuum cavity gives the sensor a very accurate reference pressure. Meanwhile, the presented pressure sensor is superior to previously reported acoustic wave pressure sensors in terms of the temperature drift. With the carefully designed dual temperature compensation structure, a very low temperature coefficient of frequency (TCF) is achieved. Experimental results show the sensor can measure the absolute pressure in the range of 0 to 0.4 MPa, while the temperature range is from 20 °C to 220 °C with a TCF of −14.4 ppm/°C. Such a TCF is only about half of that of previously reported works.
Highlights
Microelectromechanical system (MEMS) devices have been developed and widely tremendously in the past decades [1–6]
This paper describes an aluminum nitride (AlN)-based acoustic wave absolute pressure sensor, containing an integrated vacuum cavity as pressure reference
Si/AlN/Mo and an open silicon backside wave pressure sensor. It is formed by a stack of Si/AlN/Mo and an open silicon backside etched etched hole hole which which was was used used as as aa relative relative pressure pressure reference
Summary
Tao Wang 1,2,3, *, Zhengjie Tang 1,2,3 , Huamao Lin 3 , Kun Zhan 1,2 , Jiang Wan 1,2 , Shihao Wu 3 , Yuandong Gu 3 , Wenbo Luo 1,2 and Wanli Zhang 1,2. University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Film and Integrated Devices, Xiyuan Avenue, Chengdu 611731, China. Shanghai Industrial μTechnology Research Institute, No 235, Chengbei Road, Jiading District, Shanghai
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