Thermal atomic layer deposition (ALD) of platinum is usually achieved using molecular oxygen as the reactant gas and deposition temperatures in the 250–300 °C range. In this work, crystalline thin films of metallic Pt have been grown by ALD at temperatures as low as 100 °C using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) as the Pt precursor and ozone as the reactant gas. The novel process is characterized by a constant growth rate of 0.45 A per cycle within the 100–300 °C temperature window. The Pt films are uniform with low impurity levels and close-to-bulk resistivities even at the lowest deposition temperature. We show that the initial growth on SiO2 surfaces is nucleation-controlled and islandlike and demonstrate the good conformality of the low-temperature ALD process by Pt deposition on anodic alumina nanopores and mesoporous silica thin films.