Low-temperature Atomic Layer Deposition Research Articles

Overlapping top gate electrodes based on low temperature atomic layer deposition for nanoscale ambipolar lateral junctions

We present overlapping top gate electrodes for the formation of gate defined lateral junctions in semiconducting layers as an alternative to the back gate/top gate combination and to the split gate configuration. The optical lithography microfabrication of the overlapping top gates is based on multiple layers of low-temperature atomic layer deposited hafnium oxide, which acts as a gate dielectric and as a robust insulating layer between two overlapping gate electrodes exhibiting a large dielectric breakdown field of >1×109V m−1 . The advantage of overlapping gates over the split gate approach is confirmed in model calculations of the electrostatics of the gate stack. The overlapping gate process is applied to Hall bar devices of mercury telluride in order to study the interaction of different quantum Hall states in the nn′, np, pn and pp′ regime.

InGaN blue resonant cavity micro-LED with RGY quantum dot layer for broad gamut, efficient displays

The technology of RGBY micro resonant cavity light emitting diodes (micro-RCLEDs) based on quantum dots (QDs) is considered one of the most promising approaches for full-color displays. In this work, we propose a novel structure combining a high color conversion efficiency (CCE) QD photoresist (QDPR) color conversion layer (CCL) with blue light micro RCLEDs, incorporating an ultra-thin yellow color filter. The additional TiO2 particles inside the QDPR CCL can scatter light and disperse QDs, thus reducing the self-aggregation phenomenon and enhancing the eventual illumination uniformity. Considering the blue light leakage, the influences of adding different color filters are investigated by illumination design software. Finally, the introduction of low-temperature atomic layer deposition (ALD) passivation protection technology at the top of the CCL can enhance the device's reliability. The introduction of RGBY four-color subpixels provides a viable path for developing low-energy consumption, high uniformity, and efficient color conversion displays.

Highly conductive and flexible transparent hybrid superlattices with gas-barrier properties: Implications in optoelectronics

Transparent electrodes and passivation layers find extensive application in optoelectronic devices such as light-emitting diodes, solar cell. Integrating transparent conductive and gas diffusion barrier layers into a unified component holds promise for enhancing device performance and cost-effectiveness. However, research on these dual-function materials remains relatively scarce. Here, we introduce an innovative hybrid superlattice composed of ZnO and self-assembled monolayers, designed to function simultaneously as transparent conductive and gas diffusion barrier. Fabricated using low-temperature atomic layer deposition and molecular layer deposition techniques, the hybrid superlattice exhibited robust electric conductivity (surpassing 1400 S cm-1), exceptional moisture barrier characteristics (water vapor transmission rate < 4 × 10-7 g m-2 day-1), and remarkable flexibility. We systematically investigated the significant electrical improvement, attributing it to the formation of a well-defined amorphous/crystalline phase-composite structure in the ZnO nanolayer. Moreover, the organic layers in the superlattice enhance resilience against environmental degradation and mechanical deformation by forming a multilayered structure that effectively decouples defects in the underlying layers. These compelling features position the hybrid superlattice as a promising candidate for transparent conductive gas diffusion barriers, with diverse applications in emerging optoelectronics.

Advanced TiO2/Al2O3 Bilayer ALD Coatings for Improved Lithium-Rich Layered Oxide Electrodes.

Surface modification is a highly effective strategy for addressing issues in lithium-rich layered oxide (LLO) cathodes, including phase transformation, particle cracking, oxygen gas release, and transition-metal ion dissolution. Existing single-/double-layer coating strategies face drawbacks such as poor component contact and complexity. Herein, we present the results of a low-temperature atomic layer deposition (ALD) process for creating a TiO2/Al2O3 bilayer on composite cathodes made of AS200 (Li1.08Ni0.34Co0.08Mn0.5O2). Electrochemical analysis demonstrates that TiO2/Al2O3-coated LLO electrodes exhibit improved discharge capacities and enhanced capacity retention compared with uncoated samples. The TAA-5/AS200 bilayer-coated electrode, in particular, demonstrates exceptional capacity retention (∼90.4%) and a specific discharge capacity of 146 mAh g-1 after 100 cycles at 1C within the voltage range of 2.2 to 4.6 V. The coated electrodes also show reduced voltage decay, lower surface film resistance, and improved interfacial charge transfer resistances, contributing to enhanced stability. The ALD-deposited TiO2/Al2O3 bilayer coatings exhibit promising potential for advancing the electrochemical performance of lithium-rich layered oxide cathodes in lithium-ion batteries.

Antiferroelectric Hf0.25Zr0.75O2 With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition

Antiferroelectric Hf_0.25Zr_0.75O₂ With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition

Low-temperature Ta-doped TiOx electron-selective contacts for high-performance silicon solar cells

Carrier-selective contacts have been widely used to reduce the recombination losses of the minority carriers and boost the transport of the majority carriers at the contact regions for high-performance crystalline silicon solar cells. In this paper, the electron-selective Ta-doped TiOx (TTO) thin films with wide bandgap were prepared by means of low-temperature atomic layer deposition (ALD) technique. The systematic examinations were conducted on the interfacial structures, elemental analysis, passivation, and electrical performance of the TTO films. The results demonstrated that ALD TTO thin films possess better surface passivation (τeff = 355.31 μs, 130 °C annealing), and excellent electrical performance (ρc = 0.7 mΩ cm2, 200 °C annealing) on c-Si, in comparison to pure TiOx and TaOx films. Benefiting from these advantages, the optimized TTO based electron-selective contact solar cell achieved a high power conversion efficiency (PCE) of 21.58 %, reaching the cutting-edge level of the wide bandgap oxide based electron-selective contact solar cells. The low-temperature, low-energy-consumption and simple ALD TTO electron-selective contacts present a promising approach for Si-based high-efficiency solar cells.

Enhancing silicon-nitride formation through ammonolysis of silanes with pseudo-halide substituents.

Considering the challenges in reactivity, potential contamination, and substrate selectivity, the ammonolysis of traditional halosilanes in silicon nitride (SiN) thin film processing motivates the exploration of alternative precursors. In this pioneering study, we employed density functional theory calculations at the M06-2X/6-311++G(3df,2p) level to comprehensively screen potential pseudo-halide substituents on silane compounds as substitutes for conventional halosilanes. Initially, we investigated the ammonolysis mechanism of halosilanes, exploring factors influencing activation barriers, with the aid of frontier molecular orbital and charge density analyses. Subsequently, a systematic screening of silane substituents from group 14 to group 16 was conducted to identify pseudo-halides with low reaction barriers. Additionally, we examined the inductive effects on pseudohalide substituents. Using cluster models to represent the silicon surface validates the realistic prediction of ammonolysis barriers with a simplified model. Our findings indicate that pseudo-halide substituents from group 16, particularly those with electron-withdrawing groups, present as practical alternatives to traditional halosilanes in SiN thin film processing, including applications such as low-temperature atomic layer deposition (ALD) techniques.

(Invited) Atomic Layer Processing of MoS2

Molybdenum disulfide (MoS2) is one of several transition metal dichalcogenides consisting of a layer of transition atoms sandwiched between layers of chalcogens. Interest in MoS2 has been driven by its 1.8 eV direct electronic band gap in monolayer form and its moderate electron mobility (10-100 cm2/Vs) even when only three atoms (~6.5 Å) thick. These properties offer potential for retaining or improving speed and efficiency in scaled electronic devices.Advancing MoS2 and other 2D materials into high volume manufacturing of semiconductor devices requires scalable deposition and etching processes. The process of atomic layer deposition (ALD) has been used to deposit 2D materials and can deposit films at lower temperatures for back-end-of-line (BEOL) compatibility. However, ALD relies on covalent surface reactions. When these reactions occur at high density during film nucleation, the resulting film is typically amorphous or nanocrystalline and requires thermal annealing to form a more well-ordered layered crystal structure. A key challenge is to establish a low temperature ALD process that achieves a layered crystal structure with low defectivity. In terms of material removal, MoS2 films have been etched by plasma-based atomic layer etching (ALE). ALE is analogous to ALD except that cyclic surface reactions promote volatility and lead to film removal rather than deposition. Together, atomic layer deposition and atomic layer etching constitute complementary facets of atomic layer processing and enable new pathways for nanomanufacturing.Here, we describe our recent progress in thermal ALD and thermal ALE of MoS2 films. For ALD of MoS2, we use cycles of MoF6 and H2S between 150-350 °C. Nucleation on metal oxide surfaces shows a strong temperature dependence, which is attributed in part due to the temperature dependence of surface hydroxyl groups. Density functional theory (DFT) calculations support the role of hydroxyls in promoting nucleation and reveal that MoF6 dissociates on the surface rather than participating in a ligand exchange reaction. The dissociation reaction leads to the formation of a metal fluoride interface between the oxide surface and the MoS2 film. Surface species following MoF6 include MoOF4 and MoO3, both of which convert to MoS2 during the H2S pulse, which releases H2O and HF byproducts. Films deposited at 200 °C and below are amorphous but convert to a layered structure upon annealing in H2S. Deposition at 250 °C yields films with a layered crystal structure without post-deposition annealing.Thermal ALE of MoS2 films deposited by ALD can be achieved using alternating exposures of MoF6 and H2O. It was found that MoS2 films are fluorinated by the MoF6 and then oxygenated by H2O. Volatile byproducts are MoF2O2, H2S, and HF, which are primarily released during the H2O half-cycle. Thermal ALE of MoS2 is temperature dependent and follows Arrhenius behavior. At 200 °C, the mass loss per cycle is 6 ng/cm2 (~0.5 Å/cycle) and reaches 271 ng/cm2 at 300 °C. Etch stop behavior was observed once the etched film approached the metal fluoride interface of the growth surface. Layered MoS2 deposited by ALD with post-deposition annealing exhibited layer-by-layer etching at 0.2 Å/cycle at 250 °C.The ALD results provide key insights into the nucleation and growth of MoS2 films using low temperature ALD. Further work is required to control basal plane orientation but achieving crystalline films well within BEOL thermal budgets is promising. The results from the ALE study provide insights into the etching reactions for MoS2. Combining the two processes offers greater control over MoS2 films. Using ALD followed by ALE and post-deposition annealing, we achieved few-layer MoS2 films. These combined thermal processes represent a pathway for integration of MoS2 films into device manufacturing.

Nb (V, Nb/V)-Doped TiO2 Films as New Transparent Conducting Oxides Synthesized by a Novel ALD Process: Effect of Dopant Content and Growing Conditions

Titanium oxide (TiO2) is a wide bandgap (3.0-3.4 eV) material that presents a high transparency in the visible range, a high refractive index, and an insulator behavior. In order to vary its structural, optical, and electronic properties with the objective to synthesize transparent conductive oxide (TCO) films, we have investigated several doping strategies. Due to their extra electron and atomic radius close to that of Ti, respectively larger for Nb or smaller for V, these are among the interesting potential dopants of TiO2. In this objective to synthesize TiO2-based TCO films, we have performed atomic layer deposition (ALD) with different concentrations of Nb dopants and by varying the growth conditions.Highly transparent and conducting Nb-doped TiO2 thin films were produced by a low-temperature (300 °C) new ALD process using titanium tetraisoproxide, niobium(V) ethoxide, and water as a reagent. The deposition was performed in a supercycle fashion, alternating Ti precursor and water cycles followed by Nb precursor and water cycles, which allowed controlling the dopant concentration. This study focused on non-annealed and annealed films under N2 and forming gas. The dopant concentration significantly affected the fabricated films' thickness, structure, morphology, composition, and optical and electrical properties. Indeed, the crystalline anatase phase was obtained before annealing for a low Nb content, while the films were found amorphous for a larger Nb content. The non-annealed film thickness and surface roughness decreased with increasing Nb doping, while the size of the anatase grains increased, and the films became amorphous. This progressive amorphization of the films with increasing Nb content was observed by several techniques (G-XRD, Raman, and FTIR). Surprisingly, films annealed at 600°C led to the formation of larger and more homogeneous grains than for non-annealed films. Moreover, the XRD, Raman, and FTIR results clearly indicated the substitution of Ti by Nb in the anatase structure. Furthermore, the XPS spectra showed that the amount of Ti and Nb in the Ti3+ and Nb4+ oxidation states increased with increasing the Nb content. These two latter points may explain the decrease in resistivity caused by the increase of density of shallow donor states in addition to the decrease of electrons scattering caused by the grain size increase. In addition, the film transmittance was increased up to 15% while the resistivity decreased to 10-3 Ω.cm leading to a TCO behavior. Using the figure of Merit (FoM) established over a wide spectral range from AM1.5g irradiance [*] giving the maximum photocurrent density of an ideal solar cell equipped with such TCO electrode, it showed an improvement by a factor of 8 by Nb doping, reaching a maximum of FoM for the film produced with a particular Nb doped rate of 0.33.Other strategies of TCO improvement were investigated, such as growing V-doped, and Nb&V co-doped TiO2 films by innovative dual and triple precursors ALD processes, respectively. Once more, the dopant kind and amount strongly impacted the growth rate, structure, morphology, optical and electrical properties of those two new kinds of doped TiO2 materials. The full study of Nb-doped TiO2 films will be presented, while the comparative results obtained for V-doped and Nb/V-doped materials will be introduced.The Nb-doped TiO2's TCO performances and future improvement based on V-doped, and Nb&V co-doped may pave the way for the use of those kinds of materials in solar radiation energy conversions as electrode or junction materials for Photovoltaic or photo(electro)catalytic systems.[*] J.A. Mendez-Gamboa, R. Castro-Rodriguez, I. V. Perez-Quintana, R.A. Medina-Esquivel, A. Martel-Arbelo, A figure of merit to evaluate transparent conductor oxides for solar cells using photonic flux density, Thin Solid Films. 599 (2016) 14–18. https://doi.org/10.1016/j.tsf.2015. .12.038. Figure 1

Thermal Atomic Layer Deposition of Gallium Nitride Films Using Tris(dimethylamido)Gallium and Ammonia

Gallium nitride (GaN) is a III-V semiconductor material with a wide and direct bandgap, relatively high carrier mobility, and high breakdown voltage. GaN is suitable for applications in optoelectronic devices and power devices, including light-emitting diodes (LEDs) and high electron mobility transistors (HEMTs). Typically, epitaxial GaN layers are grown by metal-organic chemical vapor deposition (MOCVD) at high deposition temperatures. However, low-temperature growth of GaN is necessary for temperature-sensitive devices and substrates. Atomic layer deposition (ALD) is a technique that offers unique advantages, such as low process temperature, excellent conformality, and atomic-level thickness control.In this study, we investigated the thermal ALD process of GaN at a low temperature of 200°C. Tris(dimethylamido)gallium (TDMAGa) was selected as the Ga precursor because tris(dimethylamido)titanium and tris(dimethylamido)aluminum were successfully adopted in the low-temperature ALD process of TiN and AlN thin films [1]. The growth and properties of ALD GaN films were investigated. ALD GaN films exhibited a self-limiting reaction with a deposition rate of 1.34 Å/cycle at 200°C, with a refractive index of 2.07. The saturation times for TDMAGa and NH3 pulses were 5 s and 30 s, respectively. Deposition at 250°C showed a deposition rate higher than 3 Å/cycle due to the thermal decomposition of TDMAGa. The ALD GaN film deposited at 200°C was amorphous and nitrogen deficient. To improve the crystallinity and composition, the as-deposited GaN films were annealed in an NH3 atmosphere in the deposition chamber without air exposure. The effects of annealing on the crystallinity and composition of the films were investigated. Acknowledgments This work was supported by Samsung Display Co., Ltd.

Improved Electrical Resistivity of Atomic-Layer-Deposited Copper Thin Films on Polyimide Substrates by an In Situ ZnO Interlayer.

The low-temperature atomic layer deposition of metal on polymer surfaces is often challenging owing to the deficiency of functional groups and reactivity. Here, the deposition of ALD-Cu employing Cu(hfac)2 and Et2Zn at a low temperature (120 °C) on polyimide (PI) substrates is improved by the utilization of an in situ ultrathin ALD-ZnO buffer layer. A conformal and continuous ALD-Cu thin film with low resistivity (6.07 μΩ cm) is fabricated on an ALD-ZnO/PI substrate. The findings demonstrate that the ALD-ZnO buffer layer provides chemisorption and a nucleation site for the initial growth of ALD-Cu. Transmission electron microscopy and energy-dispersive X-ray analysis reveal that the ALD-ZnO layer plays a buffer role in the fitness of ALD-Cu on PI substrates and its ability to elicit the formation of an ALD-ZnO nanocluster and polar surface. ALD-ZnO can be effectively utilized as a buffer layer for polymer-based ALD-metal processes, showing potential in flexible electronic applications.

Crystalline Tin Disulfide by Low-Temperature Plasma-Enhanced Atomic Layer Deposition as an Electrode Material for Li-Ion Batteries and CO2 Electroreduction

Crystalline Tin Disulfide by Low-Temperature Plasma-Enhanced Atomic Layer Deposition as an Electrode Material for Li-Ion Batteries and CO₂ Electroreduction

Enhancement of electrical performance in indium-zinc oxide thin-film transistors with HfO2/Al2O3 gate insulator deposited via low-temperature ALD

Several studies have been conducted on amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) with the aim of applying them to the next-generation low-power displays. To improve the electrical performance of conventional AOS TFTs, which are known for their poor switching characteristics, we fabricated indium-zin oxide (IZO) TFTs with HfO2/Al2O3 gate insulator deposited via low-temperature atomic layer deposition (ALD). We optimized the electrical performance of the fabricated TFTs by varying the thickness of the IZO channel and Al2O3 insulator, respectively. Compared to the samples with a thermally grown 150 nm thick SiO2 gate insulator, the samples with a 10 nm thick IZO channel and a 10/70 nm thick HfO2/Al2O3 gate insulator exhibited the subthreshold swing of 0.24 V/dec, saturation carrier mobility of 7.49 cm2/V∙s and on–off current ratio of 1.09 × 107, which were improved by more than 47 %, 64 % and 5 times, respectively. Also, the threshold voltage shift in positive and negative bias stress conditions were improved to + 0.90 and – 1.75 V, respectively.

Low-Temperature ALD of SbOx /Sb2 Te3 Multilayers with Boosted Thermoelectric Performance.

Nanoscale superlattice (SL) structures have proven to be effective in enhancing the thermoelectric (TE) properties of thin films. Herein, the main phase of antimony telluride (Sb2 Te3 ) thin film with sub-nanometer layers of antimony oxide (SbOx ) is synthesized via atomic layer deposition (ALD) at a low temperature of 80 °C. The SL structure is tailored by varying the cycle numbers of Sb2 Te3 and SbOx . A remarkable power factor of 520.8 µW m-1 K-2 is attained at room temperature when the cycle ratio of SbOx and Sb2 Te3 is set at 1:1000 (i.e., SO:ST = 1:1000), corresponding to the highest electrical conductivity of 339.8 S cm-1 . The results indicate that at the largest thickness, corresponding to ten ALD cycles, the SbOx layers act as a potential barrier that filters out the low-energy charge carriers from contributing to the overall electrical conductivity. In addition to enhancing the scattering of the mid-to-long-wavelength at the SbOx /Sb2 Te3 interface, the presence of the SbOx sub-layer induces the confinement effect and strain forces in the Sb2 Te3 thin film, thereby effectively enhancing the Seebeck coefficient and reducing the thermal conductivity. These findings provide a new perspective on the design of SL-structured TE materials and devices.

Tailoring crystallisation of anatase TiO2 ultra-thin films grown by atomic layer deposition using 2D oxides as growth template

TiO2 ultrathin films are required in many material research areas. The anatase phase was found to be more stable in case of atomic layer deposition growth, nevertheless a critical thickness of around 10 nm appears necessary to obtain crystallization on native silicon oxide on Si (001). This work focuses on direct liquid injection Atomic Layer Deposition (ALD) of TiO2 films with thicknesses about some nanometers, using titanium tetra-isopropoxide as precursor and H2O as oxidant. A particular care to the treatment of ellipsometric measurements is employed. Below the threshold value, films remain amorphous unless the growth starts onto a crystalized surface, a thick TiO2 layer in our case. Here we propose and show the efficiency of 2-dimensional (2D) [Ca2Nb3O10]− and [Ti0.865O2]0.54− nanosheets as seeds at the surface for the crystallization and epitaxy of ultra-thin films of TiO2 below the critical thickness. Furthermore, we show that the structure of the 2D nanosheets determines the growth orientation of the epitaxial anatase, namely (010) for [Ti0.865O2]0.54−, and (100) for [Ca2Nb3O10]−. These results, based on the tailoring of crystal anisotropy via adapted 2D seed nanosheets and low temperature ALD, opens the way for opto-electronics applications of titanium oxide layers of a few unit cells.

Area-Selective Deposition by Cyclic Adsorption and Removal of 1-Nitropropane.

The ever-greater complexity of modern electronic devices requires a larger chemical toolbox to support their fabrication. Here, we explore the use of 1-nitropropane as a small molecule inhibitor (SMI) for selective atomic layer deposition (ALD) on a combination of SiO2, Cu, CuOx, and Ru substrates. Results using water contact angle goniometry, Auger electron spectroscopy, and infrared spectroscopy show that 1-nitropropane selectively chemisorbs to form a high-quality inhibition layer on Cu and CuOx at an optimized temperature of 100 °C, but not on SiO2 and Ru. When tested against Al2O3 ALD, however, a single pulse of 1-nitropropane is insufficient to block deposition on the Cu surface. Thus, a new multistep process is developed for low-temperature Al2O3 ALD that cycles through exposures of 1-nitropropane, an aluminum metalorganic precursor, and coreactants H2O and O3, allowing the SMI to be sequentially reapplied and etched. Four different Al ALD precursors were investigated: trimethylaluminum (TMA), triethylaluminum (TEA), tris(dimethylamido)aluminum (TDMAA), and dimethylaluminum isopropoxide (DMAI). The resulting area-selective ALD process enables up to 50 cycles of Al2O3 ALD on Ru but not Cu, with 98.7% selectivity using TEA, and up to 70 cycles at 97.4% selectivity using DMAI. This work introduces a new class of SMI for selective ALD at lower temperatures, which could expand selective growth schemes to biological or organic substrates where temperature instability may be a concern.

Low-temperature ALD of highly conductive antimony films through the reaction of silylamide with alkoxide and alkylamide precursors

Antimony (Sb) has distinct physical properties that make it a promising candidate for use in integrated phase-change photonics and tunable optical absorbers. In this work, we present atomic layer deposition (ALD) of Sb metal thin films using new precursor combinations produced from comproportionation reactions of antimony ethoxide (Sb(OEt)3) and Tris (dimethylamido)antimony (Sb(NMe2)3) with Tris (trimethylsilyl)antimony ((SiMe3)3Sb). The growth behaviors of the Sb thin films made from the Sb(OEt)3/(SiMe3)3Sb and Sb(NMe2)3/(SiMe3)3Sb precursor combinations showed different temperature dependencies at low deposition temperatures (60–80 °C). Furthermore, the deposition temperature had a significant impact on the oxidation of the deposited Sb film after exposure to air. XRD and Raman spectroscopy confirmed the high purity of the Sb films made with the Sb(OEt)3/(SiMe3)3Sb combination and deposited at 75 °C. The presence of a Sb2O3 phase deteriorated the electrical properties of deposited Sb films. However, the electrical conductivities of the purest Sb films prepared in this study were slightly higher than those previously reported for Sb-ALD films. This approach of Sb ALD can speed up actual applications of pure metals in electronic device fabrication and can potentially be extended to other main group metals.

Nucleation and growth of low resistivity copper thin films on polyimide substrates by low-temperature atomic layer deposition

The metallization of polyimide (PI) remains a formidable challenge when using an atomic layer deposition of copper. The present study employs Cu(hfac)2 and Et2Zn to deposit the copper thin films that are highly conformal and continuous, and possess low resistivity (5.6 μΩ·cm), through a low-temperature atomic layer deposition (120 °C) with multi-pulse of Cu(hfac)2 process on a treated polyimide surface. The process exhibited both self-limiting ALD and CVD-like reactions with a growth rate of 0.079 nm/cycle. The findings demonstrate that an increase in functional groups and adsorption area on the surface of treated PI substrates enhances the adsorption of Cu(hfac)2. A model has been developed to describe the nucleation and growth kinetics of atomic layer deposition of copper on polyimide substrates, based on the adsorption mechanism of Cu(hfac)2 and the interface structure of ALD-Cu/treated PI onto the surface and into the near-surface region of the PI substrates. The academic developing in this work provides theoretical and experimental basis for the deposition using other copper precursors onto polymeric substrates in the future.

Ameliorating Uniformity and Color Conversion Efficiency in Quantum Dot-Based Micro-LED Displays through Blue-UV Hybrid Structures.

Quantum dot (QD)-based RGB micro light-emitting diode (μ-LED) technology shows immense potential for achieving full-color displays. In this study, we propose a novel structural design that combines blue and quantum well (QW)-intermixing ultraviolet (UV)-hybrid μ-LEDs to achieve high color-conversion efficiency (CCE). For the first time, the impact of various combinations of QD and TiO2 concentrations, as well as thickness variations on photoluminescence efficiency (PLQY), has been systematically examined through simulation. High-efficiency color-conversion layer (CCL) have been successfully fabricated as a result of these simulations, leading to significant savings in time and material costs. By incorporating scattering particles of TiO2 in the CCL, we successfully scatter light and disperse QDs, effectively reducing self-aggregation and greatly improving illumination uniformity. Additionally, this design significantly enhances light absorption within the QD films. To enhance device reliability, we introduce a passivation protection layer using low-temperature atomic layer deposition (ALD) technology on the CCL surface. Moreover, we achieve impressive CCE values of 96.25% and 92.91% for the red and green CCLs, respectively, by integrating a modified distributed Bragg reflector (DBR) to suppress light leakage. Our hybrid structure design, in combination with an optical simulation system, not only facilitates rapid acquisition of optimal parameters for highly uniform and efficient color conversion in μ-LED displays but also expands the color gamut to achieve 128.2% in the National Television Standards Committee (NTSC) space and 95.8% in the Rec. 2020 standard. In essence, this research outlines a promising avenue towards the development of bespoke, high-performance μ-LED displays.

Passivation capping of InAs surface quantum dots by TMA/Al2O3: PL enhancement and blueshift suppression

Passivation capping that enhances the photoluminescence (PL) of molecular beam epitaxy (MBE)-grown InAs surface quantum dots (SQDs) is realized by ex situ low-temperature atomic layer deposition (ALD)-grown Al2O3. As the Al2O3 cap thickness increased from 2 to 30 nm, the PL intensity was enhanced by 2.7-fold and the blue shift was suppressed. This is in strong contrast to wet chemistry passivation and in situ GaAs capping by MBE, both of which resulted in significant PL blueshift, due to etching in the former, and In/Ga intermixing and strain in the latter. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) reveal that the Al2O3 cap layer mimics the shape of the underlying SQDs. The cross-sectional transmission electron microscopy (TEM) further reveals that the SQD size and shape remained unchanged after Al2O3 capping, which is in strong contrast to MBE-capping. The passivation mechanisms and native oxide reduction by trimethylaluminum (TMA), including self-clean-up reaction through ligand exchange, are discussed based on the results by x-ray photoelectron spectroscopy (XPS). A detailed comparison between Al2O3 and ZnO cap layers reveals the significance of the cap properties on the SQD size/shape and PL blueshift. While the size/shape of SQDs is preserved by Al2O3 capping, the apex is slightly removed by ZnO capping, resulting in a stronger PL blueshift compared to Al2O3.