Low Voltage Operation Research Articles

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf₀.₅Zr₀.₅O₂ Ferroelectric Memory Arrays

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf₀.₅Zr₀.₅O₂ Ferroelectric Memory Arrays

Optimization of waveguide fabrication processes in lithium-niobate-on-insulator platform.

Lithium niobate (LN) is used in diverse applications such as spectroscopy, remote sensing, and quantum communications. The emergence of lithium-niobate-on-insulator (LNOI) technology and its commercial accessibility represent significant milestones. This technology aids in harnessing the full potential of LN's properties, such as achieving tight mode confinement and strong overlap with applied electric fields, which has enabled LNOI-based electro-optic modulators to have ultra-broad bandwidths with low-voltage operation and low power consumption. Consequently, LNOI devices are emerging as competitive contenders in the integrated photonics landscape. However, the nanofabrication, particularly LN etching, presents a notable challenge. LN is hard, dense, and chemically inert. It has anisotropic etch behavior and a propensity to produce material redeposition during the reactive-ion plasma etch process. These factors make fabricating low-loss LNOI waveguides (WGs) challenging. Recognizing the pivotal role of addressing these fabrication challenges for obtaining low-loss WGs, our research focuses on a systematic study of various process steps in fabricating LNOI WGs and other photonic structures. In particular, our study involves (i) careful selection of hard mask materials, (ii) optimization of inductively coupled plasma etch parameters, and finally, (iii) determining the optimal post-etch cleaning approach to remove redeposited material on the sidewalls of the etched photonic structures. Using the recipe established, we realized optical WGs with total (propagation and coupling) loss value of -10.5 dB, comparable to established values found in the literature. Our findings broaden our understanding of optimizing fabrication processes for low-loss lithium-niobate waveguides and can serve as an accessible resource in advancing LNOI technology.

Measurement of space charge density distributions and dielectric resonance enhancement of beam deflection properties of KTN crystal

In recent years, potassium tantalum niobate (KTN) electro-optical deflection devices have gained considerable attention because of their notable advantages, such as large deflection angles, low operational voltage requirements, and compact dimensions. This study uses the phase-shifted interferometric optical path to characterize the influence of direct current (DC) voltage on charge density. An interferogram is acquired using the four-step phase-shifting technique, enabling the calculation of phase delays and deducing the variation in charge density. Experimental results demonstrate that the charge density near the cathode increases with an increase in DC voltage. Subsequently, we utilize the frequency dependence of the dielectric constant of the KTN crystal on the electric field. The dielectric constant can be enhanced when the characteristic frequency of the motion of the polar nanoscale region matches the frequency of the electric field. This field-induced enhancement effect improves the beam deflection performance of the KTN crystal. Application requirements in the field of high-speed random scanning can be realized through the mechanism of the KTN crystal co-acting with DC and alternating current electric fields.

Initiating cationic-anionic chemistry with stepwise surface-to-inner conversion in copper selenide superstructures for high-energy rechargeable magnesium batteries

Copper selenides are viewed as the most capable cathode materials for rechargeable magnesium batteries, yet suffer from unsatisfactory energy density due to their low operating voltage plateau (∼0.9 V vs. Mg/Mg2+) and insufficient reversible capacity. Herein, a stepwise conversion from surface cationic-anionic redox to inside electrochemical displacement reaction is realized in copper selenide (Cu2-xSe) superstructure cathodes. A highly reversible high-voltage platform at ∼1.6 V is discovered during discharge process. Ex-situ spectroscopy and microscopy results demonstrate that the high-voltage plateau is contributed by surface Cu2+ charge-carrier transformation and anionic Se2– redox reaction while sufficient inner Cu-Mg replacement conversion at low-voltage region. Following the favorable mechanism, the Cu2-xSe superstructure cathodes can present high specific capacity of 385.4 mAh g–1 at 0.1 A g–1 and outstanding energy density of 426.3 Wh kg–1. Moreover, the Cu2-xSe superstructure cathodes also maintain a reversible capacity of 223.6 mAh g–1 over 700 cycles with 0.0147 % capacity degradation per cycle at 1.0 A g–1 and long-term charge-discharge lifetime for 3000 cycles at 5.0 A g–1. This research reports a new Mg2+ storage mechanism for copper selenide cathodes and provides novel route to develop high-energy-density rechargeable magnesium batteries.

21‐3: Closed‐Form Expression for the Current‐Voltage Characteristics of OLEDs

The development of OLED displays is a non‐ergodic process in which there is continuous novel change; and comprehending emitters that are evolving requires new theory, or at least modification of that which is already possessed. For the first time, a new data‐validated closed‐form physics‐based expression is derived for the I‐V characteristics of OLEDs in this paper. Two parameters emerge from the new model: liminal current and liminal voltage. Both parameters are expressed in terms of device and material parameters, allowing a device engineer to intuitively design experiments to target low voltage operation OLEDs. Robust parameter extraction methods are proposed and validated with experimental data.

Interfacial Charge Transport Enhancement of Liquid-Crystalline Polymer Transistors Enabled by Ionic Polyurethane Dielectric.

In organic field-effect transistors (OFETs) using disordered organic semiconductors, interface traps that hinder efficient charge transport, stability, anddevice performance are inevitable. Benchmark poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) liquid-crystalline polymer semiconductor has been extensively investigated for organic electronic devices due to its promising combination of charge transport and light emission properties. This study demonstrates that high-capacitance single-layered ionic polyurethane (PU) dielectrics enable enhanced charge transport in F8T2 OFETs. The ionic PU dielectrics are composed of a mild blending of PU ionogel and PU solution, thereby forming a solid-state film with robust interfacial characteristics with semiconductor layer and gate electrode in OFETs and measuring high capacitance values above 10 µF cm-2 owing to the combined dipole polarization and electric double layer formation. The optimized fabricated ionic PU-gated OFETs exhibit a low-voltage operation at -3V with a remarkable hole mobility of over 5 cm2 V-1 s-1 (average = 2.50 ± 1.18 cm2 V-1 s-1), which is the highest mobility achieved so far for liquid-crystalline F8T2 OFETs. This device also provides excellent bias-stable characteristics in ambient air, exhibiting a negligible threshold voltage shift of -0.03V in the transfer curves after extended bias stress, with a reduced trap density.

Development of IPMC actuators with high bending uniformity and orientation

Ionic polymer-metal composite (IPMC) actuators have attracted considerable scientific interest in the field of robotics and artificial muscles due to their low operating voltage, high strain capacity, and lightweight. However, the non-uniform bending of IPMC actuators affects their control accuracy and limits their potential applications. In this work, the surface voltage of IPMC actuators was measured and the internal electric field distribution was numerically computed. It was concluded that the non-uniform bending is mainly due to the non-uniform distribution of hydrated cations inside the IPMC as a result of the inhomogeneous electric field. The bending uniformity is improved by sputtering a gold layer on the surface of the IPMC actuator, and a support strip is introduced to limit the bending of the IPMC in the width direction, resulting in an improvement of its pointing characteristics. It is found that the bending uniformity of IPMC improved by 35.27% and 119.48% by sputtering at an input voltage of 2.5 V and 5 V respectively. When the input voltage is fixed at 2.5 V and 5 V, the bending in the width direction is reduced by 75.68% and 93.12% with the support structure, respectively.

Domain Switching Characteristics in Ga-Doped HfO2 Ferroelectric Thin Films with Low Coercive Field.

The gallium-doped hafnium oxide (Ga-HfO2) films with different Ga doping concentrations were prepared by adjusting the HfO2/Ga2O3 atomic layer deposition cycle ratio for high-speed and low-voltage operation in HfO2-based ferroelectric memory. The Ga-HfO2 ferroelectric films reveal a finely modulated coercive field (Ec) from 1.1 (HfO2/Ga2O3 = 32:1) to an exceptionally low 0.6 MV/cm (HfO2/Ga2O3 = 11:1). This modulation arises from the competition between domain nucleation and propagation speed during polarization switching, influenced by the intrinsic domain density and phase dispersion in the film with specific Ga doping concentrations. Higher Ec samples exhibit a nucleation-dominant switching mechanism, while lower Ec samples undergo a transition from a nucleation-dominant to a propagation-dominant reversal mechanism as the electric field increases. This work introduces Ga as a viable dopant for low Ec and offers insights into material design strategies for HfO2-based ferroelectric memory applications.

Investigation for AGZO RRAM using the RF Co-sputtering method

Recently, the Internet of Things (IOT) has rapidly developed, leading to the development of many smart devices. Moreover, artificial intelligence (AI) and 5G communication are successful, and the demand for high-performance memory is increasing. The emerging nonvolatile RRAM has many advantages, such as low power consumption, fast operation speed, simple structure and excellent scalability, compared with traditional memories; this is promising for complex computing and mass storage. Zinc oxide (ZnO) is a promising candidate for transparent conducting oxide (TCO) applications because of its abundance, high conductivity, low toxicity, and cost-effectiveness. It is currently used in various optoelectronic components including thin-film transistors (TFTs) and photodetectors. Notably, TCO has been increasingly used in the switching layers of random resistive access memory systems. In this paper, we intend to combine AGO with a large energy gap and ZnO with a high conductivity to prepare AGZO as a switching layer for RRAM by co-sputtering. By adjusting the oxygen flow ratio and power of co-sputtering, the AGZO RRAM exhibited high performance with more than 1400 switching cycles, 102–103 on/off ratio, and low operation voltage, and high- and low-resistance states could be maintained for more than 10,000[Formula: see text]s.

Study on low power ADC Design using Memristor on Embedded systems

As portable and battery-operated devices become more common, embedded systems must meet the highest standards for low power consumption. Conventional analog-to-digital converters (ADCs) add a substantial amount of power to these systems overall. The design and application of low power ADCs using memristor technology are examined in this work. Memristors present a viable substitute for traditional ADC components because of their high density and non-volatile memory capabilities. Through the utilization of memristors' special qualities—like their low voltage operation and powerlessness—this research attempts to create ADC architectures with much lower power consumption. The suggested design creates a small, effective, and power-saving solution by integrating memristors in the analog front end and digital processing stages of the ADC. According to experimental results, memristor-based ADCs can save a significant amount of power without sacrificing performance, which makes them perfect for next-generation embedded systems applications. By advancing the design of energy-efficient embedded systems, this study may prolong the lifespan of portable electronics and open up new applications in wearable and Internet of Things (IOT) technologies.

High-sensitivity and energy-efficient chloride ion sensors based on flexible printed carbon nanotube thin-film transistors for wearable electronics

The advent of flexible single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) has transformed electronics, providing significant benefits like low operating voltage, reduced power consumption, cost-effectiveness, and improved signal amplification. This study focuses on leveraging these attributes to develop a novel flexible high-sensitivity and energy-efficient chloride ion sensors based on printed flexible SWCNT-TFTs utilizing polymers-sorted semiconducting SWCNTs (sc-SWCNTs) as the active layers and ion liquids-poly(4-vinylphenol as dielectric layers along with the evaporated deposition of aluminum electrodes and printed silver electrodes as the gate and source-drain electrodes, respectively. The sensors exhibit several operational advantages, including low voltage requirements (≤1 V), rapid response speed (5.32 s), significant signal amplification (Up to 702.6 %), low power consumption (0.31 μJ at 1 mmol chloride ion), good repeatability, high sensitivity for both low and high concentrations of chloride ion (up to 100 mmol/L) and excellent mechanical flexibility (No obvious changes after bending for 10,000 times with a 5 mm radius). The detection mechanism of chloride ions was analyzed using X-ray Photoelectron Spectroscopy (XPS). It was found that chloride ions react with silver nanoparticles (AgNPs) to form silver chloride (AgCl) on printed electrodes, impeding carrier transport and reducing the currents in SWCNT TFTs. Importantly, our sensors' compatibility with smart devices allows for real-time monitoring of chloride ion levels in human sweat, offering significant potential for daily health monitoring.

Improvement of synaptic property of GeSe based CBRAM by engineering the deposition condition of switching matrix

A study of effect of deposition condition of germanium selenide (GeSe) switching layer to Conductive bridging random access memory (CBRAM) device property was conducted to enhance memory property and synaptic property. The devices deposited under the varied deposition conditions were analyzed by current distribution of each state (Low-resistance state [LRS], High-resistance state [HRS]), conduction mechanism analysis, chemical analysis, and synaptic analysis according to pulse conditions. When we deposited switching layer at lowest power (40 W), more Ag ions move to the switching matrix and make lower operation voltage. But there were some disadvantages, which were worst distribution and higher HRS current, less memory window, nonlinear and rapid increase of potentiation process. Conversely, although the device deposited at high voltage increased the operating voltage, but there are improvements, such as the highest memory window and improved linearity of potentiation. The best sample was conducted the synaptic property measurement, and the device successfully mimicked the biological synaptic property with the good linearity of potentiation and depression, spike-rate dependent plasticity (SRDP) and spike-timing dependent plasticity (STDP) properties.

High quality a-InGaZnO and a-ZrAlO deposited at 375 °C by spray pyrolysis for low voltage operation TFTs

We report the high-performance, bottom-gate a-InGaZnO (IGZO) TFT with high-k ZrAlO (ZAO) gate insulator by spray pyrolysis (SP). The a-IGZO/ZAO TFT exhibits the average saturation mobility of 23.12 cm2 V−1 s−1, subthreshold swing of 121 mV dec-1, ION/OFFratio of ∼108 with no hysteresis and low off-state current of ∼10-19A µm−1. In addition, the TFT exhibits good interface quality with less trap density (∼9x1010 cm−2) and conduction band tail state (∼4.3x1018 cm−3) extracted from TCAD fitting. The high-performance is attributed to the formation of uniform and dense a-IGZO and ZAO thin films with low defect density. Therefore, the SP a-IGZO/ZAO TFTs have great potential to be employed in low-cost, low driving voltage TFTs for display application.

Stretchable and Breathable Electroluminescent Displays Based on Ultrathin Nanocomposite Designs.

Stretchable electroluminescent devices represent an emerging optoelectronic technology for future wearables. However, their typical construction on sub-millimeter-thick elastomers has limited moisture permeability, leading to discomfort during long-term skin attachment. Although breathable textile displays may partially address this issue, they often have distinct visual appearances with discrete emissions from fibers or fiber junctions. This study introduces a convenient procedure to create stretchable, permeable displays with continuous luminous patterns. The design utilizes ultrathin nanocomposite devices embedded in a porous elastomeric microfoam to achieve high moisture permeability. These displays also exhibit excellent deformability, low-voltage operation, and excellent durability. Additionally, the device is decorated with fluorinated silica nanoparticles to achieve self-cleaning and washable capabilities. The practical implementation of these nanocomposite devices is demonstrated by creating an epidermal counter display that allows intimate integration with the human body. These developments provide an effective design of stretchable and breathable displays for comfortable wearing.

Solution-processable low-voltage carbon nanotube field-effect transistors with high-k relaxor ferroelectric polymer gate insulator

Achieving energy-efficient and high-performance field-effect transistors (FETs) is one of the most important goals for future electronic devices. This paper reports semiconducting single-walled carbon nanotube FETs (s-SWNT-FETs) with an optimized high-k relaxor ferroelectric insulator P(VDF-TrFE-CFE) thickness for low-voltage operation. The s-SWNT-FETs with an optimized thickness (∼800 nm) of the high-k insulator exhibited the highest average mobility of 14.4 cm2 V−1s−1 at the drain voltage (I D) of 1 V, with a high current on/off ratio (I on/off >105). The optimized device performance resulted from the suppressed gate leakage current (I G) and a sufficiently large capacitance (>50 nF cm−2) of the insulating layer. Despite the extremely high capacitance (>100 nF cm−2) of the insulating layer, an insufficient thickness (<450 nm) induces a high I G, leading to reduced I D and mobility of s-SWNT-FETs. Conversely, an overly thick insulator (>1200 nm) cannot introduce sufficient capacitance, resulting in limited device performance. The large capacitance and sufficient breakdown voltage of the insulating layer with an appropriate thickness significantly improved p-type performance. However, a reduced n-type performance was observed owing to the increased electron trap density caused by fluorine proportional to the insulator thickness. Hence, precise control of the insulator thickness is crucial for achieving low-voltage operation with enhanced s-SWNT-FET performance.

Bias-stress-stable sub-1.5V oxide thin-film transistors via synergistic composition of sol-gel quaternary high-k oxide dielectrics

A rising demand in reliable, energy-efficient, and large-area electronics, particularly in the realm of sol-gel oxide thin-film transistors (TFTs), has steered research focus away from semiconductor towards dielectrics. However, achieving both bias stability and low-voltage operation remains a significant hurdle. While typical oxide TFTs employ high-dielectric-constant (high-k) dielectrics with lowered film thickness to acquire low-voltage operation, they inevitably suffer from undesired defects at both bulk and interfacial trap sites in dielectric layer. In this study, bias-stress-stable all solution-processed oxide TFTs were demonstrated with operation voltage under 1.5 V via sol-gel quaternary high-k oxide dielectric (Al-Hf-Zr-O, AHZO). In-depth understanding of their individual contributions to dielectric performance leads to the acquisition of optimized composition ratios of AHZO with amorphous feature and outstanding dielectric performance, marked by dielectric constant (k) over 11, leakage current density (Jleak) below 10−5.5 A cm−2, and sturdy breakdown strength (EB) exceeding 5 MV cm−1. By integrating the AHZO with In-Ga-Zn-O (IGZO) layer, we achieved sub 1.5 V TFTs while maintaining excellent bias stability with threshold voltage (VTH) shift lower than 0.20 V for 3600 s. Our findings offer a detailed insight into the realm of multi-component oxide dielectrics, paving the way for miniaturization and reliability in functional devices and sensors.

Li Promoting Long Afterglow Organic Light-Emitting Transistor for Memory Optocoupler Module.

The artificial brain is conceived as advanced intelligence technology, capable to emulate in-memory processes occurring in the human brain by integrating synaptic devices. Within this context, improving the functionality of synaptic transistors to increase information processing density in neuromorphic chips is a major challenge in this field. In this article, Li-ion migration promoting long afterglow organic light-emitting transistors, which display exceptional postsynaptic brightness of 7000cdm-2 under low operational voltages of 10V is presented. The postsynaptic current of 0.1mA operating as a built-in threshold switch is implemented as a firing point in these devices. The setting-condition-triggered long afterglow is employed to drive the photoisomerization process of photochromic molecules that mimic neurotransmitter transfer in the human brain for realizing a key memory rule, that is, the transition from long-term memory to permanent memory. The combination of setting-condition-triggered long afterglow with photodiode amplifiers is also processed to emulate the human responding action after the setting-training process. Overall, the successful integration in neuromorphic computing comprising stimulus judgment, photon emission, transition, and encoding, to emulate the complicated decision tree of the human brain is demonstrated.

Sustainable, low-cost, high-contrast electrochromic displays via host–guest interactions

Electrochromic (EC) displays with electronically regulating the transmittance of solar radiation offer the opportunity to increase the energy efficiency of the building and electronic products and improve the comfort and lifestyle of people. Despite the unique merit and vast application potential of EC technologies, long-awaited EC windows and related visual content displays have not been fully commercialized due to unsatisfactory production cost, durability, color, and complex fabrication processes. Here we develop a unique EC strategy and system based on the natural host and guest interactions to address the above issues. A completely reusable and sustainable EC device has been fabricated with potential advantages of extremely low cost, ideal user-/environment friendly property, and excellent optical modulation, which is benefited from the extracted biomass EC materials and reusable transparent electrodes involved in the system. The as-prepared EC window and nonemissive transparent display also show comprehensively excellent properties: high transmittance change (>85%), broad spectra modulation covering Ultraviolet (UV), Visible (Vis) to Infrared (IR) ranges, high durability (no attenuation under UV radiation for more than 1.5 mo), low open voltage (0.9 V), excellent reusability (>1,200 cycles) of the device's key components and reversibility (>4,000 cycles) with a large transmittance change, and pleasant multicolor. It is anticipated that unconventional exploration and design principles of dynamic host-guest interactions can provide unique insight into different energy-saving and sustainable optoelectronic applications.

Effect of substrate temperature on growth mechanism and properties of PEALD-MgO dielectric films for amorphous-IGZO TFTs

Magnesium oxide (MgO) films have been prepared by plasma enhanced atomic layer deposition with bis(cyclopentadienyl)magnesium precursor and oxygen plasma reactant at substrate temperature between 150 °C and 450 °C. The structural, morphological, optical, and chemical properties of the prepared MgO films were studied by spectroscopic ellipsometer, grazing incidence X-ray diffraction (GIXRD), field emission scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS). The electrical property of MgO film was obtained by performing capacitance-voltage measurement on the Al/MgO/Si structures. The experiment result shows that growth rate of MgO film decreases with the deposition temperature increased. GIXRD analysis presented that MgO films are cubic with predominantly (220) crystal orientation. XPS analysis shows that ratio of Mg/O is highest in MgO film prepared at 350 °C. To illustrate the possible applications of MgO film as a gate dielectric in thin film transistor (TFT), indium‑gallium‑zinc oxide (IGZO) was used as channel layer. The optimized IGZO/MgO TFT showed an electron mobility of 1.63 cm2/Vs, an on/off current ratio of 106, and a subthreshold swing of 0.50 V/decade at a low operation voltage of −0.11 V.

J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications.

High-performance and low operating voltage are becoming increasingly significant device parameters to meet the needs of future integrated circuit (IC) processors and ensure their energy-efficient use in upcoming mobile devices. In this study, we suggest a hybrid dual-gate switching device consisting of the vertically stacked junction and metal-insulator-semiconductor (MIS) gate structure, named J-MISFET. It shows excellent device performances of low operating voltage (<0.5 V), drain current ON/OFF ratio (∼4.7 × 105), negligible hysteresis window (<0.5 mV), and near-ideal subthreshold slope (SS) (60 mV/dec), making it suitable for low-power switching operation. Furthermore, we investigated the switchable NAND/NOR logic gate operations and the photoresponse characteristics of the J-MISFET under the small supply voltage (0.5 V). To advance the applications further, we successfully demonstrated an integrated optoelectronic security logic system comprising 2-electric inputs (for encrypted data) and 1-photonic input signal (for password key) as a hardware security device for data protection. Thus, we believe that our J-MISFET, with its heterogeneous hybrid gate structures, will illuminate the path toward future device configurations for next-generation low-power electronics and multifunctional security logic systems in a data-driven society.