Low Linear Losses Research Articles

Laser ablation behavior and mechanisms of 3D carbon fiber reinforced ZrB2-SiC composite

The high-performance 3D Cf-PyC/ZrB2-SiC composite was fabricated by vibration-assisted slurry impregnation and low-temperature hot pressing. The composite exhibited superior laser ablation resistance, leading to a low linear loss rate of 1.56×10−2 mm/s at laser power density of 4878 W/cm2 (Power 300 W, Laser beam diameter 2.8 mm) for 90 s. The coupling effect of a dense SiO2 layer in fringe region followed by dense ZrO2 layer in transitional region and next porous ZrO2 layer in center region achieved superior laser ablation resistance.

Modeling and Observation of Nonlinear Damping in Dissipation-Diluted Nanomechanical Resonators.

Dissipation dilution enables extremely low linear loss in stressed, high aspect ratio nanomechanical resonators, such as strings or membranes. Here, we report on the observation and theoretical modeling of nonlinear dissipation in such structures. We introduce an analytical model based on von Kármán theory, which can be numerically evaluated using finite-element models for arbitrary geometries. We use this approach to predict nonlinear loss and (Duffing) frequency shift in ultracoherent phononic membrane resonators. A set of systematic measurements with silicon nitride membranes shows good agreement with the model for low-order soft-clamped modes. Our analysis also reveals quantitative connections between these nonlinearities and dissipation dilution. This is of interest for future device design and can provide important insight when diagnosing the performance of dissipation dilution in an experimental setting.

Design of Partially Suspended Silicon Nitride Slot Waveguides for Efficient Forward Stimulated Brillouin Scattering

We design a partially suspended silicon nitride (Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ) slot waveguide on silica to realize efficient on-chip forward stimulated Brillouin scattering (FSBS). The slot waveguide can intensify radiation pressure close to the slot and simultaneously confine both optical and acoustic modes, resulting in an enhanced FSBS gain on the order of 300 W <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> . The acoustic radiation loss is significantly suppressed due to the strong acoustic coupling in the narrow slot waveguides. We analyze the impacts of structural parameters on the SBS properties, which produces the optimal parameters for maximum SBS gain. Based on the nonlinear coupled-mode equations, we compare the performance of Stokes amplification between the Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> slot waveguides and the silicon nanowires. Simulation results indicate that the Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> slot waveguides with low linear loss can offer a larger net Stokes amplification than silicon waveguides under moderate pump power. Such approach enables efficient on-chip SBS devices in CMOS-compatible Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> platform.

Integration of Brillouin and passive circuits for enhanced radio-frequency photonic filtering

Signal processing using on-chip nonlinear or linear optical effects has shown tremendous potential for RF photonic applications. Combining nonlinear and linear elements on the same photonic chip can further enable advanced functionality and enhanced system performance in a robust and compact form. However, the integration of nonlinear and linear optical signal processing units remains challenging due to the competing and demanding waveguide requirements, specifically the combination of high optical nonlinearity in single-pass waveguides, which is desirable for broadband signal processing with low linear loss and negligible nonlinear distortions required for linear signal processing. Here, we report the first demonstration of integrating Brillouin-active waveguides and passive ring resonators on the same integrated photonic chip, enabling an integrated microwave photonic notch filter with ultradeep stopband suppressions of &amp;gt;40 dB, a low filter passband loss of &amp;lt;−10 dB, flexible center frequency tuning over 15 GHz, and reconfigurable filter shape. This demonstration paves the way for implementing high-performance integrated photonic processing systems that merge complementary linear and nonlinear properties, for advanced functionality, enhanced performance, and compactness.

Nonlinear optical properties of polycrystalline silicon core fibers from telecom wavelengths into the mid-infrared spectral region

Polycrystalline silicon core fibers (SCFs) fabricated via the molten core drawing (MCD) method are emerging as a flexible optoelectronic platform. Here, the optical transmission properties of MCD SCFs that have been tapered down to a few micrometer-sized core dimensions are characterized from the Telecom band to the mid-infrared spectal regime. The SCFs exhibit low linear losses on the order of a few dB/cm over the entire wavelength range. Characterization of the two-photon absorption coefficient \b{eta}_TPA and nonlinear refractive index n_2 of the SCFs reveals values consistent with previous measurements of single crystal silicon materials, indicating the high optical quality of the polysilicon core material. The high nonlinear figure of merit obtained for wavelengths above 2{\mu}m highlight the potential for these fibers to find application in infrared nonlinear photonics.

Si-rich Silicon Nitride for Nonlinear Signal Processing Applications

Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (~1.5 dB/cm) and enhanced Kerr nonlinear response (Re{γ} = 16 Wm−1). Thanks to these properties, our nonlinear waveguides are able to produce a π nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications.

Bisdioxaborine Polymethines with Large Third-Order Nonlinearities for All-Optical Signal Processing

Organic materials with large third-order nonlinearities in the near-infrared spectral regime are critical in the development of photonic devices to be utilized in all-optical signal processing. We have developed polymethine materials, specifically bisdioxaborine-terminated polymethine dyes, which possess large ultrafast third-order nonlinearities and low nonlinear loss all in the near-infrared spectral regime. An extended bisdioxaborine polymethine anion exhibited the largest value of gamma (third-order microscopic nonlinearity) at 1.3 mum (|gamma| = 5.7 x 10-32 esu) and showed no characteristics of symmetry breaking, unlike other polymethines of similar lengths. A neat film of this molecule maintained relatively low linear loss in the near-infrared and showed a large third-order macroscopic nonlinearity at 1.3 mum (|chi(3)| = 3.6 x 10-10 esu), with a temporal response of less than 8 ps. Furthermore, the real part of chi(3) was nearly an order-of-magnitude larger than the imaginary component. Consequently, this material exhibited good figures of merit for all-optical signal processing throughout the entire telecommunications band.

Thermally poled channel waveguides with polarization-independent electrooptic effect

We present a systematic investigation of the poling-induced electrooptic (EO) effect in germanium and nitrogen codoped channel waveguides. The channel waveguides show attractive properties: (1) almost polarization independent EO effect; (2) a flat frequency response with the modulation frequency up to 100 kHz; and (3) low linear loss and low polarization dependent loss, which demonstrate great technological potential.