Low K-value Research Articles

K-Nearest Neighbor Method for Early Detection of Diabetes Patients Based on Symptoms and Clinical Data

Diabetes is a chronic disease rarely detected and develops quickly. Diabetes can trigger other chronic diseases such as kidney failure and heart disease. Early detection is necessary to help patients treat diabetes before the disease becomes more severe. Various health examination methods to detect diabetes, but these examinations require medical expert action and cannot be carried out by anyone. In addition, examination costs are often unaffordable. This research aims to apply data mining methods, especially k-Nearest Neighbor (KNN), for early detection of diabetes patients based on disease symptoms and patient clinical data. KNN is used to classify patient symptoms and clinical data into two classes, diabetes and non-diabetes, calculating the distance between test data and training data using Euclidean Distance. The research results show that a lower k-value provides a higher accuracy value. However, accuracy at low k-values ​​is insufficient to conclude the performance of KNN for early diabetes detection. High accuracy at low k-values ​​has the potential for overfitting, and the model is not generalizing well. Apart from that, if you use a low k-value, the model only sees patterns from 1 or a few neighbors, which results in the pattern of the data not being captured by the KNN model using a k-value that is too high also risks the model becoming underfitting. The model is too general, which makes the model unreliable. This research made use of the k-fold cross-validation technique to circumvent these issues. It is possible to avoid overfitting in the constructed KNN model by employing this method. The researchers are employing k-fold=10 and k-fold=20 in their investigation. KNN This research carried out this analysis by looking at the accuracy of each iteration of the k and k-fold values. The higher the k-fold value, the more accuracy the KNN produces. Inversely proportional to the k-fold cross-validation value, the higher the k-value in KNN, the decreases the accuracy. The KNN method applied in this research provides an accuracy of 98.2692% with higher precision than recall. These findings suggest that KNN can be an effective and efficient tool for early diabetes detection.

Synthesis of eugenol-functionalized polyhedral oligomer silsesquioxane for low-k bismaleimide resin combined with excellent mechanical and thermal properties as well as its composite reinforced by silicon fiber

Introducing porous materials into resin matrix is effective to achieve low dielectric constant (low-k) value but challenge for simultaneously improving mechanical and thermal properties due to the heterogeneous dispersion of these fillers. Herein, a novel eugenol-functionalized cage-like (pore size, 1–2 nm) polyhedral oligomeric silsesquioxane (EG-POSS) was designed and synthesized, which exhibits excellent solubility and reactivity with BD-type bismaleimide resin. Thus, 4 wt% incorporated EG-POSS is uniformly dispersed in resin matrix and the resultant hybrid (BDEP-0.04) shows outstanding comprehensive performance, especially on dielectric, mechanical and thermal properties. Specifically, the dielectric constant (k) and loss (tan δ) at 1 MHz are reduced to 2.88 and 0.010 from 3.33 and 0.013. Meanwhile, the corresponding impact strength and flexural strength are improved to 18.75 KJ/m2 and 159.01 MPa, increased by 63.63 % and 27.29 %. In addition, BDEP-0.04 also exhibits the excellent thermal stability with glass transition temperature (Tg) of 290 °C, which is 8 °C higher than BD resin. Based on the lower k and tanδ value of BDEP-0.04 hybrid resin, as well as its better adhesion with silica fiber, the wave-transparent and mechanical properties of silica fiber reinforced composites (SF/BDEP-0.04) are further improved, showing that the wave transmission efficiency (94.2%), flexural strength (309.99 MPa), flexural modulus (15.70 GPa) and interlaminar shear strength (35.41 MPa) are all greatly higher than those of SF/BD. It’s concluded that EG-POSS is effective to optimize and balance the dielectric, mechanical and thermal properties of BD-type bismaleimide resin and SFs/BD composites, which is valuable for practical application in wave-transparent field.

Plasma Polymerized SiCOH Films from Octamethylcyclotetrasiloxane by Dual Radio Frequency Inductively Coupled Plasma Chemical Vapor Deposition System.

We have fabricated porous plasma polymerized SiCOH (ppSiCOH) films with low-dielectric constants (low-k, less than 2.9), by applying dual radio frequency plasma in inductively coupled plasma chemical vapor deposition (ICP-CVD) system. We varied the power of the low radio frequency (LF) of 370 kHz from 0 to 65 W, while fixing the power of the radio frequency (RF) of 13.56 MHz. Although the ppSiCOH thin film without LF had the lowest k value, its mechanical strength is not high to stand the subsequent semiconductor processing. As the power of the LF was increased, the densities of ppSiCOH films became high, accordingly high in the hardness and elastic modulus, with quite satisfactory low-k value of 2.87. Especially, the ppSiCOH film, deposited at 35 W, exhibited the highest mechanical strength (hardness: 1.7 GPa, and elastic modulus: 9.7 GPa), which was explained by Fourier transform infrared spectroscopy. Since the low-k material is widely used as an inter-layer dielectric insulator, good mechanical properties are required to withstand chemical mechanical polishing damage. Therefore, we suggest that plasma polymerized process based on the dual frequency can be a good candidate for the deposition of low-k ppSiCOH films with enhanced mechanical strength.

Analysis of Soil Erodibility Factor for Hydrologic Processes in Kereke Watershed, North Central Nigeria

: Soil erodibility factor plays essential role in determining how susceptible soil is to hydrological processes such as detachment and removal by rainfall and runoff that could influence soil erosion and sediment entrainment by flooding in an area. This paper therefore determined the erodibility k-value of soil in the Kereke watershed with the purpose of assessing its susceptibility to hydrological processes. Data was collected on some soil properties such as soil texture, soil structure, soil organic matter content, soil carbon content, soil porosity, soil bulk density, soil moisture content and soil erodibility k-value. The systematic sampling procedure was used to select thirty-two settlements which served as catchment areas for data collection; from which thirty-two soil samples were collected for analysis. Tables and graph were used to present the data, and percentages were used to depict variations in the data set. Results of the study shows that the soil samples have high percent sand particles (71.6%), moderate amount of clay particles (15.7%), silt(12.7%), organic carbon (0.6%), organic matter (1.1%), bulk density (1.4 gcm-3 ), porosity (45.2%), moisture content (14.0%) and low soil erodibility k-value of 0.018. The soil erodibility k-value in the study area was considered to be low, and therefore the soils are moderately erodible. This probably accounts for the moderate intensity of soil erosion channels and entrained sediments by flooding observed in the study area. It is therefore recommended that soil management practices should be encouraged by farmers especially planting of cover crops, shifting cultivation and fallowing system. This will allow nutrients gain and improved bulk density to limit soil erodibility capacity and good soil management in the area.
 Key words: Soil erodibility factor, hydrological processes, Kereke watershed, North Central Nigeria

Numerical assessment of high-k spacer on symmetric S/D underlap GAA junctionless accumulation mode silicon nanowire MOSFET for RFIC design

In this work, inclusion of high-k spacer on symmetric underlap S/D junctionless silicon nanowire (SiNW) MOSFET is studied with an aim to analyze more realistic estimation of device performance in sub-20 nm. Comparison made with junctionless silicon nanowire shows that underlap high-k spacer significantly reduces off-current (≈ 64 mV/decade) and achieves high switching ratio > 109 due to fringing field which tends to increase effective channel length. Variation of different high-k spacer values (k = 3.9, 9.1, 11, 25, and 40) is examined and following static and Analog/RF performance is studied: potential, electric field, band diagram, transconductance, device efficiency, quality factor, capacitances, cutoff frequency (fT), intrinsic delay (τ), TFP, EDP, and GBP. It is observed that for high k = 40 (TiO2), device performance of junctionless SiNW MOSFET improves noticeably in comparison to low-k value. In addition, variation of S/D underlap spacer length (Lsp) along with spacer dielectric has also been done and results reveal that TiO2 with 10 nm spacer length is optimum value for upgraded analog/RF performance. Thus, symmetric S/D underlap junctionless SiNW MOSFET can be considered as a promising component in low-power switching component in RFIC circuits.

Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate

We report on engineering impact ionization characteristics of In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes (InGaAs/AlInAs SL APDs) on InP substrate to design and demonstrate an APD with low k-value. We design InGaAs/AlInAs SL APDs with three different SL periods (4 ML, 6 ML, and 8 ML) to achieve the same composition as Al0.4Ga0.07In0.53As quaternary random alloy (RA). The simulated results of an RA and the three SLs predict that the SLs have lower k-values than the RA because the electrons can readily reach their threshold energy for impact ionization while the holes experience the multiple valence minibands scattering. The shorter period of SL shows the lower k-value. To support the theoretical prediction, the designed 6 ML and 8 ML SLs are experimentally demonstrated. The 8 ML SL shows k-value of 0.22, which is lower than the k-value of the RA. The 6 ML SL exhibits even lower k-value than the 8 ML SL, indicating that the shorter period of the SL, the lower k-value as predicted. This work is a theoretical modeling and experimental demonstration of engineering avalanche characteristics in InGaAs/AlInAs SLs and would assist one to design the SLs with improved performance for various SWIR APD application.

Effects of Bioactive Packaging Films Incorporated with Bifidocin A on Microbial Reduction and Quality Parameters of Chill-Stored Spanish Mackerel (Scomberomorus niphonius) Fillets

To evaluate the potential of bifidocin A for preservation of fresh Spanish mackerel fillets, the bioactive packaging films incorporated with bifidocin A (1 × minimal inhibition concentration (MIC), 2 × MIC and 4 × MIC) were developed, and their effects on the microbiological and physicochemical properties and sensory profile of mackerel fillets at refrigerated storage were investigated. Results showed that the incorporation of bifidocin A in cellulosic matrix films did not affect the thickness and elongation of the films, but reduced slightly the tension strength. The films incorporated with 2 × MIC and 4 × MIC bifidocin A presented a broad spectrum of activity against most tested bacteria, including some fish-borne specific spoilage bacteria such as Pseudomonas fluorescens, Shewanella putrefaciens, Brochothrix thermosphacta, and Micrococcus luteus, and maintained their 100% activity for 28 days during storage at 4°C. The bioactive packaging films incorporated with bifidocin A could generally suppress the growth of microflora, especially Pseudomonas and Enterobacteriaceae, as well as substantially inhibit the accumulation of total volatile basic nitrogen (TVB-N), thiobarbituric acid reactive substances (TBARS) and hypoxanthine, during chilled mackerel fillets storage. Overall, from a microbiological and physicochemical point of view, a much more effective treatment was achieved with 4 × MIC bifidocin A, extending the shelf life to 12 days and maintaining the relatively low TVB-N value (≤13.2 mg/100 g), TBARS value (≤0.45 mg MDA/kg), and K-value (≤32.8%), as well as a relatively high sensory score (≥7.1) during the whole storage. Hence, the bioactive packaging films incorporated with bifidocin A could be a promising hurdle technology and alternative to conventional processes used for improving the safety and quality of chilled mackerel fillets.

Decreasing the dielectric constant and water uptake by introducing hydrophobic cross-linked networks into co-polyimide films

The high durability of low-k value is the key parameter for the low dielectric materials especially used under humid conditions, because the k value is very sensitive to moisture. Here, to decrease the dielectric constant and improve the water resistance, a series of novel co-polyimides are successfully prepared based on cross-linkable diamine monomer by a two-step pathway combining polymerization and crosslinking reaction. It is intriguingly found that with the gradual increase content of cross-linkable group, the dielectric properties, water resistance as well as thermal and mechanical properties of those co-polyimides can be finely tuned. After cross-linking, the dielectric properties are significantly enhanced and the film surface changed from hydrophilic (78.7–89.2°) to hydrophobic (93.0–104.2°), which endow the cross-linked films with superior water resistance and high durability of low-k value. The best performance is obtained for cross-linked co-polyimide (CL-Co-PI-4) containing 30% cross-linkable group. The CL-Co-PI-4 exhibits low dielectric constant of 2.32 and dielectric loss of 0.016 at 1 MHz. Excitingly, the CL-Co-PI-4 demonstrates an extremely low water uptake of 0.051 ± 0.010%, which represents the best water resistance for the reported polyimides. After exposing to different humidity conditions for 12 h, the increasing percentage of k value is very low and below 0.84%. The CL-Co-PI-4 still keep its k value below 2.35 after equilibrating at 75% R.H. for 14 days. The excellent moisture resistance and overall performance make the CL-Co-PI-4 a good candidate for dielectric material under both dry and humid conditions.

Synthesis And Characterization Of Pure-Silica- Zeolite-Beta Membrane

The semiconductor industry needs low dielectric constant (low k-value) materials to more advance microprocessor and chips by reducing the size of the device features. In fabricate this context, a new material with lower k value than conventional silica ( k = 3.9 - 4.2 ) is needed in order to improve the circuit performance. As per the recent International Semiconductor Technology plan, a low-k material with a k = 1.6 will be needed by 2010. The choice of the inorganic zeolite membrane is an attractive option for low k material and suitable for microprocess application. In the present study, a pure silica zeolite beta membrane coated on the non-porous stainless steel support was synthesized using in situ crystallization of a gel with the composition of SiO2 : 0.6 TEAOH : 0.6 HF : 10.1 H2O. The crystallization was carried in the presence of tetraethylammonium hydroxide TEA(OH) as structure directing agent, fumed silica, HF and deionized water at pH value of 9. The crystallization under hydrothermal conditions at 130oC was carried out for the time period of 14 days. The membrane was characterized by X-Ray Diffraction ( XRD ), Thermogravimetric Analysis ( TGA ), Nitrogen Adsorption and Scanning Electron Microscope ( SEM ) . SEM micrographs show highly crystalline, truncated square bipyramidal morphology of pure silica zeolite beta was coated on the non-porous stainless steel support. The membrane dielectric constant, k-value was measured as 2.64 which makes it suitable for the microprocessor applications.

Soluble Perfluorocyclobutyl Aryl Ether-Based Polyimide for High-Performance Dielectric Material.

High durability of low-k value is a desired property for dielectrics serving under humid conditions, because absorbing a small amount of moisture by the material can considerably increase the k value so as to result in function deterioration. Aiming to develop a dielectric polymer with superior durability of low-k value and high thermal stability, a perfluorocyclobutyl (PFCB) biphenyl ether-based polyimide, PFCBBPPI, was synthesized. This polymer possesses a Tg of 310.3 °C and a 5% weight loss temperature of 510.5 °C. PFCBBBPPI exhibited an extremely low water uptake of 0.065 ± 0.018%, representing the best water resistance in polyimides. The increasing percentage in k value was below 2% for PFCBBPPI film exposed to moisture under various humidity conditions for 6 h. PFCBBPPI film equilibrated at 75% R.H. for 2 weeks still kept its k value below 2.50, remarkably outperforming the Kapton film. The remarkable water resistance and resulting high durability of low-k property displayed by PFCBBPPI are originated from the hydrophobic nature and small free volume fraction of the polymer, as confirmed by contact angle test and positron annihilation lifetime spectroscopy results. The outstanding moisture resistance and overall performance of PFCBBPPI make it a suitable candidate for dielectric applications under both dry and humid conditions.

Role of High-k Interlayer in ZrO2/High-k/ZrO2 Insulating Multilayer on Electrical Properties for DRAM Capacitor

For < 25 nm DRAM capacitors, large cell capacitance (20 fF/cell), low leakage current density (J ≤ 1.6×10-7 A/cm2) at the operation voltage (0.6 V), maximum process temperature < 650 oC and conformal films on a three-dimensional structure (pedestal structure) with a large aspect ratio over 30 are required. Recently, the ZrO2/Al2O3/ZrO2 (ZAZ) multilayer was widely used as insulator of DRAM.[1] Al2O3 has advantages of large band gap and amorphous structure, and disadvantage of low k-value. However, it is still not clear how amorphous structure and band gap of interlayer affect to leakage current property. Here, we pay attention to (Ta/Nb)Ox (TN) because of its high k-value (~29), amorphous structure and low band gap (4.3 eV).[2] In this paper, we studied role of various interlayer between ZrO2 layers on leakage current property for DRAM capacitors with TiN electrode. We fabricated four TiN capacitors with ZrO2/ZrO2 (ZZ), ZAZ, ZrO2/(Ta/Nb)Ox/ZrO2 (ZTNZ), and ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 (ZTNAZ) multilayer by atomic layer deposition (ALD) and post-deposition annealing (PDA) processes. The ZrO2, Al2O3, and TN layers were deposited by ALD using (C5H5)Zr[N(CH3)2]3, Al(CH3)3, and (Ta/Nb = 1/1)(NtAm)(NMe2)3 precursor, respectively, and H2O gas. The TNA nano-laminate layers were fabricated by alternately depositing every 1 cycle using TN and Al2O3. After multilayer fabrication, PDA was performed at 600 °C. Finally, TiN top electrode was fabricated by photo-litho. process. Fig. 1 shows relationship between CET and J at 0.6 V for all capacitors. The J values of the ZTNAZ and ZAZ capacitors decrease significantly by 10-7 ~ 10-8 A/cm2 order of magnitude while ZTNZ exhibits large J of ~ 10-5 A/cm2. Moreover, the J value of the ZTNAZ (CET = 1.2 nm) is lower than that of the ZAZ (CET = 1.3 nm). AFM images and RMS roughness of ZZ (CET = 1.1 nm), ZTNZ (CET = 1.2 nm), ZAZ (CET = 1.3 nm), and ZTNAZ (CET = 1.2 nm) are shown in Fig. 2. The RMS roughness of all samples exhibit almost the same value of around 1 nm. Based on these experimental data, we found that the leakage current property of capacitor is influenced by band gap width (conduction band offset of TiN) rather than amorphous structure. We conclude that the TNA is one of candidate material as interlayer for future DRAM. A part of this research is supported by CREST, JST. [1] D. Martin et al., J. Appl. Phys. 113, 194103 (2013). [2] T. Nabatame et al., J. Vac. Sci. Technol. A 33, 01A118 (2015). Figure 1

Organic and organic–inorganic hybrid polymer thin films deposited by PECVD using TEOS and cyclohexene for ULSI interlayer-dielectric application

Organic and organic–inorganic hybrid polymer thin films were deposited on Si(100) substrates at various ratios of TEOS (tetraethoxysilane) to cyclohexene by the plasma enhanced chemical vapor deposition (PECVD) method. The as-grown polymerized thin films were first analyzed by FT-IR and XPS. The results of FT-IR showed that the hybrid polymer thin films were polymerized with each fragmented precursor. The XPS results showed the chemical species and binding energies of each species. The Si 2p core-level spectra from the hybrid polymer thin film showed the status of the Si oxidation number. Impedance analysis was utilized for the measurement of the capacitance values and I–V curves, and an ultra low-k value and leakage current density of 1.75 and 10−9A/cm2 at 1MV/cm were obtained, respectively.

The effect of the pore topology on the elastic modulus of organosilicate glasses

Abstract

Diffusive sampling of 25 volatile organic compounds in indoor air: Uptake rate determination and application in Flemish homes for the elderly

Passive sampling of volatile organic compounds (VOCs) in air has received increasing attention in recent years. However, in order to use passive sampling as a reliable sampling technique a compound and sampler specific uptake rate is needed. Therefore, the scope of our study was threefold. First, uptake rates for 25 VOCs were determined under real indoor and outdoor conditions using axial-sampling tube-type samplers filled with Tenax TA, and active (pumped) sampling as a reference technique. Secondly, the mechanisms of passive sampling were investigated by comparing the experimentally determined uptake rates (0.13–0.46 ml min−1) to the ideal uptake rates, calculated based on Fick’s first law of diffusion and sampler geometry. Sampling efficiency SE, defined as the ratio between the experimental and ideal uptake rate, was introduced as a correction factor and showed that ideal uptake rates may underestimate VOC concentrations by a factor up to 4. This compound dependent SE is explained in terms of the partitioning coefficient K, i.e. the compound’s Tenax TA to air concentration equilibrium ratio. Compounds with a low K-value showed the most pronounced non-ideal sorptive behavior. Third, the experimentally determined uptake rates were used to determine VOC concentrations (between 12 and 311 μg m−3) in 6 homes for the elderly in Antwerp (Belgium). This study provides unique data for indoor air quality at care centers in Flanders.

Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies

A cost effective 28nm CMOS Interconnect technology is presented for 28nm node high performance and low power applications. Full entitlement of ultra low-k (ULK) inter-level dielectric is enabled. Copper wiring levels can be combined up to a total of 11 levels. The inter-level dielectric was optimized for low k-value and high strength. The feature profiles were optimized to enable defect-free metallization using conventional tools and processes. High yields and robust reliability were demonstrated.

Clustering gene expression data with a penalized graph-based metric

BackgroundThe search for cluster structure in microarray datasets is a base problem for the so-called "-omic sciences". A difficult problem in clustering is how to handle data with a manifold structure, i.e. data that is not shaped in the form of compact clouds of points, forming arbitrary shapes or paths embedded in a high-dimensional space, as could be the case of some gene expression datasets.ResultsIn this work we introduce the Penalized k-Nearest-Neighbor-Graph (PKNNG) based metric, a new tool for evaluating distances in such cases. The new metric can be used in combination with most clustering algorithms. The PKNNG metric is based on a two-step procedure: first it constructs the k-Nearest-Neighbor-Graph of the dataset of interest using a low k-value and then it adds edges with a highly penalized weight for connecting the subgraphs produced by the first step. We discuss several possible schemes for connecting the different sub-graphs as well as penalization functions. We show clustering results on several public gene expression datasets and simulated artificial problems to evaluate the behavior of the new metric.ConclusionsIn all cases the PKNNG metric shows promising clustering results. The use of the PKNNG metric can improve the performance of commonly used pairwise-distance based clustering methods, to the level of more advanced algorithms. A great advantage of the new procedure is that researchers do not need to learn a new method, they can simply compute distances with the PKNNG metric and then, for example, use hierarchical clustering to produce an accurate and highly interpretable dendrogram of their high-dimensional data.

Novel Low-$k$ Dielectric Buried-Layer High-Voltage LDMOS on Partial SOI

A high-voltage lateral double diffused metal-oxide-semiconductor transistor on partial silicon on insulator (PSOI) with a buried low- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">k</i> dielectric (LK PSOI) is proposed. The low- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">k</i> value enhances the electric field strength in the dielectric ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">EI</i> ). The Si window not only makes the substrate share the breakdown voltage (BV) and modulates the field distribution in the SOI layer but also alleviates the self-heating effect. Compared with those of the conventional PSOI, the <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">EI</i> and BV of LK PSOI with <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">kI</i> = 2 are enhanced by 74% and 19%, respectively.

In Situ Crystallized Zirconium Phenylphosphonate Films with Crystals Vertically to the Substrate and Their Hydrophobic, Dielectric, and Anticorrosion Properties

The in situ crystallization technique has been utilized to fabricate zirconium phenylphosphonate (ZrPP) films with their hexagonal crystallite perpendicular to the copper substrate. The micro/nano roughness surface structure, as well as the intrinsic hydrophobic characteristic of the surface functional groups, affords ZrPP films excellent hydrophobicity with water contact angle (CA) ranging from 134 degrees to 151 degrees , without any low-surface-energy modification. Particularly, in the corrosive solutions such as acidic or basic solutions over a wide pH from 2 to 12, no obvious fluctuation in CA was observed for all the ZrPP film. The k values of the hydrophobic ZrPP films are in the low-k range (k < 3.0), meeting the development of ultra-large-scale integration (ULSI) circuits. The hydrophobicity feature is proposed to bear ZrPP film a more stable low-k value in an ambient atmosphere. Besides, the polarization current of ZrPP films is reduced by 2 orders of magnitude, compared to that of the untreated copper substrate. Even deposited in a vacuum oven for 30 days at room temperature, ZrPP films also show excellent corrosion resistance, indicating a stable anticorrosion property.

Dielectric properties of bis(2,4 pentanedionato)copper(II) crystalline films grown on Si substrate for low-k applications

Bis(acetylacetonato)copper(II) thin films were prepared by sublimation at about 245 C in vacuum on pSi and glass substrates for dielectric and optical investigations. They were characterized by the X-ray diffraction (XRD) and energy-dispersion X-ray fluorescence (EDXRF) methods. The XRD pattern reveals that the prepared films were polycrystalline of monoclinic P21/n structure. The optical absorption spectrum of the prepared film was not identical to that of the molecular one, which identified by a strong absorption peak at 635 nm. The onset energy of the optical absorption of the complex was calculated by using Hamberg et al. method, which is usually used for common solid-state semiconductors and insulators. The dielectric properties for the complex as insulator were investigated on samples made in form of a metal-insulator-semiconductor (MIS) structure. The dielectric properties were studied in frequency range 1–1000 kHz and temperature range 298–333 K. The dielectric relaxation was analyzed in-terms of dielectric modulus M * (x). Generally, the present study shows that films of the complex grown on Si substrate are a promising candidate for low-k dielectric applications; it displays low-k value around 1.7 ± 0.1 at high frequencies.

SiOCH 박막의 열처리에 따른 전기적인 특성

The SiOCH films that low dielectric interlayer dielectric materials were deposited on p-type Si(100) substrates through the dissociation of BTMSM precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm <TEX>$O_2$</TEX>. SiOCH thin films were annealed at <TEX>$450^{\circ}C$</TEX> for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed even greater reductions of the maximum capacitance and the dielectric constant of the SiOCH samples, owing to reductions of surface charge density. we confirmed this result with derivative of C-V characteristic, leakage current density. The maximum capacitance and leakage current density were respectively decreased about 4 pF, 60% after annealing. The average of low-k value is approximatly 2.07 after annealing.