Low-fluence Irradiation Research Articles

Effect of irradiation temperature on the mobility of structural and vacancy defects in the damaged layer of Li2ZrO3 ceramics

The paper presents the assessment results of the irradiation temperature effect on the change in the type of structural defects caused by irradiation with helium ions in the near-surface layer of Li2ZrO3 ceramics, as well as determining the nature of structural damage using the electron paramagnetic resonance method in the case of irradiation fluence variation. During characterization of the structural changes caused by helium ion irradiation, the main attention was paid to detailing the type of structural defects and radiolysis products arising during irradiation, alongside alterations in their concentration using the electron paramagnetic resonance method. During the experiments, it was determined that the observed effects of thermally stimulated mobility of vacancy defects in the damaged layer caused by irradiation with helium ions indicate a positive effect of thermal heating of samples during irradiation at low fluences. This effect consists in a decline in the number of oxygen vacancies in the damaged layer at low irradiation fluences (1015 – 1016 cm-2), the concentration of which was determined using the EPR method, and the observed structural changes at low irradiation fluences in the case of an elevation in irradiation temperatures are associated with deformation distortion of the crystalline structure of ceramics caused by transformation energy processes, and thermal expansion effects.

The connection between the accumulation of structural defects caused by proton irradiation and the destruction of the near-surface layer of Li4SiO4 – Li2TiO3 ceramics

The key problem of using lithium-containing ceramics as materials of breeders for the propagation of tritium in thermonuclear reactors is phase stability, as well as the preservation of strength and thermophysical parameters of ceramics during their operation, which is accompanied by the accumulation of fission products in the near-surface layers, alongside mechanical influences from the outside. Moreover, in contrast to other types of ceramics, the presence of lithium in the composition of the samples under study leads to limitations in the use of classical analysis methods (scanning electron microscopy, energy dispersive analysis or optical spectroscopy) of structural changes caused by the accumulation of radiation damage, which requires the use of more complex methods for the assessment of the defect concentration in the structure, as well as establishing their relationship with the deterioration of strength and thermophysical parameters, playing a key role in determining the stability mechanisms and further exploitation of ceramics for tritium production. In this regard, the aim of the study is to determine the kinetics of changes in the near-surface layer of two-phase Li4SiO4 – Li2TiO3 ceramics associated with the accumulation of structural distortions caused by irradiation, as well as their relationship with strain embrittlement and disorder. During the studies, it was found that the accumulation of implanted hydrogen in the near-surface layer under high-dose irradiation initiates deformation distortion processes, the intensity of which depends on the ratio of components in the ceramics, according to which the optimal compositions of two-phase ceramics are ratios of components from 0.3 to 0.6. Determination of the type of defects in the composition of the damaged layer, as well as their concentration, was carried out using the electron spin resonance (ESP) method. During the studies, it was found that at low irradiation fluences, the dominant role in the accumulation of structural defects is played by vacancy defects associated with E′-centers, the formation of which is associated with structural distortions, while as the fluence grows, the structure is dominated by deformation disordering caused by the accumulation of Ti3+ defects and HC2 centers (SiO43-), the concentrations of which have a clear dependence on the phase composition of the ceramics.

Optical and structural transformations in polyethylene terephthalate (PET) films subjected to Ag[formula omitted]-ion implantation and subsequent Au[formula omitted]-ion irradiation

We report on the dual effects of ion implantation and swift heavy ion on the optical and structural characteristics of polyethylene terephthalate (PET) films using UV–Vis spectrophotometry, FTIR and X-ray diffraction measurements. Samples were first implanted with 150 keV Ag+-ions at different fluences of 1 ×1016, 5 ×1016, and 1 ×1017 ions/cm2, and thereafter irradiated with 30 MeV Au7+-ions at different fluences, while analysing elemental depth profile in situ on the Time of Flight Heavy Ions Elastic Recoil Detection (ToF-Hi-ERDA) instrument. The elemental depth profile measurements showed considerable atomic depletion of hydrogen from 36% down to below 6% and oxygen from 18% to about 5%. The proportion of carbon increased from 45% to over 87%. The optical bandgap decreased with increasing ion implantation fluence and reduced even further on irradiation with 30 MeV 197Au7+-ions. The most notable outcome of the implantation was the onset of the precipitation of gold nanoparticles (Au-NPs) in the PET matrix, marked by Localised Surface Plasmon Resonance effects, coincided with a relatively significant drop in the bandgap energy. This latter effect could only be best explained as the result of these Au-NPs in the PET. This suggests that optical bandgap tuning in polymer films, usually achievable through high fluence implantation at low energy (i.e., keV), could also be realized through low fluence irradiation with MeV energy ions. It is surmised that, for the noble metals, NP-induced bandgap modification in PET precludes the need for high fluence to achieve the same. This has the obvious advantage of bandgap alterations at much lower structural damage to the target polymer. As reported by FTIR results, one can observe structural changes with the formation of new chemical bonds on thin films. X-ray diffraction results exhibited one prominent peak corresponding to the (100) plane, which varies in intensity with increased implantation fluence, suggesting a change in the crystallinity of the PET. The decrease in (100) peak or crystallinity was well connected with the presence and decrease of 847, 970, and 1471 cm−1 peaks, which were assigned to the ethylene glycol molecular groups.

Impact of radiation damage on the photoconductor and photodiode properties of GaN core–shell p–n junction microwires

GaN nano- and microwires have gained increasing interest due to their unique geometry and flexibility, and have already been successfully applied in optoelectronics. One important advantage is their superior crystalline quality in comparison to their thin-film counterparts. Beside this, GaN is also known for its high radiation hardness, owed to the large displacement energy of the atoms in its crystal lattice and efficient dynamic annealing properties. In this work, single GaN core–shell p–n junction microwires have been processed into radiation detectors and the induced damage effects on the electrical and optoelectrical characteristics, when irradiating the detectors with 1 and 2 MeV protons, have been studied. By measuring the dark and photocurrent as a function of the irradiation fluence we show that for fluences up to 1×1014 protons/cm2 there is no significant modification of any of the parameters and that serious degradation only occurs for fluences above 1×1015 protons/cm2. Furthermore, we also observe that the dark current decays at a lower irradiation fluence with respect to the photocurrent due to the different impact of the created irradiation defects on the properties of the neutral region and the p–n junction. As a consequence, the signal-to-noise ratio of the detector is strongly enhanced, especially when applying a higher reverse bias. Thermal treatments furthermore show that the degree of recovery of the properties of the detectors is strongly dependent on the irradiation fluence. The detector irradiated with a fluence of 5×1014 protons/cm2 almost completely retrieved its pre-irradiation characteristics whereas the detector irradiated with 5×1015 protons/cm2 only showed a minimal recovery.

A simulation study of irradiation effect on InAs/GaAsSb type II quantum dot structures

Particles in space cause irradiation damage to the solar cells (SCs), resulting in the degradation of their performance. Quantum dot solar cells (QDSCs) have higher theoretical efficiency and better irradiation resistance than the conventional GaAs SCs, which makes them highly promising for application in space. In this paper, we study the proton irradiation effect on InAs/GaAs0.8Sb0.2 QDSCs by SRIM program. The simulation result shows that the InAs/GaAs0.8Sb0.2 QDSCs have fewer vacancies than GaAs SCs when irradiated with low-energy proton, which indicates that the InAs/GaAs0.8Sb0.2 QDSCs have better anti-irradiation characteristics. The study about displacements per atom and proton concentration in two SCs shows that protons with low energy and high irradiation fluences will cause more serious damage in InAs/GaAs0.8Sb0.2 QDSCs. In addition, the proton incident angle affects the vacancy distribution, while the number of QD layers has little effect on it.

Study of the photoluminescence properties of GaN irradiated with low fluence Ta ions

The irradiation influences the properties of GaN. We studied the irradiation of n-type, p-type, and i-type GaN with 2.896 GeV Ta ions, with experimental irradiation fluence of 3 × 108, 3 × 109, and 2 × 1010 cm−2, respectively. Low fluence ion irradiation of GaN enhances the luminescence performance of the samples and releases stress between GaN and the sapphire substrate. We demonstrate by characterizing GaN that this is due to the displacement of Ga or N atoms repairing the defects caused by the entry of irradiated ions, thus enhancing the performance of GaN. This provides a reference for low fluence irradiation of GaN.

Swift heavy ion irradiation-driven energy band engineering and its profound influence on the photoresponse of β-Ga2O3 ultraviolet photodetectors

Swift heavy Ta ions with an ultra-high energy of 2896 MeV are utilized for irradiation of β-Ga2O3 photodetectors. Noteworthy variations in device performance under different wavelengths are observed. Under 254 nm light illumination, the photocurrent of the devices exhibit degradation at low ion fluences but gradually recover and even surpass the performance of non-irradiated devices at the irradiation fluence of 1 × 1010 cm−2. Conversely, under 365 nm light illumination, photocurrent increases at low fluence but slightly decreases at the same high fluence of 1 × 1010 cm−2. Cathodoluminescence spectra and first-principles calculations elucidate the mechanism underlying the evolution of device performance with irradiation fluence. At low irradiation fluence, the introduction of point defects such as oxygen vacancies and gallium vacancies leads to an expansion of the bandgap, resulting in a decline in photocurrent under 254 nm light illumination. Additionally, deep defect levels are generated by these point defects, promoting an enhancement of photocurrent under 365 nm light illumination. Higher fluences transform these point defects into complex defects such as Ga–O pair vacancies, resulting in a reduction in the bandgap. Consequently, an increase in photocurrent is observed for devices illuminated with 254 nm light. However, at high irradiation fluences, charge recombination induced by the presence of deep defect levels becomes more significant, leading to a decrease in photocurrent when exposed to 365 nm light. No matter what, at 1 × 1010 cm−2 fluence, β-Ga2O3 photodetectors still maintain excellent performance, implying their strong radiation resistance and immense potential for application in space environments.

Different mechanisms of A-site and B-site high entropy effect on radiation tolerance of pyrochlores

The properties of high entropy pyrochlore have been studied extensively, but there is no consistent conclusion on its radiation tolerance. Besides, the mechanism of the high entropy effect on the radiation tolerance of pyrochlore is still unclear. In this work, combined with experiments and calculations of pyrochlores with similar cationic radius ratios, the A-site and B-site high entropy effects on structural evolution under irradiation are analyzed. In situ irradiation experiments were carried out on A-site high entropy pyrochlores such as (La0.2Nd0.2Sm0.2Gd0.2Er0.2)2Zr2O7, B-site Gd2(Ti1/3Sn1/3Zr1/3)2O7, and ternary pyrochlore Sm2Zr2O7 and Gd2Sn2O7 for comparison. The A-site high entropy pyrochlore can maintain a stable structure under high fluence irradiation like corresponding ternary pyrochlore, demonstrated by high angle annular dark field scanning transmission electron microscopy (HAADF-STEM), energy dispersive spectroscopy (EDS) mapping and Raman spectrum. The additional irradiation experiments on A-site high entropy pyrochlores (La1/3Nd1/3Gd1/3)2Zr2O7 and (Nd1/3Sm1/3Gd1/3)2Zr2O7 also confirm the similarity under irradiation between A-site high entropy and ternary pyrochlores. However, the B-site high entropy pyrochlore Gd2(Ti1/3Sn1/3Zr1/3)2O7 becomes amorphous at exceptionally low irradiation fluences, indicating a significantly distinct radiation tolerance compared with the A-site high entropy. The difference between the A-site and B-site high entropy effect is analyzed from cationic lattice distortion, bond strength, and inner electron binding energy by first-principles calculations. The results reveal the role and mechanism of the high entropy effect in pyrochlores and lay a foundation for material design and future applications.

Study of the Relationship between Changes in the Structural, Optical, and Strength Properties of AlN Ceramics Subjected to Irradiation with Heavy Xe23+ Ions.

The purpose of this study is to comprehensively analyze the influence of different fluences of irradiation with Xe23+ heavy ions on alterations in the structural, optical, and strength properties of AlN ceramics and to establish a connection between structural distortions and alterations in the optical and mechanical properties of the ceramics. X-ray diffraction, UV-Vis and Raman spectroscopy, and indentation and single-compression methods were used as research methods. During the study, it was demonstrated that at low irradiation fluences, the main role in the changes in the properties of the AlN ceramics is played by effects related to changes in their optical properties and a fundamental absorption edge shift, which characterizes changes in the electronic properties of the ceramics (changes in the distribution of electron density). A study of the variations in the optical properties of the examined samples in relation to the irradiation fluence showed that when the fluence surpasses 5 × 1011 ion/cm2, an extra-spectral absorption band emerges within the range of 3.38-3.40 eV. This band is distinctive for the creation of vacancy ON-VAl complexes within the damaged layer's structure. The presence of these complexes signifies structural deformations and the accumulation of defective inclusions within the damaged layer. An analysis of changes in the parameters of the crystal lattice showed that structural distortions in the damaged layer are due to the accumulation of tensile residual mechanical stresses, an increase in the concentration of which leads to the swelling and destruction of the damaged layer. Some correlations between the mechanical properties of ceramics and the irradiation fluence indicate the ceramics' remarkable resistance to radiation-induced brittleness and weakening. These effects become apparent only when structural damage accumulates, resulting in the swelling of the crystal lattice exceeding 2.5-3%.

Exceptional structural and functional stability of Zr-doped REBaCuO tapes with respect to neutron irradiation and overheating

The impact of neutron irradiation on the properties of second-generation REBaCuO tapes was studied. The main aim of the present study was to identify the fast neutrons irradiation fluence threshold, φ th, at which the high-field critical current at low temperatures, I c (10 K, 8 T), starts degrading. Following up on our previous publication for low irradiation fluences, two new irradiation steps were added. Up to the last but one irradiation step, the T c in all samples followed a linear dependence on the fast neutrons irradiation fluence, T c(φ) ≈ T c(0) − τφ (τ being a numerical constant in units of K/1022 m−2 and φ in 1022 m−2). In parallel, I c (10 K, 8 T) continuously grew with φ up to the threshold fluence, φ th ≈ 3× to 4.3 × 1022 m−2. The last gradual irradiation by φ≈ 1.83 × 1022 m−2 brought a severe degradation both in T c and I c (10 K, 8 T) in most samples, irrespective of their irradiation history. This effect was attributed to radiation overheating. Annealing of pristine tapes in dilute Ar confirmed this scenario. Two of the SuperPower tapes, doped by Zr, appeared to be exceptionally stable against both types of overheating. The tape doped with 7.5% Zr, T c(φ) followed the linear dependence up to the highest cumulative fluence φ =6.16 × 1022 m−2, while the I c (10 K, 8 T) drop was several orders of magnitude lower than in the samples without Zr. TEM study found that the Zr-doped tapes survived the overheating during the last irradiation step in a crystalline form, while all other samples were amorphized.

Some Initial Results on Modification of aC:H Films by Pulsed Laser Irradiation

It has recently been shown both theoretically and experimentally that a significant modification of the aC:H films is possible using UV irradiation even with a very low irradiation fluence. Some initial results on the modification of aC:H films with thickness of about 40 nm with UV laser irradiation are presented here. The fourth harmonic (λ = 266 nm) of a Nd:YAG laser system (the fundamental wavelength λ = 1064 nm) was used in our experiments. The modified areas of the aC:H films were characterized by optical microscopy, Raman spectroscopy as well as by atomic force microscopy (AFM). A significant modification of aC:H films under certain conditions (laser irradiation fluence and modification modes) to multi-layer graphene accompanied by ablation of a part of the film was established. It was also found that similar aC:H films deposited on 330 nm SiO2/Si substrates did not undergo significant modification under these conditions.

Study of the influence of radiation-induced damage accumulation during the interaction of heavy Xe22+ ions on changes in the thermophysical parameters of zirconia ceramics

The aim of this paper is to evaluate the influence of the processes of radiation-induced damage formation in the form of point defects, dislocations and vacancies, as well as their accumulation and the formation of locally disorderedregions in the near-surface layer of zirconia ceramics under irradiation with heavy Xe22+ions with an energy of 230 MeV, on the change in the thermophysical properties of ceramics. The choice of the ion type for irradiation is due to the possibilities ofmodeling radiation damage processes comparable to the impact of uranium nuclei fission fragments during nuclear reactions in nuclear fuel. The choice of materials for irradiation in the form of ZrO2ceramics is due to the prospects for their use as the main material for inert matrices of dispersed nuclear fuel for new generation reactors. This choice is due to the physicochemical, thermophysical and strength properties of ZrO2ceramics, which are more resistant than other types of oxide ceramics. During research, it was found that the formation of isolated locally heterogeneous regions at low irradiation fluences does not lead to significant changes in the thermophysical properties of the damaged ceramic layer. However, polymorphic transformations of the t-ZrO2 → c-ZrO2type, which occur at irradiation fluences above 1012ion/cm2, lead to a decrease in thermal conductivity and the appearance of heat losses associated with the disruption of the phonon heat transfer mechanisms in the damaged layer.

Study of Polymorphic Transformation Processes and Their Influence in Polycrystalline ZrO2 Ceramics upon Irradiation with Heavy Ions

The aim of this work was to study the mechanisms of polymorphic transformations in ZrO2 ceramics under irradiation with heavy ions, as well as to determine the nature of structural distortions in the case of t-ZrO2 → c-ZrO2 type transformations and associated anisotropic deformations. The samples of ZrO2 ceramics were irradiated with Kr15+ heavy ions with an energy of 150 MeV and fluences of 1011–1016 ion/cm2. During evaluation of the structural changes depending on the irradiation fluence, it was found that at low irradiation fluences (1011–1012 ion/cm2), the main role is played by deformation distortions of the crystal lattice, which have a pronounced anisotropic character. Meanwhile, at fluences above 1013 ion/cm2, the main role is played by polymorphic transformations of the t-ZrO2 → c-ZrO2 type, followed by amorphization of the damaged layer at fluences above 1015 ion/cm2. It was established that the anisotropic distortion of the crystal lattice is more pronounced along the crystallographic a axis, as well as the (011) texture orientation, which is characteristic of t-ZrO2. The polymorphic transformation processes of the t-ZrO2 → c-ZrO2 type occur at irradiation fluences of 1013–1014 ions/cm2, which are characterized by the formation of an overlap of local areas of defects that appear along the trajectory of ions in the material. The dependences of changes in the strength and thermophysical properties of ZrO2 ceramics on the irradiation fluence were obtained. The mechanisms of influence of the structural disorder and polymorphic transformations on the decrease in strength and crack resistance were established.

Static Hydrophobic Cuprous Oxide Surface Fabricated via One-Step Laser-Induced Oxidation of a Copper Substrate.

In this study, we developed a one-step method for fabricating hydrophobic surfaces on copper (Cu) substrates. Cuprous oxide (Cu2O) with low free energy was successfully formed after low-fluence laser direct irradiation. The formation of Cu2O enhanced the hydrophobicity of the Cu substrate surface, and the contact angle linearly increased with the proportion of Cu2O. The Cu2O fabricated by low-fluence laser treatment showed the same crystal plane orientation as the pristine Cu substrate, implying an epitaxial growth of Cu2O on a Cu substrate.

Evolution of helium bubbles induced by helium irradiation in polycrystalline palladium: An insight into tritium aging

Essential insight into evolution principles of helium (He) bubbles within Palladium (Pd), a prominent hydrogen isotope storage and tritium handling material, is of great importance to understand the service performance of such transition metal in the field of nuclear industry. Particularly, the features of He bubbles and their evolution details have long been attracting broad interests. Herein, He bubbles with different structural features and corresponding distinct evolving processes within polycrystalline Pd were investigated by transmission electron microscopy (TEM), elastic recoil detection (ERD) and thermal desorption spectroscopy (TDS). He bubbles were induced and regulated by irradiation conditions. Comprehensive characterizing results indicate that bubbles with small sizes, spherical shape and uniform distribution, realized by low-fluence irradiation, are inclined to be stable in Pd matrix, while coarsened bubbles with faceted shape and regional distribution in the high-fluence condition are prone to release at relatively low temperatures. Meanwhile the evolving processes of He bubbles including migration, coarsening and releasing within polycrystalline Pd were analyzed. The impact of the structural characteristics such as surfaces or grain boundaries of Pd, acted as “fast path” for bubble diffusion, coarsening and release, was systematically discussed. Moreover, the correlation between tuned irradiation and actual tritium aging was discussed by analyzing He concentrations and bubble sizes in both processes. The study reveals important features of He bubble evolution in Pd, which will provide positive reference for understanding correlative behaviors in other irradiation conditions, especially tritium aging. • He bubbles with different features were obtained by tuning fluence and energy of He + irradiation. • Evolution behaviors of He bubbles including nucleation, migration and coarsening were studied by TEM, ERD and TDS. • The stability of He bubble is closely related to the size that small one inclines to stabilize while large one tends to release. • Trapping and coarsening of He bubbles are promoted in grain boundaries and structural defects. • Different evolution periods of He bubble in this study were analyzed for the purpose to offering an analogous reference for tritium aging.

Microscopic origin of the acceptor removal in neutron-irradiated Si detectors - An atomistic simulation study

The improved radiation hardness of p-type Si detectors is hindered by the radiation-induced acceptor removal process, which is not fully understood yet. Through atomistic modeling of displacement damage and dopant interactions, we analyze the acceptor removal under neutron irradiation, providing physical insight into its microscopic origin. Our results show that the fast decay of the effective dopant concentration (Neff) at low irradiation fluences is due to B deactivation caused by Si self-interstitials. The intriguing increase of the acceptor removal parameter with the initial dopant concentration (Neff,0) is explained by the limited number of mobile Si self-interstitials that survive annihilation and clustering processes. The sublinear dependence of the removal parameter on Neff,0 is associated to the inhomogeneity of damage for low Neff,0 and the formation of B-interstitial clusters with several B atoms for high Neff,0. The presence of O and C modifies B deactivation mechanisms due to the key role of BiO defects and the trapping of vacancies and Si self-interstitials, but for the impurity concentrations analyzed in this work ([O] >> [C]) it has little effect on the overall amount of removed acceptors. At high irradiation fluences, the reported increase of Neff is attributed to the formation of defect-related deep acceptors. From the analysis of the defect concentrations resulting from neutron irradiation and the occupancy of small clusters with acceptor levels reported in literature, we point out the tetra-vacancy cluster as one of the main contributors to Neff with negative space charge.

Study of SGEMP Field-Coupling Inside and Outside Reentrant Cavity

This article studies system-generated electromagnetic pulse (EMP) and coupling in a reentrant cavity—a simplified spacecraft model with the annular slit and internal shaft, numerically by using the three-dimensional conformal particle-in-cell method. The results indicate that when the electromagnetic fields arrive at the annular slit, obvious field-coupling will be induced that EMP may enter or escape from the slit without many restrictions at the low-irradiation fluence. In this case, the total field can be acquired by linearly summing the EMPs derived from the moving electrons released separately by the external and internal emitting surfaces. The reentrant cavity is to form a repetitive-oscillating capacitor model, while the electromagnetic waves of damped oscillation with comparatively large amplitude are found near the annular slit and the internal shaft. The frequency of the damped oscillation is mainly influenced by the cavity geometrical factor and is going to converge to the natural frequency of the reentrant cavity. Furthermore, the reason accounting for the change of both the frequencies is revealed.

Interaction of low-fluence femtosecond laser pulses with a composite layer containing Ge nanoclusters: A novel type of nanofoam formation

In the present work, the low-fluence nonablating femtosecond laser irradiation (λ = 800 nm) of the GeO2 layer with Ge nanoclusters protected by SiO2 layers is studied by different types of microscopy (optical microscopy, atomic force microscopy, and scanning and transmittance electron microscopy) and Raman spectroscopy. After the laser modification, the multilayer thickness increased by 6%–29% depending on the laser fluence. It was found that the laser fluence of ∼40 mJ/cm2 was the optimal value for observing the swelling effect and was below the ablation threshold. Irradiation at this fluence led the Ge nanoclusters to decrease in size from 5–8 to ∼2 nm and crystallize, while the GeO2 matrix expanded due to the formation of GeO bubbles. The fabrication mechanism of the novel type of nanofoam consisting of a glassy matrix, cavities filled with gas, and semiconductor nanocrystals with reduced size dispersion is discussed. Presumably, this effect is associated with the selective absorption of IR (800 nm) laser radiation by Ge nanoclusters.

Experimental and modeling study of controllable laser lift-off via low-fluence multiscanning of polyimide-substrate interface

Fabricating large-area thin-film flexible electronics rely on the peeling process from rigid prefabricated carriers. The well-established laser lift-off (LLO) employs a shaped excimer laser to scan the interfacial polyimide (PI) for peeling. However, using the traditional LLO (high-fluence single scanning), nondestructive peeling of ultra-thin fragile devices remains challenging. Here, an enhanced LLO strategy based on multiple low-fluence irradiations with an excimer laser (m-LLO) is studied to perform noninvasive and controllable peeling. We first construct a model predicting the core parameter of the peeling effect, the amount of gas accumulated at the interface generated by multiple backside irradiations. The specific influence of gas on the peeling effect is obtained through the accurate assessment of the interface bonding state by profile analysis, micro-observations, and strain sensing. We establish a deterministic peeling method by providing the peeling index that can precisely evaluate the interface bonding state under different process parameters, showing advantages over traditional LLO. The characterizations of chemical modifications after peeling further confirmed a different process mechanism of m-LLO. These results would be helpful to develop a non-destructive and controllable LLO process for the mass production of the next generation of flexible electronics.

Strengthening of tungsten by coherent rhenium precipitates formed during low fluence irradiation

Strengthening of tungsten by coherent rhenium precipitates formed during low fluence irradiation